Patents Represented by Attorney, Agent or Law Firm George L. Craig
  • Patent number: 4810667
    Abstract: The disclosure relates to a method of forming an isolated semiconductor, preferably of the vertical bipolar variety, wherein a porous highly doped semiconductor layer is oxidized and, with a trench containing silicon oxide therein, forms a region encasing a moderately doped epitaxial layer disposed beneath a lightly doped epitaxial layer. The vertical bipolar device is formed in the moderately doped and lightly doped layers with the highly doped epitaxially deposited layer, which is now a silicon oxide layer, forming a portion of the isolation. The anodization of the highly doped layer takes place using an anodizing acid at a temperature of from about 0 to about 10 degrees C.
    Type: Grant
    Filed: April 28, 1987
    Date of Patent: March 7, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Eldon J. Zorinsky, David B. Spratt, Richard L. Yeakley
  • Patent number: 4796229
    Abstract: A writable logic array includes a first matrix (12,38) of gate elements. Program lines (16) connect the first array (12,38) with a second matrix (18,40) of gate elements. A plurality of switches (22), one for each program line (16), selectively couple or decouple the program lines (16) to the second matrix (18,40). Switches (22) are in turn controlled by a volatile memory (32), into which instructions may be written at the time the system into which the array is incorporated is booted up.
    Type: Grant
    Filed: July 8, 1986
    Date of Patent: January 3, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: W. T. Greer, Jr., Frank L. Laczko
  • Patent number: 4792706
    Abstract: The disclosure relates to a logic circuit wherein the voltage regulators of the ECL circuits, which use resistor ratios, the values of which are difficult to control in the formation of semiconductor circuits, are replaced by a series of diodes, the areas of which are very easy to control in semiconductor fabrication, to set the threshold voltages for the transistors. Diode voltage ratios are very controllable since the diodes change only about 18 millivolts for every factor of two in current change. Thresholds can therefore easily be set in five and ten millivolt increments, this being the procedure utilized herein. Embodiments are disclosed using the basic circuit in a stacked configuration to provide AND/NAND operation in addition to the OR/NOR operation of the basic embodiment.
    Type: Grant
    Filed: December 16, 1986
    Date of Patent: December 20, 1988
    Assignee: Texas Instruments Incorporated
    Inventors: Kevin M. Ovens, Bobby D. Strong
  • Patent number: 4779124
    Abstract: A virtual phase, buried channel CCD with the usual metal gate/oxide structure replaced by a reverse biased junction (possibly a heterojunction) or Schottky barrier is disclosed. Such gate substitution for a standard three phase or multiphase CCD and other devices compatibly fabricated with such gate are also disclosed.
    Type: Grant
    Filed: January 22, 1987
    Date of Patent: October 18, 1988
    Assignee: Texas Instruments Incorporated
    Inventor: Jaroslav Hynecek
  • Patent number: 4742381
    Abstract: A semiconductor charge-coupled device is fabricated with use of a layer of a doped semiconductor having an insulator layer thereon. Suitable dopant ions such as nitrogen or argon ions are implanted into the doped semiconductor layer so that the projected range of the ions introduced into the semiconductor layer is located substantially at the interface between the doped semiconductor layer and the insulator layer for forming an interlevel layer providing an increased surface state at the aforesaid interface. Where the interlevel layer is formed by implantation of nitrogen ions the structure having the nitrogen ions implanted into the doped semiconductor layer is preferably annealed at a relatively high temperature. The charge-coupled device may be designed either as the surface-channel type or as the buried-channel type with a single-phase, two-phase, three-phase or four-phase driving scheme.
    Type: Grant
    Filed: May 15, 1986
    Date of Patent: May 3, 1988
    Assignee: Texas Instruments Incorporated
    Inventor: Ichiro Fujii
  • Patent number: 4498329
    Abstract: A sphere with a hole through one diameter is held in a spherical chamber hin a tube. The axis of the tube and the hole through the sphere are out of alignment by some predetermined angle, .theta.. The sphere is held within the chamber and the entire unit is caused to spin. The sphere is released while the unit is still spinning. The gyroscopic nutation of the sphere causes the spherical bore to traverse the angle .theta. and align with the tubular bore in a time dependent upon the sliding friction between the material of the sphere and the material of the spherical chamber.
    Type: Grant
    Filed: May 20, 1983
    Date of Patent: February 12, 1985
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: James W. Bloomer, II, Robert H. Nunn
  • Patent number: 4447811
    Abstract: An H-plane sectoral horn antenna is loaded with low-loss dielectric inserts n alternative embodiments so as to reduce beamwidth, increase axial gain and to achieve non-mechanical beam scanning. In one embodiment, the antenna is transversely loaded with a multi-layer dielectric array containing an air gap of critical thickness between four dielectric strips. In another embodiment, the antenna is longitudinally and symmetrically loaded with wedge-shaped dielectric strips separated by a critical air gap between the dielectric and antenna walls.
    Type: Grant
    Filed: October 26, 1981
    Date of Patent: May 8, 1984
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Michael Hamid
  • Patent number: 4438513
    Abstract: A method and apparatus for constructing a continuous wave (CW) free elect laser (FEL) system capable of providing tunable high power laser radiation at short wavelengths using low-energy recirculating DC electron beams. This method replaces the static periodic magnetic field used in conventional FEL systems with an equivalently intense and continuous electromagnetic pump field having spatial periodicity less than 1 cm. The pump field is generated by a low-energy recirculated DC electron beam interacting with a transverse static periodic magnetic field.
    Type: Grant
    Filed: January 26, 1981
    Date of Patent: March 20, 1984
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Luis R. Elias, John M. J. Madey, Todd I. Smith
  • Patent number: 4425649
    Abstract: An apparatus and method is described for greatly enhancing the power output f a free electron laser. To enhance the electron kinetic energy that is converted to laser radiation, the wave amplification resonance condition is continuously changed along the length of the laser interaction region. The changing resonance condition is achieved by use of a static magnetic field transverse to the injected electron beam, the magnetic field having a longitudinal magnetic field gradient.
    Type: Grant
    Filed: January 26, 1981
    Date of Patent: January 10, 1984
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Luis R. Elias, John M. J. Madey, Todd I. Smith
  • Patent number: 4417313
    Abstract: A method for optimizing the design of finite noise barriers by using an extension of the Biot-Tolstoy rigorous closed form impulse solution for diffraction of an acoustic pressure pulse by an infinite rigid wedge. An initial finite barrier is defined and then a calculation made of the impulse signal transmitted on one side of the barrier and received on the other side by adapting the Biot-Tolstoy solution to a digital computer. The integrals of the acoustic pressure impulse are calculated for each source/receiver path for each segment of the barrier. The integrals are then compared and the segments are adjusted and new calculations made until all integral contributions are equal. The integrals are then digitally Fourier transformed to determine attenuation at the desired frequencies. After comparison with the desired attenuation, all segments are proportionately adjusted and the entire computational process reiterated until the optimal attenuation is achieved.
    Type: Grant
    Filed: May 18, 1981
    Date of Patent: November 22, 1983
    Inventor: Herman Medwin
  • Patent number: 4414181
    Abstract: A gas generator outlet manufactured of different metals, each possessing ferent thermal capability, welded together with a tapered internal insulation system. The generator outlet is designed to contain a high-pressure gas having a flame temperature of 3000.degree. F. The external surface of the gas generator outlet remains at or below 600.degree. F. while the outlet interfaces with a metal manifold having a temperature of approximately 3000.degree. F.
    Type: Grant
    Filed: November 2, 1981
    Date of Patent: November 8, 1983
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Edward J. Ford, Jr.
  • Patent number: 4413782
    Abstract: To achieve rapid mixing between a jet flow and its surrounding medium a v is mounted in the jet downstream of the jet nozzle exit. The vane is oscillated in either pitch or plunge by an appropriate excitation mechanism at a constant frequency. The amplitude of oscillation is typically only a few degrees. The oscillation frequency may be varied to control the entrainment rate.
    Type: Grant
    Filed: December 18, 1980
    Date of Patent: November 8, 1983
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Maximilian F. Platzer, John M. Simmons
  • Patent number: 4402516
    Abstract: A method for sealing ports, ducts and the like using a fully consumable mrial as the sealing medium and utilizing the consumable capability to provide remote removal of the seal without damage to the sealed areas and with no remaining obstruction in the port, duct or the like. The fully consumable seal may be configured to the geometry of the aperture to be sealed and has thickness determined by pressure difference across the seal and time required to remove the seal.
    Type: Grant
    Filed: January 3, 1983
    Date of Patent: September 6, 1983
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Werner A. Gans, Frank G. Borgardt, George A. Lo
  • Patent number: 4394579
    Abstract: In a system for isotope enrichment, a method and apparatus for separating atoms of one isotope type from an environment containing plural isotope types. Tunable lasers or laser systems are used to selectively pump atoms of the desired isotope to a metastable excited state several eV above the isotope atom ground state. A reduced ionization energy is then supplied to atoms of the metastable isotopes taking advantage of the longer lifetimes achieved. The resulting plasma created by ionizing atoms of the isotope in the metastable state is subjected to electromagnetic fields to separate atoms of the desired isotope.
    Type: Grant
    Filed: October 22, 1979
    Date of Patent: July 19, 1983
    Inventor: Fred R. Schwirzke
  • Patent number: 4388598
    Abstract: A loss-of-phase-lock indicator circuit is described which detects an out-limit voltage, whether steady or transitory. A pair of comparators, one for the high limit and the other for the low limit, are inserted in series between the tuning voltage and the sweep feedback amplifier, and are dc-coupled to the peak detector in the failure circuit. Additionally, a "dither" voltage is added in series with the phase detector, which ac voltage is large enough to swing the tuning voltage between limits at the loop amplifier output, but small enough to produce little effect on the output during phase lock.
    Type: Grant
    Filed: November 3, 1980
    Date of Patent: June 14, 1983
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: William F. Egan
  • Patent number: 4372803
    Abstract: An improved method for etch-thinning silicon devices using three sequential tches. The device is pre-thinned in a hot KOH-H.sub.2 O etch. The thinning etch is a hydrofluoric, nitric, acetic acids (1:3:10) and a precise amount of hydrogen peroxide mixture. The cleanup etch is a potassium permanganate, hydrofluoric and acetic acids mixture. The result is a repeatedly specular, smooth, uniform, 10 micron thick membrane over the pixels with a p.sup.+ surface to enhance the CCI optical response.
    Type: Grant
    Filed: September 26, 1980
    Date of Patent: February 8, 1983
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Joseph R. Gigante
  • Patent number: 4335987
    Abstract: A system for loading/unloading a series of vertically stacked weights, each eight being substantially flat and having a central aperture. Two parallel aligned spatially separated c-tubes receive a weight and are caused to rotate via a right angle drive system. The weight held by the rotating c-tubes is then lifted vertically and received by a holding mechanism aligned with the central aperture of the weight.
    Type: Grant
    Filed: April 28, 1980
    Date of Patent: June 22, 1982
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Darryl E. Laxo
  • Patent number: 4324140
    Abstract: A method and apparatus are described for electronically scanning a spherily focused beam in a c-scan mode using a spiral path rather than a traditional raster scan pattern. Essential to the technique is an electronically simulated rotating ultrasonic prism operating according to the general electrical input equation V.sub.IN =V.sub.o exp (i.omega..sub.o t+iA cos .OMEGA.t). The technique allows use of a single delay line with simple connections and no requirements of multiple mixing.
    Type: Grant
    Filed: July 31, 1980
    Date of Patent: April 13, 1982
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Bertram A. Auld
  • Patent number: 4313860
    Abstract: A non-photochemically reactive vinyl type antifouling coating. The particr solvents and their particular formulations are selected to reduce photochemical reactions, principally ozone reduction, and to thereby reduce air pollution. The solvent formulations of the vinyl type antifouling coating are also selected to have higher flash-points and to thereby have greatly reduced hazard in application. The coating formulations are selected for painting and preserving the underwater portions of structures in the marine environment. Typical solvents are 2-ethoxyethanol, n-butyl alcohol and n-butyl acetate. Also included are rosin, tricresyl phosphate, pigments and anti-settling agents.
    Type: Grant
    Filed: April 28, 1980
    Date of Patent: February 2, 1982
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Jesse R. Neal, Jr., Henry R. Bleile
  • Patent number: 4303922
    Abstract: A technique and apparatus are disclosed which greatly reduce error in sping antenna direction finding systems due to amplitude modulation of the source. A second omnidirectional antenna and its associated receiver are used in two alternative methods to reduce error. Embodiment one uses the second receiver, having automatic gain control, to control the gain of the first receiver, having input from the spinning antenna and outputting a signal for display. Embodiment two uses two log receivers, one receiving signals from the omnidirectional antenna and the other receiving signals from the spinning antenna. The outputs of the two log receivers are then combined and inputted to an amplifier which may have an inverse log characteristic and the amplifier signal outputted to a display.
    Type: Grant
    Filed: March 3, 1980
    Date of Patent: December 1, 1981
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: David B. Hoisington