Abstract: An over-voltage tolerant input stage in a semiconductor device is disclosed. The input stage includes: an input pad for receiving an input signal to the semiconductor device, a buffer coupled to the input pad for buffering the input signal, a pullup circuit for limiting current in the input signal, a switching circuit coupled to the input pad for controlling the pullup circuit, and a voltage supply coupled to the input pad, the pullup circuit and the switching circuit. In operation, the switching circuit is enabled to cause the pullup circuit to stop current flow between the input signal and voltage supply in the event of an over-voltage condition.

Abstract: A method and apparatus for burn-in of semiconductor devices is disclosed. A semiconductor device that includes built-in self test circuitry is coupled to a socket on a burn-in board. The burn in board and the semiconductor device are heated. Burn-in instructions can be transmitted to the semiconductor device through a JTAG terminal of the semiconductor device. Upon receiving a burn-in instruction through a JTAG terminal, the built-in self test circuitry is operable to perform one or more burn-in function. This allows for burn-in of a semiconductor device without any transfer of data through the data input terminals of the semiconductor device.

Abstract: A frequency synthesizer IC is disclosed that includes a variable delay circuit, a fractional-N phase locked loop circuit, and a feedback loop. The variable delay circuit is electrically coupled to the input of the fractional-N phase locked loop circuit. The feedback loop couples a first control signal from the fractional-N phase locked loop to the variable delay circuit. The variable delay circuit generates a reference signal that has a phase delay that varies in accordance with a second control signal and a first control signal. The fractional-N phase locked loop circuit is operable upon receiving the reference signal to generate the first control signal, the second control signal, and an output signal having a frequency that is a non-integer product of the reference signal.

Abstract: An auto voltage sense circuit uses voltage controlled current sources to generate a desired reference voltage level that closely tracks the variations and changes of a first voltage level and a second voltage level. The auto voltage sensing circuit includes a first voltage controlled current source operable to receive the first voltage level to generate a reference current that is proportional to the first voltage level. The auto voltage sensing circuit also includes a second voltage controlled current source operable to receive the second voltage level and the reference voltage to generate an output current that is proportional to the difference between the second voltage level and the reference voltage. The reference voltage causes the output current to be approximately equal to the reference current so as to generate a reference voltage that is proportional to the difference between the second voltage level and the first voltage level.

Abstract: A method for determining photoresist thickness is disclosed that can be used in a semiconductor fabrication process. A layer of material is formed that has one or more common characteristic relative to the material in the layer that is to be patterned in the semiconductor fabrication process. A layer of photoresist is then formed that has varying thickness. The thickness of the layer of photoresist is determined at a plurality of different points. The layer of photoresist is exposed, developed and etched. The remaining structures are then analyzed to determine photoresist thickness to be used in the semiconductor fabrication process. The determined photoresist thickness is then used in the semiconductor fabrication process to form structures on a semiconductor wafer.

Abstract: A reset circuit for resetting two clock domains resets the two clock domains synchronously with a first clock signal in response to assertion of a system reset. It then de-asserts the resetting of a first of the clock domains in synchronization with the first clock signal, and de-asserts the resetting of a second of the clock domains in synchronization with a second clock signal so that the second clock domain is not operative until after the second clock signal is running.

Abstract: A high speed MOSFET output driver is disclosed that includes a voltage level shifter stage operable to transition an input signal at a first voltage level to an output signal at a second voltage level, an output stage operable to drive high voltage output load, and a hot inverter, biased between the second voltage level and the bias voltage such that the voltage gain of the output signal is increased and at the same time the minimum voltage level of the output signal introduced to the output stage is decreased, improving the control and the transition time of the output signal and allowing all components of the high speed MOSFET output driver of the present invention to be fabricated using a single thin gate oxide process.

Abstract: The present invention includes SRAM memory cells and methods for forming SRAM cells having reduced soft error rate. The SRAM cell includes a first NMOS transistor and a first PMOS transistor having a common gate, and a second NMOS transistor and a second PMOS transistor having a common gate. A first resistor is electrically coupled on one end to the drains of the first PMOS transistor and the first NMOS transistor; and is electrically coupled on the other end to the common gate of the second NMOS and second PMOS transistors. A second resistor is electrically coupled on one end to the drains of the second PMOS transistor and the second NMOS transistor; and is electrically coupled on the other end to the common gate of the first NMOS transistor and the first PMOS transistor. The added resistor can be embedded in a contact opening such that it does not take up valuable surface area on the semiconductor substrate. Thereby, data loss from soft errors can be avoided while preserving small memory cell size.

Abstract: The present invention relates to a shallow trench isolation structure and a method for forming a shallow trench isolation structure on a semiconductor substrate. A masking structure that includes a hard mask is formed over the semiconductor substrate and an etch is performed so as to form trenches within the semiconductor substrate. A shallow trench isolation structure and a method for forming a shallow trench isolation structure are disclosed. Oxidation enhancing species are then implanted into the bottom surface of the trenches and an oxidation process is performed. The oxidation enhancing species will form a deep oxidation region below the bottom surface of each trench and will form thinner oxidation regions within side surfaces of trenches. A layer of dielectric material is then deposited to fill the trenches. A chemical mechanical polishing process is performed to remove those portions of the dielectric film that overlie the hard mask.

Abstract: A rate limiting circuit for data stream transmissions provides a generated clock signal to a buffer interposed between source and destination components so as to programmably adjust the maximum rate that data can be passed through the buffer. A counter is incremented by one each (1+RLmax) cycles of a clock signal, where RLmax is the larger of a user programmable value (RL) and a manufacturer one-time programmed value (SERL). A controller receiving a request to access the buffer for a read or write operation, checks the count of the counter before activating the access enable line. If the count is greater than zero, then the controller activates the access enable line while decrementing the counter by one. If the count is zero, however, then the controller waits until the count is greater than zero before activating the access enable line to grant the request.

Abstract: A micro leadframe package and a method for forming a micro leadframe package are disclosed in which two leadframes that include paddles are coupled together such that only dielectric material extends between the two paddles. Semiconductor die are attached to paddles on the top leadframe, and a wire bonding process is then performed, followed by a molding process, plating, and a singulation process. This forms a micro leadframe package that, when ground is coupled to one paddle and power is coupled to the other paddle, provides a low inductance path for both power and ground supply to the semiconductor die. Moreover, as only dielectric material extends between the two paddles, the two paddles and the dielectric material that extends between the paddles form a capacitor, providing decoupling capacitance within the micro leadframe package.

Abstract: A process for forming a void-free dielectric layer is disclosed in which adjoining gate film stacks are formed on a semiconductor substrate. Each gate film stack includes a silicide layer and a hard mask that overlies the silicide layer. A first selective etch is performed so as to reduce the width of the hard mask on each of the gate film stacks, exposing portions of the top surface of the silicide layer. A second selective etch is then performed to reduce the width of the silicide layer. Spacers are then formed on opposite sides of each of the gate film stacks, and a dielectric film is formed that extends over the gate film stacks. By reducing the width of the hard mask layer and the silicide layer, gate film stacks are obtained that have reduced width near the top of each gate film stack, preventing voids from forming in the dielectric film.

Abstract: The present invention relates to a shallow trench isolation structure and a method for forming a shallow trench isolation structure on a semiconductor substrate. A masking structure that includes a hard mask is formed over the semiconductor substrate, and an etch is performed so as to form trenches within the semiconductor substrate. An anti-reflective film is deposited such that it extends within the trench. A dielectric film is deposited over the anti-reflective film such that it fills the trench. A heating process step is then performed to anneal the substrate, rounding the corners of the trench. A chemical mechanical polishing process is performed to remove those portions of the anti-reflective film and the dielectric film that overlie the hard mask. The hard mask is then removed, producing a shallow trench isolation structure that prevents lifting and notching in subsequent fabrication steps.

Abstract: A method for forming self-aligned contact devices in a core region of a semiconductor substrate and non-self-aligned contact devices in a non-core region of the semiconductor substrate is disclosed in which a single gate film stack is used for forming gate structures in both the core region and in the non-core region. A dielectric layer is formed over a semiconductor substrate and a gate film stack is formed over the dielectric layer. The gate film stack is then patterned so as to form gate structures within both the core region and the non-core region.

Abstract: A method for forming CMOS devices on a semiconductor substrate is disclosed in which gate structures are formed within both the core region and the non-core region of the semiconductor substrate. The gate structures include a gate dielectric layer and a gate film stack that includes a conductive layer and an overlying hard mask. The hard mask is then removed from the gate structures in the non-core region. A salicide process is then performed so as to form a silicide layer in the non-core region. A barrier layer is formed that extends over the core region and a pre-metal dielectric film is formed that extends over the barrier layer. A selective etch process is performed so as to form self-aligned contact openings that extend through the pre-metal dielectric film and through the barrier layer in the core region. These openings are then filled with conductive material to form self-aligned contacts in the core region.

Abstract: The present invention relates to a method for forming a thin film resistor and a thin film resistor formed over a semiconductor substrate. A gate structure is formed and a dielectric layer is formed over the gate structure. A via is then etched that extends through the dielectric layer so as to expose a portion of the gate structure. A layer of titanium nitride is deposited using a chemical vapor deposition process. A rapid thermal anneal is performed in an oxygen ambient. The rapid thermal anneal incorporates oxygen into the titanium nitride, forming titanium oxynitride film. A layer of dielectric material is then deposited and etched-back to form a dielectric plug that fills the remaining portion of the via. The titanium oxynitride film is patterned to form a titanium oxynitride structure that is electrically coupled to the gate structure. A metal layer is deposited and patterned to form an interconnect structure that electrically couples the titanium oxynitride structure to other circuitry.

Abstract: Gate stacks with sidewall spacers having improved profiles to suppress or eliminate void formation between the gate stacks during gap-filling is disclosed, along with a method of forming the gate structures over a semiconductor substrate. A gate dielectric layer is formed on a semiconductor substrate. Then, a gate stack 24 having a sidewall is formed over the gate dielectric layer. The gate stack 24 comprises a conductive layer 28 and a hard mask 30 overlying the conductive layer 28. A liner 32 is selectively deposited over the gate stack 24 such that the liner 32 is deposited on the hard mask 30 at a rate lower than the rate of deposition on the conductive layer 28. Thus, the liner 32 is substantially thinner on the hard mask 30 than on the conductive layer 28. A nitride spacer is formed over 34 the liner 32. A PMD layer is formed over the resultant structure, filling the gaps between adjacent gate stacks and substantially free of voids.

Abstract: Clock processing logic and method for determining clock signal characteristics in reference voltage and temperature varying environments are described. A sample vector is characterized by bit locations corresponding to sequentially increasing delay values so that values stored in such bit locations indicate clock signal edges where value transitions occur. In one embodiment, edge detection logic and sensitivity adjustment logic are used in determining the clock period from such a sample vector. In another embodiment, an edge filter, sample accumulation logic, and clock period and jitter processing logic are used in determining an average clock period and clock jitter from a predefined number of such sample vectors.

Abstract: A CMOS structure and a process for forming CMOS devices are disclosed in which gate film stacks are formed over a semiconductor substrate. A barrier layer and a first dielectric film are formed such that they extend over the gate film stacks. Metal lines are formed over the pre-metal dielectric film and spacers are formed that extend on opposite sides of the metal lines. A second dielectric film is formed that extends over the metal lines. A masking structure is formed that defines a contact opening. Selective etch processes are performed to form a self-aligned contact opening, with the adjacent metal lines and spacers aligning the self-aligned contact opening between adjacent gate film stacks. A metal layer is then deposited and planarized to form a self-aligned contact. The masking structure can also define additional contact openings, which are simultaneously etched and filled with metal to form borderless, strapped and shared contacts.