Abstract: A ROM includes a sense amplifier implemented by a current mirror circuit having a data line, a memory cell array, a plurality of digit lines and column selector for coupling the data line to one of the digit lines. The precharge circuit couples the data line to the ground during an initial stage of the precharge period to precharge the data line before the column selector couples the data line to the one of the digit lines, and also precharges the digit line through the data line after the column selector selects the digit line. A higher precharge operation can be achieved by the standby mode of the precharge circuit while precharging the data line.

Abstract: The coin identification device comprises a gravity fed chute structure having an opening for receiving a coin to be identified, walls to guide the coin as it moves through the chute and an opening for the coin to exit. A wake-up circuit with sensing coils mounted near the chute opening provides an output signal when the presence of a coin is detected. Two coin sensing circuits, each having an oscillator with a particular coil arrangement are used to sense the characteristics of the coin passing through them. The first coin sensing circuit includes a coil arrangement having a coil mounted on the chute with its axis in the direction of the coin path such that the coin will pass through it and forming part of a first oscillator to create lines of flux parallel to the coin path.

Abstract: The outer periphery of a workpiece (semiconductor wafer) 42 is caused to come into contact with an abrasive material (abrasive cloth) 28 in a cylindrical polishing drum 23, and the polishing drum 23 and the workpiece 42 are relatively rotated, whereby the region where the outer periphery of the workpiece is in contact with the abrasive cloth 28 is increased and a polishing effect can be increased.

Abstract: In a semiconductor device fabricated according to a method of the present invention, a microelectronic capacitor is provided with a double-layered tantalum oxide film serving as a capacitance insulation film. The double-layered tantalum oxide film is constructed of: a first tantalum oxide film formed at a temperature of about 510° C. under a high pressure of about 3.0 Torr in an atmosphere containing oxygen in a first film forming step; and, a second tantalum oxide film formed on the first tantalum oxide film at a temperature of about 510° C. under a low pressure of about 0.3 Torr in an atmosphere free from oxygen in a second film forming step.

Abstract: A computer subsystem of a computer includes a CPU, RAM, display, storage device, input device(s), and a digital-audio generating IC. A CD-ROM subsystem of the computer includes a CD-ROM drive and CD-ROM control buttons for controlling CD-ROM drive's operation while playing audio CDs. An audio-interface IC of the CD-ROM subsystem couples a bus of the computer subsystem to the CD-ROM drive, and to the control buttons. The audio-interface IC, in one operating mode, relays commands and data between the bus and the CD-ROM drive. A second operating mode permits turning the computer subsystem off while the audio-interface IC autonomously responds to the control buttons and transmits commands to the CD-ROM drive for playing an audio CD.

Abstract: Polymers are produced by alternate anionic polymerization of conjugated dienes and/or monomalkenyl arenes to form a living polymer chain, followed by precise incorporation of protected functional groups into that living polymer chain.

Abstract: A semiconductor device has a thin semi-insulating polycrystalline silicon (SIPOS) film on the surface of a silicon substrate having a diffused region therein. The SIPOS film is thermally treated at the bottom of a via-plug of an overlying metallic film to form a metallic silicide for electrically connecting the via-plug with the diffused region, whereas the SIPOS film is maintained as it is for insulation on a dielectric film. The SIPOS film protects the diffused regions against over-etching to thereby improve the junction characteristics and provide a larger process margin for contacts between the metallic interconnects and the diffused regions.

Abstract: A remittance delivery system is provided that that accepts payment information from a variety of applications (e.g. vendor payments, taxes, claims, payroll, T&E, commissions, trust, etc.), translates the data into a single, unified data file structure, and forwards the remittance data via a user-defined path, for example, email, fax, print, internet, etc. Accordingly, the preferred embodiment of the present invention provides a remittance delivery system comprising a file integration engine is provided for receiving payment data including remittance data in a one of a plurality of data formats and translating and formatting the payment data into a single, pre-defined data format. In addition, a remittance generating engine is provided for receiving the pre-defined data and for forwarding remittance data to at least one remittance recipient.

Abstract: In a semiconductor memory device including a plurality of sense amplifiers arranged in rows, columns, a plurality of local data input/output line pairs, each pair being connected to one row of the sense amplifiers, a global data input/output line pair, a plurality of switches each connected between one of the local data input/output line pairs and the global data input/output line pair, and a differential amplifier connected to the global data input/output line pair, at least one pull-up circuit is connected to the global data input/output line pair. At least one of the switches is connected to the global data input/output line pair between the pull-up circuit and the differential amplifier.

Abstract: A solid state image sensor having an unnecessary electric charge exhausting section formed adjacent to a horizontal electric charge transfer section, comprises an N−− semiconductor substrate 1 having a P-well layer 2 formed on a principal surface thereof. On the P-well layer 2, there is formed a horizontal electric charge transfer section adjacent to one end of each of a number of vertical electric charge transfer sections. A transfer channel 15A of each vertical electric charge transfer section and an electric charge barrier region 5A of a transfer channel of the horizontal electric charge transfer section are formed of an N-type semiconductor region, and an electric charge storing region 6A of the transfer channel of the horizontal electric charge transfer section are formed of an N+ semiconductor region. A potential barrier region 11A is formed at the side of the horizontal electric charge transfer section opposite to the vertical electric charge transfer sections.

Abstract: A method for forming a fine pattern on a chemical sensitization photoresist includes the consecutive steps of exposing a photoresist film with KrF excimer laser, developing the exposed photoresist film to form a photoresist pattern, separating protective group from the photoresist pattern, and heating the photoresist film to make the photoresist pattern to have a swelling property, thereby reshaping the openings in the photoresist pattern while reducing the size of the openings. The method achieves a finer pattern in a design rule of 0.30 to 0.18 &mgr;m without degradation of the shape.

Abstract: A thin film magnetic head has first and second magnetic pole layers and, a thin film coil, a magnetic gap layer, and a magnetically insulating layer. The magnetically insulating layer is disposed along a plane facing a recording medium, and divides at least one of the front end section of the first magnetic pole layer and the frond end section of the second magnetic pole layer into a plurality of sub-sections. An additional magnetic pole layer may be provided on at least one of the front end section of the first magnetic pole layer and the front end section of the second magnetic pole layer with a magnetically insulating layer being interposed therebetween. The thin film magnetic head thus fabricated enables the reduction of undershoots to appear at both sides of a main peak of the waveform a signal reproduced by the magnetic head.

Abstract: A semiconductor memory device includes a pair of data lines, a precharging and equalizing circuit, a setting circuit and a data write circuit. The precharging and equalizing circuit is provided between the data lines to equally precharge the data lines to a first voltage in response to a precharge and equalize signal. The setting circuit is provided between the data lines to set one of the precharged data lines to a second voltage in response to data signals. The second voltage is lower than the first voltage. Also, a data Is written to a memory cell based on the second voltage of the one precharged data line and the first voltage of the other precharged data line. The data write circuit supplies the data signals to the setting circuit based on the data.

Abstract: The present invention broadly relates to the mechanical locking and constrainment of an active layer on a given solid surface, wherein the active layer is formed. In addition, disclosed herein is a macrostructured mold with improved heat-absorbing ability comprising a solid base and an active layer disposed on the solid base, wherein the active layer comprises a metal matrix composite formed by the process of infiltrating a powdered preform with a molten infiltrating alloy at an infiltrating temperature, wherein the solid base is formed from material with a melt temperature higher than the infiltration temperature. The solid base further contains one or a plurality of preformed grooves for circulation of cooling fluid, wherein the active layer seals the grooves in the solid base wherein the sealed grooves are designed to contain the cooling fluid thereby providing a mold with improved heat-absorbing ability.

Abstract: A method for diagnosing disorders in a subject organism, in which fluid samples from normal and abnormal organisms are analyzed to generate electrical signal patterns representative of molecular constituents of the samples. A data base of electrical signal patterns representative of frequency distribution of sample constituents from the abnormal organisms having known categories of disorders and control samples from normal organisms are created, and a fluid sample taken from the subject organism is analyzed by comparing it to the data base for conformity to the electrical signal patterns representative of the frequency distribution. The invention has particular applicability to assisting in the diagnosis of degenerative diseases such as Alzheimer's Disease, Parkinson's Disease, Huntington's Disease, schizophrenia, amyotrophic lateral sclerosis and Progressive Supernuclear Palsy.

Abstract: An electrical insulation composition comprising two or more crosslinked insulating layers wherein the layers comprise compatible polymer materials wherein crosslinking is present between the compatible layers to bond said layers together so that the crosslinked layers, when applied to a conductor, strip from said conductor without substantial separation. In addition, the crosslinked layers provide at least one of the following continuous service ratings when applied to 10 AWG or smaller conductor: i. greater than about 10 kV DC; ii. greater than about 5 kV AC.

Abstract: A semiconductor chip has a first ground line for maintaining a stable ground potential for the internal circuit. The first ground line is connected to a second ground line disposed on a scribe region of the semiconductor chip via a bonding pad, which is connected to an external lead frame. I/O circuit has a third ground line directly connected to the second ground line without passing the bonding pad. The noise propagated from the third ground line to the first ground line is reduced by passing the noise through the bonding pad.