Abstract: Electro-optical element (shutter) which is switchable between two or more optical states and has a large mechanical rigidity because an extra spacer edge is provided so that no or hardly any spacers are required in the active area. By providing inlet and outlet apertures in the extra spacer edge, contaminations are prevented from being left in the active area during filling. The active area thus remains free from disturbances.

Abstract: In a color projection display system having a source of white light, an electro-optic light modulator for modulating the light in accordance with a display signal, a projection lens, and dichroic filters for separating the white light into color components prior to modulation, and for recombining the modulated color components prior to projection, the color uniformity of the display is improved by designing the filters to have different cut-off wavelengths of separation and recombination for at least one of the color components.

Abstract: An electro-optic display device having a matrix array of picture elements and a thin film structure of storage capacitors associated with each picture element, the device provided with redundancy in the storage capacitor structure by segmenting one of the capacitor plates into two plates to produce two capacitors in series. Because the segmented plates are all on one level of the thin film structure, no additional masking steps are required.

Abstract: In an electronic device, such as an active matrix display device or the like, comprising a top gate amorphous silicon thin film transistor (10) in which one or both of the source and drain electrodes (15, 16) is of transparent conductive material such as ITO, the PECVD deposited semiconductor layer (18) extending over and between the source and drain electrodes of the TFT is formed as first and second sub-layers (18A, 18B), using different source gas compositions. A noble inert gas such as helium is used as dilutant in forming the first sub-layer adjacent the source and drain electrodes to avoid reduction problems while hydrogen is used as the dilutant in forming the second sub-layer to achieve high stability and mobility characteristics in the completed transistor.

Abstract: The invention relates to a color filter layer of a cholesterically ordered material, in which the axis of the molecular helix is directed perpendicularly to said layer. According to the invention, the color filter layer comprises at least one dye which is able to absorb undesired colors caused by color shifts. A correct choice of the bandwidth of the primary colors of the color filter layer and the dyes significantly alleviates the problem of undesired color shift. The invention also relates to a liquid crystal color display device of the reflective type, which is provided with such a color filter layer.

Abstract: A method is provided for manufacturing, in four masking steps, an active matrix for a liquid crystal display screen whose control transistors are of the top-gate type. The liquid crystal display screen obtained by means of this method is particularly suitable for use in image projection systems. The method comprises the steps of: depositing and etching a first opaque layer on a transparent insulating plate; depositing an insulating transparent layer; depositing and etching a transparent conductor; selectively depositing an ohmic contact and subsequently depositing an intrinsic semiconductor material and a gate insulating material, and first etching of the assembly, depositing and etching an opaque conducting layer, and etching of the semiconductor layer and gate insulating layer by using as a mask the etched opaque conducting layer.

Abstract: A display device comprising a channel plate (39) having channels (30, 30′, 30″) containing an ionizable gas (33), and walls of the channels (30, 30′, 30″) being provided with electrodes (31, 32) for selectively ionizing the ionizable gas (33) during operation. The display device further includes an electro-optical layer and means for activating said electro-optical layer. The display device is characterized in that the ionizable gas (33) comprises a gas of the group formed by hydrogen, deuterium and deuterium hydrogen, and in that the display device is provided with means for supplying hydrogen, deuterium or deuterium hydrogen to the ionizable gas. Suitable materials include VZ2, LZ3, PdZ0.6, LaNi5Z6, LaNi2Zx, LaCo5Zx, Zr—Mn—Zx or Pd—Ag—Zx, where L is a lanthanide and Z is hydrogen and/or deuterium. The means are preferably situated in a recess (48) around the channel plate (39), in the pump connection (45) and/or they form part of the electrodes (31, 32).

Abstract: The manufacture of AMLCDs and similar large-area electronic devices includes forming thin-film circuit elements (11, 12, 13, 14) on a substrate (10), with some of the process steps being self-aligned by shadow-masking. An upstanding post (20) is provided at a first area (10a) of the substrate (10) to one side of a second area (10b) where there is to be formed a thin-film circuit element (11), for example a TFT. First and second parts of the circuit element (11), for example, the TFT channel (3′) and gate (5a′), are defined by respective first and second angled exposures with beams (61, 62) from the direction of the upstanding post (20) which acts as a shadow mask for part of the second area (10b). A plurality of the upstanding posts (20) may be at least partly retained in the manufactured device, for example, as supports on which a plate (30) is mounted so as to be spaced from the substrate (10).

Abstract: A laser crystallization method comprises the steps of providing a film of semiconductor material on an insulating substrate, and scanning a pulsed laser beam over the film, the laser beam being shaped to define a chevron. Each pulse of the laser beam comprises at least a first pulse portion of a first energy and a second subsequent pulse portion of a second energy. The first and second pulse portions of each pulse are applied at substantially the same position over the film. This method is used to form electronic devices and enables reliable crystallization to form large single crystal areas in thin semiconductor films.

Abstract: A diode-addressed color display comprising an UV-diode and a phosphor of the general formula LnL.sub.3 X.sub.2, wherein Ln=Eu.sup.3+, Tb.sup.3+, Tm.sup.3+, Dys.sup.3+, Sm.sup.3+, L=4-R-4'-benzophenone carboxylic acid, wherein R=phenyl, benzyl, CH.sub.3, CF.sub.3, C.sub.2 H.sub.5, F, Cl, OCH.sub.3, CH.sub.3 CO; 4-R-4'-benzophenone acetylacetonate, wherein R=phenyl, benzyl, CH.sub.3, CF.sub.3, C.sub.2 H.sub.5, F, Cl, OCH.sub.3, CH.sub.3 CO; 4-acetophenone carboxylic acid, 4-trifluoroacetophenone carboxylic acid, 4-acetophenone acetylacetonate or 4-trifluoroacetophenone acetylacetonate and X=1/2 phenanthroline, 1/2 diphenyl phenanthroline, 1/2 4-Cl-phenanthroline, 1/2 bipyridine, 1/2ethylenediamine, triphenyl phosphineoxide, trimethyl phosphineoxide, triethyl phosphineoxide, 1/2 diethylene glycol-dimethylether (diglyme) or ethanol.

Abstract: A thin film transistor has source (20) and drain (10) electrodes which each comprise a coiled elongate portion. One (14) of these portions coils inwardly to a central connector portion (12), and the other (22) coils outwardly to a peripheral connector portion (16). The two coiled portions are interlinked to define between them a substantially uniform spacing (24) corresponding to a channel region of the transistor. This arrangement enables the length to width ratio of the transistor to be reduced, giving rise to an increased current capacity of the transistor. By making one elongate portion (14) longer than the other (22), the transistor can have a source-gate capacitance lower than its drain-gate capacitance. These transistors may form switching elements in large area electronic devices, such as electroluminescent displays, plasma displays, electrostatic print heads, and X-ray dynamic beam attenuators.

Abstract: A method and a device for manufacturing an electroluminescent display, by means of which a first pattern of electrodes (2) is provided on a flat surface (1) on which a layer of organic electroluminescent material (7) is subsequently deposited. A mask (10) with strips of mask material (11) is formed on a separate support (14), the strips being separated from each other by spaces (12) which correspond to a second pattern of electrodes (8). Subsequently, said mask is transferred to the layer of electroluminescent material in a dry manner by pressing the support onto the substrate. After transferring the mask (10), a second electrode material (13) is deposited, the electrodes of the second pattern being formed in the spaces in the mask. The layer of electroluminescent material (7) may be deposited by vapor deposition, spin-coating or screen-printing.

Abstract: A display device (1) with a display window (3) provided with an anti-static, light-absorbing coating (9) on the basis of silicon dioxide comprising an electroconductive, light-absorbing pigment or dye, for example soot (carbon black). A method of providing the display window (3) with an anti-static, light-absorbing coating (9).

Abstract: Electroluminescent device having an active layer of an electroluminescent material situated between two patterns of electrodes at least one of which is transparent to light emitted by the active layer, one of the patterns comprising a material for injecting charge carriers for emission a control for supplying bias voltage across a part of the active layer or setting bias current through the part of the active layer, means for applying a voltage in the reverse direction across part of the active layer, for measuring current associated with voltage applied in the reverse direction and for varying bias voltage or current depending on the measured current value.

Abstract: To prevent breakdown of an insulating layer located underneath a gate electrode, the gate electrode is connected to an external terminal via a high-ohmic resistor. The high-ohmic resistor may form part of a resistive network for biasing voltages for a plurality of gate electrodes. The resistive network may be realised partly on the insulating layer.

Abstract: A color cathode ray tube is provided with a saddle-shaped shadow mask.As a result, the sensitivity to doming and microphonics of the mask is improved. This is advantageous, in particular, for a cathode ray tube having a very flat display window. Preferably, the display device in which the cathode ray tube is employed is provided with two dynamic quadrupoles, for example, in front of the electron gun and in front of a deflection unit.

Abstract: An organic electroluminescent device and a method of manufacturing such a device. By patterned exposure of an alkylatable-compound-containing organic layer of the device to an alkylating agent, a device is obtained which, in operation, exhibits patterned light emission, without it being necessary to structure the electrode layers. A salt is locally formed by means of alkylating in accordance with a pattern. If the salt contains ions which can move under the influence of an electric field, the threshold voltage necessary to produce light emission is reduced.

Abstract: Magnetic heads comprising at least one core portion of polycrystalline MnZn-ferroferrite material exhibit a very low so-called "rubbing noise" level if the average grain size of the material ranges between 0.2 and 3.0 micrometers. The rubbing noise level of these heads is even lower than the electronic noise level if the average grain size of the material ranges between 0.5 and 2.0 micrometers. By virtue thereof, the heads can very suitably be used in the frequency range from 5 to 100 MHz.

Abstract: The display screen (3) of a cathode ray tube (1) is provided with an antistatic coating (8) which comprises conductive, for example ATO (Sb:SnO.sub.2) particles. The coating comprises at least one additional layer (10) of silicon dioxide to obtain an antireflective effect.

Abstract: A light-emitting device comprising a UV-diode with a primary emission of 300 nm.ltoreq..lambda..ltoreq.370 nm and a phosphor layer including a combination of a blue-emitting phosphor having an emission band, with 430 nm.ltoreq..lambda..ltoreq.490 nm, a green-emitting phosphor having an emission band, with 520 nm.ltoreq..lambda..ltoreq.570 nm and a red-emitting phosphor having an emission band, with 590 nm.ltoreq..lambda..ltoreq.630 nm, emits high-quality white light. The color-rendering index CRI is approximately 90 at a color temperature of 4000 K. The color rendition depends only on the composition of the three phosphors, not on the relation between converted and non-converted light, and hence can be readily controlled and regulated.