Abstract: Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of the compound, followed by depositing a thin layer of the compound by migration enhanced epitaxy (MEE). Growth of the remainder of the layer by MBE results in much lower defects than if the entire layer had been grown by MBE. Layers are useful in devices such as LEDs and injection lasers.

Abstract: Multilayer thin film dichroic filters composed of alternating layers of high (H) and low (L) refractive index have three groups, a lower group next to the substrate having a ratio Ra of high and low index layers Ra1; a second mid group having a ratio Ra of high and low index layers Ra2; and a third upper group having a ratio Ra of high and low index layers Ra3; and the ratios have the relationship Ra1<Ra2<Ra3. Such filters exhibit improved angle sensitivity and wavelength transition values, and are useful for example in color projection displays.

Abstract: A plasma display device with a phosphor screen, comprising a phosphor composition of an UV-phosphor furnished with a coating which includes one or more catena-polyphosphates of metals of the group formed by the alkaline earth metals, zinc, cadmium and manganese, can effectively be used to counteract degradation of the phosphor by UV-excitation.

Abstract: A surface smooth enough to allow the formation thereon of a single domain magnetic element is obtained by covering a polished layer with a thin layer of the same material, to smooth sharp edges and corners. The resulting structure is useful in thin film magnetic heads.

Abstract: A device, such as a PALC device, has a gas-tight envelope accommodating a number of channels comprising an ionizable gas. Each channel has two electrodes. Adjacent electrodes in different channels are interconnected. Each pair of interconnected electrodes has a lead, which leaves the gas-tight envelope. The pitch between the exits of the leads is larger than the pitch of the channels. In embodiments, the electrodes are grouped together, so that a reduction of the number of leads exiting the gas-tight envelope can be achieved, which enables an (additional) increase in the pitch between the exits of the leads to be attained.

Abstract: Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.

Abstract: An apertured shadow mask directs electron beams toward phosphor elements on the inside surface of the face plate of a CRT. The mask is fixed to a rectangular frame having corner brackets connected by light-weight diaphragm strips and resilient plates molded to the brackets. The resilient plates have holes toward the distal ends thereof which engage pins embedded in a skirt surrounding the face plate. The plates are precipitation hardened stainless steel having a thickness of 0.20 mm to 0.30 mm and provide sufficient spring force to retain the mask and frame as well as the internal magnetic shield which is fixed to the corner brackets by clips.

Abstract: A flat panel display or other large-area electronic device comprises at least one TFT (T1;T2) having a crystalline channel region (1) and amorphous edge regions (13) adjacent side-walls (12) of the TFT island (11). The TFT is fabricated by steps which include:(a) depositing on substrate (10) a thin film (11') of amorphous semiconductor material to provide the semiconductor material,(b) removing areas of the thin film (11') to form the side walls (12a, 12b) of each island (11),(c) forming a masking pattern 20 over the edge regions (13a, 13b) preferably on an insulating film 22, and(d) directing a laser or other energy beam (50) towards the islands (11) and the masking pattern (20) to crystallise the un-masked semiconductor material for the crystalline channel region (1), while retaining amorphous semiconductor material adjacent the side walls (12a, 12b) where the edge regions (13a, 13b) are masked from the energy beam (50) by the masking pattern (20). The resulting device structure has e.

Abstract: A compensator (for example, for a liquid-crystal display device) comprising a retardation foil with a tilted optical main axis and, in addition, a second optically active layer, can be manufactured in a simple manner by providing the retardation foil and the second layer on different sides of a transparent support.

Abstract: Anodising treatments are used to form insulating films (12) in the manufacture of a flat-panel display or other large-area thin-film electronic device. A first film (1,101) of anodisable material (e.g Al) is anodised through a part of its thickness to form an anodic second film (2). A mask pattern (4), e.g of photoresist, is provided at least on the second film (2) to define an area (5) where the second film (2) is etched away through at least a part of its thickness and where a further anodising step is carried out to form an anodic third film (3) contiguous with a remaining part of the anodic second film (2). The manufacture is simplified by using reverse-anodising in an electrolyte solution (20) to carry out the etching of the second film (2).

Abstract: A description is given of an electro-optical switching device (1) comprising a transparent substrate (3), a switching layer (5) of yttrium hydride as a first electrode, a palladium layer (7), an electrolyte layer of, e.g. Ta.sub.2 O.sub.5 (9), a layer of WO.sub.3 hydride as the second electrode (11), and a transparent ITO-layer (13). Under the influence of a potential difference or direct current between the electrodes (5) and (11), the yttrium hydride is electrochemically converted from a low-hydrogen-content state to a high-hydrogen-content state, or vice versa. The conversion between both compositions is reversible, and is accompanied by a change in optical transmission. Apart from Y, other trivalent metals may be used, such as Gd and La.

Abstract: A color cathode ray tube of the in-line type has a pre-focusing lens part and a main lens part. The prefocusing lens part comprises a first (G1) and a second (G2) electrode, each having apertures for passing electron beams. The apertures in the second electrode comprise a first (G2A) and a second (G2B) aperture, each being substantially stigmatic. The diameters of the apertures are different and 1.5.ltoreq..O slashed.G2B/.O slashed.G2A.ltoreq.5.

Abstract: A method for manufacturing an electron gun for a cathode ray tube. The method comprises a first step in which a number of securing means are made in a planar element (e.g. plate or strip), a second part in which the securing means are secured to an insulating support rod, a third part in which the insulating support rod-securing means assembly is detached from the planar element, whereafter connections are made to a stack of electrodes to form the electron gun.

Abstract: A color display device is provided with a black-matrix layer, a phosphor pattern and color-filter layers. The theological behavior of the suspension and/or the evaporation of volatile constituents is influenced by the topology of the color-filter layers, with, in particular, projecting color-filter layers exerting an influence. As a result, variations in thickness between the phosphor layers occur. By reducing the differences in height between a projecting color-filter layer and the black-matrix layer, the variations in thickness between the phosphor layers are reduced and hence the quality of the picture displayed is improved.

Abstract: A color display device for emitting, in operation, red, blue and green light having a substrate provided with a black matrix and only blue and red color filter layers.

Abstract: A degaussing circuit includes an AC mains voltage, a series arrangement of a degaussing coil (Ld) and a switching element (S1) coupled between the input terminals (it1,it2). A measuring circuit (3) continuously measures a value (Ms) representing an actual value of either the degaussing current (Id) through the degaussing coil (Ld) or the AC mains voltage (Vac). A detecting circuit (2) detects a level crossing instant (ts) at which the actual value (Ms) crosses a predetermined value (Vref2). A control circuit (1) determines a switching instant (tei,tstv) of the switching element (S1) in response to the level crossing instant (ts) for generating a peak value of the degaussing current (Id) related to the actual value of the degaussing current (Id) or the AC mains voltage (Vac) at the level crossing instant (ts).

Abstract: A cathode having a matrix body (1) impregnated with an alkaline earth compound, whose surface is provided with a top coat (2, 3, 4) comprising a high melting point metal, such as particularly tungsten, and scandium. A high emission at a low operating temperature and simultaneously a rapid recuperation after ion bombardment as well as a long lifetime are achieved in that the top coat comprises at least two layers of different composition, with a purely metallic layer (5, 6, 7) being provided on the impregnated matrix body (1), which layer comprises scandium and a high melting point metal such as particularly tungsten and/or rhenium, and in that a metallic layer of a high melting point metal such as particularly tungsten is provided as a sealing layer.

Abstract: A display screen, in particular a flat display screen, having a glass face plate with a transparent electrode layer of a metal oxide, for example indium-doped tin oxide (ITO), a phosphor layer and an adhesive intermediate layer of an alkali silicate between the electrode layer and the phosphor layer.

Abstract: System comprising a magnetic head (1) and a measuring device connected to the magnetoresistive element. The magnetic head has a head face (5) with a transducing gap (15) and comprises a magnetoresistive element (13) and a magnetically conducting yoke with an electrically conducting element (11a) for generating a magnetic field intersecting the magnetoresistive element. The system also comprises a current device connected to the electrically conducting element.

Abstract: In the manufacture of an electronic device comprising thin-film circuitry, a semiconductor film (1) on a polymer substrate (2) is subjected to a laser treatment, for example laser crystallisation, with a laser beam (10). The beam is reflected by the film (1). Significant non-uniformities in the laser treatment are found to occur due to a local overheating effect if the reflected laser beam 10b impinges again on the heated area of the film (1). Thus, the invention identifies a particularly acute problem which arises when the device substrate (2) is of a heat-distortable polymer material in that the substrate (2) may experience temporarily a concave distortion at an area where the semiconductor film (1) on the substrate (2) is heated by the incident laser beam (10). The beam is focused as well as reflected by the concave distortion in the substrate (2).