Abstract: A semiconductor structure having a surface insulating layer formed as a grid with charges implanted in the insulating material to prevent inversion and, hence, channeling between adjacent semiconductor regions, preferably for use in a nonblooming vidicon. The method of manufacturing such a structure uses ion implantation to create immobile positive charges in a grid pattern in an insulating layer in regions spaced from the interface between the insulating layer and the semiconductor body. The insulating layer is of sufficient thickness that substantially all of the charge sites in the insulating layer are separated from the outer surface of the insulator by a sufficient distance to effectively prevent a negative electric field from reaching into the silicon.

Abstract: A method for brazing nickel to aluminum in a vacuum and product produced thereby. The outer surface of the aluminum member to which the nickel member is to be brazed is precoated with a layer containing silicon and magnesium. The nickel and aluminum members are placed together in an oven at reduced pressures and heated to a temperature of approximately 593.degree.C cracking the oxide coating upon the aluminum sheet. The presence of magnesium and silicon in the surface of the aluminum sheets makes possible an excellent braze with a large filleted area. The process may be further adapted for brazing other metal components to aluminum by first precoating the component with nickel.

Abstract: High accuracy function calculating apparatus using a minimum of components and storage locations. Second difference values of the function to be generated are stored in a read-only memory which is addressed by an incrementable and reversible address counter. A first accumulator circuit connected to the output of the read-only memory calculates the first difference values of the function. A second accumulator coupled to the output of the first accumulator calculates the values of the desired function. The apparatus is used to advantage in radar azimuth converter applications as well as in general purpose function calculating applications.

Abstract: A temperature compensated surface acoustic wave device having an SiO.sub.2 film layer upon a substrate of piezoelectric material. The positive temperature coefficient of delay of the piezoelectric substrate is counterbalanced by the negative temperature coefficient of the SiO.sub.2 layer. The thickness and shape of the SiO.sub.2 layer are chosen to give a zero first order temperature coefficient for the composite device. Lithium niobate and lithium tantalate are preferred piezoelectric materials for the substrate. A high degree of temperature stability is thereby obtained with coupling coefficients much greater than were previously obtained by prior temperature compensated surface acoustic wave devices.

Abstract: A multicolor magnetographic printing system wherein a magnetizable surface is recorded upon with a different recording wavelength for each color to be printed. Toner is supplied which includes a mixture of different types of particles, each having a different color. The differently colored particles each maximally adhere only to areas on the surface recorded at a wavelength specific for the particular particle type. The toner particles are varied in magnetic susceptibility as well as linear dimensions so as to adjust their maximum adherence for the particularly matched wavelength. Such a system may further include an image enhancement system to ensure that the proper toner particles are concentrated in the appropriate areas. The toner is transferred to a paper surface by both preheating the paper before transfer and heating it afterwards to fix the toner onto the paper surface.

Abstract: A display system having a cathode ray tube signal generator in which a solid state junction target utilizes a layer of semiconductor material and a layer of dielectric material to form a junction. The signal generator may be of the monoscope type in which portions of the target are masked or it may be of the photosensitive type in which an image is projected onto the target. A signal derived from the signal generator is displayed on a second cathode ray tube.

Abstract: A microwave semiconductor amplifier or oscillator system in which a semiconductor device has an avalanching region at a junction and a heat sink having a higher thermal conductivity than said avalanching region in close thermal contact with the said junction. The avalanching region has a width substantially less than ten times the thickness of said avalanching region but a length substantially greater than said width. The heat sink is made substantially wider than that of the avalanching region so that heat generated in the avalanching region during operation of the system and moving into the heat sink will have a substantial component thereof moving parallel to the junction, thereby decreasing the thermal resistance between the heat source and the heat sink and hence permitting an increased power output from the system.

Abstract: A membrane type dielectric storage target formed from a thin refractory dielectric film is stretched to form at least a one-sided surface, a first surface portion contacting a conductive wire mesh, a second surface portion having areas coated with conductive material imaging the mesh of the first surface portion. The method contemplates forming the conductive image on the second surface portion by photo-resist, decoration, and breakdown techniques.

Abstract: A semiconductor structure having a surface insulating layer formed as a grid with charges implanted in the insulating material to prevent inversion and, hence, channeling between adjacent semiconductor regions, preferably for use in nonblooming vidicon. The method of manufacturing such a structure uses ion implantation to create immobile positive charges in a grid pattern in an insulating layer in regions spaced from the interface between the insulating layer and the semiconductor body. The insulating layer is of sufficient thickness that substantially all of the charge sites in the insulating layer are separated from the outer surface of the insulator by a sufficient distance to effectively prevent a negative electric field from reaching into the silicon.

Abstract: A coupled ion laser operating at a frequency determined by the energy levels characteristic of the coupling of a lanthanide or actinide group ion with an iron group ion in an orthoaluminate material, such as yttrium orthoaluminate, is described in which low threshold high efficiency starting operation at predetermined frequencies in the region of eye safety is provided.

Abstract: A digital character generator with minimal storage requirements for use in random access display systems. Each character or symbol is made up of patterns of straight line segments called macro-strokes. Each macro-stroke in turn is made up of a predetermined number of connected portions or micro-strokes lying in a straight line. Each micro-stroke is of substantially the same length independent of the number of micro-strokes in a macro-stroke and of the directional orientation of the macrostroke. To store a character or symbol each macro-stroke is divided into its micro-strokes and the micro-strokes resolved into X and Y components. The X and Y components are stored along with the number of micro-strokes in the particular macro-stroke. Along with this information is stored the address and memory of the next macro-stroke within the character or symbol.

Abstract: A temperature compensated acoustic surface wave device, such as a surface wave delay line is provided in which temperature compensation is provided by the deposition of an interdigital electrode structure on a substrate with an overlay film surface of piezoelectric material of a predetermined thickness. A double substrate arrangement is also disclosed in which the interdigital electrode structure is deposited upon the surface of a non-piezo-electric layer which in turn is placed upon the surface of a piezoelectric substrate.

Abstract: A semiconductor integrated circuit in which accurate location of emitter contacts on diffused emitter regions is achieved by using an apertured multilayered mask on the surface of a semiconductor body through which the impurity forming the emitter region is diffused into the body from an oxidizing atmosphere such that the emitter region diffuses laterally to form junctions beyond the edges of said apertures and beneath the mask for a distance which is a function of the depth of the junctions and the coating formed during the diffusion process is removed by R.F. sputtering which removes the emitter oxide without substantially undercutting the oxide layer beneath the nitride barrier layer of the emitter mask so that the junction on the surface of the semiconductor body produced by the lateral diffusion of the emitter region remains covered by the surface passivating oxide layer. Structures having microminiature emitter areas and depths with and without preferentially etched isolation regions are disclosed.

Abstract: A signal display system having a visual display and a display signal generator in which a semiconductor junction target has a high conductivity P layer, a low conductivity N layer, and a surface layer of insulating material having holes in the shape of letters or other characters. The target semiconductor junction is reverse biased so that when an electron beam striking the target is scanned over the character apertures, it will produce carrier multiplication in the target and an output signal several orders of magnitude greater than a conventional monoscope. The same principle may be used for a camera pickup tube when beam electrons returning from a light sensitive target are multiplied on striking a reverse biased junction target.

Abstract: A microwave transistor package which will accommodate large transistor chips as well as provide sufficient space for the addition of tuning capacitors or other circuits. The lead length inside of the package is minimized. A ceramic mounting pad is brazed to an underlying copper base and a nickel aperture plate is mounted around the mounting pad. The amount of ceramic material used is much less than in prior art devices. Tuning capacitors or other devices are mounted upon the top surface nickel spacer and connected to the transistor chip. In the preferred embodiment, the entire package is hermetically sealed.

Abstract: A temperature compensated acoustic surface wave device, such as a surface wave delay line is provided in which temperature compensation is provided by the deposition of an interdigital electrode structure on a substrate with an overlay film surface of piezoelectric material of a predetermined thickness. A double substrate arrangement is also disclosed in which the interdigital electrode structure is deposited upon the surface of a non-piezoelectric layer which in turn is placed upon the surface of a piezoelectric substrate.