Abstract: An audio processor, apparatus, and method use physical speakers to emulate one or more additional speakers. The physical speakers produce sounds that, from a listener's perspective, appear to come from at least one direction where a physical speaker is not present. Any number of additional speakers can be virtualized, such as three or five speakers that allow two speakers to emulate a 5.1 audio system.

Abstract: This invention relates to a method for manufacturing electronic devices integrated monolithically in a semiconductor substrate delimited by two opposed front and back surfaces of a semiconductor material wafer. The method comprises at least a step of implanting ions of a noble gas, followed by a thermal treatment directed to form gettering microvoids in the semiconductor by evaporation of the gas. The ion implanting step is carried out through the back surface of the semiconductor wafer prior to starting the manufacturing process for the electronic devices, and also can be before the step of cleaning the front surface of the wafer.

Abstract: A sensor with a movable microstructure including a sensitive element, formed in a first chip of semiconductor material for producing an electrical signal dependent on a movement of at least one movable microstructure relative to a surface of the first chip. The sensitive element is enclosed in a hollow hermetic structure, and circuitry for processing the electrical signal is formed in a second chip of semiconductor material. The hollow hermetic structure includes a metal wall disposed on the surface of the first chip around the sensitive element, and the second chip is fixed to the metal wall.

Abstract: A processor is provided with a set of instructions formed in general, of an operation section and an operand section. For a special control instruction, the operand section is transmitted to the operation blocks along a bypass path separate from the normal path in which normal instructions are interpreted. In this way, an extension of the set of instructions can be achieved for tailoring the set of instructions to the user's own requirements. Consequently, the processor control unit should be capable of coupling its outputs to its inputs upon receiving one such instruction, thereby to transfer such internal operation control signals without interpretation.

Abstract: An error processing circuit for a receiving location of a system for transferring binary data in the form of pulse sequences, wherein the system has a number of receiving locations connected via a double-line bus having a first line and a second line. The circuit includes a data output, a decoder having three decoder outputs, of which a first decoder output associated with both lines delivers a first decoder output signal dependent on the difference between the potential values of both lines, a second decoder output associated with the first line delivers a second decoder output signal dependent on the difference between the potential value of the first line and a first mean potential value, and a third decoder output associated with the second line delivers a third decoder output signal dependent on the difference between the potential value of the second line and a second mean potential value.

Abstract: A DC-DC converter having a current error amplifier and a voltage error amplifier connected in parallel to control the charging of the battery and a gradual turning off circuit for turning off gradually the current error amplifier in a battery charging end phase. In this way, the DC-DC converter is able to supply to the battery a battery charging current that remains constant until the battery full charge voltage is reached.

Abstract: A process for manufacturing electronic semiconductor integrated memory devices having a virtual ground and comprising at least a matrix of floating gate memory cells is presented. In the memory device, the matrix is formed on a semiconductor substrate with a number of continuous bit lines extending across the substrate as discrete parallel strips. The process begins by growing an oxide layer over the matrix region and depositing over the semiconductor throughout a stack structure which comprises a first conductor layer, a first dielectric layer, and a second conductor layer. Then a second dielectric layer is deposited over the stack structure, and floating gate regions are defined by photolithography using a mask of “POLY1 along a first direction”, to thereby define in the dielectric layer, a plurality of parallel strips which delimit a first dimension of floating gate regions.

Abstract: Presented is a ferroelectric non-volatile memory cell in a semiconductor substrate that has a MOS device connected in parallel to a ferroelectric capacitor. The MOS device has first and second conduction terminals and is covered with an insulating layer. The ferroelectric capacitor has a lower electrode formed on the insulating layer above the first conduction terminals and are electrically coupled to them. The lower electrode of the ferroelectric capacitor is covered with a layer of ferroelectric material and coupled capacitively to an upper electrode. The upper electrode is formed above the second conduction terminals and are electrically connected thereto, and extends over the ferroelectric material to at least partially overlap the lower electrode. Also presented is a non-volatile memory matrix that includes a plurality of the ferroelectric memory cells that are organized into rows and columns.

Abstract: A process for manufacturing a SOI wafer with buried oxide regions without cusps that includes forming, in a wafer of monocrystalline semiconductor material, trenches extending between, and delimiting laterally, protruding regions; forming masking regions, implanted with nitrogen ions, the masking regions surrounding completely the tips of the protruding regions; and forming retarding regions on the bottom of the trenches, wherein nitrogen is implanted at a lower dose than the masking regions. A thermal oxidation is then carried out and starts at the bottom portion of the protruding regions and then proceeds downwards; thereby, a continuous region of buried oxide is formed and is overlaid by non-oxidized regions corresponding to the tips of the protruding regions and forming nucleus regions for a subsequent epitaxial growth.

Abstract: To reduce the risk of breakage of the moving parts of an integrated microstructure during manufacture steps causing mechanical stresses to the moving parts, a temporary immobilization and support structure is formed, whereby a moving region of the microstructure is temporarily integral with the fixed region. The temporary structure is removed at the end of the assembly operations by non-mechanical removal methods. According to one solution, the temporary structure is formed by a fusible element removed by melting or evaporation, by applying a sufficient quantity of energy thereto. Alternatively, a structural region of polymer material is formed in the trench separating the moving part from the fixed part, or an adhesive material layer sensitive to ultraviolet radiation is applied.

Abstract: Presented is a low-voltage automatic lock-up biasing circuit with input terminals that accept input voltages, and with an internal node coupled to both input terminals an which takes take the highest of the voltage values applied to the input terminals. This circuit uses a comparator having respective inputs connected to the input terminals and with an output connected to a level shifter. Outputs of the level shifter are coupled to respective enable elements connected between each input terminal and the internal node. The enable elements are driven each by a respective output of the level shifter.

Abstract: A flash EEPROM memory cell comprises source and drain regions defining a channel region therebetween, a floating gate and a control gate. The source and drain regions are first and second doped semiconductor regions of a first conductivity type formed in a first active area region of a semiconductor material layer of a second conductivity type; the control gate comprises a third doped semiconductor region of the first conductivity type formed in a second active area region of the semiconductor material layer; and the floating gate comprises a polysilicon strip insulatively disposed over the channel region and insulatively extending over the third doped semiconductor region.

Abstract: A method of and a circuit arrangement for data transfer between a master means and slave means, in which bit sequences are transferred each having an address field for addressing the respective slave means to be controlled, a control field for control information, and a data field. The data bit number of the data field may be different depending on the addressed slave means. The bit sequences transmitted from the master means are read back directly to the master means, so that the occurrence of corrupt bits in the bit sequence is recognized and a transfer of the bit sequence recognized as corrupt to the addressed slave means can be prevented.

Abstract: The invention relates to a Class AB operational amplifier providing both output gain enhancement and adaptative output bias. The operational amplifier includes first and second output terminals; a main differential stage having first and second differential inputs and a first differential output stage; a first adaptatively biased, boosted output stage coupling the first differential output stage to the output terminal. Each output stage includes a first NMOS output transistor having a control terminal, a first terminal coupled to the respective output terminal, and a second terminal, and includes a first output amplifier having a first input coupled to the second terminal of the first output transistor, a second input coupled to the first differential output stage to provide adaptative bias for the first boosted output stage, and an output coupled to the control terminal of the first output transistor.

Abstract: The memory array comprises a plurality of cells, grouped together in sectors and arranged in sector rows and columns, and has both hierarchical row decoding and hierarchical column decoding. Global word lines are connected to at least two word lines in each sector, through local row decoders; global bit lines are connected to at least two local bit lines in each sector, through local column decoders. The global column decoder is arranged in the center of the memory array, and separates from each other an upper half and a lower half of the memory array. Sense amplifiers are also arranged in the middle of the array, thus saving space. This architecture also provides lesser stress of the cells, better reliability, and better production performance. In addition, each sector is completely disconnected from the remaining sectors, and only the faulty row or column of a single sector should be doubled.

Abstract: An OTP memory integrated circuit in CMOS technology, including at least two oxide capacitors forming a differential reading storage element, and a read and programming circuit in which the transistors of a first conductivity type are adapted to being used both during read cycles under a relatively low voltage and during programming cycles under a relatively high voltage.

Abstract: Method of fabrication of a no-field transistor with no extra process costs, providing for defining an active area for the transistor surrounded by a thick field oxide layer, insulatively placing a polysilicon gate electrode across the active area to define source/drain regions of the no-field transistor, providing an implant protection mask over a boundary between at least one of the source/drain regions and the field oxide layer, selectively implanting in said source/drain regions a relatively heavy dose of dopants to form relatively heavily doped source/drain regions and to simultaneously dope the polysilicon gate electrode, the polysilicon gate electrode formed with lateral wings extending towards the at least one source/drain region, and the implant protection mask extending over the lateral wings but not over the polysilicon gate.

Abstract: The manufacturing method comprises, in sequence, the steps of: depositing an upper layer of polycrystalline silicon; defining the upper layer, obtaining LV gate regions of low voltage transistors and undefined portions; forming LV source and drain regions laterally to the LV gate regions; forming a layer of silicide on the LV source and drain regions, on the LV gate regions, and on the undefined portions; defining stack gate regions and HV gate regions of high-voltage transistors; and forming HV source and drain regions and cell regions.

Abstract: An inductive load is controlled using a PWM control signal at the control terminal of a current switch. In parallel to the first circuit branch containing the inductive load to be controlled, there is located a second circuit branch including a flyback diode and a measuring resistor. The actual current signal corresponding to the current in the inductive load to be regulated, which is formed using the current in the measuring resistor as measurement voltage, is compared to a desired current signal, and the result of the comparison is processed by a PWM circuit to form a PWM control signal for current switch. Due to the fact that measuring resistor is disposed in the circuit parallel to the inductive load to be controlled, a favorable behavior of the power dissipation in the measuring resistor is obtained in accordance with the duty cycle of the PWM control signal. With a preset value of the measuring resistor, the power dissipation and the required chip area can thus be reduced.

Abstract: A method for autoaligning lines of a conductive material in circuits integrated on a semiconductor substrate is presented. The method includes forming several regions projecting from the substrate surface and aligned to one another, and forming a fill layer in the gaps between the projecting regions. The fill layer is planarized to expose the regions, and a portion of the regions is removed to form holes at the locations of the regions. Next an insulating layer is formed in the holes. The insulating layer is selectively removed to form spacers along the edges of said holes and at least one conductive layer is deposited over the exposed surface. Later, a step of photolithograpy with a mask is performed and the conductive layer is etched to define lines and collimate them to the underlying regions.