Abstract: A multi-domain liquid crystal display device comprises first and second substrates facing each other and a liquid crystal layer between the first and second substrates. A plurality of gate bus lines are arranged in a first direction on the first substrate and a plurality of data bus lines are arranged in a second direction on the first substrate to define a pixel region. A pixel electrode electrically is charged through the data bus line in the pixel region, a color filter layer is formed on the second substrate, and a common electrode is formed on the color filter layer. Dielectric frames are formed in the pixel region, and an alignment layer on at least one substrate between the first and second substrates.

Abstract: A method of fabricating a thin film transistor with a silicon film crystallized by sequential lateral solidification including depositing an amorphous silicon film on an insulating substrate, selectively doping the amorphous silicon film with impuities, crystalizing the amorphous silicon film doped selectively with the impurities by sequential lateral solidification, forming an active layer of which doped portions become source and drain regions by patterning the silicon film crystalized by sequential lateral solidification, and forming a gate insulating layer and a gate electrode on the active layer.

Abstract: A liquid crystal display according to the present invention uses an organic layer treated with H2 plasma before fabricating an inorganic layer on the top of the organic layer. When forming thin film transistors (TFT) used in the LCD, an Indium Tin Oxide layer is fabricated above the TFTs and acts as a pixel electrode. When the organic layer, such as a passivation layer, is treated with the H2 plasma, an intermediate layer having an O—H bonding structure is formed to enhance bonding or attachment of an inorganic layer, such as an ITO layer, to the organic layer.

Abstract: A semiconductor device includes a substrate and a first layer of a first conductive material on the substrate, the first layer having a first etching rate. A second layer of a second conductive material has a first hole on a portion of the first layer, the second layer having a second etching rate higher than the first etching rate. A third layer includes a combination of the first and second layers between the first and the second layers, the third layer having a third etching rate lower than the second etching rate. An insulating layer has a second hole on the third layer, the insulating layer having a fourth etching rate higher than the first etching rate. A transparent conductive layer is on the third layer through the first and second holes.

Abstract: The present invention discloses a method of manufacturing a polycrystalline silicon thin film transistor including forming a buffer layer on a substrate; depositing an impurity-doped amorphous silicon layer on the buffer layer and patterning the impurity-doped amorphous silicon layer into source and drain regions, where the source and drain regions are spaced apart from each other; forming a metal layer over the entire substrate while covering the source and drain regions; depositing an intrinsic amorphous silicon layer on the metal layer; applying a voltage to the intrinsic amorphous silicon layer to simultaneously crystallize the intrinsic amorphous silicon layer and the source and drain regions so that the intrinsic amorphous silicon layer is converted into a polycrystalline silicon layer; and patterning the polycrystalline silicon layer to form an active layer so that part of the polycrystalline silicon layer overlaps the source and drain regions.

Abstract: A liquid crystal display device includes first and second substrates, a plurality of gate bus lines and data bus lines on the first substrate, the gate bus lines being perpendicular to the data bus lines, a plurality of pixels defined by the gate bus lines and the data bus lines, the pixels having a plularity of regions, at least a pair of electrodes in each region having a common direction, and a plurality of liquid crystal molecules between the substrates.

Abstract: A liquid crystal panel driving method and apparatus of cycle inversion system is adapted to stably keep a picture quality independently of a pattern of picture and improves a picture quality. In the apparatus, liquid crystal cells in the liquid crystal panel are divided into a number of polarity blocks. The same polarities of data signals are applied to the liquid crystal cells included in each polarity block, data signals having polarities different from the adjacent polarity blocks to each polarity block. The number of liquid crystal cells included in each of the number of polarity blocks are gradually increased every predetermined number of frame period.

Abstract: A channel monitoring apparatus in a WDM system comprises: a plurality of tap couplers each for tapping a multiplexed optical signal at a predetermined percent at each monitoring point; an optical switch for selecting one of the monitoring points and optically switching an optical signal tapped by a relevant one of the tap couplers; an AWG module for dividing the optical signal switched by the switch by channels of the WDM system; a plurality of optical detectors for converting signals received from the AWG module into electric signals; a plurality of trans-impedance circuits for converting the electric signals converted by the detectors into voltage values proportional to current values of the signals; a channel multiplexer for selecting one of signals converted by the trans-impedance circuits; a fourth amplifier for amplifying the signal selected by the channel multiplexer; an analog/digital converter for converting the signal amplified by the fourth amplifier into a digital signal before applying it to a mi

Abstract: A 4-mask method of manufacturing an array substrate. First and second masks form a gate line, a gate pad, a data line and a data pad. The data line has a protrusion near a crossing of the gate and data lines. A third mask forms a transparent electrode layer, a source electrode, a drain electrode, a pixel electrode, and exposes channel area. The transparent electrode layer has a similar shape as the data line and the data pad, but a smaller area than the data line and a greater area than the data pad. A second insulating layer is formed over the structure. A fourth mask patterns the second insulating layer to cover the gate line and the gate pad, the first and second insulating layer are patterned to form a gate pad contact hole, and the first insulating layer between the data line and the pixel electrode is patterned.

Abstract: A liquid crystal display case surrounds the liquid crystal display device by a frame and top case. The top case has a hooking plate extended inwardly from the top end of the front wall in the perpendicular direction. The frame is engaged with the top case by being inserted under the hooking plate so that the frame is combined with the liquid crystal display device.

Abstract: A method for forming a polycrystalline silicon layer for TFT according to the present invention includes steps of: depositing an amorphous silicon layer and a silicon oxidation layer on a substrate in this order; and implanting semiconductor ions into the amorphous silicon layer and the silicon oxidation layer while heating the substrate, thereby converting the amorphous silicon layer into a polycrystalline silicon layer, and forming an amorphous oxidation layer between the amorphous silicon layer and the silicon oxidation layer.

Abstract: A shift register that is suitable for reducing the required number of clock signals as well as simplifying the configuration of an external control circuit uses a plurality of stages connected, in series, to a start pulse input line. In each stage, an output circuit responds to a first control signal to apply any one of first and second clock signals to a row line of a liquid crystal cell array and thus to charge the low line of the liquid crystal cell array, and responds to a second control signal to discharge a voltage at the row line. An output circuit responds to a clock signal different from any one of the start pulse and an output signal of the previous stage to generate the first control signal, and responds to a clock signal different from the first control signal to generate the second control signal.

Abstract: The present invention relates to a thin film transistor (TFT), liquid crystal display (LCD) and fabricating methods thereof, and more particularly to a TFT having source/drain lines on which an insulating layer and an active layer are located lie on an insulated substrate, to an LCD using the TFT and fabricating methods of the TFT and LCD. The TFT has a BBC (Buried Bus Coplanar) structure by forming a source/drain line on a substrate and by forming a buffer layer which covers the source/drain line which simplifies the process by means of reducing the number of deposition steps. The BBC structure of TFT has a source/drain line on a substrate, an insulating layer covering the source/drain line and the entire disclosed surface and a coplanar structure on the insulating layer. The present invention also provides a data line in the TFT of the BBC structure having low resistance applicable to a wide-screen by means of forming both the buffer layer and the source/drain line with a sufficient thickness.

Abstract: The present invention discloses a method of manufacturing a liquid crystal display device including a first photolithography process forming a gate electrode on a substrate; a second photolithography process including: a) depositing sequentially a gate insulating layer, first and second semiconductor layers, and a metal layer; b) applying a first photoresist on the metal layer; c) aligning a first photo mask with the substrate; d) light exposing and developing the first photoresist to produce a first photoresist pattern; e) etching the metal layer using a first etchant, the first etchant ashing the first photoresist pattern on a predetermined portion of the metal layer to produce a second photoresist pattern, thereby exposing the predetermined portion of the metal layer; and f) etching the gate insulating layer, the first and second semiconductor layer, and the predetermined portion of the metal layer using a second etchant according to the second photoresist pattern to form source and drain electrodes, an oh

Abstract: The present method of forming a silicon oxide layer comprises providing two frequency excitation plasma CVD device which comprises a high frequency electrode, a susceptor electrode, and two matching box for impedance matching between the electrodes and a power supply, wherein one side electrode constituting a tuning condenser of a matching box toward the high frequency electrode is the high frequency electrode; placing a substrate on the susceptor electrode; applying high frequency electric power on the high frequency electrode and the susceptor electrode respectively; and forming a silicon oxide layer on the substrate by generating plasma with using a reaction gas of which main reaction gas is a mixing gas of monosilane and nitrous oxide.

Abstract: A liquid crystal display (LCD) panel having electrostatic discharge (ESD) prevention circuitry. The LCD panel includes a plurality of gate lines connected to a gate driving circuit and a plurality of data lines connected to a data driving circuit, the gate lines and the data lines intersect to define a pixel array. The LCD panel further comprises a plurality of ESD prevention circuits each having at least one switching device and at least one control terminal connected to the switching device, each ESD prevention circuit connected between an end of a gate or data line and a common wire. The ends of the gate and data lines are thereby coupled in common by the common wire. The switching device is turned on by electrostatic voltages generated at the gate and/or data lines during LCD panel fabrication, and is turned off by control signals applied at the control terminal during panel testing and normal operation.

Abstract: A liquid crystal panel driving apparatus is adaptive for stably keeping a picture quality independently of a picture pattern and improving a picture quality. In the apparatus, the liquid crystal panel arranged with liquid crystal cells is divided into a number of polarity blocks. Each one of the liquid crystal cells included in each block responds to data signals having polarities contrary to data signals applied to the adjacent liquid crystal cells and responds to data signals having polarities contrary to data signals applied to the liquid crystal cells included in the adjacent blocks. The polarities of data signals applied to all the liquid crystal cells in the liquid crystal panel are inverted every frame interval.

Abstract: A multi-domain liquid crystal display device includes first and second substrates facing each other and a liquid crystal layer between the first and second substrates. A plurality of gate bus lines are arranged in a first direction on the first substrate and a plurality of data bus lines are arranged in a second direction on the first substrate to define a pixel region. A common electrode is formed on the second substrate and a pixel electrode is electrically charged through the data bus line to drive the liquid crystal layer with the common electrode. An auxiliary electrode is formed on a same layer whereon the pixel electrode is formed. A passivation is formed below the pixel and auxiliary electrodes to insulate them from other electrodes and bus lines. An alignment layer is on at least one substrate between the first and second substrates.

Abstract: An in-plane switching mode liquid crystal display device. The device coprises first and second substrates, a plurality of gate and data bus lines formed on the first substrate to define a plurality of pixel regions, a common bus line aligned in each pixel regions of the first substrate, a thin film transistor (TFT) formed at each pixel regions of the first substrate, a data electrode which is formed on a gate insulator of the TFT and has a portion overlying the common bus line for forming a first storage capacitor, a passivation layer formed over the data electrode and the TFT, a common electrode which is formed on the passivation layer so as to overlap the gate and data bus lines and has a portion overlying the data electrode for forming a second storage capacitor, and a liquid crystal layer formed between the first and second substrates.

Abstract: The present invention relates to a laser annealing apparatus having a plurality of optical systems to generate a plurality of laser beams. A process time is reduced because a laser scanning operation on a large substrate is completed in a shorter time. The present invention includes a laser oscillator generating and supplying a laser, at least one beam splitter separating the laser from the laser oscillator into at least one or more laser beam, a plurality of optical systems processing a laser beam to produce laser having energy and profile sufficient to use directly for sample irradiation. The optical systems arrange each processed laser beam to a length direction.