Abstract: A rush current preventing circuit for a liquid crystal display that is suitable for eliminating a rush current at the time of applying an initial power to the liquid crystal display includes an output enable signal generator generating an output enable signal to control outputs of the gate drive integrated circuits. A start output enable signal generator generates a start output enable signal having at least a desired interval of disable pulse at the time of applying an initial power. An output enable signal switching device switches the output enable signal and the start output enable signal in accordance with the start output enable signal.

Abstract: A data transmission apparatus a data transmitter selectively inverting data and transmitting the selectively inverted data. A data receiver selectively re-inverts the selectively inverted data from the data transmitter and reconstructs the inverted data into the original data. The inversion operation of the data transmitter and the data receiver is controlled by a mode controller. The mode controller receives data having a number of bits along with a clock signal to detect a number of transitions every period of the clock signal, and controls driving modes of the data transmitter and the data receiver in accordance with the detected number of transitions.

Abstract: A method of manufacturing a liquid crystal display includes the steps of forming a gate electrode including a first metal on a substrate. A gate insulation layer is formed on the substrate having the gate electrode and a semiconductor layer is formed on the gate insulation layer covering the gate electrode. A source electrode contacting one side of the semiconductor layer, a drain electrode contacting the other side of the semiconductor layer using a second metal are formed. A passivation layer is formed on the substrate having the source electrode. A drain contact hole is formed by patterning some portion of the passivation layer and the drain electrode. The drain electrode has an etched side wall. A pixel electrode is formed contacting the etched side wall of the drain electrode using a conductive material.

Abstract: Disclosed is a portable computer which includes a display panel having a front surface, a plurality of side surfaces and a bottom surface, the front surface including a display area; an upper supporting frame covering an edge or peripheral region of the display area of the display panel; a lower supporting frame supporting the bottom of the display panel and contacting the bottom surface; and a fastening unit having a main portion and a bent portion vertical to the main frame, the main portion secured to the lower supporting frame, the bent portion contacting the side surface, and having a screw hole. Using the fastening unit according to the invention, there are described advantages that the lower supporting frame is firmly supported and the side mounting method can be applied to a thin liquid crystal display device regardless of a thickness of the lower supporting frame.

Abstract: A method of crystallizing an amorphous film includes the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a metal layer; and crystallizing the amorphous film by forming an electric field in the amorphous film and the metal layer, while simultaneously subjecting the amorphous film and the metal layer to a thermal treatment, thereby crystallizing the amorphous film.

Abstract: A liquid crystal display device includes first and second gate lines, first and second data lines intersecting said first and second gate lines, an insulating film covering said gate lines, and a pixel electrode overlapping the first and second gate lines and the first and second data lines in order to increase the aperture ratio. The storage capacitor has a first storage capacitor electrode which is a portion of the first gate line, a second storage capacitor electrode a width of which is substantially same as that of the gate lines, the insulating film between the first and second storage capacitor electrodes, and a protecting film having a contact hole on the second storage capacitor electrode. The pixel electrode contacts the second storage capacitor electrode through the contact hole of the protecting film.

Abstract: A liquid crystal display array panel includes a substrate, a plurality of gate lines on the substrate, a plurality of data lines on the substrate, an active display region having a plurality of pixels defined by the plurality of gate lines and data lines, and at least two repair lines partially positioned on the active display region and separated from each other. The repair lines crossing some of the plurality of gate lines and all the data lines.

Abstract: An active layer commonly used in a thin-film-transistor is made by irradiating an amorphous silicon layer with a laser source at an energy density sufficient to induce substantially complete melting to form a melted region and an unmelted region. The melted region of the amorphous silicon layer is solidified with a lateral grain growth from the unmelted region to the melted region. Then the amorphous silicon layer is translated relative to the laser source. In such an apparatus, the laser source is prepared by emitting a laser beam through a mask. The mask has a plurality of transparent regions which comprises slits arranged adjacent to or next to each other and separated by a predetermined distance in certain applications. Such pattern includes contiguous chevron-shaped lines with curved apexes. Alternatively, the pattern also includes slim rectangular apertures.

Abstract: A liquid crystal display including: a first transparent substrate coated with a first alignment layer, a second transparent substrate coated with a second alignment layer, the second substrate facing the first transparent substrate, a liquid crystal layer between the substrates, a polarizer attached on the outer surfaces of the substrates, a pair of electrodes formed on the first substrates, and a driving circuit applying signal voltage to the electrodes. The liquid crystal molecules adjacent to the first substrate is rotated by applying the voltage, but, the liquid crystal molecule adjacent to the second substrate is fixed regardless of the applied voltage. The electrode pair, substantially straight data and common electrodes, are inclined at an angle with respect to a gate line.

Abstract: A laser annealing apparatus has a laser generating section for producing a laser beam, a splitter arranged to partially reflect and partially transmit the laser beam. The apparatus has a first energy converting section for measuring the energy value of the laser beam reflected from the splitter and outputting it into an electrical signal and has an energy control section for comparing the output signal of the first energy converting section to a reference value and automatically correcting the energy value by the difference between them. A process window may be positioned so the laser beam can pass through a built-in slit for annelaing a substrate. The apparatus further has a second energy converting section for measuring the energy value of the laser beam passing through the process window. In response to the output of the second energy converting section, the energy control section corrects the energy intensity of the laser beam.

Abstract: A driving circuit for driving a liquid crystal display is provided. The driving circuit includes a clock generator processing a first clock signal to output a second clock signal, the clock speed of the second clock signal being half of that of the first clock signal, a memory for storing a first video data and a second video data in accordance with the first clock signal, and a data controller for simultaneously outputting the first video data and the second video data stored in the memory in accordance with the second clock signal.

Abstract: A liquid crystal display device having an electrode structure capable of easily curing a sealant. In the device, at least one of signal wiring is arranged on a substrate provided with liquid crystal injection holes. The signal wiring has a shape curved at an inflow position of the sealant. The signal wiring to be arranged at the inflow position of the sealant is formed to depart from the inflow position or is partially removed.

Abstract: A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant &egr; (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 &mgr;m) of the insulating layer reduce the pixel electrode-address line parasitic capacitance CPL in the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.

Abstract: A bus compression apparatus for compressing data is provided to suppress an EMI signal and to simplify a data bus structure. In the apparatus, the voltage levels of the digital output signals are summed in accordance with the resistance values of the data compression circuit to produce a compressed analog signal. The compressed analog signal is transmitted through a bus lines to a data decompressor which reproduces the digital data in response to the voltage levels of the compressed analog signal.

Abstract: A laser annealing method for crystallizing a silicon film includes preparing a laser beam having a width smaller than a predetermined width that is two times longer than a silicon grain grown by a single shot of the laser beam in which energy of the laser beam is determined to melt down a silicon film completely, carrying out a first laser beam irradiation on the silicon film with the laser beam to grow silicon grains, displacing the laser beam on the silicon film by an overlap ratio under ½ of the width of the laser beam, and carrying out a second laser beam irradiation on the silicon film with the laser beam to grow the silicon grains again.

Abstract: The present invention relates to a thin film transistor and a fabricating method thereof which improve device characteristics by forming a substance layer such as a vacuum layer or an air layer, which has a remarkable characteristic of insulation, on an active layer. The present invention includes an insulated substrate, an active layer on the insulated substrate wherein the active layer has a source region, a channel region and a drain region, a gate insulating layer having an inner space on the channel region, and a gate electrode on the gate insulating layer over the channel region. And, the present invention includes the steps of forming an active layer on an insulated substrate, forming a gate insulating layer having an inner space on the active layer, forming a gate electrode on the gate insulating layer, and forming a source region and a drain region in the active layer by doping the substrate including the active layer with impurities.

Abstract: A liquid crystal display including: a first transparent substrate coated with a first alignment layer, a second transparent substrate coated with a second alignment layer, the second substrate facing the first transparent substrate, a liquid crystal layer between the substrates, a polarizer attached on the outer surfaces of the substrates, a pair of electrodes formed on the first substrates, and a driving circuit applying signal voltage to the electrodes. The liquid crystal molecules adjacent to the first substrate is rotated by applying the voltage, but, the liquid crystal molecule adjacent to the second substrate is fixed regardless of the applied voltage. The electrode pair, substantially straight data and common electrodes, are inclined at an angle with respect to a gate line.

Abstract: The present invention relates to a method of crystallizing an amorphous silicon layer which is carried out by depositing a crystallization-inducing substance on an amorphous silicon layer on crystallizing the amorphous silicon layer by metal-induced crystallization whereby speed of crystallizing silicon is increased and metal contamination by MIC is reduced. The present invention includes the steps of depositing a crystallizing-induced layer of an induced substance for crystallizing silicon on an amorphous silicon layer wherein the crystallizing induced layer is formed to the thickness under 0.03 angstroms, and treating thermally the amorphous silicon layer on which the crystallizing-induced layer is deposited.

Abstract: A method of crystallizing an amorphous film comprises the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a Co thin film, and crystallizing the amorphous film by forming and electric field in the amorphous film and the Co thin film, while simultaneously subjecting the amorphous film and the Co thin film to a thermal treatment, thereby crystallizing the amorphous film.

Abstract: The present invention discloses a method of manufacturing a thin film transistor, including: depositing an amorphous silicon layer, an insulating layer, and a gate metal layer on a substrate sequentially; patterning the insulating layer and the gate metal layer to form a gate insulating layer and a gate electrode; treating an impurity and a catalyst metal on the amorphous silicon layer using the gate electrode as a mask; and applying a DC voltage to both terminals of the amorphous silicon layer to form a polysilicon layer, the polysilicon layer having source and drain regions and an active area.