Patents Represented by Attorney, Agent or Law Firm Marian Underweiser, Esq.
  • Patent number: 6803972
    Abstract: A class of novel structures which make novel use of polymer based reflective polarizing films in an improved polarization conversion system which are useful in liquid crystal projection systems that are easily manufactured, of lower cost, and permit the versatility of higher numerical aperture polarization conversions. Another aspect of the present invention are polarization modulating liquid crystal projection display systems utilizing the polarization conversion systems of the present invention.
    Type: Grant
    Filed: November 20, 1997
    Date of Patent: October 12, 2004
    Assignee: International Business Machines Corporation
    Inventors: Russell Alan Budd, Derek Brian Dove, Rama Nand Singh
  • Patent number: 6756324
    Abstract: A thin film transistor is described incorporating a gate electrode, a gate insulating layer, a semiconducting channel layer deposited on top of the gate insulating layer, an insulating encapsulation layer positioned on the channel layer, a source electrode, a drain electrode and a contact layer beneath each of the source and drain electrodes and in contact with at least the channel layer, all of which are situated on a plastic substrate. By enabling the use of plastics having low glass transition temperatures as substrates, the thin film transistors may be used in large area electronics such as information displays and light sensitive arrays for imaging which are flexible, lighter in weight and more impact resistant than displays fabricated on traditional glass substrates. The thin film transistors are useful in active matrix liquid crystal displays where the plastic substrates are transparent in the visible spectrum.
    Type: Grant
    Filed: March 25, 1997
    Date of Patent: June 29, 2004
    Assignee: International Business Machines Corporation
    Inventor: Stephen McConnell Gates
  • Patent number: 6676729
    Abstract: A method for making nanoparticles via metal salt reduction comprises, first, mixing metal salts in a solvent. Second, a reducing agent is added to the solvent at a temperature in the range of 100° C. to 350° C. Third, the nanoparticles dispersion is stabilized. Fourth, the nanoparticles are precipitated from the nanoparticle dispersion. Finally, the nanoparticles are re-dispersed into the solvent. The metal salt comprises a combination of FeCl2, FeCl3, Fe(OOCR)2, Fe(RCOCHCOR)3, CoCl2, Co(OOCR)2, Co(RCOCHCOR)2, and one of Pt(RCOCHCOR)2, PtCl2. The reducing agent comprises one of MBR3H, MH, M naphthalides, and polyalcohol; wherein R comprises one of H and an alkyl group, wherein M comprises one of Li, Na, and K. Long chain alkyl diols, and alkyl alcohol, can be used as a co-surfactant or a co-reducing agent to facilitate nanoparticle growth and separation.
    Type: Grant
    Filed: January 2, 2002
    Date of Patent: January 13, 2004
    Assignee: International Business Machines Corporation
    Inventor: Shouheng Sun
  • Patent number: 6650313
    Abstract: Assistive motion data processing and/or button data processing is performed in an adapter on user inputted variable data produced by a pointing device prior to communication to a computer. This processing may include one or more of processing to filter coordinate deviations from a desired path caused by unintended movements of the pointing device; removal of unintentional rapid button transitions of the pointing device; look-back processing to correct for unintentional pointer coordinate motion induced by operation of buttons on the pointing device; and detection of button double-clicks using relaxed requirements on motion and timing. The adapter's processing is transparent to the computer. Provision for user input of selected parameters is provided, as well as switching to allow for user deactivation of the adapter for conventional use of the pointing device.
    Type: Grant
    Filed: April 26, 2001
    Date of Patent: November 18, 2003
    Assignee: International Business Machines Corporation
    Inventors: James Lewis Levine, Michael Alan Schappert
  • Patent number: 6649929
    Abstract: A method and structure for a d-wave qubit structure includes a qubit disk formed at a multi-crystal junction (or qubit ring) and a superconducting screening structure surrounding the qubit. The structure may also include a superconducting sensing loop, where the superconducting sensing loop comprises an s-wave superconducting ring. The structure may also include a superconducting field effect transistor.
    Type: Grant
    Filed: May 16, 2002
    Date of Patent: November 18, 2003
    Assignee: International Business Machines Corporation
    Inventors: Dennis M. Newns, Chang C. Tsuei
  • Patent number: 6620657
    Abstract: A structure and method of forming a fully planarized polymer thin-film transistor by using a first planar carrier to process a first portion of the device including gate, source, drain and body elements. Preferably, the thin-film transistors made with all organic materials. The gate dielectric can be a high-k polymer to boost the device performance. Then, the partially-finished device structures are flipped upside-down and transferred to a second planar carrier. A layer of wax or photo-sensitive organic material is then applied, and can be used as the temporary glue. The device, including its body area, is then defined by an etching process. Contacts to the devices are formed by conductive material deposition and chemical-mechanical polish.
    Type: Grant
    Filed: January 15, 2002
    Date of Patent: September 16, 2003
    Assignee: International Business Machines Corporation
    Inventors: Tricia L. Breen, Lawrence A. Clevenger, Louis L. Hsu, Li-Kong Wang, Kwong Hon Wong
  • Patent number: 6590750
    Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.
    Type: Grant
    Filed: February 10, 1998
    Date of Patent: July 8, 2003
    Assignee: International Business Machines Corporation
    Inventors: David William Abraham, Philip Edward Batson, John Slonczewski, Philip Louis Trouilloud, William Joseph Gallagher, Stuart Parkin
  • Patent number: 6573957
    Abstract: It is an object of the present invention to provide the liquid crystal display (LCD) device with a structure which can prevent the light of a back light from being passing through a bonding region, and can prevent the TFTs of the pixel regions from being damaged by the accumulated electrostatic charges, during the handling of each discrete LCD panel, the rubbing process of the alignment layer on the lower glass substrate 1, the assembling process of the LCD panels, and the handling of the completed tiling panel. The present invention is directed to a LCD device comprising a first LCD panel and a second LCD panel; wherein one edge of the first LCD panel is positioned in proximity and adjacent to one edge of the second LCD panel; and wherein a light shielding and electrically conductive adhesive bonds the one edge of the first LCD panel and the one edge of the second LCD panel.
    Type: Grant
    Filed: July 6, 2000
    Date of Patent: June 3, 2003
    Assignee: International Business Machines Corporation
    Inventor: Shunji Suzuki
  • Patent number: 6566665
    Abstract: The invention provides a method and related apparatus to link and/or pattern self-assembled first objects to a second object. Each of the first object (e.g., a nanoparticle) can be embedded in a mobile binder (i.e., a stabilizer). The invention applies energy to the first object and stabilizer, links this first object to the second object, and provides a controlled linkage of the first object with respect to the second object. Applying this procedure to many such objects results in a larger areal arrangement of these linked objects. An appropriate solvent may be used to remove non-linked objects, yielding a patterned array. Thermal annealing can be applied to control the physical and chemical properties of the array.
    Type: Grant
    Filed: August 17, 2001
    Date of Patent: May 20, 2003
    Assignee: International Business Machines Corporation
    Inventors: John E. E. Baglin, Hendrik F. Hamann, Shouheng Sun
  • Patent number: 6563160
    Abstract: A method and structure for an improved DRAM (dynamic random access memory) dielectric structure, whereby a new high-k material is implemented for both the support devices used as the gate dielectric as well as the capacitor dielectric. The method forms both deep isolated trench regions used for capacitor devices, and shallow isolated trench regions for support devices. The method also forms two different insulator layers, where one insulator layer with a uniform high-k dielectric constant is used for the deep trench regions and the support regions. The other insulator layer is used in the array regions in between the shallow trench regions.
    Type: Grant
    Filed: August 9, 2001
    Date of Patent: May 13, 2003
    Assignee: International Business Machines Corporation
    Inventors: Lawrence A. Clevenger, Louis L. Hsu, Carl J. Radens, Joseph F. Shepard, Jr.
  • Patent number: 6555393
    Abstract: A structure and method of forming an integrated circuit (e.g., field effect transistor) having a buried Mott-insulated oxide channel includes depositing source and drain electrodes over a substrate forming a Mott transition channel layer over the substrate and electrodes, forming an insulator layer over the Mott transition channel layer, forming source and drain contacts through the insulator layer (such that the source and drain contacts are electrically connected to the Mott transition channel layer) and forming a gate electrode over the insulator layer between the source and drain contacts.
    Type: Grant
    Filed: August 24, 2001
    Date of Patent: April 29, 2003
    Assignee: International Business Machines Corporation
    Inventors: Alejandro G. Schrott, James A. Misewich, Bruce A. Scott
  • Patent number: 6549349
    Abstract: Methods and systems for detecting and correcting for undesirable vibrations impacting the servo systems in data storage devices. A detection technique is provided wherein a detection filter is configured to scan a position signal of the servo system across a range of frequencies, and, at each respective scanned frequency, record an amplitude associated therewith. The recorded amplitudes are examined to determine whether any exceed a threshold, thereby locating a peak frequency of the vibration. Using the detected peak frequency of the vibration, a corrective filter is configured to operate about the peak frequency of vibration, thereby reducing its impact on the position signal in the servo system.
    Type: Grant
    Filed: September 18, 2001
    Date of Patent: April 15, 2003
    Assignee: International Business Machines Corporation
    Inventors: Sri Muthuthamby Sri-Jayantha, Arun Sharma, Hien Phu Dang, Naoyuki Kagami, Yuzo Nakagawa, Akira Tokizono, Isao Yoneda
  • Patent number: 6541331
    Abstract: A process of forming a high-k dielectric in an integrated circuit structure is disclosed. The process cleans a substrate to remove residual organic materials and strip native oxide from the surface of the substrate. Next, the process introduces precursors on the substrate in molar ratios consistent with formation of dielectric glass films. Following that, the process oxidizes the precursors, heats the precursors, and cools the precursors at a rate that avoids crystallization of the precursors.
    Type: Grant
    Filed: August 9, 2001
    Date of Patent: April 1, 2003
    Assignee: International Business Machines Corporation
    Inventors: Michael P. Chudzik, Lawrence Clevenger, Louis L. Hsu, Deborah A. Neumayer, Joseph F. Shepard, Jr.
  • Patent number: 6514843
    Abstract: A method of enhancing the rate of transistor gate corner oxidation, without significantly increasing the thermal budget of the overall processing scheme is provided. Specifically, the method of the present invention includes implanting ions into gate corners of a Si-containing transistor, and exposing the transistor including implanted transistor gate corners to an oxidizing ambient. The ions employed in the implant step include Si; non-retarding oxidation ions such as O, Ge, As, B, P, In, Sb, Ga, F, Cl, He, Ar, Kr, and Xe; and mixtures thereof.
    Type: Grant
    Filed: April 27, 2001
    Date of Patent: February 4, 2003
    Assignee: International Business Machines Corporation
    Inventors: Omer Dokumaci, Oleg Gluschenkov, Suryanarayan G. Hegde, Richard Kaplan, Mukesh Khare
  • Patent number: 6515723
    Abstract: The present invention solves a first problem, that the damage of the TFTs on the LCD panel of the tiling panel due to the ESD during the rubbing operation and other process, and a second problem that various kinds of lower glass substrate 1 and various kinds of upper glass substrate 2 are required to provide the tiling panel.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: February 4, 2003
    Assignee: International Business Machines Corporation
    Inventor: Shunji Suzuki
  • Patent number: 6509612
    Abstract: A method and structure for a metal oxide semiconductor field effect transistor (MOSFET) includes patterning a gate stack (having a gate conductor layer and a gate dielectric) over a substrate and modifying the gate dielectric beneath the gate conductor, such that the gate dielectric has a central portion and modified dielectric regions adjacent the central portion. The modified dielectric regions have a lower dielectric constant than that of the gate dielectric and the central portion is shorter than the gate conductor.
    Type: Grant
    Filed: May 4, 2001
    Date of Patent: January 21, 2003
    Assignee: International Business Machines Corporation
    Inventors: Lawrence A. Clevenger, Louis L. Hsu, Carl J. Radens, Joseph F. Shepard, Jr.
  • Patent number: 6502324
    Abstract: The present invention provides a method of alignment between sheet materials, a method of alignment, a substrate assembling method, and an aligning apparatus, which are capable of easily and surely performing highly accurate alignment and suppressing a reduction in material yield. After alignment performed based on a band-like light as a reference, alignment is performed based on a joint of a condenser lens portion of a lenticular lens as a reference. More specifically, the deviation of a liquid crystal display cell in a rotational direction is corrected by using a light emitted from a light source and condensed to be band-like at the lenticular lens as a reference. Subsequently, by changing a depth of focus of a microscope, measurement is performed for positions of a black matrix of the liquid crystal display cell and the joint of the condenser lens portion of the lenticular lens.
    Type: Grant
    Filed: December 12, 2000
    Date of Patent: January 7, 2003
    Assignee: International Business Machines Corporation
    Inventors: Michikazu Noguchi, Tsuneo Heitoh, Evan George Colgan, Masaru Suzuki
  • Patent number: 6501529
    Abstract: The present invention provides a newly constituted liquid crystal display element incorporating a touch sensor unit. In a liquid crystal display element where a liquid crystal layer is inserted between a first substrate and a second substrate, a display electrode for displaying an image and a touch electrode for detecting a touch position are provided on the surfaces of the first substrate and the second substrate opposing with each other. The display electrode may be used as the touch electrode. A pillar-shaped spacer may be formed to support the first substrate and the second substrate. Additionally, the touch electrode may be provided on a convex-shaped part formed on the substrate.
    Type: Grant
    Filed: July 28, 2000
    Date of Patent: December 31, 2002
    Assignee: International Business Machines Corporation
    Inventors: Mikio Kurihara, Eisuke Kanzaki, Fumitoshi Kiyooka
  • Patent number: 6495854
    Abstract: A method and structure for a d-wave qubit structure includes a qubit disk formed at a multi-crystal junction (or qubit ring) and a superconducting screening structure surrounding the qubit. The structure may also include a superconducting sensing loop, where the superconducting sensing loop comprises an s-wave superconducting ring. The structure may also include a superconducting field effect transistor.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: December 17, 2002
    Assignee: International Business Machines Corporation
    Inventors: Dennis M. Newns, Chang C. Tsuei
  • Patent number: 6490018
    Abstract: A reflective liquid crystal display device includes a first transparent substrate, a first electrode disposed on one surface of the first transparent substrate, a second transparent substrate having a first surface and a second surface, and a second electrode disposed on the first surface of the second transparent substrate. The first transparent substrate and the second transparent substrate are arranged so that the first electrode and the second electrode face each other and a space is provided between the first electrode and the second electrode. A guest-host liquid crystal layer is disposed in the space, and the first electrode and the second electrode define a plurality of picture element positions. A reflector unit having a shape of a trigonal pyramid is disposed at each of the plurality of picture element positions on the second surface of the second transparent substrate.
    Type: Grant
    Filed: September 19, 2000
    Date of Patent: December 3, 2002
    Assignee: International Business Machines Corporation
    Inventor: Yoichi Taira