Patents Represented by Attorney Oleg E. Alber
  • Patent number: 5360991
    Abstract: A packaged device with a lead frame, a lead frame and an article of manufacture comprising a base metal, a layer of nickel on the base metal, and a protective composite of metal layers on the nickel. The composite includes, in succession from the nickel layer, a layer of palladium or soft gold strike, a layer of palladium-nickel alloy, a layer of palladium and a layer of gold. The palladium or soft gold strike layer acts primarily as a bonding (an adhesive) layer between the Ni and Pd-Ni alloy layers and as a layer that enhances reduction in porosity of subsequent layers, Pd-Ni alloy layer acts as a trap for base metal ions, Pd layer acts as a trap for Ni ions from the Pd-Ni alloy layer, and the outer gold layer synergistically enhances the quality to the Pd layer. The various layers are in thickness sufficient to effectively accomplish each of their designated roles, depending on the processing and use conditions.
    Type: Grant
    Filed: July 29, 1993
    Date of Patent: November 1, 1994
    Assignee: AT&T Bell Laboratories
    Inventors: Joseph A. Abys, Igor V. Kadija, Edward J. Kudrak, Jr., Joseph J. Maisano, Jr.
  • Patent number: 5356526
    Abstract: A new metallization is described which is a composite of subsequent metal layers beginning with a layer of titanium and having in an ascending order the following composition: Ti--TiPd--Cu--Ni--Au. TiPd is an alloy of titanium and palladium containing from 0.3 to 14 weight percent Pd, by the weight of the alloy. The TiPd alloy is etchable in an aqueous HF solution containing from 0.5 to 2.0 and higher, preferably from 0.5 to 1.2 weight percent HF. The use of the TiPd alloy avoids the occurrence of Pd residues remaining after the etching of Ti layer and lift-off (rejection etching) of Pd layer in a prior art Ti--Pd--Cu--Ni--Au metallization. Ti and TiPd layers are present in a thickness ranging from 100 to 300 nm and from 50 to 300 nm, respectively, and in a total minimum thickness needed to maintain bonding characteristics of the metallization.
    Type: Grant
    Filed: October 20, 1993
    Date of Patent: October 18, 1994
    Assignee: AT&T Bell Laboratories
    Inventors: Robert P. Frankenthal, Ajibola O. Ibidunni, Dennis L. Krause
  • Patent number: 5346118
    Abstract: Described are a process for soldering at least one component having solder bumps to a substrate and a process for forming solder bumps on metal pads of an element, such as an IC package or substrate or both. The bumps are formed by stencil printing solder paste deposits on the metal pads, heating the solder paste deposits to reflow temperature of the solder in the solder paste deposits, and allowing the molten solder in each deposit to coalesce and during subsequent cooling solidify forming the bumps on the metal pads.
    Type: Grant
    Filed: September 28, 1993
    Date of Patent: September 13, 1994
    Assignee: AT&T Bell Laboratories
    Inventors: Yinon Degani, Thomas D. Dudderar, William L. Woods, Jr.
  • Patent number: 5329605
    Abstract: A waterproofed, insulated conductor or cable and a method of fabricating the same using a new slushing compound is described. The waterproofed insulated conductor or cable includes a core with at least one conductor element, a polymeric insulation jacket, at least one textile covering over the polymeric jacket, and at least one waterproof coating on top of said at least one textile covering, the waterproof coating comprising a blend of from 15 to 40, preferably 20, weight percent of pine tar oil, the remainder being essentially natural (Trinidad) asphalt. The invention is especially suitable for fabricating armored cables in which armor wires, deposited on a textile yarn bedding, are embedded in a coating of the blend and further are covered by at least one textile yarn roving and a waterproof coating on top of each of said at least one waterproof coating.
    Type: Grant
    Filed: October 27, 1992
    Date of Patent: July 12, 1994
    Assignee: AT&T Bell Laboratories
    Inventor: W. Bernard Wargotz
  • Patent number: 5328854
    Abstract: A process is described of producing devices, such as vertical cavity surface emitting lasers or resonant cavity light emitting devices, with an insulating region between an active region and top electrode, the insulating region having a centrally located window permitting passage of the electric current from the top electrode to the bottom electrode centrally of the active region. The insulating region is formed by ion implantation. The window is defined by a photoresist mask formed by angle etching a photoresist masking layer by RIE, so as to form the mask with parallel side walls inclined at an angle to the normal to the masked surface. The ion implantation is conducted at the same angle and parallel to the side walls of the of the mask. This permits fabrication of devices individually or in arrays. An exemplary independently addressable top emitting 8.times.18 VCSEL array (VCSELA) with GaAs multi-quantum well gain region was fabricated with excellent properties using the angle etched masks.
    Type: Grant
    Filed: March 31, 1993
    Date of Patent: July 12, 1994
    Assignee: AT&T Bell Laboratories
    Inventors: Daryoosh Vakhshoori, James D. Wynn, George J. Zydzik
  • Patent number: 5326626
    Abstract: This invention embodies an optical medium which consists of polar, multi-monomolecular layers of organic dye molecules with a net polar orientation, considerable second order optical nonlinearity, and excellent thermal stability. The medium is prepared by repeated sequential depositions on a surface of multivalent metal ions, e.g. Zr.sup.4+, and organic dyes terminated with an acidic functionality, e.g. a phosphonic acid, followed by activation of the surface for the next deposition sequence. The monolayers are deposited in the form of a multilayer film containing up to 1000 or more monolayers. The monolayers are deposited from liquid solutions; therefore they may be deposited on substrates having diverse topography and configurations. Second harmonic generation (SHG) analysis establishes that the multilayers have uniform polar order which does not decrease with increasing numbers of monolayers in the film.
    Type: Grant
    Filed: December 17, 1992
    Date of Patent: July 5, 1994
    Assignee: AT&T Bell Laboratories
    Inventors: Christopher E. D. Chidsey, Howard E. Katz, Thomas M. Putvinski, Geoffrey R. Scheller, Marcia L. Schilling, William L. Wilson
  • Patent number: 5315128
    Abstract: Described is a resonant-cavity p-i-n photodetector based on the reflection or transmission through a Fabry-Perot cavity incorporating non-epitaxial, amorphous layers with alternating refractive index difference which layers are electron-beam deposited on a light-gathering side of a commercially available photodetector. The materials of the Fabry-Perot cavity are selectable from materials, refractive indices of which fall within a large range (from n=1.26 for CaF.sub.2 to n=3.5 for Si) preferably from materials which are depositable in an amorphous state. The material combinations are selected so that only wavelengths resonant with the cavity mode will be detected. The microcavity of the RC-PIN design can also be deposited on any existing detector structure, without modification of semiconductor growth. Such a photodetector would be useful for wavelength de-multiplexing applications.
    Type: Grant
    Filed: April 30, 1993
    Date of Patent: May 24, 1994
    Assignee: AT&T Bell Laboratories
    Inventors: Neil E. J. Hunt, Erdmann F. Schubert, George J. Zydzik
  • Patent number: 5288951
    Abstract: A new metanization is described which is a composite of subsequent metal layers beginning with a layer of titanium and having in an ascending order the following composition: Ti - TiPd - Cu - Ni - Au. TiPd is an alloy of titanium and palladium containing from 0.3 to 14 weight percent Pd, by the weight of the alloy. The TiPd alloy is etchable in an aqueous BF solution containing from 0.5 to 2.0 and higher, preferably from 0.5 to 1.2 weight percent BF. The use of the TiPd alloy avoids the occurrence of Pd residues remaining after the etching of Ti layer and liftoff (rejection etching) of Pd layer in a prior art Ti-Pd-Cu-Ni-Au metanization. Ti and TiPd layers are present in a thickness ranging from 100 to 300 nm and from 50 to 300 nm, respectively, and in a total minimum thickness needed to maintain bonding characteristics of the metallization.
    Type: Grant
    Filed: October 30, 1992
    Date of Patent: February 22, 1994
    Assignee: AT&T Bell Laboratories
    Inventors: Robert P. Frankenthal, Ajibola O. Ibidunni, Dennis L. Krause
  • Patent number: 5279740
    Abstract: Disclosed is a process for improved removal of contaminants including oily wastes and other organic hydrocarbonaceous materials from ground waters and areas adjacent to or in the vicinity of ground water locations. Ground and ground water contamination due to its unique nature, as being below ground and often not readily removable, has presented unique challenges to efforts seeking to render contaminated sites safe for habitation and/or contain and prevent contaminants to other, non-contaminated areas. The present process presents a viable solution to the problem of removing hydrocarbonaceous contaminating materials from ground and ground water. The process includes the use of at least two injection wells and at least one extraction well. One of the injection wells is being used for introduction of steam into a subsurface saturated zone.
    Type: Grant
    Filed: January 14, 1992
    Date of Patent: January 18, 1994
    Assignee: AT&T Bell Laboratories
    Inventors: Angelo J. Basile, Gregory J. Smith, Joseph W. Aiken
  • Patent number: 5275711
    Abstract: This invention pertains to an apparatus and method for measuring throwing power of electroplating solutions. The apparatus is easy to use and gives reproducible measurements. The apparatus emulates the performance of a conventional Haring Blum cell. The major disadvantage of the standard Haring Blum cell is its limited aility to vary the solution mass transport, thus limiting its applicability to very low current density applications. Furthermore, even under low-mass transport conditions, non-uniform solution distribution is experienced leading to erroneous interpretation. This invention permits the study of throwing power of electroplating solutions under a whole variety of solution agitation. The invention embodies an instrument for and a method of measuring the throwing power of electrolytes.
    Type: Grant
    Filed: June 19, 1992
    Date of Patent: January 4, 1994
    Assignee: AT&T Bell Laboratories
    Inventors: Joseph A. Abys, Igor V. Kadija, Joseph J. Maisano, Jr.
  • Patent number: 5268087
    Abstract: Hull cell has been widely used in the plating industry for many years to evaluate the plating chemistry as a function of current densities. However, because of irreproducible mass transfer, Hull cells can only be used qualitatively for process control. A new design of an improved cell with extremely reproducible mass transfer performance utilizes a rotatable cathode, and permits quantitative analysis of the performance of the cell. The improved cell can also be used to study the mass transfer effect on deposit properties and throwing power, which can not be provided by the traditional Hull cell.
    Type: Grant
    Filed: December 23, 1991
    Date of Patent: December 7, 1993
    Assignee: AT&T Bell Laboratories
    Inventor: Po-Yen Lu
  • Patent number: 5268582
    Abstract: This invention embodies p-n junction devices comprising Group III-V compound semiconductors in which the p or n or both p and n regions are formed by a superlattice selectively doped with an amphoteric Group IV element dopant selected from carbon, germanium and silicone. The superlattice includes a plurality of periods, each including two layers. Depending on the conductivity type, only one of the layers in the periods forming the superlattice region of said type of conductivity is selectively doped with said dopant, leaving the other layer in these periods undoped. The superlattice is formed by Molecular Beam Epitaxy technique, and the dopant is incorporated into respective layers by delta-doping as in a sheet centrally deposited between monolayers forming the respective layers of the period. Each period includes 5 to 15 monolayers deposited in the two layers in a numerical ratio corresponding to a cation compositional ratio in the compound semiconductor. Low growth temperatures, e.g. ranging from 410.
    Type: Grant
    Filed: June 24, 1992
    Date of Patent: December 7, 1993
    Assignee: AT&T Bell Laboratories
    Inventors: Rose F. Kopf, Erdmann F. Schubert
  • Patent number: 5266352
    Abstract: Devices are described in which certain crosslinked silicone polymers are incorporated. These polymers have various functions such as encapsulating agents, surface protective agents or agents to index match optical components (e.g. optical fiber, optical waveguide, etc.) to other optical devices or articles. The polymer is a vinyl-terminated dimethyldiphenylsiloxane copolymer crosslinked with tri- or tetrafunctional silanes in the presence of a platinum catalyst. The phenyl group content of the crosslinked silicone copolymer is adjusted to change the index of refraction of the polymer to the optimum for the particular application contemplated. Polymer preparation procedures are described which yield good optical quality for the polymer as well as optimum physical and chemical properties.
    Type: Grant
    Filed: December 30, 1992
    Date of Patent: November 30, 1993
    Assignee: AT&T Bell Laboratories
    Inventors: Robert W. Filas, Bertrand H. Johnson, Ching-Ping Wong
  • Patent number: 5265177
    Abstract: This invention embodies an integrated optical package including an optical component having an asymmetric modal output, and a lens integrated with the component for coupling to another optical component having a large modal area. The coupling is achieved by the use of a Polymeric Elongated Waveguide Emulating (PEWE) lens. In the exemplary embodiment the first optical component is a modulator, and the other optical component is an optical fiber. A facet of the modulator is etched by reactive ion etching (RIE) which allows integration of the PEWE lens on a common substrate. The lens is manufactured using a polymer film on a dielectric cladding layer. The fabrication relies on the remelt and reflow properties of polymer films to provide a smooth adiabatic mode contraction from a circular (optical fiber) mode (.apprxeq.6 .mu.m in diameter) to a semiconductor mode (.apprxeq.1 .mu.m) over a length of 250 .mu.m. The PEWE lens permits coupling with an insertion loss of 0.
    Type: Grant
    Filed: May 8, 1992
    Date of Patent: November 23, 1993
    Assignee: AT&T Bell Laboratories
    Inventors: Alfred Y. Cho, Deborah L. Sivco, Daryoosh Vakhshoori
  • Patent number: 5256851
    Abstract: An asymmetric hyperbolic microlens on the end of a single-mode optical fiber enhances the fiber's coupling to elliptical laser beams. The lenses, with controlled eccentricity ratios, are made by micromachining the end of the fiber with a pulsed CO.sub.2 laser as the fiber is directed, preferably by computer control, about the focused laser beam. Coupling efficiencies of 90 percent (-0.75 dB) have been realized with single transverse mode lasers at a wavelength of 0.98 .mu.m having an approximately 3 to 1 beam ellipicity. With multimode lasers at 1.48 .mu.m having similar elliptical beams, the asymmetric lenses demonstrate an almost 2 dB increase in coupling efficiency over symmetric hyperbolic microlenses. Such lasers are useful to pump erbium-doped fiber amplifiers. About 120 mw was coupled from such a laser into single-mode fiber.
    Type: Grant
    Filed: February 28, 1992
    Date of Patent: October 26, 1993
    Assignee: AT&T Bell Laboratories
    Inventor: Herman M. Presby
  • Patent number: 5249195
    Abstract: This invention embodies an optical device with a Fabry-Perot cavity formed by two reflective mirrors and an active layer which is doped with a rare earth element selected from lanthanide series elements with number 57 through 71. The thickness of the active layer being a whole number multiple of .lambda./2 wherein .lambda. is the operating, or emissive, wavelength of the device, said whole number being one of the numbers ranging from 1 to 5, the fundamental mode of the cavity being in resonance with the emission wavelength of said selected rare earth element. Cavity-quality factors exceeding Q=300 and finesses of 73 are achieved with structures consisting of two Si/SiO.sub.2 distributed Bragg reflector (DBR) mirrors and an Er-implanted (.lambda./2) SiO.sub.2 active region. The bottom DBR mirror consists of four pairs and the upper DBR mirror consists of two-and-a half pairs of quarterwave (.lambda./4) layers of Si and SiO.sub.2.
    Type: Grant
    Filed: June 30, 1992
    Date of Patent: September 28, 1993
    Assignee: AT&T Bell Laboratories
    Inventors: Leonard C. Feldman, Neil E. J. Hunt, Dale C. Jacobson, John M. Poate, Erdmann F. Schubert, Arjen M. Vredenberg, Yiu-Huen Wong, George J. Zydzik
  • Patent number: 5233200
    Abstract: This invention is a process of contactless monitoring the tension in a moving fiber, such as during the process of drawing optical fibers from preforms, and a non-contacting tension gauge which allows measurement of fiber tension at line speed. The device can be used to monitor the tension during the run without any adverse effects on fiber performance. The measurement may be steady, intermittent or sinusoidal as appropriate. The process includes the steps of sensing an initial position of a moving optical fiber, applying a gas jet onto a section of the optical fiber in a direction transverse to the direction of movement of the fiber so as to cause deflection of the moving fiber axially of the gas jet, sensing the magnitude of deflection of the fiber relative to the said initial position, and, depending on the magnitude of deflection, adjusting the tension in the fiber so as to cause the change in the magnitude of deflection to a preselected value.
    Type: Grant
    Filed: December 23, 1991
    Date of Patent: August 3, 1993
    Assignee: AT&T Bell Laboratories
    Inventors: Frank V. DiMarcello, Arthur C. Hart, Jr., Richard G. Huff, Kenneth L. Walker
  • Patent number: 5228976
    Abstract: The invention provides, in electroplating quality control methods for manufacturing, better similarity and relevance between a Hull Cell quality control test and a particular plating operation. The invention is a simple and yet functional instrument which can be used to identify the performance of the plating bath prior to manufacturing operation under similar hydrodynamic conditions. The instrument is a rotating cylinder with a flexible Cu test panel attached to its surface. Like a Hull Cell, a range of current density can be simultaneously applied. Unlike a Hull Cell, the rotating speed of the cylinder and hence the solution agitation is practically unlimited. The operator can identify the operating window for the particular process and apply them to the production line. The instrument has also demonstrated usefulness in developing proprietary electroplating chemistries.
    Type: Grant
    Filed: July 9, 1990
    Date of Patent: July 20, 1993
    Assignee: AT&T Bell Laboratories
    Inventors: Joseph A. Abys, Igor V. Kadija
  • Patent number: 5226053
    Abstract: This invention embodies a LED in which an optical cavity of the LED, which includes an active layer (or region) and confining layers, is within a resonant Fabry-Perot cavity. The LED with the resonant cavity, hereinafter called Resonant Cavity LED or RCLED, has a higher spectral purity and higher light emission intensity relative to conventional LEDs. The Fabry-Perot cavity is formed by a highly reflective multilayer distributed Bragg reflector (DBR) mirror (R.sub.B .gtoreq.0.99) and a mirror with a low to moderate reflectivity (R.sub.T .perspectiveto.0.25-0.99). The DBR mirror, placed in the RCLED structure between the substrate and the confining bottom layer, is used as a bottom mirror. Presence of the less reflective top mirror above the active region leads to an unexpected improvement in directional light emission characteristics.
    Type: Grant
    Filed: December 27, 1991
    Date of Patent: July 6, 1993
    Assignee: AT&T Bell Laboratories
    Inventors: Alfred Y. Cho, Erdmann F. Schubert, Li-Wei Tu, George J. Zydzik
  • Patent number: 5217811
    Abstract: Devices are described in which certain crosslinked silicone polymers are incorporated. These polymers have various functions such as encapsulating agents, surface protective agents or agents to index match optical components (e.g. optical fiber, optical waveguide, etc.) to other optical devices or articles. The polymer is a vinyl-terminated dimethyldiphenylsiloxane copolymer crosslinked with tri- or tetrafunctional silanes in the presence of a platinum catalyst. The phenyl group content of the crosslinked silicone copolymer is adjusted to change the index of refraction of the polymer to the optimum for the particular application contemplated. Polymer preparation procedures are described which yield good optical quality for the polymer as well as optimum physical and chemical properties.
    Type: Grant
    Filed: September 11, 1992
    Date of Patent: June 8, 1993
    Assignee: AT&T Bell Laboratories
    Inventors: Robert W. Filas, Bertrand H. Johnson, Ching-Ping Wong