Abstract: This invention is directed to the fabrication of semiconductor devices, especially those comprising III-V and II-VI compound semiconductor materials, and involves Rapid Thermal Annealing (RTA) of semiconductor wafers, especially those implanted with a dopant(s). The invention is also concerned with a black-box implement used in combination with the RTA. The process includes enclosing a wafer to be annealed within a "black-box" comprising components of a black body material and subjecting the black box with the wafer therein to an RTA.

Abstract: This invention is concerned with coupling optical energy efficiently by means of a microlens at an end of an optical fiber, the microlens being capable of improved coupling efficiency exceeding 55 percent (-2.5 dB), with coupling efficiencies of about 90 percent or more (less than 0.45 dB and as low as 0.22 dB loss) for uncoated lenses and of 95 percent or more for antireflection coated lenses being obtainable. An optimal microlens shape is substantially a hyperboloid of revolution having a relatively short focal length, f, e.g., for a mode radius of the optical device .omega..sub.0 =1 .mu.m and a mode radius of the optical fiber .omega..sub.1 =5 .mu.m, f.perspectiveto.12 .mu.m. The microlens having the substantially hyperboloid of revolution shape may be produced by laser micromachinning technique. The optical fiber with the novel microlens at its end may be used in optical communication packages comprising the fiber and an optical device.

Abstract: A process for the preparation of superconducting ceramic materials by a solid state reaction technique. The process is especially suited for production of powders including .gtoreq.95% of Ba.sub.2 YCu.sub.3 O.sub.7 for use in producing sintered ceramic bodies including >99% Ba.sub.2 YCu.sub.3 O.sub.7.

Abstract: A procedure is described for making niobium triselenide for use in nonaqueous cells. The procedure involves synthesis of NbSe.sub.3 from Nb.sub.2 Se.sub.9 which is rapid, easily adapted to manufacturing conditions and yield product with excellent characteristics for lithium cell applications.

Abstract: A sample inspection arrangement incorporates a sample of polyethylene with an included defect, or flaw, a light source containing near infrared wavelengths, and a video camera. Polyethylene has relatively high spectral transmissivity for wavelengths in the band of near infrared wavelengths. The video camera collects data from a beam of the near infrared light which either reflects from or is transmitted directly through a portion of the polyethylene sample. Data is collected from both defect free portions of the polyethylene sample and portions of polyethylene sample including at least one defect. A visual image of the polyethylene sample and included defect is produced on either a video monitor, a paper print out, or a photograph. The method for inspecting a sample of cable or a continuously moving section of cable also is described.

Abstract: A sol-gel procedure is described for making display devices with luminescent films. The procedure typically involves hydrolysis and polymerization of an organometallic compound together with selected luminescent ions, and coating of a substrate and then heat treatment to form a polycrystalline layer. The procedure is particularly useful for making cathode ray tubes, expecially those for high power operation because of the excellent luminescence characteristics obtained, good thermal contact from the luminescent layer to faceplate and low cost of the procedure. Also described are the devices obtained which exhibit a layer of complex oxide with network structure much like the corresponding bulk compound.

Abstract: This invention relates to a process of fabricating a rechargeable non-aqueous cell and to a cell produced by the process. The cell includes a unique laminated cathode structure. Other structural features of the non-aqueous cell including anode, non-aqueous electrolyte and separator, are generally conventional. The novel cathode is composed of a current collector consisting of an unperforated metal foil to which are bonded mats of cathode active material, selected from transition-metal chalcogenides. In the process of forming the cathode, a non-perforated metal foil, such as aluminum, is coated with a layer of bonding polymer and after the mats of cathode-active material, such as niobium triselenide, are placed on both sides of the metal foil, the composite is compacted, preferably by passing between rollers. Electronic conduction is enhanced by either admixing carbon black with the polymer or coating that surface of the mats which is to be in contact with the metal foil, with a thin layer of carbon black.

Abstract: This invention concerns with a process and apparatus for fabricating microlenses on optical fibers. A pulsed laser beam and an end portion of a fiber are arranged relative to each to another so that the laser beam is incident on the end portion of the fiber at an acute angle .theta. to the longitudinal axis of the fiber. The angle is selected to attain a desired curvature of a lens formed by ablation and heating of the end portion of the fiber by the laser beam. A movement of the fiber and the laser relative each to another results in progressive engagement of the end portion of the fiber with the laser for a preselected distance so as to produce a short taper with a lens at the end thereof. In the preferred embodiment, the fiber rotated about its axis within a passage of the holder which moves the end-portion of the fiber into and through the laser beam resulting in the said lens. The precise repeatability of the lens formation may be controlled by a computer.

Abstract: Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have high silica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure using a glass target made from restructured glass. Commercial availability of such glass makes the procedure very convenient. Such glass layers are advantageously used as barrier layers in annealing procedures used when semiconductors are doped (e.g., ion implantation in semiconductors) and as encapsulating layers in finished devices.

Abstract: Low temperature sintering of grade materials sintered to 99 percent of the theoretical density is described using TiO.sub.2 powder prepared by hydrolyzing titanium isopropoxide and calcining at 850.degree. C.

Abstract: A field-effect transistor is created on a GaAs semi-insulating substrate using molecular beam epitaxy by fabricating a delta-doped monolayer with a silicon dopant between two undoped GaAs layers grown over the semi-insulating substrate. A plurality of delta-doped monolayers are grown over the surface of the upper undoped layer interleaved with layers of GaAs having a thickness equal to or less than the tunneling width of electrons in GaAs. A channel is etched through the plurality of delta-doped monolayers to permit a gate electrode to contact the upper undoped GaAs layer. Source and drain electrodes are deposited over the delta-doped monolayers on each side of the channel.

Abstract: A non-alloyed ohmic contact in gallium arsenide is described wherein a plurality of delta-doped monolayers are placed at a predetermined distance from each other and from the metal to semiconductor interface of the contact. The predetermined distance is chosen to keep the tunneling barrier extremely thin. In the embodiment shown, silicon is used as a dopant in the gallium arsenide material but other elements from groups II, IV and VI of the periodic table of elements may be used in other III-V semiconductor substrates.

Abstract: Low-loss coupling between a local feed connection or node, and a multi-mode optical fiber bus is provided by reflective insertion of a relatively small number of modes into the bus fiber. Essentially all input power available at the node is thus inserted into the bus, while but a small portion of power is extracted from the bus.

Abstract: A solid state laser is disclosed wherein a semiconductor active layer is arranged in a Fabry-Perot cavity and the active layer is doped with a rare earth ion having a dominant emission wavelength. The proportion of elements for the compound active layer is chosen such that the bandgap corresponds to a wavelength which is longer than the emission wavelength of the rare earth ion. In the specific embodiment disclosed, the quarternary semiconductor compound is gallium indium arsenide phosphide and the rare earth ion is erbium.