Abstract: Method for forming a first one time, voltage programmable logic element in a semiconductor substrate of first conductivity type, forming a first layer beneath a surface of the substrate, the first layer having a second conductivity type. A trench is formed through the surface and passing through the first layer. The trench comprises an interior surface, a dielectric material lining the interior surface and a conductive material filling the lined trench. The first logic element is configured so that a predetermined voltage or higher applied between the conductive material and the first layer causes a breakdown within a region of the trench.

Abstract: A method of testing a circuit having multiple elements is disclosed. A plurality of faults representing the elements of the circuit for testing said circuit is created. The faults are grouped based on common attributes of the faults. A test pattern for each group of faults is created. Finally, the circuit is tested using test patterns for each group of faults.

Abstract: An apparatus for reading out multiple match hits from a content addressable memory (CAM), comprising a priority encoder for receiving a plurality of matchlines from a CAM and for encoding addresses of the CAM that are associated with the matchlines that indicate a match, and a matchline mask system for selectively masking off a matchline that indicates a match from the priority encoder after the address associated with that matchline is encoded by the priority encoder.

Abstract: A semiconductor device having an increased intersection perimeter between edge regions of a first conductor and portions of a second conductor is disclosed. In one embodiment, the intersection perimeter is the region where the perimeter of a gate structure overlaps an active area. The intersection perimeter between the conductors directs the breakdown of the dielectric material, increasing the likelihood that the programming event will be successful. In at least one embodiment, the portion of a current path that travels through a highly doped area is increased while the portion that travels through a non-highly doped area is decreased. This decreases post-program resistance, leading to better response time for the device.

Abstract: A statistical method is described for reliability selection of dies on semiconductor wafers using critical wafer yield parameters. This is combined with other data from the wafer or module level reliability screens (such as voltage screen or burn-in) to obtain the relative latent defect density. Finally the modeled results are compared with actual results to demonstrate confidence in the model.

Abstract: A control circuit for a memory array device having one or more memory storage cells associated therewith includes a true bit-line and a complementary bit-line coupled to the one or more memory storage cells. A sense amplifier is coupled to the true and complementary bit-lines, the sense amplifier being configured to amplify a small voltage difference between the true bit-line and the complementary bit-line to a full level signal at predetermined high and low logic voltage levels. A bit-switch pair selectively couples the bit-lines and said sense amplifier to fan-in circuitry, and is further configured so as to couple the fan-in circuitry to the true and complementary bit-lines prior to the activation of a wordline associated with a selected cell for a write operation thereto. Thereby, the write operation to the selected cell is commenced prior to the completion of time associated with signal development on the true and complementary bit-lines.

Abstract: A structure and method for identifying a physical location of a defect in a logic circuit based on a physical location of a logic latch having failing data. The logic circuit includes a plurality of logic latches, each having a predetermined physical location within the logic circuit. The logic latches are connected to devices adjacent the logic latches, such that the failing data in the logic latch indicates a failure of a device adjacent the logic latches.

Abstract: A method for detecting semiconductor process stress-induced defects. The method comprising: providing a polysilicon-bounded test diode, the diode comprising a diffused first region within an upper portion of a second region of a silicon substrate, the second region of an opposite dopant type from the first region, the first region surrounded by a peripheral dielectric isolation, a peripheral polysilicon gate comprising a polysilicon layer over a dielectric layer and the gate overlapping a peripheral portion of the first region; stressing the diode; and monitoring the stressed diode for spikes in gate current during the stress, determining the frequency distribution of the slope of the forward bias voltage versus the first region current at the pre-selected forward bias voltage and monitoring, after stress, the diode for soft breakdown. A DRAM cell may be substituted for the diode. The use of the diode as an antifuse is also disclosed.

Abstract: A method of memory BIST (Built-In Self Test) and memory repair that stores a redundancy calculation on-chip, as opposed to scanning this data off-chip for later use. This method no longer requires level-sensitive scan design (LSSD) scanning of memory redundancy data off-chip to the tester, and therefore does not require re-contacting of the chip for electrical fuse blow.

Abstract: A system for modifying the power up and diagnostic procedure of systems such that the system voltage is lowered to a predetermined voltage level that has been shown to detect delay faults. The system conducts the normal procedure of power up/diagnostic routines at the described VLV condition and then logs failures to this VLV condition. Upon completion of the VLV power up, the system is shut down normally and then subsequently powered up again at the normal voltage conditions. Discrepancies between the VLV power up/diagnostics are noted in the system log and communicated appropriately.

Abstract: A method and structure for an array of content addressable memory (CAM) cells is disclosed. Each of the CAM cells has a search line and a bitline parallel to the search line. Across the array, search lines and bit lines of the CAM cells are interdigitated so that the search lines and bitlines alternate across the array. CAM cell macro's are inverted with respect to adjacent macros to balance parasitic capacitances across the array.

Abstract: The present invention provides a systematic means of switching contiguous segments of each production-test shift-register into several diagnostic scan-configurations. If the functional scan-verification tests fail for the production-test scan-configuration, then these same verification tests can be repeated for the alternative, diagnostic scan configurations. Using the principle of superposition, the passing and failing LSSD flush/scan tests for these diagnostic configurations will allow the failing location to be localized to a single segment of the original failing shift-register.

Abstract: A built-in self-test (BIST) system and method for testing an array of embedded electronic devices, the BIST comprising: a shift register device connected to an output pin of an embedded array of electronic devices being tested and for receiving a failure indication signal at a real-time output pin of the device under test, the shift register generating a unique signature in response to receipt of the failure indication; a device for determining whether the generated unique signature is represented in a table comprising known signature values and corresponding bitmaps of prior determined array defects for that device under test; wherein the need to bitmap the array is avoided when a known failure signature is determined.

Abstract: A method for bursting data in a wide I/O memory device with improved access time and reduced data-bus complexity. The memory read operation accesses n bits of data which are output in eight n/8-bit I/O words in any particular order in accordance with the burst base address and linear or interleaved burst sequence controls. For every I/O, eight bits of data are presented to a 9-to-1 multiplexer. The first of eight bits in the burst sequence is the access time-limiting bit and is preselected by the burst base addresses of the 9-to-1 multiplexer. Subsequent bits in the burst sequence have extra half-cycles to be output, and use look-aside 8-to-1 multiplexers controlled by a burst counter with timings synchronized to the burst data clock timings.

Abstract: A programmable element that has a first diode having an electrode and a first insulator disposed between the substrate and said electrode of said first device, said first insulator having a first value of a given characteristic, and an FET having an electrode and a second insulator disposed between the substrate and said electrode of said second device, said second insulator having a second value of said given characteristic that is different from said first value. The electrodes of the diode and the FET are coupled to one another, and a source of programming energy is coupled to the diode to cause it to permanently decrease in resistivity when programmed. The programmed state of the diode is indicated by a current in the FET, which is read by a sense latch. Thus a small resistance change in the diode translates to a large signal gain/change in the latch. This allows the diode to be programmed at lower voltages.

Abstract: A memory array architecture employs a full Vdd bitline precharged voltage and a low wordline boost voltage, which is less than Vdd plus the threshold voltage of the access transistor. In a write mode, a first low level of a data bit is almost fully written to a storage element, however a second high level of the data bit is not fully written to the storage element. In a read mode, the first low level of the data bit is fully read out from the storage element, however the second high level of the data bit is not read out by utilizing the access transistor threshold voltage. This allows a sensing signal only with the first voltage level transfer to the Vdd precharged BL. A reference WL is preferably used for generating a reference bitline voltage for a differential Vdd sensing scheme. Alternatively, a single BL digital sensing scheme may be used.

Abstract: A method of inserting test points in a circuit design includes selecting a node in the circuit design, determining a driver cell of the node, selecting a replacement cell for the driver cell and replacing the driver cell in the circuit design with the replacement cell. The replacement cell has the same function of the driver cell as well as a test point function. Additionally, the replacement cell is chosen so as not to break timing.

Abstract: A structure for testing external connections to semiconductor devices. The structure includes an external electrical path between selected external connections on the semiconductor devices.

Abstract: Wafer-level testing is performed on an electronic device to be used in an optical communications system. An optical test signal is generated and is provided to a first photo detector. An electrical output of the first photo detector is supplied to the electronic device on the wafer. An electrical output from the electronic device on the wafer is used to drive a light source. An optical output of the light source is supplied to a second photo detector and an electrical signal output from the second photo detector is examined.

Abstract: A method and apparatus for testing the chip-to-package connectivity of a common I/O of a semiconductor chip is disclosed which uses reduced pin count testing methods. The method includes driving a test signal transition onto a control pad of a semiconductor chip with a weak driver and comparing the transition rise time with a threshold value. For an I/O with a faulty chip-to-package connection, the rise time is much faster than for an I/O with a completed chip-to-package connection. Additional impedances may also be added to the tester fixturing to increase the sensitivity of the test equipment to the capacitance of the I/O connections.