Abstract: A process for forming a nanoporous silica dielectric coating on a substrate. A substrate containing a deposited film is suspended within a sealable hotplate, while remaining free of contact with the hotplate. The hotplate is sealed and an inert gas is flowed across the substrate. The hotplate is heated to a temperature of from about 350° C. or higher, and the substrate is forced to contact the heated hotplate. The substrate is heated for a time that sufficiently removes outgassing remnants from the resultant nanoporous dielectric coating.

Abstract: A process for the formation of structures in microelectronic devices such as integrated circuit devices wherein a patterned layer of a metal, alloy, nitride or silicide is subjected to a low temperature, wide beam electron beam annealing. The process involves depositing a silicide, nitride, metal, or metal alloy layer onto a substrate; and then overall flood exposing said entire layer to electron beam radiation under conditions sufficient to anneal the layer.

Abstract: Improved linear illumination sources are disclosed which utilize external, highly reflective enclosures containing one or more linear openings and thereby achieve improved source efficiency, output irradiance and/or output radiance. Such improved illumination sources may be combined with additional optical elements to produce more complex illumination systems.

Abstract: A treated substrate produced by a process for treating a dielectric layer on a substrate, which comprises applying a sufficient amount of a liquid dielectric composition onto an upper surface of a semiconductor substrate to thereby form a dielectric layer on the upper surface of the substrate, the dielectric layer having a thickness of from about 2,000 to about 50,000 angstroms; heating a surface of the dielectric layer and exposing the dielectric layer to an electron beam radiation, in which the electron beam radiation is concentrated at a distance within about 1,000 angstroms from the surface of the dielectric layer, under vacuum conditions to remove substantially all moisture and/or contaminants from the surface of the dielectric layer at a depth of up to about 1,000 angstroms from the surface of the dielectric layer; and chemical vapor depositing a chemical vapor deposit material onto the surface of the treated dielectric layer while maintaining the vacuum conditions.

Abstract: A stuffed toy formed by providing stuffable toy shell having several fabric members fastened together, thereby defining a container which encloses an interior chamber and which has an exterior surface defining a shape of a toy. The container has an opening which extends through the container material, and is in communication with the interior chamber. A drawstring is stitched around the opening such that the drawstring may be tightened to thereby close the opening. After inserting a stuffing material into the interior chamber of the container through the opening, the drawstring is tightened to close the opening and retain the stuffing in the interior chamber of the container. The closed may opening form a puckered seam which resembles a navel, a scar or other characteristic feature in appearance. The method is generically applicable to doll making.

Abstract: A filtration systems for fluids, particularly biological fluids. The filtration system includes a filter containing compartment connected at one end to a storage vessel and at the other end to a diaphragm pump. The filter comprises a hollow fiber module or a screen filter. The vessel serves as a storage container for a process stream to be filtered. The diaphragm pump provides the means for generating rapid, alternating, low shear tangential flow between the vessel and pump and through the hollow fibers or screen filter. The system allows easy removal of wastes from the fluid and the addition of fresh fluid to replenish the filtered fluid.

Abstract: A single mode optical waveguide which is lithographically formed and employs polymeric materials having low propagation loss. The optical waveguide has a substrate, a polymeric, buffer layer having an index of refraction nb disposed on a surface of the substrate, a patterned, light-transmissive core layer having an index of refraction nc disposed directly on a surface of the cladding layer, and an overcladding layer having an index of refraction no on a top surface of the core, side walls of the core, and exposed portions of the buffer layer, with nb<no<nc and &Dgr;n=nc−no.

Abstract: An insulating insert for a magnetic air valve having a metal housing. The insert minimizes electrical contact between the metal housing and wires or other conductive objects contained within the metal housing. The insert comprises an electrically insulating material, and includes an insulating sleeve having side walls, top and bottom opposite open ends, and a threaded bushing attached around a hole through one side wall of the sleeve. The bushing engages a strain relief wire connector or hollow bolt of the magnetic valve, which wire connector contains wires passing into the housing to form electrical connections with the magnetic core of the valve. The insert also preferably includes an insulating flange around the perimeter of the top open end of the sleeve to thereby further insulate the housing, and to provide a seal between the housing and an optional covering.

Abstract: A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.

Abstract: A process for treating silica dielectric film on a substrate, which includes reacting a suitable hydrophilic silica film with an effective amount of a multifunctional surface modification agent. The film is present on a substrate and optionally has a pore structure with hydrophilic pore surfaces, and the reaction is conducted for a period of time sufficient for said surface modification agent to penetrate said pore structure and produce a treated silica film having a dielectric constant of about 3 or less, wherein the surface modification agent is hydrophobic and suitable for silylating or capping silanol moieties on such hydrophilic surfaces. Dielectric films and integrated circuits including such films are also disclosed.

Abstract: Compositions of, genetic constructions coding for, and methods for producing multivalent antigen-binding proteins are described and claimed. The methods include purification of compositions containing both monomeric and multivalent forms of single polypeptide chain molecules, and production of multivalent proteins from purified monomers. Production of multivalent proteins may occur by a concentration-dependent association of monomeric proteins, or by rearrangement of regions involving dissociation followed by reassociation of different regions. Bivalent proteins, including homobivalent and heterobivalent proteins, are made in the present invention. Genetic sequences coding for bivalent single-chain antigen-binding proteins are disclosed. Uses include all those appropriate for monoclonal and polyclonal antibodies and fragments thereof, including use as a bispecific antigen-binding molecule.

Abstract: The invention relates to cured dielectric films and a process for their manufacture which are useful in the production of integrated circuits. Dual layered dielectric films are produced in which a lower layer comprises a non-silicon containing organic polymer and an upper layer comprises an organic, silicon containing polymer. Such films are useful in the manufacture of microelectronic devices such as integrated circuits (IC's). In one aspect the upper layer silicon containing polymer has less than 40 Mole percent carbon containing substituents, and in another aspect it has at least approximately 40 Mole percent carbon containing substituents.

Abstract: The present invention relates to a pharmaceutical composition for the nasal transmucosal delivery of a biocompatible polymer-biologically active peptide conjugate. The pharmaceutical composition of the present invention increases the water solubility of peptide, which is sparingly soluble in water, improves its stability by protecting it from being degraded by proteases. As a result, the number of administrations of the drug and the side-effects induced by drug abuse are decreased. In addition, since the pharmaceutical composition of the present invention is delivered through the nasal cavity, it allows drug activity to be expressed in a short period of time and improves a bioavailability.

Abstract: A hand held electronic data organizer which may conveniently serve as a portable key chain device. The organizer includes a housing which contains internal electronic components such as a microprocessor coupled to a data memory. These internal components are electronically coupled to external electronic components of the housing such as an input arrangement, for entering alphanumeric data into the data memory, and a display, for displaying such data recalled from the data memory. The organizer also includes a backlight for illuminating the display, and a flashlight element for projecting a beam of light outside of the housing. The invention preferably includes a key chain attachment implement for attaching keys and the like to the housing.

Abstract: A microelectronic device having a self aligned metal diffusion barrier is disclosed. A microelectronic device having a substrate and a dielectric layer on the substrate. A trench having inside walls is formed through the dielectric layer. A lining of a barrier metal is on the inside walls of the trench and a fill metal is in the trench between the linings on the inside walls of the trench. The fill metal and the barrier metal have substantially different removal selectivities. A covering of the barrier metal is on the fill metal and the covering spans the linings on the inside walls of the trench and conforms to the top of the fill metal in the trench.

Abstract: The present invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. A precursor of an alkoxysilane, and low and high volatility solvents are mixed at a pH of about 2-5, raised to a pH of about 8 or above with a low volatility base and deposited on a semiconductor substrate. After exposure to atmospheric moisture, a nanoporous dielectric film is produced on the substrate.

Abstract: A continuous process for forming multilayer circuit structures which includes applying and curing a film forming polymer onto the matte side of a copper foil. The opposite (shiny) side of the foil is optionally but preferably cleaned, and applied with a photoresist which is then optionally but preferably dried. The photoresist is exposed, and developed to remove the nonimage areas but leave the image areas. The foil under the removed nonimage area is then etched to form a copper pattern, and the remaining photoresist is optionally but preferably removed. The foil is then cut into sections, and then optionally but preferably punched with registration holes. The copper pattern is then optionally but preferably treated with a bond enhancing treatment, optionally but preferably inspected for defects, and laminated onto a substrate to form a multilayered circuit structure.

Abstract: The invention provides microelectronic devices such as integrated circuit devices. Such have vias, interconnect metallization and wiring lines using dissimilar low dielectric constant intermetal dielectrics. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. A microelectronic device is formed having a substrate and a layer of a first dielectric material positioned on the substrate. A layer of a second dielectric material is positioned on the first dielectric layer and an additional layer of the first dielectric material positioned on the second dielectric material.

Abstract: A nanoporous dielectric film useful for the production of semiconductor devices, integrated circuits and the like, is provided, together with processes for producing these improved films. The films are produced by a process that includes (a) preparing a silicon-based, precursor composition including a porogen, (b) coating a substrate with the silicon-based precursor to form a film, (c) aging or condensing the film in the presence of water, (d) heating the gelled film at a temperature and for a duration effective to remove substantially all of said porogen, and wherein the applied precursor composition is substantially aged or condensed in the presence of water in liquid or vapor form, without the application of external heat or exposure to external catalyst.

Abstract: The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.