Abstract: The disclosed is a read only memory having a plurality of memory blocks each associated with main bit lines and sub-bit lines, and a plurality of memory cells for storing information, and sense amplifiers for reading the information stored in the memory cells through the main bit lines. The memory also has a block selection part disposed between the blocks and having a plurality of block selection transistors connecting the main bit lines to the sub-bit lines. The sub-bit lines elongate to at least an adjacent block and alternatively connected to the main bit lines through the block selection part.

Abstract: A method of ensuring instruction cache consistency in a processor includes executing a flush instruction whenever a program executed by the processor stores data to a given data address and, subsequently, executes another instruction requiring a data fetch from the same address. According to this method, a write cache prevents any addressed instruction from residing in the write cache and the instruction cache at the same time. Thus, when an instruction having a store address not already present in the write cache is retired to the write cache, the write cache instructs the instruction cache to invalidate any data stored therein having a same address. The flush instruction prevents execution of any other instructions after the store at least until the store to the memory address has been allocated to a write cache of the processor, thus enabling the write cache to invalidate the subsequent instruction at the same address in the instruction cache.

Abstract: A non-volatile semiconductor memory device has a data latch that stores data to be written into memory cells, and functions as a sense amplifier for data read from the memory cells. Read data and write data have opposite polarities in the data latch. A data polarity control circuit in the memory device generates a selection signal indicating whether the data latch stores read data or write data. A data polarity switch generates externally readable data by outputting read data stored in the data latch, and by inverting write data stored in the data latch.

Abstract: A method of fabricating a semiconductor device where the formation of a conductive layer typically over a storage capacitor on the device is used both as a plate electrode and also as an interconnect line. The method therefore combines the fabrication process steps of forming a plate electrode with the steps of forming a wiring layer. In a preferred embodiment, the storage capacitor is part of a cell array portion of a semiconductor memory device, whereas the interconnect line is in a peripheral portion of the memory device.

Abstract: The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention.

Abstract: A method of controlling a memory device is disclosed wherein the memory device includes a plurality of memory cells. The method comprises providing first block size information to the memory device, wherein the first block size information defines a first amount of data to be output onto a bus in response to a read request. The method further includes issuing a first read request to the memory device, wherein in response to the first read request, the memory device outputs the first amount of data corresponding to the first block size information onto the bus synchronously with respect to an external clock signal. In one preferred embodiment, the method may include providing a code which is representative of a number of clock cycles of the first and second external clock which are to transpire before data is output by the memory device onto the bus. The memory device stores the code in a programmable register on the memory device.

Abstract: The present invention is directed to a method of operating a memory device wherein the memory device includes a plurality of memory cells. The method comprises providing first block size information to the memory device, wherein the first block size information defines a first amount of data to be output onto a bus in response to a read request. The method further includes issuing a first read request to the memory device, wherein in response to the first read request, the memory device outputs the first amount of data corresponding to the first block size information onto the bus synchronously with respect to a first external clock signal and a second external clock signal. In one preferred embodiment, the method may further include providing a code which is representative of a number of clock cycles of the first and second external clock which are to transpire before data is output by the memory device onto the bus. The memory device stores the code in a programmable register on the memory device.

Abstract: A method of forming an interconnection by using a landing pad is disclosed. In a semiconductor device having a memory cell portion and a peripheral circuit portion, a refractory metal is used for the bitline instead of the usual polycide, to concurrently form a contact on each active region of an N-type and a P-type, then a landing pad is formed on the peripheral circuit portion when a bitline is formed on the memory cell portion. In such a process, a substantial contact hole for the interconnection is formed on the landing pad so that an aspect ratio of the contact can be lowered. Accordingly, when forming a metal interconnection, the contact hole for the interconnection is easily filled by Al reflow so that the coverage-step of the metal being depositing in the contact hole for the interconnection is enhanced, the contact resistance is reduced. Further, the reliability of the semiconductor device is improved.

Abstract: The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices.The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention.

Abstract: A method for manufacturing a transmission electron microscope analysis sample of a substrate containing an insulating body or an insulating sample includes the steps of: depositing a conductive material on the sample and then polishing the sample using a focused ion beam. The polishing step removes the conductive material from the analysis point of the sample, such that an electron projection and transmission path is formed through the sample at the analysis point. However, the conductive material is not removed from the remainder of the sample, not including the analysis point, thereby forming a ground path for any charges formed in the sample.

Abstract: A semiconductor device includes a source and a drain formed in a device region of a semiconductor substrate, and an electrode withdrawal portion having an impurity concentration higher than that of the device region. The electrode withdrawal portion is formed so as to adjoin either one of the source and drain. An electrode for the source or drain adjacent to the electrode withdrawal portion is used jointly as an electrode for the electrode withdrawal portion.

Abstract: In a plastic packaged semiconductor device, a chip support formed on the same lead frame as leads is disposed so as to extend over the surface of a semiconductor element, the chip support is bonded and fixed to the surface of a polyimide wafer coat on the semiconductor element by means of an insulating tape, the leads are brought into contact with the polyimide wafer coat on the semiconductor element without being fixed, the leads and the electrodes of the semiconductor element are connected by means of gold wires, and these are packaged by a packaging material. Generation of crack in the sealing material thereby prevented, and the thickness of the plastic packaged semiconductor device is reduced.

Abstract: A volatile memory initialization systems differentiates between a first class of reset causes requiring memory initialization and a second class of reset causes not requiring memory initialization. A register records the first and second classes of reset causes. A volatile memory initialization function is performed when a reset of the first class of reset causes is read from the register. The volatile memory initialization function is bypassed when a reset of the second class of reset causes is read from the register.

Abstract: The present invention is directed to an integrated circuit device having at least one memory section including a plurality of memory cells. The device includes an internal register to store an identification value which identifies the device on a bus. The device further includes interface circuitry, coupled to the bus, to receive identification information and a read request. The interface circuitry includes a plurality of output drivers and comparison circuitry. The output drivers are coupled to the bus to output data on the bus in response to the read request. The data is output synchronously with respect to first and second external clock signals when the comparison circuitry determines the identification information corresponds to the identification value.

Abstract: The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices.The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention.

Abstract: Of ends of a plurality of inner leads disposed around a semiconductor chip shaped substantially in the form of a rectangle, the ends of the inner leads, which correspond to the corners of the rectangle, are provided so as to approach in the direction of the semiconductor chip. Owing to the provision referred to above, bonding wires for connecting electrical connections between the semiconductor chip and the ends of the inner leads can be prevented from drifting upon a mold process.

Abstract: In a method for manufacturing a dielectric isolation substrate according to the present invention, during the process of pressing a semiconductor substrate (wafer), a dummy chip 103 is positioned toward the outside edge of the wafer with respect to the LSI chip 102, which is pressed into contact last, V-grooves 103A in the dummy chip 103 are formed to be deeper than V-grooves 102A in the LSI chip 102 so that voids can be effectively pushed into the dummy chip 103. Consequently, isolation of the LSI chip caused by voids can be prevented, thereby achieving an improvement in yield.

Abstract: A method for determining a position of track-0 and mapping tracks according thereto is disclosed. In a method for mapping tracks of a disk drive apparatus which uses a multiplatter system and stores track-0 information in a maintenance region, a head on a platter including track-0 is switched to sequentially search tracks along the surface of the platter from the track-0. When the head is positioned at an outer track or an inner track during track search, the head is switched to sequentially search tracks of the selected platter, and the track search for all the platters of multiple platters is repeated.

Abstract: In a process where a capacitor using a BST film for a dielectric film is incorporated into a DRAM, the film is selectively removed by wet etching for forming a contact hole. For this purpose, a bottom electrode is formed and then an amorphous film is formed on the entire surface of a silicon wafer. And after forming a crystalline top electrode on this film, lamp heating is performed to crystallize only the area that is in contact with the electrode. Then wet etching is performed using a solution of hydrogen and ammonium fluoride (1:2), which allows removing only the amorphous area selectively.

Abstract: The present invention discloses a method for making a dynamic random access memory by silicon-on-insulator comprising the steps of: dividing a cell area and a peripheral area on a first silicon substrate and recessing just the cell area where a memory device is formed; forming a first insulating layer by isolation of electrical elements in order to divide an active region and a passive region; forming and patterning a first conductive layer through a contact to which the active region and a capacitor are connected on the insulating layer to form a storage node; forming a dielectric layer of the capacitor on the storage node; forming and patterning a polysilicon layer on the dielectric layer to form a storage node; forming a second insulating layer on the plate node and planarizing the insulating layer by thermal treatment; forming a third conductive layer to a predetermined thickness on the planarized insulating layer; polishing and planarizing the third conductive layer by chemical-mechanical polishing techn