Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH4 to WF6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.

Abstract: Disclosed is a method and apparatus of securely providing data to a user's system. The data is encrypted so as to only be decryptable by a data decrypting key, the data decrypting key being encrypted using a first public key, and the encrypted data being accessible to the user's system, the method comprising the steps of: transferring the encrypted data decrypting key to a clearing house that possesses a first private key, which corresponds to the first public key; decrypting the data decrypting key using the first private key; re-encrypting the data decrypting key using a second public key; transferring the re-encrypted data decrypting key to the user's system, the user's system possessing a second private key, which corresponds to the second public key; and decrypting the re-encrypted data decrypting key using the second private key.

Abstract: A system for tailoring user queries and for categorizing and searching metadata about content provided on the internet and/or intranet for delivery in accordance with customized user profiles. The method and system categorizes query content and document content to facilitate the collection, storage and usage of same. Query content and document content are tokenized, vectorized, and provided for comparison processing by the inventive method.

Abstract: In a data communication network wherein broadcasted transmissions include a portion uniquely identifying the content of the following transmission and wherein transmissions are repeated at predetermined intervals, a communication unit for operating within the system includes a receiver, a processor, and memory for storing data and instructions for the processor. The receiver receives transmissions over the communication network. The communication unit receives a record command from a user that causes it to record the audio/video content being broadcasted during a subsequent transmission thereof. The memory includes space for storing the program that causes the communication unit to automatically record the transmission at the time the transmission is re-broadcasted.

Abstract: A software intelligent Agent, and rules provided thereto by a user, screen and process data objects, for example an e-mail message, in accordance with said rules. Actions taken by the Agent to process a data object in accordance with rules associated with the object are entered into an activity record and the activity record is injected into the body of the data object, for example pre-pended into an e-mail message as the first body part of the message. This obviates the need for a user to remember the rules or to remember what actions were taken by the Agent.

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.

Abstract: An on-line interactive catalog system having a plurality of catalog agent metaphors (CAM's), each comprising a set of components, portions of a knowledge representation and a design for the creation of components, facilitating the creation of different forms of interactions with an electronic catalog knowledge representation. The CAM's further provide a methodology in which rich knowledge representations about cataloged information can be created iteratively. The creation of the knowledge representation or information model for the electronic catalog is driven by a particular set of desired interactions, thereby providing a unique approach to the creation and dynamic maintenance of electronic catalogs, information models and user interfaces.

Abstract: The objective of the instant invention is to define a computer user interface display system that presents hierarchical data in an enhanced tree presentation control that blends the ease-of-use character of the familiar "tree presentation control" with a technique for navigating more complex lattice data structures, while at the same time providing more node information by displaying configured lattice-node labels along with the node's name. Thus a primary objective of this invention is to facilitate building, maintaining and using a multiple inheritance taxonomy such as a product catalog data base by means of a multi-navigation path browsing system, which is made possible through the capability of this system's multiple inheritance capability; with indicators in the tree view to indicate ancestors such as immediate parents and further removed ancestors.

Abstract: A method and apparatus for detecting opens and shorts in a metalization layer includes creating a reference feature list of opens features and at least two reference feature lists of shorts features included in a top surface metalization. A first of the at least two reference feature lists include shorts features having a first threshold and the second of the at least two reference feature lists include shorts features having a second threshold more aggressive than the first threshold. High numerical aperture (NA) illumination is used to produce a grey level image of the top surface metalization. A first image stream is produced from the grey level image using a first digital threshold suitable for use in detecting opens exclusive of shorts and then opens features are extracted. At least a second image stream and a third image steam are then produced from the grey level image using second and third digital thresholds, respectively, suitable for use in detecting shorts exclusive of opens.

Abstract: A method for patterning an insulative layer with high precision to accommodate the pitch reduction of wiring conductors and forming insulating layers that are superior in insulation performance, migration resistance, etc. is disclosed. According to the method, there are provided a first step of forming a pattern having openings on a surface by using a high resolution material, a second step of forming an insulating layer of a reliable second insulating material in spaces between the residual first resist material and a third step of removing the residual resist material. The pattern formation is preferably performed by using an ultraviolet-curable resin, to form a precision pattern. Since a highly reliable, thermosetting resin remains on the substrate in an actual product, superior properties of migration resistance and adhesiveness with the substrate can be obtained.

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the-hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.

Abstract: A method for thin film or semiconductor technology, is discussed in which a metallization layer can be provided on an insulating layer, allowing opening of through holes in the insulating layer simultaneously with the same mask. A substrate 1 has a first 3 and a second 4 insulating layer on its surface 2, a cover layer 5 on the second insulating layer 4, a structured mask layer 6 on the cover layer 5, and through openings 7 filled with metal and extending from the rear side of the substrate as far as the substrate surface 2. The mask layer 6 features openings in the areas facing the through openings 7 and in the areas to be covered with a metal layer 8. The cover layer 5 is opened in the areas which are not covered by the structured mask layer 6 by means of a first etching process. Following this, the second insulating layer 4 is laser ablated in the areas facing the filled through openings 7, using dielectric mask.

Abstract: An adhesive for bonding a die of an integrated circuit chip comprises an aryl cyanate (ester) resin alone and/or a diepoxide resin admixed with a hydroxymethylated phenolic resin or hydroxymethylated poly(hydroxystyrene) which can further contain an electrically or thermally conductive filler.

Abstract: A universal substrate includes an input/output (I/O) layer having a fixed I/O assignment of I/O locations for connection with a printed circuit board or the like. A chip receiving layer is provided for receiving one of at least two different but allied semiconductor chips, wherein each of the at least two different but allied chips include a set of bond pads and have a unique wire-out requirement. A first layer includes a plurality of bond pads and vias, the plurality of bond pads including at least two sets of bond pads, wherein each set is adapted for bond connection with a respective one of the at least two different semiconductor chips when received by said receiving means and further in accordance with a respective wire-out requirement.

Abstract: A method of performing electrochemistry processes on features and connectors of a substrate includes the application of a shorting layer across the connectors which are in electrical contact with the features, thereby shorting the features and creating an assemblage for which electricity is applied.

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten.

Abstract: A cutting assembly and an apparatus for self-aligned chamfering of a workpiece are disclosed. The chamfering apparatus includes a mechanism for releasably securing the workpiece in preparation for a chamfering thereof, a cutting assembly, and a mechanism for moving the cutting assembly proximate the securing mechanism between a first position and a second position, wherein the cutting assembly traverses along an edge portion of the workpiece to be chamfered.

Abstract: Disclosed is a reproducible process for making an SiO.sub.2 layer by thermal oxidation which assures an extremely uniform thickness of the SiO.sub.2 layer of approximately 1%. The process of the invention comprises the steps growing an initial layer of SiO.sub.2 to a defined minimal thickness by dry oxidation and increasing the thickness of the initial layer by simultaneous wet and dry oxidation until the desired final thickness is reached.

Abstract: A quick change holder for an inspection apparatus is maintained within the apparatus when a strip material retained within the holder is changed. The holder includes first and second panels that define a cavity therebetween that receives the strip material.