Abstract: A burnisher for disassociating undesirable material from a work piece includes a wire and a burnishing medium operably associated with the wire. The flexibility of the burnisher permits forces to be generated to disassociate the burnishing medium.

Abstract: A method for manufacturing a cap for use in a semiconductor package is disclosed. The semiconductor package includes a semiconductor chip and a substrate. The chip is mounted with the substrate at a chip locus. The method preferably comprises the steps of placing a slug in a die, and exercising the die to cold flow the slug to a predetermined cap configuration. The cap configuration includes a plurality of walls depending from a polygonal generally planar base and cooperating with the base to establish a well bounded by the walls and the base. The walls terminate in a plane, and the well clears the chip when the cap is mounted on the substrate at the chip locus. The invention further includes a cap for use in a semiconductor package. The cap comprises a structure cold flowed from a slug in a die to a predetermined cap configuration.

Abstract: A stacking system includes a frame having recesses therein used to partially define openings that permit gas generated during firing of a substrate within the space defined by the frame to escape without adversely affecting the substrate. A relatively thin tile placed on the frame provides the system with an additional level for substrates.

Abstract: A composition and methods for the use and manufacture thereof are provided for a polymeric dye. The composition comprises one or more aminoaromatic chromophores in conjunction with polymers having an anhydride group or the reaction products thereof. The composition is particularly useful as an underlaying antireflective coating with microlithographic photoresists for the absorbtion of near or deep ultraviolet radiation.

Abstract: An improved process for depositing a conductive thin film upon an integrated circuit substrate by collimated sputtering is disclosed. The sputtered films are alloys of aluminum; a preferred alloying metal is magnesium. The sputtered films of the invention have a more uniform orientation of grains than sputtered aluminum copper silicon alloy films. Such processes are especially useful in the fabrication of integrated circuit devices having aluminum alloy wiring elements.

Abstract: A mask for printing a pattern on a substrate comprises a sheet preferably of metal having a printing pattern thereon comprising through mask openings in the sheet. The through mask openings are interconnected by tabs or bridges which have a structure which provides a bending moment in a portion of the tab when a force is applied to the mask to force material to be deposited on the substrate through the mask openings. A preferred tab structure has a step shape and at least one through opening in the tab. The step shape and through mask opening both provide bending moments in the tab and the through opening also provides enhanced patterning definition because the deposition material flows both under the tab and through the through tab opening. The masks have a longer operating life than conventional masks and enhanced operating characteristics.

Abstract: Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.

Abstract: A composition and methods for the use and manufacture thereof are provided for a polymeric dye. The composition comprises one or more aminoaromatic chromophores in conjunction with polymers having an anhydride group or the reaction products thereof. The composition is particularly useful as an underlaying antireflective coating with microlithographic photoresists for the absorbtion of near or deep ultraviolet radiation.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and recording a plurality of values of the electrical characteristic as a function of time during etching. From the plurality of recorded values and corresponding times, instantaneous etch rates, average etch rates, and etching end points may be determined. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

Abstract: A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.

Abstract: An electrical probe card for parametric testing of microelectronics having reduced leakage current, includes a hydrophobic layer of a self curing silicone material coating the entire exposed surface of the ceramic card between exposed conductors. The hydrophobic layer has a thickness of less than 1 micrometer, preferably less than 0.1 micrometer and most preferably between 0.01 and 0.001 micrometers. The hydrophobic layer does not interfere with subsequent soldering to the contacts on the card, is inexpensive, solvent resistant and easily applied to new and pre-existing probe cards. The method of application involves applying an excess of the hydrophobic silicone material in its uncured state, followed by vigorously wiping excess material off to thin the layer, produce a good bond and clean the exposed conductors on the probe card.

Abstract: A laser ablation apparatus and method removes undesired portions of a workpiece. An industrial laser generates a beam of optical energy and directs the beam at the workpiece. A mechanism in the path of the beam for shapes the cross-section of the beam and includes first and second linear actuators on opposite sides of the beam path. Each of the actuators includes a plurality of linear members, with each linear member being adjacent to and in contact with another linear member, and means for individually inserting and retracting each of said members into and out of said beam path a desired distance to thereby shape the beam so as to ablate only undesired portions of the workpiece.