Abstract: Example wing-shaped support members for enhancing semiconductor device probes and methods to form the same are disclosed. A disclosed example semiconductor device probe includes a finger having a first end and a second end. The example probe further includes a tip having a base and a pointed end. The base is joined to the first end of the finger and the tip tapers from the base to the pointed end. The probe also includes a support member on the tip to increase a rigidity of the tip.

Abstract: A packaged semiconductor device (200) with a substrate (220) having, sandwiched in an insulator (221), a flat sheet-like sieve member (240) made of a non-linear material switching from insulator to conductor mode at a preset voltage. Both member surfaces are free of indentations; the member is perforated by through-holes, which are grouped into a first set (241) and a second set (242). Metal traces (251) over one member surface are positioned across the first set through-holes (241); each trace is connected to a terminal on the substrate top and, through the hole, to a terminal on the substrate bottom. Analogous for metal traces (252) over the opposite member surface and second set through-holes (242). Traces (252) overlap with a portion of traces (252) to form the locations for the conductivity switches, creating local ultra-low resistance bypasses to ground for discharging overstress events.

Abstract: The invention discloses integrated circuits (ICs), molded IC packages, and to leadframe arrays, package arrays and methods for their manufacture. Leadframe arrays and package arrays used for the manufacture of IC packages by transfer molding processes include a locking feature adapted for encapsulation. The locking feature is situated in a strap of the leadframe array overlying a gate between mold cavities. The strap lock formed by curing encapsulant in the locking feature of the strap strengthens the resulting package array and provides improved mold extraction and handling characteristics.

Abstract: A leadframe with a structure made of a base metal (105), wherein the structure has a plurality of surfaces. On each of these surfaces are metal layers in a stack adherent to the base metal. The stack comprises a nickel layer (201) in contact with the base metal, a palladium layer (202) in contact with the nickel layer, and an outermost tin layer (203) in contact with the palladium layer. In terms of preferred layer thicknesses, the nickel layer is between about 0.5 and 2.0 ?m thick, the palladium layer between about 5 and 150 nm thick, and the tin layer less than about 5 nm thick, preferably about 3 nm. At this thinness, the tin has no capability of forming whiskers, but offers superb adhesion to polymeric encapsulation materials, improved characteristics for reliable stitch bonding as well as affinity to reflow metals (solders).

Abstract: A semiconductor device without cantilevered leads uses conductive wires (120) to connect the chip terminals to the leads (110), and a package compound (140) to encapsulate the chip surface (101a) with the terminals, the wires, and the lead surfaces with the attached wires. The chip surface (101b) opposite the terminals together with portions (103) of the chip sidewalls protrude from the package, allowing an unimpeded thermal contact of the protruding chip surface to a substrate (201) to optimize the thermal flux from the chip to the substrate. Solder bodies (250) attached to the compound-free lead surfaces (113b) can be connected to the substrate so that the solder bodies are as elongated as the protruding chip height, facilitating the void-free distribution of an underfill compound into the space between chip and substrate, and improving the absorption of thermomechanical stresses during device operation.

Abstract: A QFN package and method of making same is provided comprising a substrate having a metal line extending from a connection element on a perimeter region of the substrate to a high current contact pad on interior region of the substrate. A semiconductor chip having an active surface generally faces the interior region of the substrate, wherein a heat-dissipating patterned metal distribution layer is formed over the active surface and electrically connected to an active component thereon. A solder strip electrically and thermally connects the high current contact pad and the metal distribution layer, and a mold compound generally encapsulates the semiconductor chip. The solder strip is generally uniform in depth and surface area, wherein low electrical resistance and inductance is provided between the high current contact pad and the metal distribution layer. An integrated heat sink may be further formed or placed on a passive surface of the chip.

Abstract: A method for designing an integrated circuit including estimating a test escape rate for tests of interest, a test coverage calculator and a system for estimating a test escape rate for tests of interest associated with a portion of an integrated circuit (IC) die. In one embodiment the method includes the step of: estimating a test escape rate for a set of fault tests to be performed on an IC under design based on an estimated yield and a combined coverage of the set of fault tests; the combined coverage accounting for overlapping coverage among the set of fault tests.

Abstract: In a method and system for transferring at least one of power and ground signal between a die and a package base of a semiconductor device, a connector is formed there between. The connector, which is disposed above the die attached to the package base, includes a center pad electrically coupled to the die by a plurality of conductive bumps and a finger extending outward from the center pad towards the package base. The finger is electrically coupled to the package base by a conductive pad. A plurality of bond wires are formed to electrically couple the package base and the die. A resistance of a conductive path via the connector is much less than a resistance of a conductive path via any one of the plurality of bond wires to facilitate an efficient transfer of the at least one of power and ground signal.

Abstract: A semiconductor device having an insulating substrate with differentially plated metal and selective solder. Chip 221 with contact studs 223 is attached onto the traces 203 on tape 101. The traces, which are unprotected by soldermask 110, have solder on the top surface, but not on the sidewalls. The sidewalls of the traces are at right angles to the trace top, giving the trace a rectangular cross section. Consequently, the area for attaching stud 223 is maximized. At the same time, the differential plating method of trace metal 203 and through-hole metal 206 allows different metal thicknesses and provides independent control of the trace aspect ratio for low electrical resistance and trace fatigue.

Abstract: The objective of the invention is to provide a semiconductor device manufacturing method with which the generation of burrs can be suppressed while increasing the singulation speed of the package. In a manufacturing method of a QFN package of the present invention, a molding prepared by sealing a lead frame with plural semiconductor chips carried on it en bloc with a resin; the operation comprises the following processing steps: a first singulation processing step S101 in which the molding is half-cut along the cutting plane; a de-flashing processing step S102 in which the burrs on the cut portion of the half-cut molding are removed; and a second singulation processing step S103 in which the de-flashed molding is completely cut along the cutting plane.

Abstract: A semiconductor device has a chip (101) with gold studs (212) assembled on a tape substrate (102), which has solder balls (103) for attachment to external parts. The tape substrate (about 30 to 70 ?m thick) has on its first surface first copper contact pads (221) covered with a continuous thin nickel layer (222) of about 0.04 to 0.12 ?m thickness. Gold including stud (212) is contacting the nickel. On the second substrate surface are second copper contact pads (231) covered with an alloy layer (about 2 to 3 ?m thick) including gold, copper/tin alloys, and copper/nickel/tin alloys; the alloys are metallurgically attached to the second copper pad and substantially free of unalloyed nickel. A reflow body (103) comprising tin is metallurgically attached to the alloy layer of each second pad.

Abstract: An integrated circuit package that comprises a lead frame, an integrated circuit located on the lead frame and a shunt resistor coupled to the lead frame and to the integrated circuit. The shunt resistor has a lower temperature coefficient of resistance than the lead frame, and the lead frame has a lower resistivity than the shunt resistor. The shunt resistor has a low-resistance coupling to external leads of the lead frame, or, the shunt resistor has its own integrated external leads.

Abstract: A thermal management configuration for a flip chip semiconductor device is disclosed. The device includes a high power silicon based die having a metal bonding surface. A plurality of interconnects are formed on the metal surface and connected to a substrate. A plurality of thermal management stud bumps are formed on the metal bonding surface, the thermal management stud bumps positioned distinct from the interconnects and local to die hot spots, exposed ends of the thermal management stud bumps spaced from the substrate.

Abstract: A method for fabricating ICs including via-first through substrate vias (TSVs) and ICs and electronic assemblies therefrom. A substrate having a substrate thickness including a top semiconductor surface and a bottom surface is provided including at least one embedded TSV including a dielectric liner and an electrically conductive filler material formed on the dielectric liner. A portion of the bottom surface of the substrate is mechanically removed to approach but not reach the embedded TSV tip. A protective substrate layer having a protective layer thickness remains over the tip of the embedded TSV after the mechanical removing. Chemical etching exclusive of mechanical etching for removing the protective substrate layer is used form an integral TSV tip that has an exposed tip portion that generally protrudes from the bottom surface of the substrate. The chemical etching is generally a three step chemical etch.

Abstract: A low-viscosity resin is deposited using an apparatus with a movable and heatable wheel and a heater stage. A tape is provided, which includes a layer (140) of an adhesive polymeric resin and a film (141) of an inert plastic compound. The tape is wrapped around the wheel (150) so that the film touches the wheel and the layer faces away from the wheel. The wheel is heated to a temperature high enough to transits the polymeric resin into a low-viscosity state. A substrate strip (110), which has been assembled with a plurality of semiconductor chips (101) connected to the substrate by bonding wires (120), is placed on a station (130) also heated to the transition temperature. The wheel is then moved to roll the low viscosity resin on the chips and wires along the strip, while the inert film is separated. The chips and wires are thus encapsulated.

Abstract: A lead frame (410) including a die pad (100) for mounting at least one integrated circuit (405) thereon and a plurality of lead fingers (413). The die pad (100) includes a metal including substrate (105) having a periphery that includes a plurality of sides (111-114), an intersection of the sides forming corners (115). A first plurality of grooves including least one groove (106) is formed in a top side surface of the substrate and is associated with each of the corners (115). The groove (106) has a dimension oriented at least in part at an angle of 75 to 105 degrees relative to a bisecting line (118) originating from the corners (115). A lead-frame-based packaged semiconductor device (400) includes a lead frame (410) including at least one metal comprising die pad (418) and a plurality of lead fingers (413) around the die pad (418). At least one integrated circuit (405) is mounted on the top surface of the die pad (418), and electrically connected to the plurality of lead fingers (413).

Abstract: A packaged surface-mount semiconductor device has the outer, un-encapsulated lead segments structured in five adjoining portions: The first portion protrudes from the encapsulation about horizontally; the second portion forms a convex bend downwardly; the third portion is approximately straight downwardly; the fourth portion forms a concave bend upwardly; and the fifth portion is straight horizontally. Each segment has across the width a first groove in the third portion, either on the bottom surface or on the top surface. Preferably, the groove is about 2 leadframe thicknesses vertically over the bottom surface of the fifth lead portion. When stamped, the groove may have an angular outline about 5 and 50 ?m deep; when etched, the groove may have an approximately semicircular outline about 50 to 125 ?m deep. A second groove may be located in the second segment portion; a third groove may be located in the transition region from the third to the fourth segment portions.

Abstract: A semiconductor device assembly (200) includes a workpiece (205) having a surface including a die attach region corresponding to regions under an integrated circuit (IC) die 210. The die attach region of workpiece (205) includes non-noble metal surfaces (215) and a plurality of flip chip (PC) pads at pad locations (214). A solder mask layer (207) is on a surface of the workpiece (205) outside the die attach region. The non-noble metal surfaces (215) in the die attach region include an adhesion promoter layer (221), wherein the adhesion promoter layer 221 is absent from the plurality of PC pads (214). An integrated circuit (IC) die (210) having a plurality of bumps (211) bonded in a flip chip arrangement to the workpiece (205). An underfill material (232) fills a space between the bumped IC die (210) and the workpiece (205).

Abstract: A semiconductor device comprises a die having a first surface and a second surface, a first leadframe connected to the first surface and the second surface, and a second leadframe connected to the first surface.

Abstract: A method and a system for defining groups of tests that may be concurrently performed or overlapped are provided. Channel-independent test groups are determined such that each group includes tests that the input/output channels may be utilized simultaneously without conflicts. The channel-independent test groups are divided into block-under-test (BUT) conflict test groups and total-independence test groups. The total-independence test groups may be performed concurrently. Performance of the BUT-conflict test groups may be overlapped such that the input/output channels are used concurrently, but the execution of the tests by the blocks of the device-under-test (DUT) is performed sequentially.