Abstract: A film having filling capability of a patterned recess on a surface of a substrate is deposited by forming a viscous material in a gas phase by striking a plasma in a chamber filled with a volatile precursor that can be polymerized within certain parameter ranges which include a partial pressure of the precursor during a plasma strike and substrate temperature.
Abstract: Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.
Type:
Grant
Filed:
January 17, 2023
Date of Patent:
April 30, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Ivo Johannes Raaijmakers, Jan Willem Maes, Werner Knaepen, Krzysztof Kamil Kachel
Abstract: Methods for selective deposition of metal oxide films on metal or metallic surfaces relative to oxide surfaces are provided. An oxide surface of a substrate may be selectively passivated relative to the metal or metallic surface, such as by exposing the substrate to a silylating agent. A metal oxide is selectively deposited from vapor phase reactants on the metal or metallic surface relative to the passivated oxide surface.
Type:
Grant
Filed:
March 31, 2020
Date of Patent:
April 23, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Andrea Illiberi, Michael Eugene Givens, Shaoren Deng, Giuseppe Alessio Verni
Abstract: A substrate supporting plate that may prevent deposition on a rear surface of a substrate and may easily unload the substrate. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. An edge portion of a top surface of the substrate mounting portion may be anodized. A central portion of the top surface of the substrate mounting portion may not be anodized.
Type:
Grant
Filed:
November 9, 2020
Date of Patent:
April 23, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Yong Min Yoo, Jong Won Shon, Seung Woo Choi, Dong Seok Kang
Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.
Type:
Grant
Filed:
May 16, 2022
Date of Patent:
April 23, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen
Abstract: The present disclosure is generally directed to a solid source precursor delivery system. More specifically, the present disclosure is directed to a solid source precursor vessel that can be utilized to vaporize a supply of solid precursor stored within the vessel. The disclosed source vessel utilizes a plurality of individual cavities or pockets within the interior of the vessel. Each individual pocket may be loaded with precursor. In an arrangement, the pockets may be loaded with pre-formed blocks of compressed precursor material that typically have a higher density than was previously achieved when packing solid precursor within a source vessel. The increased density of the solid precursor material increases a capacity of the source vessel resulting in longer intervals between replacement and/or refilling the source vessel.
Type:
Grant
Filed:
April 26, 2021
Date of Patent:
April 16, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Jianqiu Huang, Ankit Kimtee, Sudhanshu Biyani, Jonathan Robert Bakke, Eric James Shero
Abstract: Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 ??-cm at a film thickness of less than 50 nanometers.
Type:
Grant
Filed:
July 18, 2022
Date of Patent:
April 16, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Timo Hatanpää, Katja Väyrynen, Mikko Ritala, Markku Leskelä
Abstract: A susceptor can include a generally circular shape and may include an inner and outer susceptor. The outer susceptor can include a support region having one or more support mechanisms as well as a channel region extending from the region boundary to an outer radial boundary radially inward of an outer edge of the susceptor, the channel region can include a plurality of channels extending radially from the region boundary to the outer radial boundary. The inner susceptor can include a second plurality of channels extending from the inner radial boundary to an edge of the inner susceptor.
Type:
Grant
Filed:
January 15, 2020
Date of Patent:
April 16, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Uday Kiran Rokkam, Sam Kim, Saket Rathi, Dakai Bian
Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.
Type:
Grant
Filed:
March 17, 2022
Date of Patent:
April 16, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Amir Kajbafvala, Yanfu Lu, Robinson James, Caleb Miskin
Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.
Type:
Grant
Filed:
March 4, 2021
Date of Patent:
April 16, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Eiichiro Shiba, Yoshinori Ota, René Henricus Jozef Vervuurt, Nobuyoshi Kobayashi, Akiko Kobayashi
Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.
Type:
Grant
Filed:
October 24, 2022
Date of Patent:
April 9, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Katja Väyrynen, Timo Hatanpää, Mikko Ritala, Markku Leskelä
Abstract: A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.
Type:
Grant
Filed:
August 31, 2021
Date of Patent:
April 9, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Tom E. Blomberg, Varun Sharma, Jan Willem Maes
Abstract: A semiconductor processing device is disclosed. The device can include a reactor and a solid source vessel configured to supply a vaporized solid reactant to the reactor. A process control chamber can be disposed between the solid source vessel and the reactor. The device can include a valve upstream of the process control chamber. A control system can be configured to control operation of the valve based at least in part on feedback of measured pressure in the process control chamber.
Type:
Grant
Filed:
September 8, 2020
Date of Patent:
April 2, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Jereld Lee Winkler, Eric James Shero, Carl Louis White, Shankar Swaminathan, Bhushan Zope
Abstract: Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.
Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.
Abstract: A fixture is provided. The fixture includes a base, a turntable, a first sensor, and a second sensor. The turntable is supported on the base, is rotatable about a rotation axis, and is configured to slidably seat a susceptor assembly for rotation about the rotation axis. The first sensor is fixed relative to the base, is radially offset from the rotation axis, and is configured to determine ex-situ runout of the susceptor assembly. The second sensor is fixed relative to the first sensor, is axially offset from the first sensor, and is configured to determine ex-situ wobble of the susceptor assembly. Fixture arrangements and methods of determining ex-situ runout and ex-situ wobble of susceptor assemblies for semiconductor processing systems are also described.
Type:
Grant
Filed:
December 13, 2021
Date of Patent:
April 2, 2024
Assignee:
ASM IP Holding B.V.
Inventors:
Aniket Nitin Patil, Saket Rathi, Sam Kim, Shiva K. T. Rajavelu Muralidhar
Abstract: Examples of a predictive maintenance method includes determining whether analog data measured in a substrate treatment that has used a recipe exceeds an allowable threshold which corresponds to the recipe and has been determined beforehand, and notifying, in a case where it is determined that the analog data exceeds the allowable threshold in the determination, a user that a relating module which has been associated with the analog data beforehand has deteriorated.
Abstract: An apparatus and method are disclosed for monitoring and/or detecting concentrations of a chemical precursor in a reaction chamber. The apparatus and method have an advantage of operating in a high temperature environment. An optical emissions spectrometer (OES) is coupled to a gas source, such as a solid source vessel, in order to monitor or detect an output of the chemical precursor to the reaction chamber. Alternatively, a small sample of precursor can be periodically monitored flowing into the OES and into a vacuum pump, thus bypassing the reaction chamber.
Abstract: Examples of a substrate processing apparatus includes a chamber, an upper cover provided inside the chamber, an electrostatic chuck which includes an annular portion of a dielectric body and an embedded electrode embedded into the annular portion, the electrostatic chuck being provided inside the chamber, and a plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck, wherein the annular portion includes an annular first upper surface located immediately below the upper cover, and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than a height of the first upper surface.