Patents Assigned to ASM IP Holding B.V.
  • Method of depositing material on stepped structure
    Patent number: 11827981
    Abstract: A method for depositing material is disclosed. An exemplary method includes positioning a substrate provided with a stepped structure comprising a top surface, a bottom surface, and a sidewall in a reaction chamber; controlling a pressure of the reaction chamber to a process pressure; providing a precursor; providing a reactant; and, providing a plasma with a RF plasma power, wherein by simultaneously providing the precursor, the reactant, and the plasma while controlling the process pressure to less than or equal to 200 Pa and controlling the RF plasma power to more than or equal to 0.21 W per cm2 the material is deposited on the top surface, the bottom surface, and the sidewall of the stepped structure.
    Type: Grant
    Filed: October 11, 2021
    Date of Patent: November 28, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Kentaro Kojima, Takeru Kuwano, Eiichiro Shiba
  • Selective passivation and selective deposition
    Patent number: 11830732
    Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.
    Type: Grant
    Filed: September 9, 2021
    Date of Patent: November 28, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Jan Willem Hub Maes, Michael Eugene Givens, Suvi P. Haukka, Vamsi Paruchuri, Ivo Johannes Raaijmakers, Shaoren Deng, Andrea Illiberi, Eva E. Tois, Delphine Longrie, Viljami Pore
  • Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
    Patent number: 11827978
    Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.
    Type: Grant
    Filed: March 7, 2022
    Date of Patent: November 28, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Eric Christopher Stevens, Bhushan Zope, Shankar Swaminathan, Charles Dezelah, Qi Xie, Giuseppe Alessio Verni
  • Method for forming barrier layer and method for manufacturing semiconductor device
    Patent number: 11830738
    Abstract: In a method for forming a barrier layer, the barrier layer is formed on a base layer having a three-dimensional structure before a dopant-containing layer is formed on the base layer. At this time, at least one of a film thickness, a film quality, and a film type of the barrier layer is controlled in a height direction of the three-dimensional structure by using an atomic layer deposition (ALD) process.
    Type: Grant
    Filed: April 1, 2021
    Date of Patent: November 28, 2023
    Assignee: ASM IP Holding B.V.
    Inventor: Ryu Nakano
  • Fluorine-containing conductive films
    Patent number: 11823976
    Abstract: An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.
    Type: Grant
    Filed: September 15, 2022
    Date of Patent: November 21, 2023
    Assignee: ASM IP Holding, B.V.
    Inventors: Tom E. Blomberg, Linda Lindroos, Hannu Huotari
  • Substrate carrier apparatus, substrate processing apparatus, and method of adjusting temperature of susceptor
    Patent number: 11823873
    Abstract: Examples of a substrate processing apparatus includes a substrate carrier apparatus including a shaft, at least one carrier arm that is fixed to the shaft and rotates as the shaft rotates, and at least one thermometer fixed to the carrier arm, a susceptor, a heater that heats the susceptor, a temperature regulator that controls the heater, and a control unit that acquires a measured temperature, which is a surface temperature, of the susceptor obtained by the thermometer by bringing the carrier arm close to the susceptor and control the temperature regulator.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: November 21, 2023
    Assignee: ASM IP Holding B.V.
    Inventor: Kazuhiro Nishiwaki
  • Atomic layer deposition of rhenium containing thin films
    Patent number: 11821084
    Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.
    Type: Grant
    Filed: September 23, 2021
    Date of Patent: November 21, 2023
    Assignee: ASM IP Holding, B.V.
    Inventors: Jani Hamalainen, Mikko Ritala, Markku Leskela
  • Method for forming precoat film and method for forming silicon-containing film
    Patent number: 11821078
    Abstract: A method for forming a precoat film on a metal surface in a chamber before forming a silicon-containing film having an identical composition system with that of the precoat film on a substrate in the chamber using a PECVD method, wherein the precoat film is formed using a PEALD method in which a first gas and a second gas are supplied into the chamber by shifting timing of supply, the PEALD method comprises an adsorption step comprising supplying the first gas into the chamber so that the source gas component adsorbs on the metal surface, a first purge step comprising discharging an excessive source gas component not adsorbed on the metal surface, and a precoat film forming step comprising supplying the second gas into the chamber and applying high-frequency power to generate plasma in the reactant gas component in the second gas.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: November 21, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Takeru Kuwano, Eiichiro Shiba, Toshikazu Hamada, Yoshinori Ota
  • Substrate processing apparatus
    Patent number: 11823876
    Abstract: A substrate processing apparatus capable of processing a thin film to have improved quality through uniform exhaustion includes: a substrate supporting unit; a processing unit on the substrate supporting unit; an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit; an exhaust port connected to at least a portion of the exhaust unit; and a flow control unit disposed in an exhaust channel from a space inside the exhaust unit to the exhaust port.
    Type: Grant
    Filed: September 4, 2020
    Date of Patent: November 21, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: ChangMin Lee, WonKi Jeong
  • Thin film forming method
    Patent number: 11823866
    Abstract: A substrate processing method for filling a gap without seams or voids comprising: providing a substrate with a gap in a reaction chamber, pumping down the reaction chamber to a pressure at or below 5 Torr and filling the gap with a film by alternately and sequentially supplying a precursor, a reactant and a radio frequency electromagnetic radiation comprising a relatively high radio frequency component and a relatively low radio frequency component.
    Type: Grant
    Filed: March 30, 2021
    Date of Patent: November 21, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: SungKyu Kang, JongWan Choi, YoungHoon Kim, HieChul Kim, KyungEun Lee, TaeHee Yoo
  • Method for filling a gap in a three-dimensional structure on a semiconductor substrate
    Patent number: 11814728
    Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.
    Type: Grant
    Filed: April 21, 2021
    Date of Patent: November 14, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: KiKang Kim, HakYong Kwon, HieChul Kim, SungKyu Kang, SeungHwan Lee, SungBae Kim, JongHyun Ahn, SeongRyeong Kim, KyuMin Kim, YoungMin Kim
  • Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
    Patent number: 11814715
    Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.
    Type: Grant
    Filed: August 19, 2022
    Date of Patent: November 14, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Katja Väyrynen, Timo Hatanpää, Anton Vihervaara, Mikko Ritala, Markku Leskelä
  • Systems and methods for atomic layer deposition
    Patent number: 11814727
    Abstract: An atomic layer deposition (ALD) method can include pulsing a first reactant vapor into a reactor assembly. The first reactant vapor is supplied to a first reactant gas line. An inactive gas is supplied to a first inactive gas line at a first flow rate. The first reactant vapor and the inactive gas are fed to the reactor assembly by way of a first feed line. The reactor assembly is purged by supplying the inactive gas to the first inactive gas line at a second flow rate higher than the first flow rate. A first portion of the inactive gas can be fed back along a diffusion barrier portion of the first reactant gas line to provide an inert gas valve (IGV) upstream of the first inactive gas line. A second portion of the inactive gas can be fed to the reactor assembly by way of the first feed line.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: November 14, 2023
    Assignee: ASM IP Holding B.V.
    Inventor: Eric Jen Cheng Liu
  • Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
    Patent number: 11814747
    Abstract: Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.
    Type: Grant
    Filed: April 15, 2020
    Date of Patent: November 14, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: John Tolle, Joseph P. Margetis
  • Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
    Patent number: 11810788
    Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: November 7, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Jerry Peijun Chen, Fred Alokozai
  • Substrate processing apparatus and method
    Patent number: 11804388
    Abstract: A substrate processing apparatus, comprising a substrate support (32) provided with a support surface (34) for supporting a substrate or a substrate carrier (24) thereon and a support heater (50) constructed and arranged to heat the support surface (34). The apparatus comprises a heat shield constructed and arranged to cover and shield the substrate support (32) when no substrate or substrate carrier (24) is on the support surface.
    Type: Grant
    Filed: May 19, 2021
    Date of Patent: October 31, 2023
    Assignee: ASM IP Holding B.V.
    Inventor: Theodorus Oosterlaken
  • Substrate processing apparatus
    Patent number: 11804364
    Abstract: A substrate processing apparatus capable of locally controlling a plasma intensity and improving thin film properties and thickness uniformity includes: a power supply unit, a processing unit electrically connected to the power supply unit, and a substrate support unit below the processing unit, wherein the substrate support unit includes a first ground electrode and a second ground electrode.
    Type: Grant
    Filed: May 4, 2021
    Date of Patent: October 31, 2023
    Assignee: ASM IP Holding B.V.
    Inventor: ChangMin Lee
  • Selective layer formation using deposition and removing
    Patent number: 11804373
    Abstract: Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.
    Type: Grant
    Filed: September 23, 2022
    Date of Patent: October 31, 2023
    Assignee: ASM IP Holding, B.V.
    Inventors: Eva E. Tois, Viljami J. Pore
  • Chemical treatment, deposition and/or infiltration apparatus and method for using the same
    Patent number: 11802338
    Abstract: The disclosure relates to a chemical deposition, treatment and/or infiltration apparatus for providing a chemical reaction on and/or in a surface of a substrate. The apparatus may have a top and a bottom reaction chamber part forming together a closable reaction chamber and an actuator constructed and arranged for moving the top and bottom reaction chamber parts with respect to each other from a closed position to an open position so as to allow access to an interior of the reaction chamber. A top substrate holder is connected to the top reaction chamber part to hold a substrate at least when the reaction chamber is in the open position and a bottom substrate holder is connected to the bottom reaction chamber part to hold the substrate when the reaction chamber is in the closed position.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: October 31, 2023
    Assignee: ASM IP Holding B.V.
    Inventor: Robert Huggare
  • Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
    Patent number: 11798834
    Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.
    Type: Grant
    Filed: May 11, 2022
    Date of Patent: October 24, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Zecheng Liu, Viljami Pore