Patents Assigned to Ball Semiconductor, Inc.
  • Patent number: 6430334
    Abstract: A system and method of optical switching utilizing a reflection device, the switch is disclosed. The system can include: an optical transmission path having an optical transmission medium, an input-side end and a first and a second output-side end; a radiation source associated with said input-side end for emitting a primary optical signal being coupled into said transmission path; a reflection device with the ability to be turned on and off selectively for receiving the primary optical signal and converting the primary optical signal into a secondary, modulated optical signal being reflected and coupled back into the second output-side end when the reflection device is on and wherein the primary optical signal is coupled into the first output-side end when the reflection device is off. The optical switch can contain mirrors that turn on and off, or are fixed in place while the switch is movable.
    Type: Grant
    Filed: April 25, 2000
    Date of Patent: August 6, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Akira Ishikawa, Takashi Kanatake, Wenhui “Bill” Mei
  • Patent number: 6425669
    Abstract: A photolithography system and method for providing a pattern to a subject such as a wafer is provided. The system includes a pixel panel, such as a digital mirror device or a liquid crystal display, for generating for creating a plurality of pixel elements of the pattern. The pixel elements are simultaneously directed to a first site of the subject by a lense system. The system also includes a manipulator for moving the pixel elements, relative to the subject, to a second site of the subject so that a portion of the second site overlaps a portion of the first site.
    Type: Grant
    Filed: May 24, 2000
    Date of Patent: July 30, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Wenhui Mei, Takashi Kanatake, Karlton Powell
  • Patent number: 6426280
    Abstract: A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and doping powder. The semiconductor spheres and dopant powder are then directed to a chamber defined within an enclosure. The chamber maintains a heated, inert atmosphere with which to diffuse the dopant to the semiconductor spheres.
    Type: Grant
    Filed: January 25, 2001
    Date of Patent: July 30, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Evangellos Vekris, Nainesh J. Patel, Murali Hanabe
  • Patent number: 6423056
    Abstract: A method of tumor ablation using injectable thermal-sensing balls. A catheter system (115) is used to inject a slurry (134) of thermal-sensing balls (136) into a tumor (122) located in, for example, a liver (120). The catheter system (115) comprises a catheter (128) and a specialized syringe (129) consisting of a housing (130) and a plunger (132). The housing (130) includes a cylindrical chamber having the slurry (134) of thermal-sensing balls (136). The catheter (128) is inserted retrograde into the femoral artery and passed to the site of the tumor (122). The hepatic artery (124) branches into smaller vessels, one of which is a tumor artery (126) which feeds the tumor (122). The tip of the catheter (128) is placed in the tumor artery (126) guided by conventional fluoroscopy. The injected balls (136) then receive energy from an external control system (110). The system (110) comprises a control panel (114) as an operator interface for controlling the system (110) and reading data therefrom.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: July 23, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Akira Ishikawa, Nabuo Takeda, Suzanne I. Ahn, Samuel S. Ahn, Steven R. Hays, F. Andrew Gaffney
  • Patent number: 6423974
    Abstract: A solid state X-ray detector (106) is disclosed which is comprised of a plurality of Spherical ICs (202)-(208) disposed on a substrate (210). The Spherical ICs each have a plurality of detector picture elements (pixels) (302) disposed on the surface thereof. Each of the pixels (302) is formed from a layer of hydrogenated amorphous silicon (502) with a heavy metal layer (504) of molybdenum (Mo) disposed thereon as the cathode and a metal layer (508) disposed on the lower surface thereof. The cathode is reverse biased and X-rays impinging thereon will cause a transfer of electron-holes to the lower plate, which are stored on a capacitor (608). The electrons are accumulated over a predetermined period of time and then sampled and processed for output on a display (12) in real time or for storage of a digital value in a memory (114).
    Type: Grant
    Filed: May 28, 1999
    Date of Patent: July 23, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Akira Ishikawa, Nabuo Takeda, Suzanne I. Ahn, Steven R. Hays, Alex Freeman
  • Publication number: 20020092993
    Abstract: A method for scaling a pixel location in a digital photolithography system by rotating a pixel panel is provided. The method determines the angle of rotation of the pixel panel relative to a subject and calculates the original location of the pixel to be scaled. The method calculates the desired location of the pixel and determines the angle through which the pixel panel should be rotated to align the pixel with the desired location in a first dimension. The scan rate of the pixel panel and the subject is altered to align the pixel with the desired location in a second dimension.
    Type: Application
    Filed: December 19, 2001
    Publication date: July 18, 2002
    Applicant: Ball Semiconductor, Inc.
    Inventors: Takashi Kanatake, Wenhui Mei, Akira Ishikawa
  • Patent number: 6415184
    Abstract: A ball semiconductor for stimulating a mass of nervous system brain tissue for therapeutic purposes. The ball (120) is embedded in a mass of nervous system tissue (215) of a brain. Electrical pulses generated and transmitted to the ball (120) by a remote electrical pulse generator system (140) are picked up by a receiving antenna of the ball (120), and are applied to an electrode pair of the ball (120) to cause the mass of nervous system tissue (215) of the brain located between output pads of the electrode to become stimulated, as therapy for a pathological condition.
    Type: Grant
    Filed: January 6, 2000
    Date of Patent: July 2, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Akira Ishikawa, Nabuo Takeda, Suzanne I. Ahn, Samuel S. Ahn, Steven R. Hays, F. Andrew Gaffney
  • Patent number: 6398710
    Abstract: A radiation dosimetry system (110) using miniature implanted transponder balls. A patient having a tumor that is the target of the radiation treatment lies in a treatment area with the tumor positioned beneath a target (112) used for alignment purposes. The system (110) is controlled and monitored by a CPU (114) which receives instructions from a radiologist operating a control panel (116), and displays control parameters, data and graphics to the radiologist on a display (118). The CPU (114) controls an RF system operating through a broad-band antenna (120) and directed at the target area (112). The CPU (114) controls operation of a radiation source (122), which may be a conventional linear accelerator, for directing radiation at the target area (112). The radiation source (122) includes a collimator (124) or similar apparatus for shaping a radiation beam for accurate application to the target area (112).
    Type: Grant
    Filed: January 6, 2000
    Date of Patent: June 4, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Akira Ishikawa, Nabuo Takeda, Suzanne I. Ahn, Samuel S. Ahn, Steven R. Hays, F. Andrew Gaffney
  • Publication number: 20020063351
    Abstract: A system and method for making very small (e.g., 1 millimeter diameter) spherical shaped devices is disclosed. The system includes a supply system for providing predetermined amounts of raw material into a chamber, which is used for melting the raw material. The melted raw material is then provided to a dropper for measuring predetermined amounts of the melted raw material (droplets) and releasing the droplets into a drop tube, where they are cooled and solidified into spherical shaped silicon devices. The system includes a container of silicon powder in which the solidified spherical shaped devices are received from the drop tube, the container including a stirring mechanism for agitating the silicon powder.
    Type: Application
    Filed: February 13, 2002
    Publication date: May 30, 2002
    Applicant: Ball Semiconductor, Inc.
    Inventors: Murali Hanabe, Nainesh J. Patel
  • Patent number: 6383287
    Abstract: A system and method for performing diffusion on a three-dimensional substrate is provided. The system includes a furnace for providing a doped (e.g., p-type) molten semiconductor material and a dropper for converting the molten semiconductor material into a series of uniformly sized droplets. The droplets are then provided to a first tube where they solidify into a semiconductor crystals. The semiconductor crystals are then heated for a predetermined period of time until an outer layer of the semiconductor crystals is melted. The melted outer layer can then be doped (e.g., n-type) and then allowed to re-solidify. As a result, a plurality of spherical shaped p-n devices is created.
    Type: Grant
    Filed: September 28, 2000
    Date of Patent: May 7, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Murali Hanabe, Nainesh J. Patel, Michael Perdue
  • Patent number: 6379867
    Abstract: A photolithography system and method for providing a mask image to a subject such as a wafer is provided. The mask images are divided into sub-patterns and sequentially provided to a pixel panel, such as a deformable mirror device or a liquid crystal display. The pixel panel converts each sub-pattern into a plurality of pixel elements. Each of the pixel elements is then simultaneously focused to discrete, non-contiguous portions of the subject through a microlense array. The subject and pixel elements are then moved (e.g., one or both may be moved) and the next sub-pattern in the sequence is provided to the pixel panel. As a result, light can be projected on the subject, according to the pixel elements, to create a contiguous image on the subject.
    Type: Grant
    Filed: January 10, 2000
    Date of Patent: April 30, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Wenhui Mei, Takashi Kanatake, Akira Ishikawa
  • Patent number: 6365493
    Abstract: A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and doping powder. The semiconductor spheres and dopant powder are then directed to a chamber defined within an enclosure. The chamber maintains a heated, inert atmosphere with which to diffuse the dopant to the semiconductor spheres.
    Type: Grant
    Filed: January 24, 2000
    Date of Patent: April 2, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Evangellos Vekris, Nainesh J. Patel, Murali Hanabe
  • Patent number: 6366206
    Abstract: A method and apparatus for attaching one or more transponders to medical and non-medical products to tag respective ones of the products with identifying data contained in a memory of the transponders. The one or more transponders each include a memory containing the corresponding identifying data which is emitted by the respective transponder in response to an electromagnetic signal emitted externally of the transponder. The identifying data corresponds to at least one of the respective one or more transponders and a respective product for tagging. The one or more transponders are attached to respective ones of the products to tag the products with the corresponding identifying data.
    Type: Grant
    Filed: June 2, 2000
    Date of Patent: April 2, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Akira Ishikawa, Nabuo Takeda, Suzanne I. Ahn, Steven R. Hays
  • Patent number: 6358288
    Abstract: A method for securing a device, such as a spherical shaped semiconductor integrated circuit, for fabrication. An apparatus includes a plenum having an input and several outputs. The input of the plenum is connected to a pressurized fluid source. The outputs are separated into two groups: a centralized output and several peripheral outputs. The outputs connects to apertures located on a top surface of the apparatus. The centralized apertures expel the pressurized fluid from the fluid source to suspend the spherical shaped semiconductor integrated circuit device above the top surface. The peripheral apertures expel the pressurized fluid from the fluid source to secure the device above the centralized apertures.
    Type: Grant
    Filed: October 13, 1999
    Date of Patent: March 19, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Ramesh K. Kasim, Ram Ramamurthi
  • Patent number: 6355873
    Abstract: A spherical shaped solar diode having an n-type substrate surrounded by a p-type layer of semiconductor material is disclosed. In addition, a plurality of hetero-junction super lattice structures are formed surrounding the p-type layer. The plurality of hetero-junction super lattice structures include alternating layers of Si and SeBeTe. The plurality of hetero-junction super lattice structures adapt the diode to convert higher energy light (as compared to 1.1eV light) to electrical energy. The diodes are formed into a solar panel assembly. The panel assembly includes a wire mesh to secure the diodes and electrically contact one electrode of each diode. A dimpled sheet is also used for securing the diodes and electrically contacting the other electrode of each diode. The diodes are positioned adjacent to the dimpled sheet so that when light is applied to the solar panel assembly, the diodes are exposed to the light on a majority of each diode's surface.
    Type: Grant
    Filed: June 21, 2000
    Date of Patent: March 12, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventor: Akira Ishikawa
  • Patent number: 6335291
    Abstract: A system and method for performing plasma etch on a spherical shaped device is disclosed. The system includes a processing tube for providing a reactive chamber for the spherical shaped substrate and a plasma jet is located adjacent to the processing tube. The plasma jet includes a pair of electrodes, such as a central cathode and a surrounding anode, for producing a plasma flame directed towards the reactive chamber. The central cathode may, for example, be powered by a radio frequency power source. As a result, the reactive chamber supports non-contact etching of the spherical shaped substrate by the plasma flame.
    Type: Grant
    Filed: November 24, 1999
    Date of Patent: January 1, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventor: Alex Freeman
  • Patent number: 6335268
    Abstract: An apparatus and method for fabricating a spherical shaped semiconductor integrated circuit according to which a chamber is provided into which spheres of a semiconductor material are introduced therein. Process gases are also selectively introduced into the chamber. The chamber includes a metallic portion that is selectively provided a voltage. Upon receiving the voltage, the chamber attracts ions from the process gases, at least some of the attracted ions treating the spheres according to a particular aspect of the fabrication process.
    Type: Grant
    Filed: September 23, 1999
    Date of Patent: January 1, 2002
    Assignee: Ball Semiconductor, Inc.
    Inventors: Ivan Herman Murzin, Yanwei Zhang
  • Patent number: 6331477
    Abstract: A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and a dopant. The semiconductor spheres are heated to a molten state. The dopant is absorbed by the semiconductor spheres. The semiconductor spheres are cooled to produce doped semiconductor spheres. The method is performed in a non-contact environment.
    Type: Grant
    Filed: January 24, 2000
    Date of Patent: December 18, 2001
    Assignee: Ball Semiconductor, Inc.
    Inventors: Evangellos Vekris, Nainesh J. Patel, Murali Hanabe
  • Patent number: 6328804
    Abstract: A method and system for chemical vapor deposition (MO CVD) of a metal layer upon a spherical substrate at atmospheric pressure are disclosed. The method performs chemical vapor deposition of a metal layer such as aluminum or copper upon the semiconductor spherical substrate by using a reactor made of a material such as quartz. The semiconductor spherical substrate moves and spins through the reactor where it is heated by a frequency heater such as an infrared heater. The heater utilizes infrared power source operating at a wavelength between 1 and 3 microns where the power is substantially absorbed by the semiconductor spherical substrate and is substantially transmitted by the quartz.
    Type: Grant
    Filed: May 14, 1999
    Date of Patent: December 11, 2001
    Assignee: Ball Semiconductor, Inc.
    Inventors: Ivan Herman Murzin, Jeffrey Ned Miller, Ajay Tapiawala
  • Patent number: 6324904
    Abstract: Sensor modules are provided which are pumped into a well by first being pumped downhole within a drill string, then passing through the drill bit and being circulated uphole in the annulus between the drill string and the borehole of the well. The sensors take measurement readings as they are being pumped uphole through the annulus. The sensors are preferably separated from the mud returns from the well, and then read at an inductive read unit. The sensor modules are provided by semiconductor substrates which measure downhole well parameters, and then store the date for retrieval at the surface. The semiconductor substrates preferably have a plurality of sides on which measurement sensors and circuitry may be formed, allowing the circuitry and the sensors to be made of smaller sizes. Such sensors include temperature sensors, three-dimensional stain gauges, which are also useful as pressure transducers, inductive pressure transducers, inclination sensors, accelerometers, gyroscopes and radiation detectors.
    Type: Grant
    Filed: August 18, 2000
    Date of Patent: December 4, 2001
    Assignee: Ball Semiconductor, Inc.
    Inventors: Akira Ishikawa, Nabuo Takeda, Suzanne I. Ahn, Steven R. Hays