Abstract: A system and method for polishing spherical shaped devices is disclosed. The system includes a carrier and an enclosure. The carrier has two projections so that when a device is placed between the projections, it contacts the carrier at two contact points. The enclosure matingly engages with the carrier so that it also contacts each device at two contact points. A movement system, such as a motor, provides relative movement between the carrier and the enclosure so that the four contact points polish each device. Also, the relative movement moves each device so that the device's entire outer surface is polished by the apparatus.

Abstract: An apparatus and method for transferring a particulate material in a non-contact manner. The apparatus has a driving device including a nozzle curved surface portion fitted to the transfer pipe to join with the inner wall surface of the pipe. The nozzle curved surface portion has a curved surface whose diameter continuously increases from the inner wall surface. The driving device further includes an annular gap-forming member that forms a nozzle gap between it and the nozzle curved surface portion. A fluid is caused to flow into the transfer pipe from the driving device, thereby forming a buffer layer of a spiral flow in the vicinity of the inner wall surface of the transfer pipe and thus keeping the particulate material in a non-contact state.

Abstract: A method and system for making small gaps in a MEMS device is disclosed. The MEMS device is first made with a sacrificial layer where the gap is to reside. The device can then be assembled, including forming a protective coat surrounding the device. Once the protective coat is formed, small holes in the protective coat can be made to expose the sacrificial layer to an external environment. The holes can be formed using laser ablation. After the small holes have been made, an etchant can then be applied through the holes to remove the sacrificial layer.

Abstract: A method for designing a circuit on a spherical shaped semiconductor device using a great circle and a small, which is either parallel or perpendicular to the great circle, to define critical dimensions needed for the circuit. A great-circle-small-circle framework is used that has at least one great circle and one small circle that define a critical dimension on the surface of the sphere.

Abstract: A system and method for holding and aligning spherical shaped devices is disclosed. The system aligns spherical shaped devices that have at least two hollows formed on an outer surface thereof. The system includes a first knob for aligning with the first hollow and a second knob for aligning with the second hollow. The first knob is relatively small, as compared with the first hollow, while the second knob is relatively large, as compared with the second hollow. The system may also include a third knob for securing the spherical shaped device with the first and second knobs.

Abstract: A system for depositing photo resist using chemical vapor deposition (“CVD”) onto a semiconductor substrate is disclosed. The system includes a processing chamber and a gas chamber. The gas chamber receives a monomer and supplies sufficient energy for polymerization of the monomer, thereby creating a polymer vapor. The processing chamber receives the semiconductor substrate and the polymer vapor. CVD occurs and the polymer vapor deposits a thin layer photo resist on the surface semiconductor substrate.

Abstract: The present invention discloses a magnetic random access memory (MRAM). It improves upon conventional RAM designs by memorizing a logic bit value through magnetizing ferromagnetic material layer near the intersection of a specific word line and bit line. A write operation and an erase operation can be performed by changing direction of current flow on the bit line and word line. A read operation can be performed by monitoring an output current signal from an input current signal. A multiple layer design can be done on a silicon substrate to implement the MRAM by appropriately arranging the layers for the bit line, the word line, and the ferromagnetic material layer.

Abstract: A processing apparatus and method for positioning a device, in particular a spherical-shaped semiconductor device, is disclosed. The device to be processed is contained in a carrier fluid which is used to control the movement of the device. A physical deformity, previously induced onto the device, causes the device to align itself in a calculable manner within the fluid so as to reduce drag. The location and particular shape of the deformity define the specific alignment the device will achieve. Once roughly aligned, a plurality of energy sources project device shadows upon sensors that are sensitive to the energy source being used. The information acquired by the sensors is then used to calculate the position of the device.

Abstract: A method and apparatus for metal-organics chemical vapor deposition (MO CVD) of a metal layer upon a spherical substrate at atmospheric pressure are disclosed. The method includes pretreating the spherical substrate with a vapor of a first precursor in preparation for a deposition of a metal layer. The pretreated spherical substrate is then exposed to a thermally dissociated precursor of metal for depositing the metal layer onto the spherical substrate, wherein the exposure to the thermally dissociated precursor of metal provides a uniformly deposited metal layer coverage over the pretreated spherical substrate. The deposited metal layer is then annealed and cooled.

Abstract: A system and method for performing plasma etch on a spherical shaped device is disclosed. The system includes a processing tube for providing a reactive chamber for the spherical shaped substrate and a plasma jet is located adjacent to the processing tube. The plasma jet includes a pair of electrodes, such as a central cathode and a surrounding anode, for producing a plasma flame directed towards the reactive chamber. The central cathode may, for example, be powered by a radio frequency power source. As a result, the reactive chamber supports non-contact etching of the spherical shaped substrate by the plasma flame.

Abstract: A system and method for forming spherical semiconductor crystals is disclosed. The system includes a receiver tube 18 for receiving semiconductor granules 104. The granules are then directed to a chamber 14 defined within an enclosure 20. The chamber maintains a heated, inert atmosphere with which to melt the semiconductor granules into a molten mass. A nozzle, 40, creates droplets from the molten mass, which then drop through a long drop tube 16. As the droplets move through the drop tube, they form spherical shaped semiconductor crystals 112. The drop tube is heated and the spherical shaped semiconductor crystals may be single crystals. An inductively coupled plasma torch positioned between the nozzle and the drop tube melts the droplets, but leaving a seed in-situ. The seed can thereby facilitate crystallization.

Abstract: An apparatus and a method for producing a mask, which was derived using two-dimensional design tools, for imparting circuit designs directly on a three-dimensional surface. The method for creating the mask includes the steps of creating a two dimensional design with at least one element, establishing a location coordinate for the element using a two-dimensional coordinate system, converting the location coordinate for the element into a spacial coordinate for the element using a three-dimensional spacial coordinate system, converting the spacial coordinate for the element into a positional coordinate, and generating the mask using the positional coordinate. The apparatus for implementing three-dimensional designs using a mask, which is generated from a two-dimensional design, includes a light source and an elliptical mirror. The elliptical mirror has two focal points so that the elliptical mirror can focus a beam of light onto the three-dimensional surface.

Abstract: A system and a method for focusing an image onto the surface of a nonplanar substrate or device, such as a spherical semiconductor substrate, that substantially eliminates misalignment and overlapping problems between neighboring images. The system includes a plurality of mirrors arranged in a ring, a support reciprocatingly positioned relative to the center of the ring of mirrors for positioning the nonplanar substrate or device relative to the ring of mirrors. The nonplanar substrate or device is positioned such that each mirror will be capable of reflecting a focused image onto the surface of the substrate. The image is generated using a mask positioned relative to the ring of mirrors and illuminated to project the image onto the surface of the nonplanar substrate or device.

Abstract: An apparatus and method for fabricating a spherical shaped semiconductor integrated circuit according to which a chamber is provided into which spheres of a semiconductor material are introduced therein. Process gases are also selectively introduced into the chamber. The chamber includes a metallic portion that is selectively provided a voltage. Upon receiving the voltage, the chamber attracts ions from the process gases, at least some of the attracted ions treating the spheres according to a particular aspect of the fabrication process.

Abstract: An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and two chambers. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A first chamber is formed within the enclosure and includes a plasma torch. A second chamber is formed within the enclosure and includes a heating coil. Devices move through the input conduit and into the first chamber where they are heated by the plasma torch. Because of this heating, radicals, electrons, and ions near the surface of the devices are generated. The heated devices then move into the second chamber where they are further heated by energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.

Abstract: A method for designing a circuit on a spherical shaped semiconductor integrated circuit using uniform unit shapes capable of cover the surface of the sphere in a matingly corresponding orientation with adjacent unit shapes. The method includes the steps of designing a circuit within each unit shape selected from various types of unit shape patterns; selecting a predetermined number of those unit shapes from the various types of unit shape patterns; and covering the spherical integrated circuit with the predetermined number of unit shapes. Furthermore, the designer can use the unit shapes to navigate over the surface to accurately determine the location, the position, and surface area remaining.

Abstract: An apparatus and method for separating fluid from a device such as a spherical shaped semiconductor integrated circuit. To this end, one embodiment provides a first area for receiving the device, a reducing area registering with the first area, a first passage centered in the reducing area, and a second passage adjacent the first passage. The pressure inside the first area is greater than the pressure inside the reducing area. Also, the pressure inside the first passage is greater than the pressure inside the second passage. The device moves through the first area and into the reducing area. Once in the reducing area, the device is inclined to enter the first passage while at least part of the fluid is inclined to enter the second passage. As a result, the fluid is thereby separated from the device.

Abstract: Apparatus and method for contactless capturing and transporting a restrained spherical-shaped semiconductor integrated circuit located within a transport tube or other component of a spherical-shaped semiconductor integrated circuit manufacturing system and restrained by a fluid flow within the transport tube or other component of the spherical-shaped semiconductor integrated circuit manufacturing system. The apparatus includes a diverging nozzle having an inlet aperture, an outlet aperture formed on an exterior side surface thereof and an interior sidewall which defines a generally frusto-conical shaped interior passageway through which gas flows. By repositioning the apparatus from a first position to a second position above, below or to one side of the first position, the restrained spherical object may be captured at an equilibrium position relative to the diverging nozzle.

Abstract: An apparatus and method for performing material deposition on semiconductor devices. The apparatus provides an enclosure for defining a chamber. The chamber includes a metallic portion such as a conductor coil powered by a voltage generator. A gas, having a suspension of particles for treating the semiconductor devices, is introduced into the chamber and the powered conductor coil converts the gas to inductively coupled plasma and vaporizes the particles. The particles can then be deposited on the semiconductor devices.

Abstract: Apparatus and method for contactless capturing and transporting a restrained spherical-shaped semiconductor integrated circuit located within a transport tube or other component of a spherical-shaped semiconductor integrated circuit manufacturing system and restrained by a fluid flow within the transport tube or other component of the spherical-shaped semiconductor integrated circuit manufacturing system. The apparatus includes a diverging nozzle having an inlet aperture, an outlet aperture formed on an exterior side surface thereof and an interior sidewall which defines a generally frusto-conical shaped interior passageway through which gas flows. By repositioning the apparatus from a first position to a second position above, below or to one side of the first position, the restrained spherical object may be captured at an equilibrium position relative to the diverging nozzle.