Patents Assigned to BinOptics Corporation
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Publication number: 20120077294Abstract: A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.Type: ApplicationFiled: October 14, 2011Publication date: March 29, 2012Applicant: BinOptics CorporationInventors: Alex Behfar, Cristian Stagarescu
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Patent number: 8130806Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.Type: GrantFiled: June 20, 2006Date of Patent: March 6, 2012Assignee: BinOptics CorporationInventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu, Vainateya
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Patent number: 8064493Abstract: A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.Type: GrantFiled: March 17, 2010Date of Patent: November 22, 2011Assignee: BinOptics CorporationInventors: Alex Behfar, Cristian Stagarescu
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Patent number: 8014434Abstract: A semiconductor chip has at least two DFB etched facet laser cavities with one set of facets with AR coatings and a second set of etched facets with HR coatings that have a different relative position with respect to the gratings. This creates a difference in the phase between each of the etched facets and the gratings which changes the operational characteristics of the two laser cavities such that at least one of the lasers provides acceptable performance. As a result, the two cavity arrangement greatly improves the yield of the fabricated chips.Type: GrantFiled: September 11, 2008Date of Patent: September 6, 2011Assignee: Binoptics CorporationInventors: Alex Behfar, Malcolm Green, Norman Kwong, Cristian Stagaresen
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Patent number: 8009711Abstract: A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.Type: GrantFiled: September 25, 2009Date of Patent: August 30, 2011Assignee: Binoptics CorporationInventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu
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Patent number: 7972879Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.Type: GrantFiled: December 17, 2009Date of Patent: July 5, 2011Assignee: Binoptics CorporationInventors: Alex A. Behfar, Malcolm R. Green, Alfred T. Schremer
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Patent number: 7957445Abstract: An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.Type: GrantFiled: June 1, 2006Date of Patent: June 7, 2011Assignee: Binoptics CorporationInventors: Alex A. Behfar, Alfred T. Schremer
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Publication number: 20100316076Abstract: A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.Type: ApplicationFiled: March 17, 2010Publication date: December 16, 2010Applicant: BinOptics CorporationInventors: Alex Behfar, Cristian Stagarescu
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Patent number: 7835415Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.Type: GrantFiled: August 31, 2004Date of Patent: November 16, 2010Assignee: BinOptics CorporationInventors: Alex A. Behfar, Kiyofumi Muro, Cristian B. Stagarescu, Alfred T. Schremer
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Patent number: 7830939Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width won top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively.Type: GrantFiled: July 10, 2008Date of Patent: November 9, 2010Assignee: BinOptics CorporationInventors: Alex A. Behfar, Wilfried Lenth
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Patent number: 7817702Abstract: Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.Type: GrantFiled: March 18, 2004Date of Patent: October 19, 2010Assignee: Binoptics CorporationInventors: Alex A. Behfar, Alfred T. Schremer, Jr., Cristian B. Stagarescu
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Patent number: 7799587Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.Type: GrantFiled: August 2, 2006Date of Patent: September 21, 2010Assignee: BinOptics CorporationInventors: Alex A. Behfar, Malcolm Green, Alfred T. Schremer
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Patent number: 7675957Abstract: A surface emitting laser (100) and a monitoring photodetector (MPD) 158 are mounted in a TO (transistor outline package) can (150) on the same plane as one another. Light from a rear facet (108) of the laser is directed to the MPD through a polymer light guide (164).Type: GrantFiled: March 5, 2008Date of Patent: March 9, 2010Assignee: Binoptics CorporationInventors: Joseph J. Vandenberg, Norman S. Kwong, Alex A. Behfar
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Patent number: 7656922Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.Type: GrantFiled: April 14, 2005Date of Patent: February 2, 2010Assignee: Binoptics CorporationInventors: Alex A. Behfar, Malcolm R. Green, Alfred T. Schremer
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Patent number: 7606277Abstract: A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.Type: GrantFiled: December 26, 2006Date of Patent: October 20, 2009Assignee: Binoptics CorporationInventors: Alex A. Behfar, Cristian B. Stagarescu, Alfred T. Schremer
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Patent number: 7598527Abstract: A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.Type: GrantFiled: January 5, 2006Date of Patent: October 6, 2009Assignee: Binoptics CorporationInventors: Alex A. Behfar, Cristian B. Stagarescu, Malcolm R. Green, Alfred T. Schremer, Jr.
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Patent number: 7569860Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.Type: GrantFiled: January 19, 2005Date of Patent: August 4, 2009Assignee: BinOptics CorporationInventors: Alex A. Behfar, Malcolm Green, Alfred T. Schremer
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Patent number: 7542497Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.Type: GrantFiled: July 18, 2007Date of Patent: June 2, 2009Assignee: Binoptics CorporationInventor: Alex A. Behfar
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Patent number: 7408183Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively.Type: GrantFiled: August 24, 2006Date of Patent: August 5, 2008Assignee: Binoptics CorporationInventors: Alex A. Behfar, Wilfried Lenth
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Publication number: 20080151955Abstract: A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.Type: ApplicationFiled: December 26, 2006Publication date: June 26, 2008Applicant: BinOptics CorporationInventors: Alex A. Behfar, Alfred T. Schremer, Cristian B. Stagarescu