Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.

Abstract: A surface-emitting laser, in which light is emitted vertically at one end from a near 45°-angled facet, includes a second end having a perpendicular facet from which light is emitted horizontally, for monitoring. The surface-emitting laser comprises a divergence-compensating lens on the surface above the near 45°-angled facet.

Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively.

Abstract: A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.

Abstract: An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.

Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.

Abstract: A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.

Abstract: Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer of photoresist material is spun onto a substrate surface and is exposed in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer of photoresist material is deposited and is also exposed in a desired pattern. Subsequent layers are spun onto the top surface of prior layers and exposed, and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure.

Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.

Abstract: A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.

Abstract: A surface-emitting laser, in which light is emitted vertically at one end from a near 45°-angled facet, includes a second end having a perpendicular facet from which light is emitted horizontally, for monitoring. The surface-emitting laser comprises a divergence-compensating lens on the surface above the near 45°-angled facet.

Abstract: A surface-emitting laser, in which light is emitted vertically at one end from a 45°-angled facet, includes a second end having a perpendicular facet from which light is emitted horizontally, for monitoring.

Abstract: A ring-type laser including a traveling wave cavity which incorporates at least first and second straight cavity sections and at least one curved cavity section. Corresponding first ends of the straight cavity sections are interconnected at a first light-emitting facet, and second ends of the straight sections are interconnected by the curved waveguide. Additional curved and straight sections can be linked to provide various ring configurations.

Abstract: An integrated semiconductor laser device capable of emitting light of selected wavelengths includes multiple ring lasers of different cavity lengths coupled in series or in parallel to a common output to produce an output beam having a wavelength corresponding to the selected ring lasers.

Abstract: Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer of photoresist material is spun onto a substrate surface and is exposed in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer of photoresist material is deposited and is also exposed in a desired pattern. Subsequent layers are spun onto the top surface of prior layers and exposed, and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure.

Abstract: Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer of photoresist material is spun onto a substrate surface and is exposed in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer of photoresist material is deposited and is also exposed in a desired pattern. Subsequent layers are spun onto the top surface of prior layers and exposed, and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure.

Abstract: Three-dimensional structures of arbitrary shape are fabricated on the surface of a substrate through a series of processing steps wherein a monolithic structure is fabricated in successive layers. A first layer of photoresist material is spun onto a substrate surface and is exposed in a desired pattern corresponding to the shape of a final structure, at a corresponding cross-sectional level in the structure. The layer is not developed after exposure; instead, a second layer of photoresist material is deposited and is also exposed in a desired pattern. Subsequent layers are spun onto the top surface of prior layers and exposed, and upon completion of the succession of layers each defining corresponding levels of the desired structure, the layers are all developed at the same time leaving the three-dimensional structure.