Abstract: An ion beam etching device includes a grid provided between a treatment chamber and a plasma generation chamber, and for forming an ion beam by drawing ions from the plasma generation chamber; a gas introduction unit for introducing discharge gas into the plasma generation chamber; an exhaust for exhausting the treatment chamber; a substrate holder; a control unit to receive a measurement result of an in-plane film thickness distribution before the substrate is processed; and an electromagnetic coil provided outside of the plasma generation chamber in a ceiling portion opposite to the grid of the plasma generation chamber. The electromagnetic coil includes an outer coil provided on an outer circumference of the ceiling portion and an inner coil provided on an inner circumference of the ceiling portion, and the control unit controls the currents applied to the outer coil and the inner coil in accordance with the measurement result.

Abstract: A power supply device supplies power to a substrate holder having a plurality of electrodes. The device includes a first fixed conductive member, a second fixed conductive member, a fixed insulating member fixed to an insulating housing portion and configured to insulate the first fixed conductive member from the second fixed conductive member, a first rotation conductive member, a second rotation conductive member, a rotation insulating member fixed to an insulating column portion and configured to insulate the first rotation conductive member from the second rotation conductive member, a first power supply member configured to supply a first voltage to the substrate holder via the first rotation conductive member and the first fixed conductive member, and a second power supply member configured to supply a second voltage to the substrate holder via the second rotation conductive member and the second fixed conductive member.

Abstract: An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.

Abstract: A production process in which in an element isolation process for a magnetoresistive effect element, a re-deposited film adhered to a side wall of the element is efficiently removed by ion beam etching. Ion beam etching is performed while a substrate located being inclined relative to the grid is rotated. In the ion beam etching, an energy amount of an ion beam entering from a direction in which a pattern groove formed on the substrate extends is increased larger than the energy amount of the ion beam entering from another direction by controlling a rotation speed of the substrate, and the re-deposited film adhered to the side wall of the magnetoresistive effect element formed on the substrate is efficiently removed by etching.

Abstract: A sputtering apparatus comprises: a target holder; and a magnet unit of a rectangular shape having long and short sides. The magnet unit includes: a first magnet; a second magnet disposed surrounding the first magnet and magnetized in a different and opposite direction from a direction of magnetization of the first magnet, and a third magnet located at part between the first magnet and the second magnet in the short-side direction and at least at a center position between the first magnet and the second magnet, the third magnet being magnetized in the short-side direction. In the third magnet, a surface facing the second magnet has the same polarity as that of a surface of the second magnet on the target holder side, and a surface facing the first magnet has the same polarity as that of a surface of the first magnet on the target holder side.

Abstract: The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

Abstract: A film thickness distribution exists in a substrate plane after CMP step. This film thickness distribution results in, for example, variation in gate threshold value voltages of metal gates, and causes variation in element characteristics. It is an object of the present invention to easily improve the film thickness distribution processed by this CMP step. By using the ion beam etching method after the CMP step, the film thickness distribution in the plane of the substrate 111 is corrected. More specifically, when the ion beam etching is performed, the plasma density in the plasma generation chamber 102 is caused to be different between a position facing a central portion in the plane of the substrate 111 and a position facing an outer peripheral portion, so that the etching rate in the central portion in the plane of the substrate 111 and the etching rate in the outer peripheral portion in the substrate plane 111 are caused to be different.

Abstract: A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers.

Abstract: A deposition apparatus includes a chamber, a holding unit configured to hold a substrate in the chamber, a driving unit configured to move the holding unit holding the substrate such that the substrate passes through a deposition area in the chamber, a deposition unit configured to form a film on the substrate passing through the deposition area by supplying a deposition material to the deposition area, and a cooling unit configured to cool the holding unit.

Abstract: A deposition apparatus includes a plasma generator for generating a plasma by arc discharge, and a deposition unit for forming a film on a member by the plasma generated by the plasma generator. The plasma generator includes a target holder for holding a target and applying a negative potential to the target, an anode to which a positive potential is applied, and a capture for capturing droplets from the target. The anode has an opening, and the capture is arranged in the opening.

Abstract: A mass spectrometer includes: an ionization unit configured to ionize an analyte gas; a filter unit configured to allow passage of only a target ion which is a component of the analyte gas ionized in the ionization unit and which has a specific mass-to-charge ratio; and an ion detection unit configured to detect an ion detection value based on the target ion having passed through the filter unit, wherein the ion detection unit includes a Faraday electrode which includes an electrode portion disposed along a centerline of the filter unit and a bottom electrode provided at a position downstream of the electrode portion in a flow of the target ion, the electrode portion and the bottom electrode being connected to each other, a secondary electron multiplier provided to face the electrode portion with the centerline located therebetween, and a blocking portion connected to the bottom electrode.

Abstract: In order to easily exchange a depleted dielectric member in a substrate processing apparatus, a faraday shield provided opposite to an antenna across a component member made of a dielectric, a first dielectric member provided opposite to the antenna across the component member and the faraday shield, and a second dielectric member provided opposite to the antenna across the component member, the faraday shield, and the first dielectric member are provided, and the second dielectric member is placed on a protrusion part formed on a vacuum container in the substrate processing apparatus.

Abstract: A sputtering apparatus includes a space defining member defining a sputtering space for forming a film on a substrate. The space defining member includes a concave portion, and an opening portion is provided in the bottom portion of the concave portion. The sputtering apparatus includes a shield member configured to shield the opening portion from the sputtering space. The opening portion is formed so that a pressure gauge capable of measuring the pressure in the sputtering space can be attached, and the shield member is arranged so that at least a part of the shield member is buried in the concave portion.

Abstract: This invention provides a production process in which in a process for producing a magnetoresistive effect element, noble metal atoms in a re-deposited film adhered to a side wall after element isolation are efficiently removed to prevent short-circuiting due to the re-deposited film. The noble metal atoms are selectively removed from the re-deposited film by applying an ion beam, formed using a plasma of a Kr gas or a Xe gas, to the re-deposited film formed on the side wall of the magnetoresistive effect element after the element isolation.

Abstract: A sputtering apparatus includes a deposition preventing plate arranged between a substrate stage and a plurality of cathode electrodes, and a shutter plate arranged between the deposition preventing plate and the substrate stage. The deposition preventing plate has holes at positions respectively facing a plurality of targets held by the plurality of cathode electrodes. Concentric concavo-convex shapes centered on the rotation axis of the shutter plate are formed on surfaces, that face each other, of the deposition preventing plate and the shutter plate.

Abstract: The present invention provides a substrate heat treatment apparatus capable of uniformly heat a substrate at high speed with less breakage of constituent members due to thermal expansion even at high temperature. An embodiment of the present invention is a substrate heat treatment apparatus to perform heat treatment for a substrate and includes: a peripheral ring capable of supporting the substrate; a connection ring; a lifting device to raise and lower the peripheral ring; balls having a lower heat conductivity than that of the peripheral ring; and a lamp to heat the substrate supported by the peripheral ring. The balls are different members from both of the peripheral ring and the connection ring. The lifting device raises and lowers the peripheral ring between a first position close to the lamp and a second position distant from the lamp.

Abstract: The invention provides a substrate processing device and a substrate processing method for cooling a substrate, which are capable of conveying a substrate in a cleaner condition. A substrate cooling device serving as a substrate processing device of an embodiment of the invention includes: a chamber; a cooling unit which performs cooling; a substrate holder which is provided with a substrate mounting surface for mounting a substrate inside the chamber, and is cooled by the cooling unit; and a shield which is provided with a side surface portion surrounding a lateral side of the substrate mounting surface inside the chamber, and is cooled by the cooling unit. Moreover, a shield heater is provided in the vicinity of a surface on the inside of the shield.

Abstract: An apparatus includes a C-shaped susceptor including a first substrate placement portion capable of placing the substrate, and an opening portion, a substrate stage including a second substrate placement portion capable of placing the substrate, and a susceptor support portion configured to support the susceptor, and a complementary portion formed separately from the susceptor support portion, engaged with the susceptor support portion, and configured to complement an opening portion of the susceptor to form the susceptor into an annular shape in a state in which the susceptor support portion supports the susceptor. When the substrate is placed on the second substrate placement portion and the second substrate placement portion is located at a predetermined distant position with respect to the heat radiation surface, the susceptor forms the annular shape together with the complementary portion to surround the substrate.

Abstract: A processing apparatus includes a substrate supporting unit that supports a substrate in a processing space in which the substrate is processed, a first partitioning member that includes a ceiling portion having an opening and partitions the processing space from an outer space, and a second partitioning member that is attached to the first partitioning member so as to close the opening and partition the processing space from the outer space together with the first partitioning member. The second partitioning member is attached to the first partitioning member so that the second partitioning member is removable from the first partitioning member by moving the second partitioning member toward a space which a lower surface of the ceiling portion faces.

Abstract: In a case where reactive ion etching using a gas containing an oxygen atom is used for etching or a magnetoresistive element, a magnetic film becomes damaged due to oxidation. Such damage to the element by the oxidation becomes a factor which causes deterioration in element properties. In the etching of the magnetoresistive element according to one embodiment of the present invention, a magnetoresistive film is subjected to ion beam etching and thereafter to reactive ion etching. A side deposition formed by the ion beam etching coats a sidewall of the magnetoresistive film and reduces damage by the oxygen atom during the later reactive ion etching. Also, a time during which the element is exposed to plasma of the gas containing the oxygen atom can be reduced.