Patents Assigned to Canon Anelva Corporation
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Patent number: 10720299Abstract: An X-ray generating tube includes an insulating tube having a first open end and a second open end, a cathode including an electron emission source and arranged to close the first open end of the insulating tube, an anode including a target that generates an X-ray upon collision with electron from the electron emission source and arranged to close the second open end of the insulating tube, and a tubular electrical conductive member extending from the anode in an inner space of the insulating tube. The insulating tube includes a tubular rib at a position spaced apart from the first open end and spaced apart from the second open end, and the tubular rib is arranged in a radial direction when viewed from an end of the tubular electrical conductive member on a side of the cathode.Type: GrantFiled: June 24, 2019Date of Patent: July 21, 2020Assignee: CANON ANELVA CORPORATIONInventor: Yoichi Ando
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Publication number: 20200211808Abstract: An X-ray generating tube includes an insulating tube having a first open end and a second open end, a cathode including an electron emission source and arranged to close the first open end of the insulating tube, an anode including a target that generates an X-ray upon collision with electron from the electron emission source and arranged to close the second open end of the insulating tube, and a tubular electrical conductive member extending from the anode in an inner space of the insulating tube. The insulating tube includes a tubular rib at a position spaced apart from the first open end and spaced apart from the second open end, and the tubular rib is arranged in a radial direction when viewed from an end of the tubular electrical conductive member on a side of the cathode.Type: ApplicationFiled: June 24, 2019Publication date: July 2, 2020Applicant: Canon Anelva CorporationInventor: Yoichi ANDO
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Patent number: 10685815Abstract: The present invention provides a plasma processing apparatus which reduces damage from plasma generated in a discharge vessel and lengthens the replacement cycle of the discharge vessel. A plasma processing apparatus 1 is provided with a processing chamber 2 partitioning a processing space, a discharge vessel 3 whose one end opens facing inside the processing chamber 2 and the other end is closed, an antenna 4 which is disposed around the discharge vessel 3 and generates an induced electric field to generate plasma in the discharge vessel 3 under reduced pressure, and an electromagnet 9 which is arranged around the discharge vessel 3 and forms a divergent magnetic field in the discharge vessel 3. The discharge vessel 3 has at its closed end portion a protrusion 15 projecting toward the processing chamber 2.Type: GrantFiled: August 25, 2010Date of Patent: June 16, 2020Assignee: CANON ANELVA CORPORATIONInventors: Ryo Matsuhashi, Hiroshi Akasaka, Yoshimitsu Kodaira, Atsushi Sekiguchi, Naoko Matsui
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Patent number: 10676813Abstract: This invention provides a deposition apparatus which forms a film on a substrate, comprising: a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.Type: GrantFiled: July 15, 2016Date of Patent: June 9, 2020Assignee: CANON ANELVA CORPORATIONInventor: Masahiro Atsumi
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Patent number: 10636634Abstract: A sputtering apparatus according to one embodiment of the present invention includes a substrate holder, a cathode unit arranged at a position diagonally opposite to the substrate holder, a position sensor for detecting a rotational position of the substrate, and a holder rotation controller for adjusting a rotation speed of the substrate according to the detected rotational position. The holder rotation controller controls the rotation speed so that the rotation speed of the substrate when the cathode unit is located on a side in a first direction as an extending direction of a process target surface of the relief structure is lower than the rotation speed of the substrate when the cathode unit is located on a side in a second direction which is perpendicular to the first direction along the rotation of the substrate.Type: GrantFiled: May 4, 2018Date of Patent: April 28, 2020Assignee: CANON ANELVA CORPORATIONInventors: Koji Tsunekawa, Masahiro Suenaga, Takeo Konno
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Publication number: 20200126763Abstract: A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode insulated from the vacuum container and electrically connected to the first output terminal, and a second electrode insulated from the vacuum container and electrically connected to the second output terminal. The second electrode is arranged to surround an entire circumference of the first electrode.Type: ApplicationFiled: December 19, 2019Publication date: April 23, 2020Applicant: Canon Anelva CorporationInventors: Kazunari SEKIYA, Masaharu TANABE, Tadashi INOUE, Hiroshi SASAMOTO, Tatsunori SATO, Nobuaki TSUCHIYA
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Publication number: 20200126764Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, an impedance matching circuit, a first power supply connected to the balun via the impedance matching circuit, and configured to supply a high frequency to the first electrode via the impedance matching circuit and the balun, a low-pass filter, and a second power supply configured to supply a voltage to the first electrode via the low-pass filter.Type: ApplicationFiled: December 19, 2019Publication date: April 23, 2020Applicant: Canon Anelva CorporationInventors: Tadashi INOUE, Masaharu TANABE, Kazunari SEKIYA, Hiroshi SASAMOTO, Tatsunori SATO, Nobuaki TSUCHIYA
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Publication number: 20200126766Abstract: A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode electrically connected to the first output terminal, a second electrode electrically connected to the second output terminal, and a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor.Type: ApplicationFiled: December 19, 2019Publication date: April 23, 2020Applicant: Canon Anelva CorporationInventors: Kazunari SEKIYA, Masaharu TANABE, Tadashi INOUE, Hiroshi SASAMOTO, Tatsunori SATO, Nobuaki TSUCHIYA
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Publication number: 20200126767Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.Type: ApplicationFiled: December 19, 2019Publication date: April 23, 2020Applicant: Canon Anelva CorporationInventors: Atsushi TAKEDA, Takayuki MORIWAKI, Tadashi INOUE, Masaharu TANABE, Kazunari SEKIYA, Hiroshi SASAMOTO, Tatsunori SATO, Nobuaki TSUCHIYA
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Publication number: 20200126768Abstract: A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5?X/Rp?5000 is satisfied.Type: ApplicationFiled: December 19, 2019Publication date: April 23, 2020Applicant: Canon Anelva CorporationInventors: Tadashi INOUE, Masaharu TANABE, Kazunari SEKIYA, Hiroshi SASAMOTO, Tatsunori SATO, Nobuaki TSUCHIYA
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Patent number: 10631390Abstract: An X-ray generating device includes an X-ray tube, an X-ray tube drive circuit, an electron acceleration voltage generation circuit, and a control unit communicating with the drive circuit and the voltage generation circuit, the X-ray tube, the drive circuit, and the voltage generation circuit are arranged inside a storage container filled with an insulating oil, a path connecting the drive circuit and the control unit includes an optical fiber cable arranged inside the storage container, the optical fiber cable has a coating that suppresses fluctuation due to a convective flow of the insulating oil, the coating is cured by, from a resin material containing a plasticizer, a part of the plasticizer being leaching out, and the control unit is configured to facilitate leaching of the plasticizer by driving the voltage generation circuit to apply a voltage to the optical fiber cable in a state of no X-ray being generated.Type: GrantFiled: April 23, 2018Date of Patent: April 21, 2020Assignee: CANON ANELVA CORPORATIONInventors: Junya Kawase, Yoichi Ando
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Patent number: 10626494Abstract: In one embodiment of the invention, a protective film formation chamber for forming a carbon protective film on a magnetic film includes: a gas introduction part which introduces a source gas to a vacuum vessel; a discharge electrode having a discharge surface at a position facing a substrate conveyed to a predetermined position in the vacuum vessel; a plasma formation part which applies voltage between the discharge surface and the substrate conveyed to the predetermined position; a permanent magnet being provided on a back side of the discharge surface and having a first magnet and a second magnet provided such that their magnetic poles facing the discharge surface are opposite to each other; and a no-erosion-portion mask being provided in parallel to the discharge surface and covering an area of the discharge surface surrounding a portion facing the permanent magnet.Type: GrantFiled: December 16, 2013Date of Patent: April 21, 2020Assignee: CANON ANELVA CORPORATIONInventors: Hiroshi Yakushiji, Masahiro Shibamoto, Kazuto Yamanaka, Shogo Hiramatsu, Susumu Karino
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Patent number: 10629804Abstract: A magnetoresistance device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistance device.Type: GrantFiled: February 26, 2007Date of Patent: April 21, 2020Assignee: Canon Anelva CorporationInventors: Yoshinori Nagamine, Koji Tsunekawa, David Djulianto Djayaprawira, Hiroki Maehara
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Patent number: 10615012Abstract: A sputtering apparatus includes a shutter unit, a plurality of target holders, and a substrate holder which can rotate about an axis perpendicular to a surface on which a substrate is held. The shutter unit includes a first shutter having first and second apertures and a second shutter having third and fourth apertures. The plurality of target holders are arranged on a first virtual circle centered on the axis, with the arrangement intervals between the plurality of target holders on the first virtual circle including at least two types of arrangement intervals.Type: GrantFiled: May 11, 2018Date of Patent: April 7, 2020Assignee: CANON ANELVA CORPORATIONInventors: Shigenori Ishihara, Hiroyuki Toya, Yasushi Yasumatsu, Toshikazu Nakazawa, Eiji Nakamura, Shintaro Suda, Shin Imai, Yuu Fujimoto
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Patent number: 10546720Abstract: The present invention has an objective to provide a processing method and an ion beam processing apparatus capable of inhibiting deposition of redeposited films even for fine patterns. In an embodiment of the present invention, ion beam processing is performed such that an etching amount of an ion beam incident in extending directions of pattern trenches formed on a substrate is made larger than the etching amount of the ion beam incident in other directions. This processing enables fine patterns to be processed while inhibiting redeposited films from being deposited on the bottom portions of the trenches of the fine patterns.Type: GrantFiled: April 25, 2018Date of Patent: January 28, 2020Assignee: CANON ANELVA CORPORATIONInventors: Yoshimitsu Kodaira, Isao Takeuchi, Mihoko Nakamura
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Publication number: 20200001271Abstract: A structure in which a plurality of particles each containing a hydrogen absorption metal element are arranged in a fixed member such that the plurality of particles are apart from each other. An entire surface of each of the plurality of particles is surrounded by the fixed member.Type: ApplicationFiled: September 3, 2019Publication date: January 2, 2020Applicants: Canon Anelva Corporation, CANON KABUSHIKI KAISHAInventors: Manabu IKEMOTO, Hiroyuki TOKUNAGA
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Patent number: 10461249Abstract: A manufacturing method of a magneto-resistive effect device, the manufacturing method includes steps of: forming an Mg film on a substrate on which a reference layer is formed and oxidizing the Mg film to form an MgO layer on the reference layer; heating the substrate on which the MgO layer is formed; after the step of heating, forming an Mg layer on the MgO layer; cooling the substrate on which the Mg layer is formed; and forming a free layer on the Mg layer in a state where the substrate is cooled by the cooling step, and the step of forming the Mg layer, the step of cooling, and the step of forming the free layer are performed in the process same process chamber.Type: GrantFiled: July 26, 2018Date of Patent: October 29, 2019Assignee: CANON ANELVA CORPORATIONInventors: Hiroyuki Hosoya, Yoshinori Nagamine
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Patent number: 10433410Abstract: An X-ray generation apparatus includes an X-ray tube; a drive circuit that drives the X-ray tube; a voltage generation circuit that generates an electron acceleration voltage applied to the X-ray tube; and a control unit that communicates with the drive circuit, and at least the X-ray tube, the drive circuit, and the voltage generation circuit are arranged inside a storage container filled with an insulating oil. At least a part of a path connecting the drive circuit and the control unit is formed of an optical fiber cable arranged inside the storage container, and the optical fiber cable has electric field mitigation means for suppressing an electric field occurring due to a potential difference between the drive circuit and the control unit from locally concentrating along a longitudinal direction of the optical fiber cable.Type: GrantFiled: October 25, 2018Date of Patent: October 1, 2019Assignee: Canon Anelva CorporationInventor: Yoichi Ando
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Patent number: 10425990Abstract: A vacuum processing apparatus according to this invention includes a heating unit arranged to face a processing surface of a substrate supported by a substrate support unit in a vacuum chamber, a cooling unit arranged to face a reverse surface of the substrate supported by the substrate support unit, a temperature correction unit configured to correct a temperature of a periphery of the substrate in order to reduce a temperature difference between a central portion and the periphery of the substrate by being arranged in a predetermined position between the substrate and the cooling unit when the heating unit heats the substrate, and a correction unit moving device configured to retract the temperature correction unit from the predetermined position.Type: GrantFiled: November 3, 2015Date of Patent: September 24, 2019Assignee: CANON ANELVA CORPORATIONInventors: Hidehiro Yasukawa, Masahiro Sugihara
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Patent number: 10388491Abstract: To restrict generation of particles or deterioration in process reproducibility caused by a large amount or carbon polymers generated in a plasma generation portion in an ion beam etching apparatus when a magnetic film on a substrate is etched with reactive ion beam etching in manufacturing a magnetic device. In an ion beam etching apparatus, first carbon-containing gas is introduced by a first gas introduction part into a plasma generation portion, and second carbon-containing gas is additionally introduced by a second gas introduction part into a substrate processing space to perform reactive ion beam etching, thereby etching a magnetic material at preferable selection ratio and etching rate while restricting carbon polymers from being formed in the plasma generation portion.Type: GrantFiled: October 24, 2012Date of Patent: August 20, 2019Assignee: CANON ANELVA CORPORATIONInventors: Yoshimitsu Kodaira, Tomohiko Toyosato