Abstract: The present invention relates to a device for operating at least one bending beam in at least one closed control loop, wherein the device has: (a) at least one first interface designed to receive at least one controlled variable of the at least one control loop; (b) at least one programmable logic circuit designed to process a control error of the at least one control loop using a bit depth greater than the bit depth of the controlled variable; and (c) at least one second interface designed to provide a manipulated variable of the at least one control loop.

Abstract: The present invention relates to a method for examining a beam of charged particles, including the following steps: producing persistent interactions of the beam with a sample at a plurality of positions of the sample relative to the beam and deriving at least one property of the beam by analyzing the spatial distribution of the persistent interactions at the plurality of positions.

Abstract: An electro-optical circuit board can provide probe card functionality. The electro-optical circuit board includes at least one electrical conductor track and at least one optical beam path.

Abstract: The invention relates to an autofocusing method for an imaging device (for semiconductor lithography) comprising an imaging optical unit, an object to be measured and an autofocusing device having a reflective illumination, comprising the following method steps: a) defining at least three basis measurement points M(xj, yj) on a surface of the object, b) determining the deviation Az(M)j of a nominal position of the surface of the object from the focal plane of the autofocusing device at the defined basis measurement points M(xj, yj), c) storing the deviations Az(M)j from at least three basis measurement points M(xj, yj), d) using the stored deviation Az(M)j for determining a deviation Az(P)k at an arbitrary point P(xk, Yk) of the surface, and e) using the deviation Az(P)k for focusing onto the point P(xk, Yk).

Abstract: An optical diffraction component has a periodic grating structure profile. The diffraction structure levels are arranged so that a wavelength range around two different target wavelengths diffracted by the grating structure profile has radiation components with three different phases that interfere destructively with one another. Diffraction structure levels predefine a topography of a grating period of the grating structure profile that is repeated regularly along a period running direction. These include a neutral diffraction structure level, a positive diffraction structure level raised relative thereto, and a negative diffraction structure level lowered relative thereto. The neutral diffraction structure level has an extent along the period running direction which is less than 50% of the extent of the grating period. A difference between the two target wavelengths is less than 50%.

Abstract: A method for acquiring a 3D image of a sample structure includes acquiring a first raw 2D set of 2D images of a sample structure at a limited number of raw sample planes; calculating a 3D image of the sample structure represented by a 3D volumetric image data set; and extracting a measurement parameter from the 3D volumetric image data set. A further number of interleaving 2D image acquisitions are recorded at a further number of interleaved sample planes which do not coincide with previous acquisition sample planes. The steps “calculating,” “extracting” and “assigning” are repeated for the further interleaving 2D set until convergence or a maximum number of 2D image acquisitions is recorded. A projection system used for such method comprises a projection light source, a rotatable sample structure holder and a spatially resolving detector. Such method can also be used to acquire virtual tomographic images of a sample.

Abstract: Methods for characterizing the surface shapes of optical elements include the following steps: carrying out, in an interferometric test arrangement, at least a first interferogram measurement on the optical element by superimposing a test wave, which has been generated by diffraction of electromagnetic radiation on a diffractive element and has been reflected at the optical element, carrying out at least one additional interferogram measurement on in each case one calibrating mirror for determining calibration corrections, and determining the deviation from the target shape of the optical element based on the first interferogram measurement carried out on the optical element and the determined calibration corrections. At least two interferogram measurements are carried out for the at least one calibrating mirror, which differ from one another with regard to the polarization state of the electromagnetic radiation.

Abstract: A method for the tracking and identification of components of lithography systems, for example of projection exposure apparatuses for semiconductor lithography is provided. The components are each provided with at least one transponder. The transponder has a data memory, on which data relating to the respective component are stored. The transponder is configured to pick up wirelessly arriving signals of a reader and to respond with data from the data memory. The data are stored on the data memory during the production of the component and/or during the production of the lithography system and/or after the start-up of the lithography system.

Abstract: A metrology system includes a first beam analysis system for analyzing at least one first measurement beam that was coupled from the excitation laser beam before a reflection on the target material and a second beam analysis system for analyzing at least one second measurement beam that was coupled from the excitation laser beam after a reflection on the target material. Each of the first beam analysis system and the second beam analysis system has at least one wavefront sensor system.

Abstract: The invention relates to an apparatus and a method for characterizing a microlithographic mask. According to one aspect, an apparatus according to the invention comprises at least one light source which emits coherent light, an illumination optical unit which produces a diffraction-limited light spot on the mask from the coherent light of the at least one light source, a scanning device, by use of which it is possible to implement a scanning movement of the diffraction-limited light spot relative to the mask, a sensor unit, and an evaluation unit for evaluating the light that is incident on the sensor unit and has come from the mask, an output coupling element for coupling out a portion of the coherent light emitted by the at least one light source, and an intensity sensor for capturing the intensity of this output coupled portion.

Abstract: The present invention relates to a method for measuring a sample with a microscope, the method comprising the steps of: measuring a tilt of the sample, correcting an orientation of the sample based on the tilt, and scanning the sample.

Abstract: An optical system, in particular for microlithography, includes a beam splitter, which has at least one light entry surface. The beam splitter is arranged in the optical system so that the angles of incidence with respect to the surface normal which occur at the light entry surface during operation of the optical system lie in the range of 45°±5°. The beam splitter is produced in [110] the crystal cut.

Abstract: A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask is provided in which an illumination field of the mask is illuminated by illumination radiation with an operating wavelength ? that was provided by an illumination system.

Abstract: The present application relates to a method for removing a particle from a photolithographic mask, including the following steps: (a) positioning a manipulator, which is movable relative to the mask, in the vicinity of the particle to be removed; (b) connecting the manipulator to the particle by depositing a connecting material on the manipulator and/or the particle from the vapor phase; (c) removing the particle by moving the manipulator relative to the photolithographic mask; and (d) separating the removed particle from the manipulator by carrying out a particle-beam-induced etching process which removes at least a portion of the manipulator.

Abstract: The invention relates to a method for measuring a photomask for semiconductor lithography, including the following steps: recording an aerial image of at least one region of the photomask, defining at least one region of interest, ascertaining structure edges in at least one region of interest, providing desired structures to be produced by the photomask, adapting the ascertained structure edges to the desired structures, and displacing the adapted structure edges by means of the results of a separate registration measurement.

Abstract: A modulation device includes: a signal splitter configured to generate: i) an M-bit wide partial signal comprising M more significant bits of an N-bit wide input signal; and ii) an L-bit wide partial signal comprising L less significant bits of the N-bit wide input signal, where L=N?M; a first modulation unit configured to generate a 1-bit wide pulse density modulation signal on the basis of the L-bit wide partial signal; a summation unit configured to generate an M-bit wide summation signal on the basis of the M-bit wide partial signal and the 1-bit wide pulse density modulation signal; and a second modulation unit configured to generate a 1-bit wide pulse width modulation signal on the basis of the M-bit wide summation signal.

Abstract: A measurement apparatus (10) for interferometrically determining a surface shape of a test object (14). A radiation source provides an input wave (42), a multiply-encoded diffractive optical element (60), which is configured to produce by diffraction from the input wave a test wave (66) that is directed at the test object and has a wavefront in the form of a free-form surface and at least one calibration wave (70), and a capture device (46). The calibration wave has a wavefront with a non-rotationally symmetric shape (68f), wherein cross sections through the wavefront of the calibration wave along cross-sectional surfaces each aligned transversely to one another have a curved shape. The curved shapes in the different cross-sectional surfaces differ in terms of an opening parameter. The capture device (46) captures a calibration interferogram formed by superimposing a reference wave (40) with the calibration wave after interaction with a calibration object (74).

Abstract: When detecting an object structure, at least one portion of the object is initially illuminated with illumination light of an at least partly coherent light source from at least one preferred illumination direction. At least one diffraction image of the illuminated portion is recorded by spatially resolved detection of the diffraction intensity of the illumination light, diffracted by the illuminated portion, in a detection plane. At least one portion of the object structure is reconstructed from the at least one recorded diffraction image using an iterative method. Here, the iteration diffraction image of a raw object structure is calculated starting from an iteration start value and said raw object structure is compared to the recorded diffraction image in each iteration step.

Abstract: The present application relates to an apparatus and to a method for removing at least a single particulate from a substrate, especially an optical element for extreme ultraviolet (EUV) photolithography, wherein the apparatus comprises: (a) an analysis unit designed to determine at least one constituent of a material composition of the at least one single particulate; and (b) at least one gas injection system designed to provide a gas matched to the particular constituent in an environment of the at least one single particulate; (c) wherein the matched gas contributes to removing the at least one single particulate from the substrate.

Abstract: A method for measuring a substrate for semiconductor lithography using a measuring device, wherein the measuring device comprises a recording device for capturing at least a partial region of the substrate and, wherein the distance between the substrate and an imaging optical unit of the recording device is varied while the partial region is captured by the recording device.