Abstract: Methods for determining metrology sites for products includes detecting corresponding objects in measurement data of one or more product samples, and aligning the detected objects are aligned. The methods also include analyzing the aligned objects, and determining metrology sites based on the analysis. Devices use such methods to determine metrology sites for products.

Abstract: The present application relates to a method for removing a particle from a photolithographic mask, including the following steps: (a) positioning a manipulator, which is movable relative to the mask, in the vicinity of the particle to be removed; (b) connecting the manipulator to the particle by depositing a connecting material on the manipulator and/or the particle from the vapor phase; (c) removing the particle by moving the manipulator relative to the photolithographic mask; and (d) separating the removed particle from the manipulator by carrying out a particle-beam-induced etching process which removes at least a portion of the manipulator.

Abstract: A method for analyzing the wavefront effect of an optical system includes: illuminating a measurement mask (110, 310) with illumination light, producing an interferogram in a specified plane using a diffraction grating (150) from a wavefront from the illuminated measurement mask and traveling through the optical system; and capturing the interferogram with a detector (170). Different angular distributions of the illumination light incident on the measurement mask are produced via a mirror arrangement of independently settable mirror elements. A plurality of interferograms are captured in a plurality of measurement steps, wherein these measurement steps differ respectively in angular distribution of the illumination light that is incident on the measurement mask.

Abstract: An imaging optical unit for EUV microlithography is configured so that, when used in an optical system for EUV microlithography, relatively high EUV throughput and high imaging quality can achieved.

Abstract: An arrangement of a microlithographic imaging device, such as one that operates in the EUV range, includes a holding device for holding an optical element. The optical element includes an optical surface and defines a plane of main extension, in which the optical element defines a radial direction and a circumferential direction. The holding device includes a base unit and more than three separate holding units. The base unit includes a plurality of support interface units, which are spaced apart from one another in the circumferential direction, for connecting the holding device to a support structure. The holding units are connected to the base unit and distributed along the circumferential direction and spaced apart from one another. The holding units hold the optical element with respect to the base unit.

Abstract: A method for producing a reflecting optical element for a projection exposure apparatus (1). The element has a substrate (30) with a substrate surface (31), a protection layer (38) and a layer partial system (39) suitable for the EUV wavelength range. The method includes: (a) measuring the substrate surface (31), (b) irradiating the substrate (30) with electrons (36), and (c) tempering the substrate (30). Furthermore, an associated reflective optical element for the EUV wavelength range, a projection lens with a mirror (18, 19, 20) as reflective optical element, and a projection exposure apparatus (1) including such a projection lens.

Abstract: An arrangement of a microlithographic optical imaging device includes first and second supporting structures. The first supporting structure supports at least one optical element of the imaging device via an active relative situation control device of a control device. The first supporting structure supports the second supporting structure via supporting spring devices of a vibration decoupling device. The supporting spring devices act kinematically parallel to one another. Each supporting spring device defines a supporting force direction and a supporting length along the supporting force direction. The second supporting structure supports a measuring device of the control device. The measuring device is connected to the relative situation control device. The measuring device outputs to the relative situation control device measurement information representative for the position and/or the orientation of the at least one optical element in relation to a reference in at least one degree of freedom in space.

Abstract: A projection exposure apparatus for semiconductor technology includes an optical arrangement with an optical element having an optically effective surface. The optical arrangement also includes an actuator embedded in the optical element. The actuator is outside the optically effective surface and outside the region located behind the optically effective surface. The optical arrangement is set up to deform the optically effective surface.

Abstract: An optical arrangement for a lithography apparatus has a microsystem with a mirror array. A respective mirror of the mirror array is set up to reflect working light of the lithography apparatus on its front side and also a measuring beam on its rear side. One or more radiation sources, which are provided outside the microsystem, are set up to provide the respective measuring beam. One or more sensor units are set up to sense a tilting angle of a respective mirror in dependence on the respectively reflected measuring beam.

Abstract: The disclosed method involves: recording, under illumination of a diffractive measurement structure via an illumination device, a plurality of diffraction images which differ from one another in terms of the region of the measurement structure that contributes to the respective diffraction image, and ascertaining transmission properties and/or reflection properties of the diffractive measurement structure based on the plurality of diffraction images, wherein the steps of recording a plurality of diffraction images and of ascertaining transmission properties and/or reflection properties of the diffractive measurement structure in a plurality of recording sequences are carried out repeatedly in a plurality of recording sequences, wherein these recording sequences differ from one another with respect to the illumination angles that are respectively set during the illumination of the diffractive measurement structure and at which the diffractive measurement structure is illuminated.

Abstract: The present application relates to an apparatus for determining a position of at least one element on a photolithographic mask, said apparatus comprising: (a) at least one scanning particle microscope comprising a first reference object, wherein the first reference object is disposed on the scanning particle microscope in such a way that the scanning particle microscope can be used to determine a relative position of the at least one element on the photolithographic mask relative to the first reference object; and (b) at least one distance measuring device, which is embodied to determine a distance between the first reference object and a second reference object, wherein there is a relationship between the second reference object and the photolithographic mask.

Abstract: An inspection system serves to qualify semiconductor structures. The inspection system has an ion beam source for space-resolved exposition of the structures to be qualified with an ion beam. The inspection system also includes a secondary ion detection device with a mass spectrometer. The mass spectrometer is configured to measure an ion mass to charge ratio in a given bandwidth.

Abstract: In an optical system for a projection exposure apparatus, the angle space of the illumination radiation of the projection optical unit at the reticle is twice as large in a first direction as the angle space of the illuminating radiation of the illuminating optical unit.

Abstract: The disclosure provides a method that includes filling a cavity in a substrate with a second material, wherein the substrate includes a first material. The method also includes using galvanic and/or chemical deposition of a third material to apply an overcoating to a first surface of the substrate in a region of the cavity. The method further includes removing the second material from the cavity. In addition, the method includes, before or after removing the second material from the cavity, applying a reflective layer to the overcoating. The disclosure also provides related optical articles and systems.

Abstract: An optical arrangement for EUV lithography, including: at least one component (23) having a main body (32) with at least one surface region (30) which is exposed to activated hydrogen (H+, H*) during operation of the optical arrangement. The main body (32) contains at least one material which forms at least one volatile hydride upon contact of the surface region (30) with the activated hydrogen (H+, H*). At the surface region, noble metal ions (38) are implanted into the main body (32) in order to prevent the formation of the volatile hydride.

Abstract: A method for temperature control of a component that is transferable between a first system and a second system includes: ascertaining a temperature drift of a temperature of the component that is to be expected after transfer of the component from the first system into the second system; and modifying a temperature prevailing in the first system and/or a temperature prevailing in the second system such that the temperature drift that is actually occurring after transfer of the component from the first system into the second system is reduced with respect to the expected temperature drift.

Abstract: The present invention refers to a method for performing an aerial image simulation of a photolithographic mask which comprises the following steps: (a) modifying an optical radiation distribution at a patterned surface of the photolithographic mask, depending on at least one first arrangement of pixels to be generated in the photolithographic mask; and (b) performing the aerial image simulation of the photolithographic mask by using the generated modified optical radiation distribution.

Abstract: An optical arrangement of an imaging device for microlithography, particularly for using light in the extreme UV range, includes an optical element and a holding device for holding the optical element. The optical element includes an optical surface and defines a plane of main extension, in which the optical element defines a radial direction and a circumferential direction. The holding device includes a base element and more than three separate holding units. The holding units are connected to the base element and arranged in a manner distributed along the circumferential direction and spaced apart from one another. The holding units hold the optical element with respect to the base element. Each of the holding units establishes a clamping connection between the optical element and the base element. The clamping connection for each holding unit is separate from the clamping connections of the other holding units.

Abstract: A mirror that has a mirror substrate (12), a reflection layer stack (21) reflecting electromagnetic radiation incident on the optical effective surface (11), and at least one piezoelectric layer (16) arranged between the mirror substrate and the reflection layer stack and to which an electric field for producing a locally variable deformation is applied by way of a first electrode arrangement and a second electrode arrangement situated on alternate sides of the piezoelectric layer. In one aspect, both the first and the second electrode arrangements have a plurality of electrodes (20a, 20b), to each of which an electrical voltage relative to the respective other electrode arrangement can be applied via leads (19a, 19b). Separate mediator layers (17a, 17b) set continuous electrical potential profiles along the respective electrode arrangement, and where said mediator layers differ from one another in their average electrical resistance by a factor of at least 1.5.

Abstract: A mirror having a mirror substrate (12, 32, 52), a reflection layer stack (21, 41, 61) reflecting electromagnetic radiation having an operating wavelength that is incident on the optical effective surface (11, 31, 51), and at least one piezoelectric layer (16, 36, 56), arranged between the substrate and the reflection layer stack and to which an electric field producing a locally variable deformation is applied. A first electrode arrangement (20, 40, 60) situated on the side of the piezoelectric layer faces the reflection layer stack, and a second electrode arrangement (14, 34, 54) is situated on the side of the piezoelectric layer facing the mirror substrate. Optionally, a bracing layer (98) is provided, which limits sinking of the piezoelectric layer (96) into the mirror substrate (92) when an electric field is applied, in comparison with an analogous construction lacking the bracing layer, thereby increasing the piezoelectric layer's effective deflection.