Abstract: A light emitting diode (LED) structure includes a substrate, a first type semiconductor layer, a second type semiconductor layer, and a multi-quantum well light-emitting layer. The first type semiconductor layer is disposed on the substrate and has a patterned structure layer on a surface of the first type semiconductor layer away from the substrate. The multi-quantum well light-emitting layer is sandwiched between the patterned structure layer and the second type semiconductor layer and covers the patterned structure layer. The multi-quantum well light-emitting layer has multiple first thickness regions, multiple second thickness regions, and multiple transition regions. The first thickness region has a thickness greater than the second thickness region in a vertical direction from the first type semiconductor layer to the second type semiconductor layer. The transition region has a thickness that gradually decreases in a direction from the first thickness regions to the second thickness region.

Abstract: A micro LED and a manufacturing method thereof are provided. The micro LED includes a first semiconductor layer, an active layer, and a second semiconductor layer that are successively stacked together. The first semiconductor layer and the second semiconductor layer are of different types. The active layer includes a first quantum well layer and a second quantum well layer stacked together. The second quantum well layer and the second semiconductor layer form a nanoring. The first quantum well layer is configured to emit light of a first color. The second quantum well layer forming a sidewall of the nanoring is configured to emit light of a second color different from the first color. The first semiconductor layer is electrically coupled to a first electrode, and the second semiconductor layer is electrically coupled to a second electrode. A manufacturing method for a micro LED is provided.

Abstract: A detection structure and a detection method are provided. The method includes the following. A display backplane, a detection circuit board, and a detection light-emitting diode (LED) chip are provided. The detection circuit board is disposed on the display backplane, to connect a first detection line on the detection circuit board with a first contact electrode and connect a second detection line on the detection circuit board with a second contact electrode. A drive signal is output via the display backplane to the first detection line and the second detection line. A contact electrode pair on the display backplane corresponding to the detection LED chip is determined to be abnormal on condition that the detection LED chip is unlighted.

Abstract: A spherical flip-chip micro-LED, a method for manufacturing the spherical flip-chip micro-LED, and a display panel are provided. The spherical flip-chip micro-LED includes a light-emitting body, a supporting body, a first electrode, a second electrode, and an insulating protective layer. The supporting body is transparent. The first electrode and the second electrode are electrically coupled with the light-emitting body. The insulating protective layer covers the light-emitting body. The light-emitting body, the supporting body, and the insulating protective layer form a spherical structure.

Abstract: The present disclosure relates to a display panel and an electronic device. The display panel includes a driving array; first light-emitting deices electrically connected with the driving array; and second light-emitting devices located between at least two of the first light-emitting devices and electrically connected with the driving array. In a case where the first light-emitting devices are in a working state and the second light-emitting devices are in a first state, the display panel is in a first mode; and in a case where the first light-emitting devices are in a working state and the second light-emitting devices are in a second state, the display panel is in a second mode, wherein a visual angle of the display panel in the first mode is greater than 0 and smaller than a visual angle of the display panel in the second mode.

Abstract: A device, apparatus, and method for semiconductor transfer are provided. A transfer substrate is controlled to be moved to be above the target substrate. An infrared emitting portion emits infrared signals to position a semiconductor on a target substrate. After a second magnetic portion picks up the semiconductor from the target substrate, a controller outputs a first control current to a first electromagnetic portion to cause the first electromagnetic portion to generate an electromagnetic force, to control the second magnetic portion to adjust a position of the picked-up semiconductor relative to the welding position on the target substrate, where adjusting the position of the picked up semiconductor includes horizontal adjustment.

Abstract: The disclosure discloses a driving circuit and a display apparatus, wherein the driving circuit includes a substrate circuit and at least one standby circuit, and the at least one standby circuit is connected with the substrate circuit; the substrate circuit includes a first light-emitting device, a first driving unit and a first capacitor unit; the first driving unit is respectively connected with the first light-emitting device and the first capacitor unit; the first capacitor unit is charged through the first driving unit until a voltage value of the first capacitor unit meets a compensation voltage value of the first driving unit; after the charging of the first capacitor unit is completed, a first reference potential is coupled with the first capacitor unit to enable the first driving unit to obtain an adjustable trans-voltage, and the first driving unit outputs a stable current according to the adjustable trans-voltage to drive the first light-emitting device to work.

Abstract: Provided are a mass transfer device and a mass transfer method. The mass transfer device is provided with multiple channels, a first opening of each channel is arranged on a first surface of the mass transfer device, a second opening of each channel is arranged on a second surface of the mass transfer device, and the distances between the channels are gradually increased along a direction from the first surface to the second surface. In the provided mass transfer method, through a laser irradiation mode, the Micro-LEDs are separated from the first substrate and enter the channels of the mass transfer device through the first openings, and falling into Micro-LED to-be-installed positions on a second substrate through the second openings of the channels, thereby transferring the Micro-LEDs from the first substrate to the second substrate.

Abstract: A spherical LED chip, a method for manufacturing the same, and a display panel, and a method for spherical LED chip transfer are provided. The spherical LED chip includes a first electrode, a second electrode surrounding the first electrode and having magnetism, and a first insulating protective layer arranged at the outside of the first electrode. The first insulating protective layer and the second electrode form an LED housing configured to wrap the first electrode and with a spherical outer contour.

Abstract: A display device, a sub-pixel repair circuit and a repair method therefor. The sub-pixel repair circuit comprises a drive circuit module, a detection circuit module, a repair circuit module, a light-emitting device, and a standby light-emitting device; the drive circuit module is used for providing a drive current to the light-emitting device in response to a data signal of a data line and a scan signal of a scan line; the repair circuit module provides a drive current to the standby light-emitting device in response to a data signal provided by the drive circuit module and a short circuit signal or an open circuit signal provided by the detection circuit module. Thus, fault repair of the light-emitting device is implemented, and the display quality of a display device is improved.

Abstract: A system for detecting a light-emitting diode (LED) is provided. The system includes a first transparent substrate and multiple thin film transistors (TFT) disposed on the first transparent substrate and controlled separately, where the multiple TFTs are in one-to-one correspondence with LEDs to-be-detected in terms of location.

Abstract: Provided are a transfer method, a display device, and a storage medium. The transfer method includes: performing partial cutting on preset scribe lines (22) on an epitaxial layer to obtain to-be-transferred wafers (24) after cutting (S1); adhering a temporary substrate (26) on the to-be-transferred wafers (24) through adhering a first release adhesive (25) to first side faces of the to-be-transferred wafers (24), and removing a growth substrate (21) (S2); adhering the to-be-transferred wafers (24) to the blue tape (28) through adhering a second release adhesive (27) to second side faces of the to-be-transferred wafers (24), and removing the temporary substrate (26) (S3); jacking up the blue tape (28) with a roller so that remaining scribe lines (23) on the to-be-transferred wafers (24) are separated by breaking under action of stress (S4).

Abstract: A sub-pixel circuit, and an active electroluminescence display and a driving method thereof are provided. The sub-pixel circuit includes at least one electroluminescence device, and at least one first driving transistor or at least one second driving transistor and at least one third driving transistor coupled with the at least one electroluminescence device. A cathode of the electroluminescence device is coupled with a power source, an anode of the electroluminescence device is coupled with an output terminal of the first driving transistor, an input terminal of the first driving transistor is coupled with a signal line, and a control terminal of the first driving transistor is coupled with a scan line. Alternatively, the anode of the electroluminescence device is coupled with an output terminal of the second driving transistor, an input terminal of the second driving transistor is coupled with an output terminal of the third driving transistor.

Abstract: The present application relates to a voltage compensating circuit and a display. The voltage compensating circuit includes: an electroluminescence device; a driving unit, used for driving the electroluminescence device; a luminescence time length control unit, respectively connected with the driving unit and the electroluminescence device, and used for controlling luminescence time length of the electroluminescence device; and a compensation unit, respectively connected with the driving unit and the luminescence time length control unit, and used for providing a compensation voltage to the voltage compensating circuit. Through the voltage compensating circuit in the present application, a dropped voltage value is compensated, thereby brightness uniformity of the display is improved, and image quality is improved.

Abstract: A light emitting diode (LED) and a light purification method therefor are provided, which belong to the technical field of LED. The LED includes an epitaxial structure and a light purification layer plated on the epitaxial structure. The light purification layer includes a first reflection layer and defines multiple light-exiting holes. The first reflection layer is plated on the epitaxial structure. The multiple light-exiting holes each extend through the first reflection layer and have an aperture which is N times a preset wavelength of an exit light, N being an integer and N?1.

Abstract: An epitaxial structure, a preparation method thereof, and a light-emitting diode (LED) are provided. The epitaxial structure includes a sapphire substrate, a GaN layer, a defect exposure layer, and a defect termination layer stacked in sequence.

Abstract: A sub-pixel array and a display are provided. The sub-pixel structure includes a driving module, a first selection module, a second selection module, a switch module, a first light-emitting element, and a second light-emitting element. The first selection module is configured to control conduction between the driving module and an anode of the first light-emitting element or conduction between the driving module and an anode of the second light-emitting element through a first control signal. The second selection module is configured to control grounding of a cathode of the first light-emitting element or grounding of a cathode of the second light-emitting element through a second control signal.

Abstract: A method and device for automatic film expansion and a storage medium are provided. The method includes the following. Perform overall stretching on an expanded film. An interval between each two adjacent LED wafers on the expanded film is monitored in real time. When an interval between two adjacent LED wafers on the expanded film is greater than or equal to a preset target interval, stop performing overall stretching, and search the expanded film for a local region where an absolute difference between an interval between two adjacent LED wafers and the preset target interval is greater than a preset error threshold. When the local region exists on the expanded film, perform local stretching on the local region until an absolute difference between an interval between each two adjacent LED wafers in the local region and the preset target interval is less than or equal to the preset error threshold.

Abstract: The present disclosure provides a coating method and a coating system. The coating method comprises: providing a substrate, and dropping a first liquid onto the substrate; dropping, onto the first liquid, a second liquid which is immiscible with the first liquid and has a density greater than that of the first liquid; and rotating the substrate, such that the first liquid is diffused on the surface of the substrate, and the second liquid is diffused on the surface of the first liquid.

Abstract: The disclosure relates to a light-emitting diode chip and a manufacturing method thereof, and a display device. The light emitting diode chip includes a transparent substrate, an epitaxial layer, a first electrode and a second electrode. The epitaxial layer includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer. A containing groove is formed in the first semiconductor layer, and a metal layer is arranged in the containing groove. The metal layer is in ohmic contact with the first semiconductor layer. The second semiconductor layer is provided with an inclined groove, and the transparent substrate is combined with the first semiconductor layer. The first electrode is arranged in the inclined groove, and the second electrode is arranged on the second semiconductor layer.