Abstract: In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
Type:
Grant
Filed:
November 17, 2011
Date of Patent:
October 15, 2019
Assignee:
CRYSTAL IS, INC.
Inventors:
James R. Grandusky, Leo J. Schowalter, Shawn R. Gibb, Joseph A. Smart, Shiwen Liu
Abstract: In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.
Type:
Grant
Filed:
June 14, 2018
Date of Patent:
September 10, 2019
Assignee:
CRYSTAL IS, INC.
Inventors:
Leo J. Schowalter, Robert T. Bondokov, James R. Grandusky
Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
Type:
Grant
Filed:
August 24, 2017
Date of Patent:
August 27, 2019
Assignee:
CRYSTAL IS, INC.
Inventors:
Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
Abstract: In various embodiments, an illumination device features an ultraviolet (UV) light-emitting device at least partially surrounded by an encapsulant. A barrier layer is disposed between the light-emitting device and the encapsulant and is configured to substantially prevent UV light emitted by the light-emitting device from entering the encapsulant.
Abstract: In various embodiments, a fluid is treated by flowing the fluid through a flow cell having (i) a fluid entry, (ii) a fluid exit, (iii) a treatment region disposed between the fluid entry and exit, and (iv) an interior surface reflective to ultraviolet (UV) light, and diffusively reflecting UV light emitted from one or more UV light sources to illuminate the treatment region substantially uniformly, thereby treating the fluid.
Type:
Grant
Filed:
July 21, 2017
Date of Patent:
August 6, 2019
Assignee:
Crystal IS, Inc.
Inventors:
Jianfeng Chen, Rajul V. Randive, Craig Moe
Abstract: Heterojunction GaSb Photocells for operating in wavelengths around 1.6 microns have P type GaSb wafers with backside P+ back metal contacts. Patterned active areas are created on the front side and receive a thin passivation film. A thin N+ transparent SnO2 or tin conductive oxide is deposited on the passivation film. A front contact grid is deposited. The thin passivating film is either amorphous silicon (a-Si:H) or TiO2 with a hydrogen plasma pretreatment. The deposited N+ transparent SnO2 or tin conductive oxide forms an N+/P Heterojunction cell. Front grid contacts and full back contacts are deposited. An antireflective coating is applied through the grids.
Abstract: In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
Type:
Grant
Filed:
February 16, 2018
Date of Patent:
July 9, 2019
Assignee:
CRYSTAL IS, INC.
Inventors:
Ken Kitamura, Masato Toita, Hironori Ishii, Yuting Wang, Leo J. Schowalter, Jianfeng Chen, James R. Grandusky
Abstract: In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
Type:
Grant
Filed:
August 15, 2016
Date of Patent:
June 11, 2019
Assignee:
Crystal IS, Inc.
Inventors:
Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
Type:
Grant
Filed:
May 5, 2017
Date of Patent:
February 19, 2019
Assignee:
CRYSTAL IS, INC.
Inventors:
Craig Moe, James R. Grandusky, Shawn R. Gibb, Leo J. Schowalter, Kosuke Sato, Tomohiro Morishita
Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
Type:
Grant
Filed:
May 11, 2017
Date of Patent:
February 19, 2019
Assignee:
CRYSTAL IS, INC.
Inventors:
Craig Moe, James R. Grandusky, Shawn R. Gibb, Leo J. Schowalter, Kosuke Sato, Tomohiro Morishita
Abstract: A raw material solution (6), in which an organic semiconductor material is dissolved in a solvent, is supplied to a substrate (1). The solvent is evaporated so that crystals of the organic semiconductor material are precipitated. Thus, an organic semiconductor thin film (7) is formed on the substrate (1). An edge forming member (2) having a contact face (2a) on one side is used and located opposite the substrate (1) so that the plane of the contact face (2a) intersects the surface of the substrate (1) at a predetermined angle. The raw material solution (6) is supplied to the substrate (1) and formed into a droplet (6a) that comes into contact with the contact face (2a).
Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
Type:
Grant
Filed:
March 20, 2017
Date of Patent:
November 13, 2018
Assignee:
CRYSTAL IS , INC.
Inventors:
Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
Abstract: In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
Type:
Grant
Filed:
January 20, 2017
Date of Patent:
October 23, 2018
Assignee:
CRYSTAL IS, INC.
Inventors:
Robert T. Bondokov, Shailaja P. Rao, Shawn Robert Gibb, Leo J. Schowalter
Abstract: In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
Type:
Grant
Filed:
January 14, 2015
Date of Patent:
September 11, 2018
Assignee:
CRYSTAL IS, INC.
Inventors:
Leo J. Schowalter, Jianfeng Chen, James R. Grandusky
Abstract: Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
Type:
Grant
Filed:
August 8, 2016
Date of Patent:
May 15, 2018
Assignee:
CRYSTAL IS, INC.
Inventors:
Leo Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
Abstract: In various embodiments, a layer of organic encapsulant is provided over a surface of an ultraviolet (UV) light-emitting semiconductor die, and at least a portion of the encapsulant is exposed to UV light to convert at least some of said portion of the encapsulant into non-stoichiometric silica material. The non-stoichiometric silica material includes silicon, oxygen, and carbon, and a carbon content of the non-stoichiometric silica material is greater than 1 ppm and less than 40 atomic percent.
Type:
Grant
Filed:
July 23, 2015
Date of Patent:
April 3, 2018
Assignee:
CRYSTAL IS, INC.
Inventors:
Ken Kitamura, Masato Toita, Hironori Ishii, Yuting Wang, Leo J. Schowalter, Jianfeng Chen, James R. Grandusky
Abstract: Disclosed are apparatuses and methods for growing thin crystal fibers via optical heating. The apparatuses may include and the methods may employ a source of optical energy for heating a source material to form a molten zone of melted source material, an upper fiber guide for pulling a growing crystal fiber along a defined translational axis away from the molten zone, and a lower feed guide for pushing additional source material along a defined translational axis towards the molten zone. For certain such apparatuses and the methods that employ them, the lower feed guide's translational axis and upper fiber guide's translational axis are substantially aligned vertically and axially so as to horizontally locate the source material in the path of optical energy emitted from the optical energy source, in some cases to within a horizontal tolerance of about 5 ?m.
Abstract: In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
Type:
Grant
Filed:
September 16, 2016
Date of Patent:
October 31, 2017
Assignee:
CRYSTAL IS, INC.
Inventors:
Craig Moe, James R. Grandusky, Shawn R. Gibb, Leo J. Schowalter, Kosuke Sato, Tomohiro Morishita
Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
Type:
Grant
Filed:
April 13, 2015
Date of Patent:
September 26, 2017
Assignee:
CRYSTAL IS, INC.
Inventors:
Robert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb