Abstract: A temperature controlled chuck (20) includes a heating unit (24) and a cooling unit (34). A first cavity (30) separates the heating unit (24) from a wafer substrate (18), and a second cavity (50) separates the cooling unit (34) from the heating unit (24). A first fluid delivery system (60) conducts fluid to the first cavity (30) to facilitate exchanges of heat between the heating unit (24) and the substrate (18). A second fluid delivery system (70) conducts fluid to the second cavity (50) to facilitate exchanges of heat between the heating unit (24) and the cooling unit (34). A control system (90) raises the temperature of the substrate (18) by increasing power to the heating unit (24) and by evacuating fluid from the second cavity (50) and lowers the temperature of the substrate (18) by reducing power to the heating unit (24) and by conducting fluid to the second cavity (50).

Abstract: A system for rapid thermal processing of a substrate in a process chamber while measuring and controlling the temperature at the substrate to establish substantially uniform substrate temperature in real time. The system includes an axisymmetrical multi-zone illuminator having a plurality of substantially concentric rings of heating lamps to direct optical power toward said substrate, a fluid cooled optical reflector facing the substrate frontside and having a relatively high optical reflectivity. The system also includes a multizone temperature measurement system having a plurality of pyrometry sensors coupled to said multi-zone illuminator, a system for real-time measurement and compensation of substrate emissivity and illuminator lamp light interference effects, and a multi-variable temperature controller for providing multi-zone real-time temperature control. The system also incorpotates a plurality of illuminator lamp power supplies.

Abstract: A chuck body mounts a substrate within a vacuum chamber. Contiguous portions of the substrate and the chuck body form a heat-transfer interface. An intermediate sealing structure seals the chuck body to the substrate independently of any contact between the chuck body and the substrate and forms a separately pressurizable region within the vacuum chamber. A control system promotes flows of gas through a periphery of the heat-transfer interface within the separately pressurizable region for controlling gas pressures at the heat-transfer interface.

Abstract: A sputtering apparatus for depositing a thin film (66) of magnetic material on a substrate (26) is modified to include a plate-shaped electromagnet (34, 44, or 70) for orienting magnetic domains within the film (66). The electromagnet (34, 44, or 70) has conductive windings (38; 46, 48, and 50; or 72) that are arranged for producing a magnetic field (42 or 52) within a plane (60) corresponding to a surface of the substrate (26). Field strength vectors (68) vary in absolute magnitude between points located along a first axis (62), but have substantially uniform components of magnitude at the same points measured in a common direction along the first axis (62).

Abstract: A temperature controlled chuck (20) includes a heating unit (24) and a cooling unit (34). A first cavity (30) separates the heating unit (24) from a wafer substrate (18), and a second cavity (50) separates the cooling unit (34) from the heating unit (24). A first fluid delivery system (60) conducts fluid to the first cavity (30) to facilitate exchanges of heat between the heating unit (24) and the substrate (18). A second fluid delivery system (70) conducts fluid to the second cavity (50) to facilitate exchanges of heat between the heating unit (24) and the cooling unit (34). A control system (90) raises the temperature of the substrate (18) by increasing power to the heating unit (24) and by evacuating fluid from the second cavity (50) and lowers the temperature of the substrate (18) by reducing power to the heating unit (24) and by conducting fluid to the second cavity (50).

Abstract: A high magnetic flux permanent magnet array apparatus and method for high productivity physical vapor deposition includes a magnetron array with a plurality of magnet assemblies disposed proximate to a target. Each assembly comprises a first portion magnetized perpendicularly to the target, a second portion magnetized perpendicularly to the target and opposite the first portion, and a third portion positioned intermediate the first and second portions, the third portion magnetized parallel to the target.

Abstract: A multizone illuminator rapid thermal processing system for fabricating a semiconductor device having a face on which an electronic medium is deposited. The system includes a processing chamber for establishing a semiconductor device fabrication environment for rapid thermal processing, an optically reflective gas injector for injecting a process gas into the semiconductor device fabrication environment, a semiconductor device holding mechanism for holding the semiconductor device in the semiconductor device fabrication environment, and a multizone illuminator positioned in association with the process chamber for illuminating the backside of the semiconductor device to perform a rapid semiconductor thermal process. The system can also include a multipoint temperature sensor system used in conjunction with a multizone variable temperature controller to increase dynamic temperature uniformity and repeatability control.

Abstract: A sputtering apparatus for depositing a thin film (66) of magnetic material on a substrate (26) is modified to include a plate-shaped electromagnet (34, 44, or 70) for orienting magnetic domains within the film (66). The electromagnet (34, 44, or 70) has conductive windings (38; 46, 48, and 50; or 72) that are arranged for producing a magnetic field (42 or 52) within a plane (60) corresponding to a surface of the substrate (26). Field strength vectors (68) vary in absolute magnitude between points located along a first axis (62), but have substantially uniform components of magnitude at the same points measured in a common direction along the first axis (62).

Abstract: A sputtering system magnetron formed of an array of permanent magnets rotated in proximity to a plane of a target disposed in a vacuum chamber has an improved shape resembling a cross section of an apple. The magnetic path established between oppositely poled pairs of magnets is inturned in a stem region proximate to the axis of rotation for the array and has a pair of opposed lobes extending outward from the stem region in a generally semi-circular form. The lobes lead to and join each other in an indent region opposite the stem region. The maximum distance across the path between the lobes is about double the minimum distance across the path between the stem region and the indent region.