Abstract: The present invention provides a non-cyanide based Au—Sn alloy plating solution capable of performing a Au—Sn alloy plating treatment by a plating solution composition that is neutral and does not contain cyanide. In the present invention, a non-cyanide soluble gold salt, a Sn compound composed of tetravalent Sn, and a thiocarboxylic acid-based compound are contained. The non-cyanide based Au—Sn alloy plating solution of the present invention can further contain sugar alcohols, and, in addition, can further contain a dithioalkyl compound.

Abstract: A laminate structure of metal coating is laminated on a base material, and includes a primer layer, a catalyst layer and a plating deposited layer. The primer layer is a resin layer with a glass transition temperature (Tg) of 40 to 430° C. The catalyst layer is a metal nanoparticle group arranged in a plane on the primer layer, wherein the metal nanoparticle group is a metal in Group 11 or Groups 8, 9 and 10 in a periodic table, and the metal nanoparticles are surrounded by the primer layer. Ends of the metal nanoparticles are attached to the plating deposited layer.

Abstract: The pretreatment solution for electroless plating of the present invention is composed of noble metal colloidal nanoparticles, a sugar alcohol, and water. The colloidal nanoparticles are gold, platinum, or palladium, have an average particle diameter of 5 to 80 nm, and are contained in the pretreatment solution in an amount of 0.01 to 10 g/L as metal mass. The sugar alcohol is at least one selected from the group consisting of tritol, tetritol, pentitol, hexitol, heptitol, octitol, inositol, quercitol, or pentaerythritol and is contained in the pretreatment solution in an amount of 0.01 to 200 g/L in total. The electroless plating method of the present invention uses the pretreatment solution and performs the electroless plating in an electroless plating bath.

Abstract: The present invention provides a non-cyanide based Au—Sn alloy plating solution capable of performing a Au—Sn alloy plating treatment by a plating solution composition that is neutral and does not contain cyanide. In the present invention, a non-cyanide soluble gold salt, a Sn compound composed of tetravalent Sn, and a thiocarboxylic acid-based compound are contained. The non-cyanide based Au—Sn alloy plating solution of the present invention can further contain sugar alcohols, and, in addition, can further contain a dithioalkyl compound.

Abstract: The present invention provides a non-cyanogen type electrolytic gold plating solution, which can form a plating film capable of maintaining a high hardness even when the plating film is subjected to a heat treatment. A non-cyanogen type electrolytic gold plating solution of the present invention includes: a gold source including an alkaline salt of gold sulfite or ammonium of gold sulfite; and a conductive salt including sulfite and sulfate. The non-cyanogen type electrolytic gold plating solution includes a salt of at least one of iridium, ruthenium, and rhodium in a metal concentration of 1 to 3000 mg/L. Further, the non-cyanogen type electrolytic gold plating solution preferably includes a crystal adjuster. The crystal adjuster is particularly preferably thallium.

Abstract: It is an object of the present invention to provide an electroless gold plating solution capable of directly subjecting a plated coating film made of an underlying metal such as nickel or palladium to gold plate processing, of forming a thick gold plated coating film having a thickness of 0.1 ?m or more, of forming a uniform gold plated coating film, and of safely performing plating work. The present invention relates to an electroless gold plating solution comprising: a water-soluble gold compound; and hexahydro-2,4,6-trimethyl-1,3,5-triazine or hexamethylenetetramine. Preferably, the electroless gold plating solution comprises 0.1 to 100 g/L of hexahydro-2,4,6-trimethyl-1,3,5-triazine or hexamethylenetetramine.

Abstract: The invention provides a plating solution capable of forming a palladium plating film which can further improve solder characteristics in surface treatment of a composition made of a nickel plating film, a palladium plating film and a gold plating film on a surface of a conductor formed from a metal such as copper. In a palladium plating solution of the invention containing a soluble palladium salt and an electrically conductive salt having a liquid composition containing germanium, the amount of the soluble palladium salt is 0.1 g/l to 50 g/l in terms of a reduced value of palladium metal, the amount of the electrically conductive salt is 10 g/l to 400 g/l and the amount of the germanium is 0.1 mg/l to 1000 mg/l.

Abstract: The present invention provides a technology for enabling a diaphragm to be arranged in a more facilitated manner in a plating tank of a plating apparatus having a diaphragm for separating an object to be plated from an anode.

Abstract: In the invention, there is provided a plating treatment technique which permits uniform plating treatment and easy replacement of articles to be plated without the effect of bubbles in a plating solution by improving wet plating apparatuses of the contact type to thereby solve problems such as the removal of bubbles in a plating solution and the removal of an adhering plating solution. Provided is a plating apparatus having a plating tank, which comprises: an opening which has a solution seal to prevent a plating solution from leaking when an article to be plated is placed on the opening; a solution-supply portion which supplies the plating solution; a solution-discharge portion which discharges the plating solution; and an anode which is opposed to the article to be plated that is placed, wherein the plating tank has rotational means for rotating the plating tank itself.

Abstract: A cup type plating apparatus in which plating is carried out by supplying plating solution to a wafer placed on an opening at a top of a plating tank while an anode and the wafer connected to a cathode provided in the plating tank are electrically connected, and the anode and the cathode are separated by diaphragm provided in the plating tank, provided with a division wall between the anode and the wafer formed in a shape capable of separating the anode and the wafer from each other and having a plurality of openings covered with diaphragm. The concentration of the plating solution supplied to the plating tank separated by the division wall is made to be appropriately controllable. Further, a unit for stirring is provided capable of forcibly altering the flow of plating solution at the target surface of plating.

Abstract: A plating apparatus is provided to allow the whole area of a target plating surface of a wafer to be subjected to more uniform plating treatment and moreover enables a target plating surface of a wider area to be subjected to positive and uniform plating treatment. In the plating apparatus which has a stirring bar within a plating tank and which performs plating treatment of a target plating surface of the wafer while stirring a plating solution near the target plating surface of the wafer by moving the stirring bar, the stirring bar is rotated while being oscillated in a motion plane substantially parallel to the target plating surface of the wafer. By this operation, the occurrence of an eddy flow of the plating solution is suppressed during stirring and it becomes possible to positively carry out more uniform plating treatment of a wider region.

Abstract: The present invention provides a non-cyanide displacement gold plating solution with which even an electroless nickel-boron plated or electrolytic nickel plated substrate can be subjected to displacement gold plating with good adhesion properties and high solderability. The displacement gold plating solution in accordance with the present invention contains 0.01 to 1.0 g/L (expressed in terms of gold concentration) of sodium gold sulfite or ethylene diamine complex of sodium gold sulfite, 10 to 100 g/L of sulfite, 5 to 50 g/L of organic carboxylic acid or salt thereof, and 5 to 50 g/L of ethylene diamine tetraacetic acid or salt thereof, and has a pH value in the weak acid range of 4.5 to 6.

Abstract: A wafer plating apparatus includes a wafer clamp for holding a wafer, a wafer support member for supporting the peripheral edge of the surface to be plated, and a plating tank which circulates a plating solution while making the plating solution overflow from an upper opening of the tank. The wafer plating apparatus is arranged to perform plating, while the surface to be plated is laid face down, being in contact with the surface of the plating solution, in a state in which the wafer is clamped by the wafer clamp and the wafer support member. The wafer support member is equipped with air-vent grooves for discharging the air which remains on the peripheral edge of the surface to be plated while the surface of the plating solution and the wafer make contact. The air-vent grooves are formed at the lower end of the wafer support portion.

Abstract: The present cup-type plating apparatus improves a conventional cup-type plating apparatus and prevents the surface of a wafer due to a mist of the plating solutions from being contaminated. A plating solution is supplied to a wafer which is placed on a wafer support provided along an opening at the top of a plating tank from a solution-supply port provided at the bottom of the plating tank by an upward-moving stream; the plating solution is made to flow out of a solution-outlet port provided for the plating tank; and plating is performed while the plating solution is brought into contact with a surface of the placed wafer, which is to be plated, wherein the solution-outlet port has a solution-outlet path in which the discharged plating solution is isolated from the outer space.

Abstract: The present invention provides a copper plating solution for embedding fine wiring, wherein it contains copper sulfate at 100 to 300 g/L as copper sulfate pentahydrate, sulfuric acid at 5 to 300 g/L, chlorine at 20 to 200 mg/L, a macromolecular surfactant at 0.05 to 20 g/L for controlling the electrodeposition reaction, sulfur-based saturated organic compound at 1 to 100 mg/L for accelerating the electrodeposition reaction, leveling agent composed of a macromolecular amine compound at 0.01 to 10 mg/L and reductant at 0.025 to 25 g/L for stabilizing the copper plating solution. The copper plating solution of the present invention for embedding fine wiring can plate the wafer surface provided with fine wiring patterns with sub-micron order gaps in-between and coated with copper serving as the metallic seed film, to fill the gaps neither leaving any defect therein nor dissolving the metallic seed film.

Abstract: A non-cyanide electrolytic gold plating solution excellent in its solution stability, and a method for gold plating using thereof. A non-cyanide electrolytic gold plating solution according to the present invention containing a trivalent gold compound which is a gold hydroxide salt and/or chloroaurate salt; a chelating agent which is a hydantoin compound of imidazolidinedione, 5,5-dimethylhydantoin, or hydantoic acid; a buffer; and a conductive salt, wherein the concentration of the gold in the gold plating solution is 0.5 to 30 g/L, the concentration of the chelating agent in the gold plating solution is 0.1 to 2.5 M/L, and pH is 5.0 to 10.0.

Abstract: This invention provides a technique capable of solving a problem of an ununiform plating on an annular edge portion of a surface to be plated of a wafer, which ununiform plating is usually caused due to an ununiform flow of a plating apparatus, thereby ensuring a uniform plating treatment on the entire surface to be plated of a wafer. The present invention is directed to a cup-shaped plating apparatus comprising a wafer support section provided along an upper opening of a plating tank, a plurality of solution-outlet passages provided below the wafer support section and extending from the inside of and to the outside of the plating tank and at least one solution-supply pipe provided through the bottom of the plating tank.

Abstract: A cup type plating apparatus in which plating is carried out by supplying plating solution to a wafer placed on an opening at a top of a plating tank while an anode and the wafer connected to a cathode provided in the plating tank are electrically connected, and the anode and the cathode are separated by a diaphragm provided in the plating tank, provided with a division wall between the anode and the wafer formed in a shape capable of separating the anode and the wafer from each other and having a plurality of openings covered with a diaphragm. The concentration of the plating solution supplied to the plating tank separated by the division wall is made to be appropriately controllable. Further, a unit for stirring is provided capable of forcibly altering the flow of plating solution at the target surface of plating.

Abstract: This invention provides a technique capable of solving a problem of an ununiform plating on an annular edge portion of a surface to be plated of a wafer, which ununiform plating is usually caused due to an ununiform flow of a plating solution in a conventional cup-type plating apparatus, thereby ensuring a uniform plating treatment on an entire surface to be plated of a wafer. In detail, the present invention is directed to a cup-type plating apparatus comprising a wafer support section 2 provided along an upper opening of a plating tank 1, a plurality of solution-outlet passages 7 provided below the wafer support section 2 and extending from the inside of and to the outside of the plating tank 1, at least one solution-supply pipe 6 provided through the bottom of the plating tank 1.

Abstract: A cup type plating apparatus in which plating is carried out by supplying plating solution to a wafer placed on an opening at a top of a plating tank while an anode and the wafer connected to a cathode provided in the plating tank are electrically connected, and the anode and the cathode are separated by diaphragm provided in the plating tank, provided with a division wall between the anode and the wafer formed in a shape capable of separating the anode and the wafer from each other and having a plurality of openings covered with diaphragm. The concentration of the plating solution supplied to the plating tank separated by the division wall is made to be appropriately controllable. Further, a unit for stirring is provided capable of forcibly altering the flow of plating solution at the target surface of plating.