Abstract: The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a silicon substrate having several through-silicon-vias therein; a first semiconductor layer located in each through-silicon-via and on the silicon substrate, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer, where a conductivity type of the second semiconductor layer is opposite to that of the first semiconductor layer, a material of the first semiconductor layer a group III nitride, a material of the active layer a group III nitride, and a material of the second semiconductor layer include a group III nitride.

Abstract: The present disclosure provides a semiconductor structure, including: a substrate structure; an epitaxial structure on the substrate structure, where the epitaxial structure includes at least one heterojunction structure sequentially stacked in a direction away from the substrate structure; each of the at least one heterojunction structure includes a channel layer and a barrier layer, the epitaxial structure includes a gate region, and in each of the at least one heterojunction structure, a part of the barrier layer corresponding to the gate region is removed to form a hole; a gate electrode on the gate region, where the gate electrode fills the hole, and surrounds the channel layer; and a source electrode and a drain electrode respectively at two sides of the gate electrode.

Abstract: A semiconductor structure, comprising: a semiconductor substrate, a heterojunction, an in-situ insulating layer and a transition layer, which are arranged in sequence from bottom to top; a groove, passing through the in-situ insulating layer and the transition layer; and a P-type semiconductor layer, disposed in the groove and in a gate region on the transition layer, wherein the P-type semiconductor layer does not fully fill the groove. A method of manufacturing semiconductor structure is further disclosed.

Abstract: This application provides a semiconductor structure and substrate thereof, a method of manufacturing the semiconductor structure and substrate thereof. The substrate includes a plurality of unit areas, each of the unit areas includes at least two subunit areas, each of the subunit areas is provided with a groove, the groove is opened from a back side of the substrate; and in one of the unit areas, preset opening ratios of the subunit areas are different. A light-emitting layer is grown on a front side of the substrate; and in one of the unit areas, light-emitting wavelengths of the light-emitting layer in the subunit areas are different.

Abstract: The present application discloses a semiconductor structure including: a base, the base being made of an amorphous material and including at least one trench; a monocrystalline layer, at least part of the monocrystalline layer being provided in the trench; and an epitaxial structure layer, located on the side of the monocrystalline layer away from the base. The semiconductor structure disclosed in the present application includes the monocrystalline layer formed in the at least one trench of the base, and an amorphous material with a thermal expansion coefficient similar to that of the monocrystalline layer is selected as the base, which can relieve the tensile stress generated by the monocrystalline layer during the epitaxial process. At the same time, the epitaxial structure layer is grown on an independent monocrystalline layer, and the size is small, which alleviates the problem of semiconductor film cracking on the large-size substrate.

Abstract: Disclosed are a manufacturing method for an epitaxial substrate, an epitaxial substrate, and a semiconductor structure. The manufacturing method includes: patterning a substrate to form a trench; manufacturing a transition layer in the trench, and performing crystal plane transformation processing on the transition layer based on a shape of the trench, so as to transform the transition layer into a single crystal layer, where a surface, away from the substrate, of the single crystal layer is a (111) crystal plane. Based on different shapes of the trench on the substrate, the transition layer is controlled to obtain a single crystal layer of a specific crystal plane after the crystal plane transformation processing, and a surface, away from the substrate, of the single crystal layer, is a (111) crystal plane. The (111) crystal plane of the single crystal layer facilitates subsequent epitaxial manufacturing of a semiconductor structure.

Abstract: Disclosed is a semiconductor structure. The semiconductor structure includes: a multiple quantum well layer including a quantum barrier layer and a quantum well layer which are alternately arranged; and a protective layer formed on the quantum well layer, where the protective layer is made of an oxygen-doped nitride material. In the present disclosure, the presence of the oxygen-doped protective layer may achieve a longer luminous wavelengths through an InGaN quantum well material with a lower In component.

Abstract: Disclosed are a semiconductor structure and a preparation method thereof. The semiconductor structure comprises a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer, and a third nitride semiconductor layer formed on the second nitride semiconductor layer with a groove penetrating through the third nitride layer. In the present disclosure, by etching the groove on the third nitride semiconductor layer of P-type doping, and then secondarily extending selectively a N-type doped source region in the groove, the sharp P-N interface formed between the third nitride semiconductor layer and the second nitride semiconductor layer can further help control the shape of the groove, reduce the on-resistance and improve the breakdown voltage of the semiconductor structure.

Abstract: The present disclosure provides a vertically conductive semiconductor structure, including a heavily doped layer, a first semiconductor layer, a second semiconductor layer and an ion implanted region in the second semiconductor layer. Conductivity types of the heavily doped layer and the first semiconductor layer are same, and conductivity types of the first semiconductor layer and the second semiconductor layer are opposite. Materials of the first semiconductor layer and the second semiconductor layer are GaN-based materials. Conductivity types of the ion implanted region and the second semiconductor layer are opposite. The ion implanted region includes a first end and a second end that are opposite to each other. The first end is flush with a surface of the second semiconductor layer far from the first semiconductor layer, and the second end connects the first semiconductor layer. A width of the ion implanted region from bottom to top varies.

Abstract: The present disclosure provides a light sensing unit, a gallium nitride (GaN)-based image sensor, and a display apparatus thereof. The light sensing unit includes: red, green, and blue light sensing sub-units, where materials of a light sensing layer of each of the light sensing sub-units are GaN-based materials containing indium(In). The materials of the light sensing layers may contain different contents of In, such that the light sensing sub-units are enabled to generate or not generate light sensing electrical signals according to different wave lengths of received light. During a GaN-based material growth process, the contents of In in different regions are controlled to prepare the light sensing sub-units at the same time to increase integration degrees of the light sensing unit, the GaN-based image sensor, and the display apparatus containing the light sensing unit to achieve miniaturization.

Abstract: Disclosed is an image sensor. The image sensor includes at least one photosensitive unit including at least two photosensitive layers stacked and not completely overlapped, a region where each photosensitive layer is not overlapped with other photosensitive layers being configured to arrange an electrode wire, and photosensitive component contents of the at least two photosensitive layers being different. According to the present disclosure, a wavelength range of sensible light of each photosensitive unit may be enlarged, so that more image details may be recorded, images with a high dynamic range may be generated, and people may experience a visual effect close to a real environment. In addition, as there is no need to reduce a photosensitive area of the photosensitive layer for arranging the electrode wires, the photosensitive area of the photosensitive layer is increased and thereby a dynamic range of the image sensor is improved.

Abstract: A semiconductor structure includes: a first semiconductor layer, including a first surfaces and a second surfaces opposite to the first surface; a second semiconductor layer, disposed on the first semiconductor layer, where a conductive type of the second semiconductor layer is the same as that of the first semiconductor layer, and a doping concentration of the second semiconductor layer is less than that of the first semiconductor layer; grooves, formed in the second semiconductor layer; and a third semiconductor layer, where a conductive type of the third semiconductor layer is different from that of the second semiconductor layer, a material of the third semiconductor layer is different from that of the second semiconductor layer, and at least a portion of the third semiconductor layer is disposed in the grooves.

Abstract: A light emitting device includes: a first substrate; a light emitting structure layer located on the first substrate; and an insertion layer located on the light emitting structure layer, a surface, away from the light emitting structure layer, of the insertion layer is a roughened surface, and the insertion layer has a protective effect on the light emitting structure layer. In the light emitting device provided by the present disclosure, the surface, away from the light emitting structure layer, of the insertion layer is the roughened surface, and the insertion layer has the protective effect on the light emitting structure layer during a peeling off process, which solves problems of reduced yield and reduced light extraction efficiency of a light emitting device.

Abstract: Disclosed are a semiconductor structure and a method for manufacturing a semiconductor structure, the method includes: forming a first transition layer, a protection layer and an active structure layer sequentially epitaxially on a side of a growth substrate, where a surface, away from the growth substrate, of the first transition layer is a two-dimensional flat surface; on a first plane, an orthographic projection of the active structure layer is at least partially covered by an orthographic projection of the protection layer, and the first plane is perpendicular to an arrangement direction of the protection layer and the active structure layer; detaching the growth substrate by a laser lift-off process, to make the epitaxial layer transferred to a transfer substrate; etching the first transition layer up to the protection layer, to make a surface, away from the active structure layer, of the protection layer to be a planarization surface.

Abstract: Disclosed is a semiconductor structure, including a substrate; a V-shaped groove layer, a V-shaped groove enlargement layer and a semiconductor epitaxial layer stacked from bottom to top; a first V-shaped groove arranged on a surface of the V-shaped groove layer close to the V-shaped groove enlargement layer; a second V-shaped groove arranged on a surface of the V-shaped groove enlargement layer close to the semiconductor epitaxial layer, where a size of the second V-shaped groove is greater than a size of the first V-shaped groove In the present disclosure, a lateral epitaxy effect of the V-shaped groove enlargement layer and the semiconductor epitaxial layer is realized for two times, which makes dislocation fully bend, effectively improving crystal quality. Meanwhile, the first V-shaped groove and the second V-shaped groove are self-formed during an epitaxial growth process, which greatly reduces preparation cost and improves preparation efficiency.

Abstract: The present disclosure provides a semiconductor structure, including: a substrate, a first-type mask layer, a second-type mask layer, and an epitaxial layer; where the first-type mask layer includes a first mask multilayer, the first mask multilayer includes a first mask layer and a second mask layer, the first mask layer includes a first window, the second mask layer includes a second window communicating with the first window, the second window and the first window constitute a first-type window, and a cross-section of the second window is larger than that of the first window; the second-type mask layer is located on a side of the first-type mask layer away from the base; the second-type mask layer includes a second-type window communicating with the first-type window, and a cross-section of the second-type window is smaller than that of the second window.

Abstract: A light emitting device includes: a substrate; a DBR mask layer on a side of the substrate, the DBR mask layer being provided with a window exposing the substrate, the window including an opening end away from the substrate and a bottom wall end close to the substrate, and on a plane where the substrate is located, an orthographic projection of the opening end falling within an orthographic projection of the bottom wall end; and a light emitting unit. The light emitting unit includes an active layer located on a side, away from the substrate, of the DBR mask layer. Providing the window on the DBR mask layer may reduce dislocation density during epitaxial growth of the light emitting unit, and arrangement of the DBR mask layer may improve light extraction efficiency of the light emitting device.

Abstract: Disclosed is an image sensor, comprising: at least one photosensitive unit, where the photosensitive unit includes a main photosensitive region and an auxiliary photosensitive region arranged at the periphery of the main photosensitive region, and a photosensitive component content of the main photosensitive region is different from a photosensitive component content of the auxiliary photosensitive region. The disclosure enlarges a wavelength range of sensible light of each the photosensitive unit by arranging the auxiliary photosensitive region at the periphery of the main photosensitive region of the photosensitive unit, where the photosensitive component content of the main photosensitive region is different from that of the auxiliary photosensitive region. Thereby more image details may be recorded to generate images with high dynamic range, which enables people to experience a visual effect close to a real environment.

Abstract: In the present disclosure, a semiconductor structure and a manufacturing method of the semiconductor structure are provided. The semiconductor structure includes a base, a first mask layer, a first epitaxial layer, and a second epitaxial layer. The first mask layer is located on the base, and the first mask layer has a first window that exposes the base. The first window includes an opening end far from the base and a bottom wall end close to the base. On the plane where the base is located, the orthographic projection of the opening end falls within the bottom wall end.

Abstract: An epitaxial structure of a light-emitting device and a manufacturing method thereof are provided. The epitaxial structure of the light-emitting device includes a first semiconductor layer, an active region and a second semiconductor layer sequentially stacked; where the active region includes at least one group of a barrier layer and a quantum well layer which are stacked, a surface of the quantum well layer away from the first semiconductor layer has a first roughness, a surface of the barrier layer away from the first semiconductor layer has a second roughness, and the first roughness is greater than the second roughness.