Abstract: The present invention provides a halogen-free dry film photosensitive resin composition, which comprises (a) 10˜60 wt % of at least two kinds of acrylic resins having unsaturated carboxylic acid monomers as polymerized units; (b) 5˜20 wt % of a photosensitive resin having at least two (meth)acrylate groups; (c) 0.1˜15 wt % of a photoinitiator; and (d) 0.5˜20 wt % of a thermo-curing agent. The resin composition of the invention is suitable for use as a photoresist in the process of producing printed circuit boards. The resin composition of the invention is particularly suitable for use in the surface of printed circuit boards or semiconductor packages as a protective dry film solder mask.

Abstract: An optical sheet includes a substrate, a light diffusion layer formed on the substrate, and a light gathering layer formed on the light diffusion layer. The light diffusion layer includes a polymeric resin having a plurality of bubbles mixed therein. The light gathering layer has at least one microstructure. The optical sheet of the subject invention can be used in LCDs as a photo-diffusive brightness enhancement film.

Abstract: An optical sheet includes an substrate having a first surface and a second surface opposite to the first surface, a light gathering layer formed on the first surface of the substrate, and an light diffusion layer formed on the second surface of the substrate. The light diffusion layer includes a polymeric resin having a plurality of bubbles mixed therein. The optical sheet of the subject invention can be used in LCDs as a photo-diffusive brightness enhancement film.

Abstract: The invention pertains to a resin composition comprising a polymer and a solvent, characterized in that the polymer is obtained by polymerizing the following monomers: (a) an acrylate monomer; (b) a tertiary carboxylic ester; and (c) a monomer selected from the group consisting of a fluoro acrylate monomer, a silicone monomer, and a mixture thereof. The resin composition of the invention can be formulated into a coating for a substrate to impart stain resistance to the coated surface.

Abstract: The invention pertains to a resin composition comprising a polymer and a solvent, characterized in that the polymer is obtained by polymerizing the following monomers: (a) an acrylate monomer; (b) a tertiary carboxylic ester; and (c) a monomer selected from the group consisting of a fluoro acrylate monomer, a siloxane monomer, and a mixture thereof. The resin composition of the invention can be formulated into a coating for a substrate to impart stain resistance to the coated surface.

Abstract: The present invention relates to a chemical mechanical abrasive slurry for polishing a color photoresist, comprising composite abrasive particles and an aqueous medium. The abrasive slurry of the present invention can effectively polish off horn-like protuberances color filter processing.

Abstract: The invention provides a chemical mechanical abrasive slurry for use in semiconductor processing. The slurry comprises composite abrasive particles consisting of substrate particles coated with alumina. The invention further relates to a chemical mechanical polishing method of using said slurry in polishing the surfaces of semiconductor wafers.

Abstract: The invention pertains to a polymer of formula (I): wherein R1, R2, R5, n and G arc as those defined in the specification. The invention also pertains to the preparation of the polymer and the use of the polymer as an alignment layer material in liquid crystal displays.

Abstract: The invention provides a chemical-mechanical polishing process for polishing the surface of a semiconductor wafer, which comprises the steps of separately preparing a chemical agent and an abrasive agent, combining them into an abrasive slurry at the beginning of the polishing procedure or at the platen end, and polishing the metal layer on the surface of the semiconductor wafer with said admixed abrasive slurry. The invention further provides a chemical-mechanical polishing slurry for polishing the surface of a semiconductor wafer, characterized by being prepared by the steps of separately preparing a chemical agent and an abrasive agent and then combining them at the beginning of the polishing procedure or at the platen end, wherein said chemical agent comprises an aqueous medium, a corrosion inhibitor, and an ionic surfactant, and said abrasive agent comprises abrasive particles and deionized water.

Abstract: The invention pertains to a resin composition comprising a polymer and a solvent, characterized in that the polymer is obtained by polymerizing the following monomers:

Abstract: New aromatic diamine derivatives and the preparation thereof are disclosed. The diamine derivatives of the present invention can be added to conventional polymerization reactions of tetracarboxylic acids or dianhydrides thereof and diamines to form new polyamic acids. After high-temperature baking, the polyamic acids are cyclized to form polyimides. These polyimides can be used as alignment film materials for liquid crystal display cell and have good alignment property and stability, and are effective in promoting pre-tilt angles.

Abstract: The invention provides a chemical mechanical abrasive composition for use in semiconductor processing, which comprises phosphorous acid and/or a salt thereof as an abrasive enhancer. The chemical mechanical abrasive composition of the invention can be in the form of a slurry which comprises 70-99.5% by weight of an aqueous medium, 0.1-25% by weight of an abrasive, and 0.01-2% by weight of said abrasion enhancer. The chemical mechanical abrasive composition of the invention may further comprise an abrasion co-enhancer selected from an amino acid, a salt thereof, a carboxylic acid, a salt thereof, or a mixture of the acids and/or salts.

Abstract: The invention provides a chemical mechanical abrasive composition for use in semiconductor processing, which comprises phosphorous acid and/or a salt thereof as an abrasive enhancer. The chemical mechanical abrasive composition of the invention can be in the form of a slurry which comprises 70-99.5% by weight of an aqueous medium, 0.1-25% by weight of an abrasive, and 0.01-2% by weight of said abrasion enhancer. The chemical mechanical abrasive composition of the invention may further comprise an abrasion co-enhancer selected from an amino acid, a salt thereof, a carboxylic acid, a salt thereof, or a mixture of the acids and/or salts.

Abstract: The invention provides a chemical-mechanical abrasive composition for use in semiconductor processing, which comprises an aqueous medium, an abrasive, and an abrasion accelerator. The abrasion accelerator mainly functions to enhance the removal rate of the substances to be removed, and selected from the compounds of the following formula, the acid-addition salts thereof, or mixtures of two or more of the foregoing compounds and salts: wherein X and Y are independently lone-pair electrons containing atoms or atomic groups; and R1 and R2 are independently H, alky, amino, aminoalkyl, or alkoxy. The chemical-mechanical abrasive composition of the invention may optionally comprise an acidic component and/or a salt thereof, so as to further enhance the abrasion rate. The invention further provides a method of using the above chemical-mechanical abrasive composition for polishing the surface of a semiconductor wafer.

Abstract: The invention provides a chemical-mechanical abrasive composition for semiconductor processing, which composition is characterized by comprising a water-soluble anionic chemical. According to the invention, said water-soluble anionic chemical would be coated on the surface of a metal film during the polishing of said metal film so as to inhibit the formation of depressions on the resultant metal circuits. In another aspect, the invention provides a chemical-mechanical abrasive composition in the form of a slurry comprising 70-99.5% by weight of an aqueous medium; 0.1-25% by weight of an abrasive particle; 0.01-2.0% by weight of an abrasion enhancer; and 0.01-1% by weight of a water-soluble anionic chemical. The chemical-mechanical abrasive composition of the invention may further comprise an oxidant to enhance the abrasion rate.

Abstract: The invention provides a chemical-mechanical abrasive composition for use in semiconductor processing, which comprises 70-95% by weight of an aqueous medium, 1-25% by weight of an abrasive, 0.1-20% by weight of an abrasion accelerator, wherein the abrasion accelerator comprises monocarboxy group- or an amido group-containing compound and optionally a nitrate salt. The chemical-mechanical abrasive composition of the invention can further comprise an anionic surfactant, e.g. polycarboxylic acid or polyacrylic acid copolymer, so as to reduce the viscosity of the abrasive composition.