Abstract: A chip element according to this invention can reduce the influence of parasitic capacitance and parasitic inductance when used in a GHz band. A substrate is formed of a low permittivity material having a permittivity low enough to reduce parasitic capacitance in a GHz band. Parasitic capacitance inherent to the chip element is reduced.

Abstract: In a screw vacuum pump 30, equal lead screws each in the range of 1 to 4 leads are added on the discharge side of male and female screw rotors (4) and (5) having a continuously changing screw gear helix angle, at a final lead angle of the male and female unequal lead screw rotors on the discharge side that continuously change in helix angle following the advance of the screw gear helix.

Abstract: In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.

Abstract: Abstract A shaft seal structure (17) is provided around an outer circumferential surface of the bearing member (16M, 16FM) located on the cylinder inside of each of the screw rotors (13M, 13FM). The shaft seal structure (17) forms a static pressure seal. A seal gas is introduced between the outer circumferential surfaces of the bearing members (16M, 16FM) and the inner circumferential surfaces (7) of the rotor cylinders of the screw rotors (13M, 13FM) through the bearing members (16M, 16FM).

Abstract: A MIS transistor, formed on a semiconductor substrate, assumed to comprise a semiconductor substrate (702, 910) comprising a projecting part (704, 910B) with at least two different crystal planes on the surface on a principal plane, a gate insulator (708, 920B) for covering at least a part of each of said at least two different crystal planes constituting the surface of the projecting part, a gate electrode (706, 930B), comprised on each of said at least two different crystal planes constituting the surface of the projecting part, which sandwiches the gate insulator with the said at least two different planes, and a single conductivity type diffusion region (710a, 710b, 910c, 910d) formed in the projecting part facing each of said at least two different crystal planes and individually formed on both sides of the gate electrode. Such a configuration allows control over increase in the element area and increase of channel width.

Abstract: During etching of a contact hole, not only the energy of ion irradiation but also the gas composition are altered to change the etching from a high-rate etching to a low-rate etching, thereby reducing the damage. In the low-rate etching where the gas composition is also altered, a firm fluorocarbon film is formed on the bottom of the contact hole, and the etching can be carried out while protecting the silicon surface. Consequently, inactivation of the impurities doped in the silicon surface can be prevented.

Abstract: A cold cathode fluorescent tube where an electron emitting electrode is sealed in shows much deterioration in the luminance with time, thereby being not adequate for a long time use. The electrode emitting electrode is formed in such a shape that an electric field is not locally concentrated. By mixing a material of high heat conductivity, such as tungsten, as the material for the electron emitting electrode or using helium of high heat conductivity as the sealing gas, a long life of the cold cathode fluorescent tube is achieved.

Abstract: A method for producing vegetable oil fuel with low viscosity, including a transesterification step P1 with respect to vegetable oil with triglyceride structure having unsaturated fatty acid, an ozone treatment step P2 with respect to unsaturated fatty acid methyl ester generated in the transesterification step P1, and a reduction step P3 with respect to the ozonide generated in the ozone treatment step P2.

Abstract: A silicon oxide film (1701) serving as a gate insulating film of a semiconductor device contains Kr. Therefore, the stress in the silicon oxide film (1701) and the stress at the interface between silicon and the silicon oxide film are relaxed, and the silicon oxide film has a high quality even though it was formed at a low temperature. The uniformity of thickness of the silicon oxide film (1701) on the silicon of the side wall of a groove (recess) in the element isolating region is 30% or less. Consequently, the silicon oxide film (1701) has its characteristics and reliability superior to those of a silicon thermal oxide film, and the element isolating region can be made small, thereby realizing a high-performance transistor integrated circuit preferably adaptable to an SOI transistor and a TFT.

Abstract: Laser light in a pattern reflected by a two-dimensional array micromirror 106 that is controlled on the basis of mask data of a mask pattern data output device 107 forms an enlarged pattern 110. This enlarged pattern is projected in a reduced manner onto a mask substrate 109 through a reduction-projection optical system 102, thereby forming a lithography pattern 111. Since a large number of patterns are written in an instant by the two-dimensional array micromirror 106, a time required for lithography the entire mask pattern is extremely shortened as compared with a conventional one. As a result, the mask cost can be largely reduced.

Abstract: A visible light-reflecting member is disclosed which uses a plate or a film for reflecting visible lights, whose reflective surface is provided with an aluminum thin film having an aluminum purity of not less than 99 mass % and an X-ray diffraction pattern wherein, among peak intensities ascribed to aluminum, the peak intensity ascribed to the (111) plane is higher than the total of the other peak intensities.

Abstract: A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member.

Abstract: An object of this invention is to provide a vacuum pump having shaft seals that prevent corrosion due to corrosive gas and further ensure smooth operation. A shaft seal structure (17) is provided around an outer circumferential surface of the bearing member (16M, 16FM) located on the cylinder inside of each of the screw rotors (13M, 13FM). The shaft seal structure (17) forms a static pressure seal. A seal gas is introduced between the outer circumferential surfaces of the bearing members (16M, 16FM) and the inner circumferential surfaces (7) of the rotor cylinders of the screw rotors (13M, 13FM) through the bearing members (16M, 16FM).

Abstract: An intermediate layer made of an Si.sub.1-X Ge.sub.X mixed crystal layer is formed on an Si crystal substrate, where the character X denotes a value in the range of 0 to 1. The intermediate layer is connected to the substrate via a heterojunction generating a first heterojunction barrier. An Si crystal layer is formed on the intermediate layer and is connected to the intermediate layer via a heterojunction generating a second heterojunction barrier. The substrate, the intermediate layer, and the Si layer form a laminated structure. The first and second heterojunction barriers form a charge storage well in an energy band of the intermediate layer. Charges in the well are excited by absorbing infrared light. The intermediate layer contains unevenly-distributed impurities whose concentration montonically varies in a direction along a thickness of the laminated structure. The variation in the concentration generates an internal electric field in the energy band of the intermediate layer.

Abstract: An infrared sensor includes a metal and a semiconductor contacted to each other via a rectifying potential barrier. The semiconductor includes a p-type strained Si.sub.1-X Ge.sub.X epitaxial layer grown on a p-type substrate, wherein the character X denotes a Ge atomic fraction and wherein X increases from zero to a predetermined upper limit in a direction away from the Si substrate toward the metal. The metal may be selected from the group of Pt, an alloy of Pt and Si, and an alloy of Pt, Si, and Ge. In addition, the metal may also be selected from the group of Ir, an alloy of Ir and Si, and an alloy of Ir, Si, and Ge.