Patents Assigned to Fujifilm Electronic Materials U.S.A., Inc.
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Publication number: 20240153789Abstract: A container for containing a raw material of a chemical liquid and a method of preparing a container are provided. The container at least includes an inner wall and solvent-treated surface of the inner wall. The method of preparing a container includes treating a surface of the inner wall with water and treating the surface the inner wall with an organic solvent.Type: ApplicationFiled: January 15, 2024Publication date: May 9, 2024Applicant: FUJIFILM Electronic Materials U.S.A., Inc.Inventors: Marcia Cole-Yocom, Bryan Hinzie
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Patent number: 11945894Abstract: This disclosure relates to a dielectric film-forming composition that includes at least one cyclized polydiene resin, and one or both of at least one reactive functional compound and at least one catalyst.Type: GrantFiled: June 21, 2021Date of Patent: April 2, 2024Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Binod B. De, William A. Reinerth, Sanjay Malik, Stephanie Dilocker, Raj Sakamuri
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Patent number: 11939428Abstract: This disclosure relates to a polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (Ia) and a diamine of Structure (Ib), (b) at least one diamine of Structure (II), (c) at least one tetracarboxylic acid dianhydride, and optionally (d) at least one compound containing a first functional group reactive with an amine or an anhydride and at least a second functional group selected from the group consisting of a substituted or unsubstituted alkenyl group and a substituted or unsubstituted alkynyl group. Each variable in the above formulas is defined in the specification.Type: GrantFiled: August 2, 2021Date of Patent: March 26, 2024Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Binod B. De, Sanjay Malik, William A. Reinerth, Ognian N. Dimov, Ahmad A. Naiini, Raj Sakamuri
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Patent number: 11925912Abstract: The disclosure features a system that includes a plurality of material tanks, each of which includes at least one material for forming a chemical composition and includes a first recirculation loop; at least one mixing tank in which the materials from the material tanks are mixed to form a chemical composition, the mixing tank including a second recirculation loop; and at least one holding tank configured to continuously receive the chemical composition from the mixing tank, the holding tank including a third recirculation loop. The system may further include a plurality of fluid flow controller units and be configured to form material and chemical composition flows in an in-process steady state.Type: GrantFiled: December 7, 2018Date of Patent: March 12, 2024Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Shih-Pin Chou, Wen-Hung Chang, Deepak Mahulikar, Tamas Varga, Abhudaya Mishra
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Patent number: 11912921Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.Type: GrantFiled: August 10, 2021Date of Patent: February 27, 2024Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Mick Bjelopavlic, Carl Ballesteros
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Patent number: 11908709Abstract: A container for containing a raw material of a chemical liquid and a method of preparing a container are provided. The container at least includes an inner wall and solvent-treated surface of the inner wall. The method of preparing a container includes treating a surface of the inner wall with water and treating the surface the inner wall with an organic solvent.Type: GrantFiled: January 22, 2020Date of Patent: February 20, 2024Assignee: FUJIFILM Electronic Materials U.S.A., Inc.Inventors: Marcia Cole-Yocom, Bryan Hinzie
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Patent number: 11899364Abstract: This disclosure relates to a dry film structure that includes a carrier substrate, and a polymeric layer supported by the carrier substrate. The polymeric layer includes at least one fully imidized polyimide polymer.Type: GrantFiled: March 18, 2020Date of Patent: February 13, 2024Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Binod B. De, Sanjay Malik, Raj Sakamuri, William A. Reinerth, Ognian N. Dimov, Ahmad A. Naiini
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Patent number: 11898123Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one chelating agent, the chelating agent being a polyaminopolycarboxylic acid; 3) at least one corrosion inhibitor, the corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one sulfonic acid; and 5) water.Type: GrantFiled: August 27, 2021Date of Patent: February 13, 2024Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Emil A. Kneer, Thomas Dory, Atsushi Mizutani
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Publication number: 20240034958Abstract: A composition includes at least one pH adjuster, at least one chelating agent, at least one anionic surfactant, at least one nitrogen containing heterocycle, at least one alkylamine compound, and an aqueous solvent, wherein the composition has a pH of from about 7 to about 14.Type: ApplicationFiled: July 21, 2023Publication date: February 1, 2024Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.Inventors: Yannan Liang, Bin Hu, Shu-Wei Chang
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Patent number: 11884900Abstract: The present disclosure relates to cleaning compositions that are used to clean semiconductor substrates. These cleaning compositions can remove the defects/contaminants arising from previous processing on the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one pH adjusting agent and at least one biosurfactant.Type: GrantFiled: August 25, 2021Date of Patent: January 30, 2024Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Zachary L. Schaefer, Eric Turner, Carl Ballesteros
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Patent number: 11851585Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.Type: GrantFiled: August 4, 2022Date of Patent: December 26, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Ting-Kai Huang, Tawei Lin, Bin Hu, Liqing Wen, Yannan Liang
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Patent number: 11820929Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.Type: GrantFiled: September 3, 2021Date of Patent: November 21, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Mick Bjelopavlic, Carl Ballesteros
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Patent number: 11786841Abstract: The present disclosure is directed to methods and systems of purifying solvents. The purified solvents can be used for cleaning a semiconductor substrate in a multistep semiconductor manufacturing process.Type: GrantFiled: January 15, 2021Date of Patent: October 17, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Pejman Ahmadiannamini, Bryan Hinzie
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Patent number: 11782344Abstract: This disclosure relates to a photosensitive composition that includes at least one fully imidized polyimide polymer having a weight average molecular weight in the range of about 20,000 Daltons to about 70,000 Daltons; at least one solubility switching compound; at least one photoinitiator; and at least one solvent. The composition is capable of forming a film or a dry film having a dissolution rate of greater than about 0.15 micron/second using cyclopentanone as a developer.Type: GrantFiled: July 11, 2018Date of Patent: October 10, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Sanjay Malik, Raj Sakamuri, Ognian N. Dimov, Binod B. De, William A. Reinerth, Ahmad A. Naiini
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Patent number: 11732157Abstract: A polishing composition includes an abrasive; an optional pH adjuster; a barrier film removal rate enhancer; a TEOS removal rate inhibitor; a cobalt removal rate enhancer; an azole-containing corrosion inhibitor; and a cobalt corrosion inhibitor.Type: GrantFiled: October 6, 2020Date of Patent: August 22, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Yannan Liang, Bin Hu, Liqing Wen, Shu-Wei Chang
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Patent number: 11721543Abstract: This disclosure describes a process of generating a planarizing polyimide based dielectric film on a substrate with conducting metal pattern, wherein the process comprised steps of: (a) providing a dielectric film forming composition comprising at least one fully imidized polyimide polymer and at least one solvent; and (b) depositing the dielectric film forming composition onto a substrate with conducting metal pattern to form a dielectric film, wherein the difference in the highest and lowest points on a top surface of the dielectric film is less than about 2 microns.Type: GrantFiled: October 1, 2020Date of Patent: August 8, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Raj Sakamuri, Ognian Dimov, Sanjay Malik, Michaela Connell, Ahmad A. Naiini, Stephanie Dilocker
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Patent number: 11680186Abstract: This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C4 to C40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.Type: GrantFiled: November 6, 2020Date of Patent: June 20, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Eric Turner, Abhudaya Mishra, Carl Ballesteros
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Patent number: 11679375Abstract: The present disclosure is directed to methods and systems of purifying solvents. The purified solvents can be used for cleaning a semiconductor substrate in a multistep semiconductor manufacturing process.Type: GrantFiled: August 27, 2020Date of Patent: June 20, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Stephen Earl Dyer, Brendan Thomas Lane, Patrick Adams Mahoney, Sr.
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Patent number: 11674056Abstract: Polishing compositions that can selectively and preferentially polish certain dielectric films over other dielectric films are provided herein. These polishing compositions include either cationic or anionic abrasives based on the target dielectric film to be removed and preserved. The polishing compositions utilize a novel electrostatic charge based design, where based on the charge of the abrasives and their electrostatic interaction (forces of attraction or repulsion) with the charge on the dielectric film, various material removal rates and polishing selectivities can be achieved.Type: GrantFiled: February 16, 2022Date of Patent: June 13, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventor: Abhudaya Mishra
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Patent number: 11639487Abstract: This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.Type: GrantFiled: November 2, 2022Date of Patent: May 2, 2023Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer