Patents Assigned to Fujifilm Electronic Materials U.S.A., Inc.
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Patent number: 11359169Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.Type: GrantFiled: January 24, 2022Date of Patent: June 14, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
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Publication number: 20220162478Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.Type: ApplicationFiled: February 11, 2022Publication date: May 26, 2022Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
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Patent number: 11286444Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.Type: GrantFiled: August 20, 2020Date of Patent: March 29, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer
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Patent number: 11279850Abstract: The compositions of the present disclosure polish surfaces or substrates that at least partially include ruthenium. The composition includes a synergistic combination of ammonia and oxygenated halogen compound. The composition may further include abrasive and acid(s). A polishing composition for use on ruthenium materials may include ammonia, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; hydrogen periodate, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition; silica, present in an amount of 0.01 wt % to 12 wt %, based on the total weight of the composition; and organic sulfonic add, present in an amount of 0.01 wt % to 10 wt %, based on the total weight of the composition, wherein the pH of the composition is between 6 and 8.Type: GrantFiled: March 12, 2019Date of Patent: March 22, 2022Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
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Patent number: 11279903Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one alkylsulfonic acid or a salt thereof, the alkylsulfonic acid containing an alkyl group substituted by OH or NH2; and 3) at least one aminoalcohol.Type: GrantFiled: July 8, 2020Date of Patent: March 22, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Thomas Dory, Mick Bjelopavlic, Joshua Guske, Kazutaka Takahashi
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Patent number: 11268024Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing cobalt (Co) from a semiconductor substrate without substantially forming cobalt oxide by-products.Type: GrantFiled: April 23, 2020Date of Patent: March 8, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventor: Emil A. Kneer
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Patent number: 11268025Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing one or both of titanium nitride (TiN) and cobalt (Co) from a semiconductor substrate without substantially forming a cobalt oxide hydroxide layer.Type: GrantFiled: June 2, 2020Date of Patent: March 8, 2022Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventor: Emil A. Kneer
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Patent number: 11208616Abstract: This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water, in which the composition is free of a compound comprising at least three hydroxyl groups. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.Type: GrantFiled: April 16, 2020Date of Patent: December 28, 2021Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Atsushi Mizutani, William A. Wojtczak, Yasuo Sugishima, Raj Sakamuri
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Patent number: 11198816Abstract: The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tantalum (Ta) and/or tantalum nitride (TaN) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.Type: GrantFiled: December 8, 2020Date of Patent: December 14, 2021Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventor: Atsushi Mizutani
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Patent number: 11198078Abstract: A chemical liquid manufacturing apparatus, including a first system and a second system, is provided. The first system includes at least one first filtration medium, selected from a first filter, a first ion exchange membrane and a first ion adsorption membrane, wherein the first system is configured to process a material of at least one time. The second system includes at least one second filtration medium, selected from a second filter, a second ion exchange membrane and a second ion adsorption membrane, wherein the second system is configured for recirculation and to process the material of at least two times.Type: GrantFiled: March 29, 2019Date of Patent: December 14, 2021Assignee: FUJIFILM Electronic Materials U.S.A., Inc.Inventors: Bryan Hinzie, Marcia Cole-Yocom, Michael Barker, Perry Westberg, Yuan Chen, Jack Helzer
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Patent number: 11174394Abstract: This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.Type: GrantFiled: December 18, 2018Date of Patent: November 16, 2021Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: William A. Wojtczak, Atsushi Mizutani, Keeyoung Park
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Patent number: 11175582Abstract: This disclosure relates to a photosensitive stacked structure that includes first and second layers, in which the first layer is a photosensitive, dielectric layer and the second layer is a photosensitive layer. The dissolution rate of the first layer in a developer is less than the dissolution rate of the second layer in the developer.Type: GrantFiled: December 20, 2016Date of Patent: November 16, 2021Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Sanjay Malik, Raj Sakamuri, Ognian N. Dimov, Binod B. De, William A. Reinerth, Ahmad A. Naiini
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Patent number: 11124704Abstract: The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.Type: GrantFiled: January 27, 2021Date of Patent: September 21, 2021Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Mick Bjelopavlic, Carl Ballesteros
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Publication number: 20210261822Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.Type: ApplicationFiled: May 12, 2021Publication date: August 26, 2021Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
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Patent number: 11061327Abstract: A polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (Ia) and a diamine of Structure (Ib), (b) at least one diamine of Structure (II), (c) at least one tetracarboxylic acid dianhydride, and optionally (d) at least one compound containing a first functional group reactive with an amine or an anhydride and at least one second functional group selected from the group consisting of a substituted or unsubstituted alkenyl group and a substituted or unsubstituted alkynyl group. Each variable in the above formulas is defined in the specification.Type: GrantFiled: October 25, 2017Date of Patent: July 13, 2021Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: William A. Reinerth, Binod B. De, Sanjay Malik, Raj Sakamuri, Ognian N. Dimov, Ahmad A. Naiini
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Patent number: 11034861Abstract: Polishing compositions that can selectively and preferentially polish certain dielectric films over other dielectric films are provided herein. These polishing compositions include either cationic or anionic abrasives based on the target dielectric film to be removed and preserved. The polishing compositions utilize a novel electrostatic charge based design, where based on the charge of the abrasives and their electrostatic interaction (forces of attraction or repulsion) with the charge on the dielectric film, various material removal rates and polishing selectivities can be achieved.Type: GrantFiled: August 8, 2019Date of Patent: June 15, 2021Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventor: Abhudaya Mishra
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Patent number: 11034859Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.Type: GrantFiled: March 11, 2019Date of Patent: June 15, 2021Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.Inventors: David (Tawei) Lin, Bin Hu, Liqing (Richard) Wen, Yannan Liang, Ting-Kai Huang
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Patent number: 10961453Abstract: The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tungsten (W) and/or titanium nitride (TiN) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.Type: GrantFiled: August 15, 2019Date of Patent: March 30, 2021Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Tomonori Takahashi, Frank Gonzalez
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Patent number: 10947484Abstract: This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.Type: GrantFiled: April 9, 2019Date of Patent: March 16, 2021Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Atsushi Mizutani, William A. Wojtczak, Yasuo Sugishima
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Patent number: 10927329Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.Type: GrantFiled: March 22, 2019Date of Patent: February 23, 2021Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Tomonori Takahashi, Bing Du, William A. Wojtczak, Thomas Dory, Emil A. Kneer