Abstract: A method of manufacturing printed circuit boards includes some or all of: chemically or electrically applying metallic layers to a substrate; incorporating bores into the substrate; through-contacting the bores incorporated into the substrate; applying a layer from a photoresist to an electrically conducting layer in a masking step; exposing the photoresist while using an exposure mask in an exposing step; removing exposed or unexposed regions of the layer from the photoresist while in regions laying bare the electrically conducting layer in a developing step; removing the laid-bare regions of the electrically conducting layer in an etching step; cleaning the substrate in a rinsing step; and drying the substrate, wherein the substrate for carrying out the developing step and/or the etching step is set in rotation and a developer solution and/or an etching liquid is applied to the rotating substrate by at least one nozzle.

Abstract: A method of manufacturing printed circuit boards includes some or all of: chemically or electrically applying metallic layers to a substrate; incorporating bores into the substrate; through-contacting the bores incorporated into the substrate; applying a layer from a photoresist to an electrically conducting layer in a masking step; exposing the photoresist while using an exposure mask in an exposing step; removing exposed or unexposed regions of the layer from the photoresist while in regions laying bare the electrically conducting layer in a developing step; removing the laid-bare regions of the electrically conducting layer in an etching step; cleaning the substrate in a rinsing step; and drying the substrate, wherein the substrate for carrying out the developing step and/or the etching step is set in rotation and a developer solution and/or an etching liquid is applied to the rotating substrate by at least one nozzle.

Abstract: A method of manufacturing printed circuit boards includes some or all of: chemically or electrically applying metallic layers to a substrate; incorporating bores into the substrate; through-contacting the bores incorporated into the substrate; applying a layer from a photoresist to an electrically conducting layer in a masking step; exposing the photoresist while using an exposure mask in an exposing step; removing exposed or unexposed regions of the layer from the photoresist while in regions laying bare the electrically conducting layer in a developing step; removing the laid-bare regions of the electrically conducting layer in an etching step; cleaning the substrate in a rinsing step; and drying the substrate, wherein the substrate for carrying out the developing step and/or the etching step is set in rotation and a developer solution and/or an etching liquid is applied to the rotating substrate by at least one nozzle.

Abstract: In an apparatus for producing thin layers on substrates for solar cell production, wherein the thin layers are applied by an APCVD process at temperatures of more than 250° C., the substrates are conveyed on a horizontal conveyor path and coated by means of an APCVD coating in continuous operation. The conveyor path has conveyor rollers, which consist of a temperature-resistant, non-metallic material, preferably of ceramic. A heating device and/or a purge gas feeding device is/are arranged on that side of the conveyor path which is remote from the coating apparatus.

Abstract: In a method for the treatment of a substrate surface of a flat substrate with a process medium at the substrate underside, the process medium has a removing or etching effect on the substrate surface. The substrates are wetted with the process medium from below in a manner lying horizontally. The upwardly facing substrate top side is wetted or covered with water or a corresponding protective liquid over a large area or over the whole area as protection against the process medium acting on the substrate top side.

Abstract: A method and device for treating silicon wafers. In a first step, the silicon wafers (22) are conveyed flat along a continuous, horizontal conveyor belt (12, 32) and nozzles (20) or the like spray an etching solution (21) from the top onto the wafers to texture them, only little etching solution (21) being applied to the silicon wafers (22) from below. In a second step, the silicon wafers (22), which are aligned as in the first step, are wetted exclusively from below with the etching solution (35) to etch-polish them.

Abstract: A retaining device for printed circuit boards is of a frame-like form, with transporting carriages arranged on the outer longitudinal sides and intended for transporting the retaining device, a retaining frame of the retaining device for the substrates being arranged between the transporting carriages. The retaining frame is mounted height-adjustably on the transporting carriages and so a substrate restrained in it can be lowered or raised during the treatment.

Abstract: In the case of a device and a method for cleaning substrates on a carrier, to the underside of which the substrates are fastened so as to be parallel to and slightly apart from one another, the carrier has in its interior a plurality of longitudinal channels, which run parallel to one another. As a result of the sawing of the wafers, they merge, via openings, into interstices between the substrates. As a result of a relative movement, an elongate tube, from which cleaning fluid is let out, is introduced into one of the longitudinal channels, the relative movement being achieved substantially through moving of the carrier.

Abstract: A carrier (13) for a silicon block (31) is designed to be firmly connected as part of a carrier arrangement (11), together with a lower carrier part (25), to the silicon block (31), and to be moved together therewith for machining by sawing, cleaning or the like. The underside of the carrier (13), which points towards the silicon block (31), has a plurality of channels (29), as does the lower carrier part (25) bonded thereto, the channels (29) in each case lying one above another. Water is introduced into the channels (29) in the carrier (13) from above and can run through sawing slots in the lower carrier part (25) between the wafers of the sawn-up silicon block (31) for cleaning purposes.

Abstract: A method for the selective doping of silicon of a silicon substrate (1) for producing a pn-junction in the silicon is characterized by the following steps: a) Providing the surface of the silicon substrate (1) with a doping agent (2) based on phosphorous, b) heating the silicon substrate (1) for creating a phosphorous silicate glass (2) on the surface of the silicon, wherein phosphorous diffuses into the silicon as a first doping (3), c) applying a mask (4) on the phosphorous silicate glass (2), covering the regions (5) that are later highly doped, d) removing the phosphorous silicate glass (2) in the non-masked regions, e) removing the mask (4) from the phosphorous silicate glass (2), f) again heating for the further diffusion of phosphorous from the phosphorous silicate glass (2) into the silicon as a second doping for creating the highly doped regions (5), g); complete removal of the phosphorous silicate glass (2) from the silicon.

Abstract: An apparatus for cleaning substrates on a carrier, which has in the interior thereof a plurality of longitudinal passages, which run parallel to one another and are connected to the outside at the underside of the carrier via openings. There is provided a plurality of elongated pipes, which are arranged on a pipe holder and are connected in a fluid-conducting manner to a fluid supply. A centering template is provided, which encompasses the pipes and is displaceable in the longitudinal direction thereof between an attachment position in the end region of the pipes away from the pipe holder and a working position, which lies between the attachment position and the pipe holder. The centering template bears against the carrier, such that the pipes are then aligned exactly with the longitudinal passages.

Abstract: In a method for the treatment of silicon wafers in the production of solar cells, a treatment liquid is applied to the surface of the silicon wafers for the purpose of texturization thereof. The treatment liquid contains, as additive, ethyl hexanol or cyclohexanol in an amount ranging from 0.5% to 3%, by weight.

Abstract: In a method for the production of a solar cell, a flat aluminium layer is applied to the back of a solar cell substrate. The aluminium is alloyed into the silicon substrate by the effect of the temperature and forms an aluminium BSF. The remaining aluminium that has not been alloyed into the silicon is subsequently removed. The aluminium BSF is transparent to light.

Abstract: In a method for processing monocrystalline silicon wafers, which are transported while lying flat along a horizontal transport path, etching solution for texturing the surface is applied from above by means of nozzles or the like. The etching solution is applied from above several times in succession onto the upper side of the silicon substrates, remains there and reacts with the silicon substrate.

Abstract: A retaining device for printed circuit boards is of a frame-like form, with transporting carriages arranged on the outer longitudinal sides and intended for transporting the retaining device, a retaining frame of the retaining device for the substrates being arranged between the transporting carriages. The retaining frame is mounted height-adjustably on the transporting carriages and so a substrate restrained in it can be lowered or raised during the treatment.

Abstract: In order to transport printed circuit boards (30) through a processing system (12), printed circuit boards (30) lying one behind another can be connected by means of holding clips (22) to form a type of chain. The outer ends of the holding clips (22) are suspended on two spaced-apart transport chains (16) which provide for transport and mounting. The holding clips are formed in two parts with a lower holding part (22) and an upper holding part (40), between which a printed circuit board (30) is mounted.

Abstract: In a method for producing a front-side emitter electrode as front contact for a silicon solar cell on a silicon wafer, a depression is produced in the front side of said silicon wafer. A front-side n-doped silicon layer and an antireflection layer are then produced. A paste is then introduced into the depression, said paste containing electrically conductive metal particles and etching glass frit. Said paste, as a result of momentary heating, etches through the antireflection layer to the n-doped silicon layer making electrical contact with the latter. Afterwards, electrically conductive front contact metal is galvanically attached as front contact onto the heat-treated paste in the depression.

Abstract: An apparatus for cleaning substrates on a carrier, which has in the interior thereof a plurality of longitudinal passages, which run parallel to one another and are connected to the outside at the underside of the carrier via openings. There is provided a plurality of elongated pipes, which are arranged on a pipe holder and are connected in a fluid-conducting manner to a fluid supply. A centring template is provided, which encompasses the pipes and is displaceable in the longitudinal direction thereof between an attachment position in the end region of the pipes away from the pipe holder and a working position, which lies between the attachment position and the pipe holder. The centring template bears against the carrier, such that the pipes are then aligned exactly with the longitudinal passages.

Abstract: In the case of a device and a method for cleaning substrates on a carrier, to the underside of which the substrates are fastened so as to be parallel to and slightly apart from one another, the carrier has in its interior a plurality of longitudinal channels, which run parallel to one another. As a result of the sawing of the wafers, they merge, via openings, into interstices between the substrates. As a result of a relative movement, an elongate tube, from which cleaning fluid is let out, is introduced into one of the longitudinal channels, the relative movement being achieved substantially through moving of the carrier.

Abstract: In the case of a method and an apparatus for treating substrates, resist layers are removed from the substrates by spraying with process solution. The substrates are sprayed with the process solution first in a main stripping module and then in a post-stripping module and the said process solution collects in containers under the modules. At least one container is respectively provided for each module. The process solution is collected in the main stripping module in two containers and first fed directly into a second container, which is largely separated from the first container by a wall, which is liquid-permeable in a region significantly below the surface level of the process solution. Process solution is taken from the first container without froth and returned once again into the cycle of the process for wetting the substrates.