Patents Assigned to GLO AB
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Publication number: 20140239327Abstract: The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.Type: ApplicationFiled: January 30, 2014Publication date: August 28, 2014Applicant: GLO ABInventors: Steven Konsek, Jonas Ohlsson, Yourii Martynov, Peter Hanberg
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Publication number: 20140141555Abstract: A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices.Type: ApplicationFiled: January 28, 2014Publication date: May 22, 2014Applicant: GLO ABInventor: Truls Lowgren
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Publication number: 20140138620Abstract: A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls during or after creation of the nanowires.Type: ApplicationFiled: October 22, 2013Publication date: May 22, 2014Applicant: Glo ABInventors: Carl Patrik Theodor Svensson, Nathan Gardner
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Publication number: 20140117307Abstract: A method for treating a LED structure with a substance, the LED structure includes an array of nanowires on a planar support. The method includes producing the substance at a source and causing it to move to the array along a line. The angle between the line followed by the substance and the plane of the support is less than 90° when measured from the center of the support. The substance is capable of rendering a portion of the nanowires nonconductive or less conductive compared to before being treated by the substance.Type: ApplicationFiled: October 22, 2013Publication date: May 1, 2014Applicant: Glo ABInventors: Scott Brad Herner, Daniel Bryce Thompson, Cynthia Lemay
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Publication number: 20140117401Abstract: A method for ablating a first area of a light emitting diode (LED) device which includes an array of nanowires on a support with a laser is provided. The laser ablation exposes a conductive layer of the support that is electrically connected to a first conductivity type semiconductor nanowire core in the nanowires, to form a first electrode for the LED device. In embodiments, the nanowires are aligned at least 20 degrees from the plane of the support. A light emitting diode (LED) structure includes a first electrode for contacting a first conductivity type nanowire core, and a second electrode for contacting a second conductivity type shell enclosing the nanowire core, where the first electrode and/or at least a portion of the second electrode are flat.Type: ApplicationFiled: October 22, 2013Publication date: May 1, 2014Applicant: Glo ABInventor: Scott Brad Herner
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Publication number: 20140077220Abstract: Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanopyramids are grown utilizing a CVD based selective area growth technique. The nanopyramids are grown directly or as core-shell structures.Type: ApplicationFiled: September 18, 2013Publication date: March 20, 2014Applicant: Glo ABInventors: Olga KRYLIOUK, Nathan Gardner, Giuliano Portilho Vescovi
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Patent number: 8669574Abstract: The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.Type: GrantFiled: July 7, 2009Date of Patent: March 11, 2014Assignee: GLO ABInventors: Steven Konsek, Jonas Ohlsson, Yourii Martynov, Peter Hanberg
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Patent number: 8669125Abstract: A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices.Type: GrantFiled: June 17, 2011Date of Patent: March 11, 2014Assignee: GLO ABInventor: Truls Löwgren
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Patent number: 8664636Abstract: A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n-junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction.Type: GrantFiled: December 21, 2009Date of Patent: March 4, 2014Assignee: GLO ABInventors: Steven Louis Konsek, Yourii Martynov, Jonas Ohlsson, Peter Jesper Hanberg
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Publication number: 20130221322Abstract: The present invention provides a substrate (1) with a bulk layer (3) and a buffer layer (4) having a thickness of less than 2 ?m arranged on the bulk layer (3) for growth of a multitude of nanowires (2) oriented in the same direction on a surface (5) of the buffer layer (4). A nanowire structure, a nanowire light emitting diode comprising the substrate (1) and a production method for fabricating the nanowire structure is also provided. The production method utilizes non-epitaxial methods for forming the buffer layer (4).Type: ApplicationFiled: June 27, 2011Publication date: August 29, 2013Applicant: GLO ABInventor: Jonas Ohlsson
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Publication number: 20130092899Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.Type: ApplicationFiled: December 5, 2012Publication date: April 18, 2013Applicant: GLO ABInventor: GLO AB
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Publication number: 20130092900Abstract: An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a minor provided on a second conductivity type semiconductor side of the structure.Type: ApplicationFiled: December 6, 2012Publication date: April 18, 2013Applicant: GLO ABInventor: Glo AB
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Publication number: 20130075693Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer.Type: ApplicationFiled: September 25, 2012Publication date: March 28, 2013Applicant: GLO ABInventor: Glo AB
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Patent number: 8350249Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.Type: GrantFiled: September 26, 2011Date of Patent: January 8, 2013Assignee: GLO ABInventor: Patrik Svensson
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Patent number: 8350251Abstract: An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a mirror provided on a second conductivity type semiconductor side of the structure.Type: GrantFiled: October 3, 2011Date of Patent: January 8, 2013Assignee: GLO ABInventors: Truls Lowgren, Ghulam Hasnain
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Publication number: 20110309382Abstract: A light emitting diode (LED) structure includes a plurality of devices arranged side by side on a support layer. Each device includes a first conductivity type semiconductor nanowire core and an enclosing second conductivity type semiconductor shell for forming a pn or pin junction that in operation provides an active region for light generation. A first electrode layer extends over the plurality of devices and is in electrical contact with at least a top portion of the devices to connect to the shell. The first electrode layer is at least partly air-bridged between the devices.Type: ApplicationFiled: June 17, 2011Publication date: December 22, 2011Applicant: GLO ABInventor: Truls LÔWGREN
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Publication number: 20110254034Abstract: The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.Type: ApplicationFiled: July 7, 2009Publication date: October 20, 2011Applicant: Glo ABInventors: Steven Konsek, Jonas Ohlsson, Yourii Martynov, Peter Hanberg
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Publication number: 20110240959Abstract: A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n-junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction.Type: ApplicationFiled: December 21, 2009Publication date: October 6, 2011Applicant: GLO ABInventors: Steven Louis Konsek, Yourii Martynov, Jonas Ohisson, Peter Jesper Hanberg