Abstract: A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material.

Abstract: A magnetic recording medium for heat-assisted magnetic recording includes a magnetic data storage layer having magnetic grains separated by grain boundary phases. The grain boundary phases have a higher thermal conductivity than a thermal conductivity of the magnetic grains. The magnetic recording medium further includes a heat sink layer and one or more intermediate layers disposed between the magnetic data storage layer and the heat sink layer. Each of the one or more intermediate layers has crystalline phase grains separated by grain boundary phases. The grain boundary phases have a higher thermal conductivity than a thermal conductivity of the crystalline phase grains. The grain boundary phases in both the magnetic data storage layer and the intermediate layers provide high thermal conductivity conduits for dissipating heat from the magnetic data storage layer to the heatsink layer.

Abstract: A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material.

Abstract: A method of fabricating a sputter target comprises: homogenously blending a plurality of powders including at least a first powder and a second powder. The first powder is comprised of chromium (Cr), cobalt (Co), ruthenium (Ru), nickel (Ni), or iron (Fe). The second powder is comprised of boron (B), carbon (C), a nitrogen (N)-containing material, a boride, a carbide, a nitride, a silicide, an oxygen (O)-containing material or an oxide. The second powder has a particle size of between 0.01 microns and 50 microns. The method further comprises: canning the blended plurality of powders to form a substantially non-segregated encapsulated powdered material mix; pressing the encapsulated powdered material mix to form a billet; and machining the billet to form a sputter target.

Abstract: A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material.

Abstract: A magnetic recording medium that includes a substrate, an underlayer deposited above the substrate, the underlayer comprised of a magnetically soft alloy containing at least one soft ferromagnetic element and at least one corrosion inhibitor element that is selected from the group consisting of chromium (Cr), tungsten (W), molybdenum (Mo), carbon (C), copper (Cu), nickel (Ni), manganese (Mn), nitrogen (N), titanium (Ti), niobium (Nb), silicon (Si), tantalum (Ta), and aluminum (Al), and a magnetic data recording layer deposited above the underlayer. A sputter target comprised of the magnetically soft alloy is also provided, and the magnetically soft alloy is also used in soft magnetic layers on magnetic recording heads.

Abstract: A sputter target includes a metal alloy having a target surface, a rear surface and a thickness between the target and rear surfaces. The target surface and rear surface are outer surfaces of the metal alloy. The metal alloy has a thickness direction substantially along the thickness. The target surface is substantially normal to the thickness direction. The metal alloy has a single substantially homogenous microstructural zone across substantially the entire thickness. The metal alloy further includes dendrites. The dendrites at the target surface are oriented along substantially one direction, and the dendrites at a center plane of the metal alloy are oriented along substantially the same one direction. A sputter target may include a metal alloy which is a cobalt (Co) based, and may have a [0001] hexagonal close-packing (HCP) direction oriented substantially normal to the target surface.

Abstract: A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.

Abstract: A plasma spray device is provided. The plasma spray device includes a plasma chamber region for having a plasma formed and a throat region coupled to the plasma chamber region. The throat region has an end surface and an axial bore. The axial bore is formed substantially along a longitudinal axis of the throat region, and has a non-circular cross-sectional shape. The axial bore at the end surface is for ejecting a plasma stream. The axial bore may include a plurality of grooves formed substantially along the longitudinal axis of the throat region. The cross-sectional shape of the axial bore may alternatively be defined by a plurality of overlapping substantially circular lobes. The plasma stream has a flow that is lineated before the plasma stream is ejected from the axial bore. The plasma stream has an overall particle pattern angle of less than about 50° after the plasma stream exits the axial bore.

Abstract: A seedlayer for a magnetic recording medium, the seedlayer formed over a substrate from a sputter target comprised of tantalum (Ta) and an alloying element. The solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, and the alloying element has a mass susceptibility of less than or equal to 1.5 × 10 - 7 ? m 3 kg , where possible alloying elements include (but are not limited to) boron (B), carbon (C), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), manganese (Mn), chromium (Cr), zirconium (Zr), niobium (Nb), molybdenum (Mo), ytterbium (Yb), lutetium (Lu), hafnium (Hf), bismuth (Bi), and tungsten (W). Alternatively, the alloying element is soluble in tantalum (Ta) at room temperature or at elevated temperatures, has a mass susceptibility of less than or equal to 1.5 × 10 - 7 ? m 3 kg , and has an atomic radius smaller than 1.

Abstract: Spent sputtering targets are refurbished by filling the depleted region of the target with new sputter material using a hot isostatic pressing or HIP'ing technique.

Abstract: A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material.

Abstract: An enhanced sputtering target is provided for use in a magnetron sputtering system. The sputtering target includes an active surface from which target material is sputtered and a back surface opposite the active surface. At least one magnet is embedded in the back surface of the target and is oriented to increase the magnetic field passing through the active surface of the target.

Abstract: A method of manufacturing a magnetic recording medium, including the step of reactively or non-reactively sputtering at least a first data storing thin film layer over a substrate from a sputter target. The sputter target is comprised of cobalt (Co), platinum (Pt), a first metal oxide further comprised of a first metal and oxygen (O) and, when non-reactively sputtering, a second metal oxide. The first data storing thin film layer is comprised of cobalt (Co), platinum (Pt), and a stoichiometric third metal oxide comprising the first metal and oxygen (O). During sputtering, any non-stoichiometry of the third metal oxide in the first data storing thin film layer is compensated for using oxygen (O) from the second metal oxide in the sputter target, or using oxygen (O) from the oxygen-rich gas atmosphere.

Abstract: A method for manufacturing a single-element matrix cobalt-based granular media alloy composition formulated as Cof1-(MuOv)f2, M representing a base metal selected from the group consisting of magnesium (Mg), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), nickel (Ni), copper (Cu), zinc (Zn), aluminum (Al), silicon (Si), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), indium (In), lanthanum (La), hafnium (Hf), tantalum (Ta), and tungsten (W), u and v representing the number of atoms of base metal M and oxygen (O) per oxide formula, respectively, and f1 and f2 being mole fractions represented by the equation f1+(u+v)f2=1. The method includes the steps of blending a Co-M master alloy powder and a Cou?Ov? powder into a corresponding (CoaM1?a)f1?-(Cou?Ov?)f2? formula, and densifying the blended powders.

Abstract: The invention provides a sputter target material. The sputter target material comprises an alloy system comprising Cr—C, Cr—M—C or Cr—M1—M2—C, wherein C comprises at least 0.5 and as much as 20 atomic percent; M comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W; M1 comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W, and M2 comprises at least 0.5 and as much as 10 atomic percent and is an element selected from the group consisting of Li, Mg, Al, Sc, Mn, Y, and Te. A magnetic recording medium comprising a substrate and at least an underlayer comprising the sputter target material of the invention also is provided. A method of manufacturing a sputter target material further provided.

Abstract: Alloy compositions include Mn alloys that combine Mn with one element selected from Ga, In, Ni and Zn. Also included are Fe alloys and Co alloys in which Fe or Co are combined with either Pt or Pd. The alloy compositions form ordered compounds having L10 or L12 type crystalline structures within specified compositional ranges. In addition, the alloy compositions have low levels of impurities, such as oxygen and sulfur, which provide better performance in magnetic memory applications. The alloy compositions preferably are formed into sputtering targets used for thin film applications.

Abstract: A sputter target, where the sputter target is comprised of cobalt (Co), greater than 0 and as much as 24 atomic percent chromium (Cr), greater than 0 and as much as 20 atomic percent platinum (Pt), greater than 0 and as much as 20 atomic percent boron (B), and greater than 0 and as much as 10 atomic percent gold (Au). The sputter target is further comprised of X1, where X1 is selected from the group consisting of tungsten (W), yttrium (Y), manganese (Mn), and molybdenum (Mo). The sputter target is further comprised of 0 to 7 atomic percent X2, wherein X2 is an element selected from the group consisting of titanium (Ti), vanadium (V), zirconium (Zr), niobium (Nb), ruthenium (Ru), rhodium (Rh), palladium (Pd), hafnium (Hf), tantalum (Ta), and iridium (Ir).

Abstract: A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.

Abstract: The present invention relates to a method of manufacturing sputtering targets doped with non-metal components including boron, carbon, nitrogen, oxygen and silicon. A powder process is utilized whereby alloyed powders, which contain non-metal elements of B/C/N/O/Si and non-metal containing phases of less than ten microns in microstructure, are blended, canned and subjected to hot isostatic press consolidation. The sputtering targets of the present invention avoid spitting problems during sputtering of the target material on a substrate.