Abstract: A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.

Abstract: The present invention relates to a method of manufacturing sputtering targets doped with non-metal components including boron, carbon, nitrogen, oxygen and silicon. A powder process is utilized whereby alloyed powders, which contain non-metal elements of B/C/N/O/Si and non-metal containing phases of less than ten microns in microstructure, are blended, canned and subjected to hot isostatic press consolidation. The sputtering targets of the present invention avoid spitting problems during sputtering of the target material on a substrate.

Abstract: An ingot of material which is normally too brittle to allow successful rolling and wrought processing is formed so as to have a thickness-to-width ratio of less than about 0.5 and is annealed in a temperature range of 1000° F. to 2500° F. for a preselected time. The ingot is then rolled in a temperature range of 1500° F. to 2500° F. Additional/optional annealing of the resulting rolled plate in a temperature range of 500° F. to 2000° F., or between room temperature and 1500° F., and/or a final annealing between 500° F. and 1500° F., is possible. Sputtering targets are cut out of the rolled plate and used for the manufacture of storage disks.

Abstract: An ingot of material which is normally too brittle to allow successful rolling and wrought processing is formed so as to have a thickness-to-width ratio of less than about 0.5 and is annealed in a temperature range of 1000° F. to 2500° F. for a preselected time. The ingot is then rolled in a temperature range of 1500° F. to 2500° F. Additional/optional annealing of the resulting rolled plate in a temperature range of 500° F. to 2000° F., or between room temperature and 1500° F., and/or a final annealing between 500° F. and 1500° F., is possible. Sputtering targets are cut out of the rolled plate and used for the manufacture of storage disks.

Abstract: Magnetic materials for use in sputtering targets are hot rolled and stretched at ambient temperature or at a temperature not exceeding 1400° F. The magnetic material can be pure Co, pure Ni, or Co based alloys.

Abstract: A method for making a magnetic data storage target includes warm-rolling a magnetic alloy sheet at a temperature of less than about 1200° F., optimally followed by annealing. The method results in increased pass-through-flux (PTF) and improved performance in magnetron sputtering applications.

Abstract: Cobalt-based Ta-containing magnetic target alloy materials are produced in which homogeneity of the magnetic material is improved by eliminating Ta-rich second phases in the microstructure by a process comprising soaking ingots of said alloy from which targets are to be produced at temperatures ranging from 1600° to 2600° F. for periods of 10 minutes to 24 hours prior to hot-rolling, preferably using multiple steps, then hot-rolling at similar temperatures utilizing at least a 3% reduction for pass, and optionally soaking the rolled plates from said rolling step at temperatures ranging from 2000° to 2600° F. for periods of 10 minutes to 24 hours.

Abstract: A method for making a magnetic data storage target includes warm-rolling a magnetic alloy sheet at a temperature of less than about 1200.degree. F., optimally followed by annealing. The method results in increased pass-through-flux (PTF) and improved performance in magnetron sputtering applications.

Abstract: An overglaze ink comprising(a) 55 to 70 weight % of a glass composition, the glass composition comprising(1) 15 to 43 weight % of a main glass component selected from the group consisting of BaO, SrO and SrO+BaO,(2) a glass forming component comprising34 to 45 weight % B.sub.2 O.sub.3 and0 to 6 weight % SiO.sub.2(3) 0 to 2 weight % of a colorant selected from the group consisting of Cr.sub.2 O.sub.3, CoO and NiO,(4) 7 to 20 weight % of a thermal expansion modifier selected from the group consisting of ZnO, Al.sub.2 O.sub.3, TiO.sub.2 and mixtures thereof, and(5) 1 to 7 weight % of a dopant comprising one or more of the following:ZnF.sub.2 having a weight % of 0 to 5,Li.sub.2 O having a weight % of 0 to 2,Na.sub.2 O having a weight % of 0 to 2,K.sub.2 O having a weight % of 0 to 2,LiF having a weight % of 0 to 2,NaF having a weight % of 0 to 2,KF having a weight % of 0 to 2,BaF.sub.2 having a weight % of 0 to 2,Na.sub.2 SiF.sub.6 having a weight % of 0 to 2,PbO having a weight % of 0 to 3,V.sub.2 O.sub.

Abstract: A multi-stage valve having a valve housing containing an inlet port and an outlet port that communicate through means of an elongated chamber formed in the housing. An outer sealing unit is mounted in the chamber and is adapted to close in sealing contact against one of the ports. A control orifice is passed through the first sealing unit to restrict the flow through the port when the unit is sealed thereagainst. A second inner sealing unit is mounted in the chamber behind the outer unit and is arranged to close thereagainst to seal the orifice. The two units are coupled by a lost motion mechanism which permits the sealing units to close in sequence between a fully closed position, an intermediate position wherein the flow through the valve is restricted by the orifice and a fully opened position wherein the flow through the valve is unrestricted.

Abstract: Method and apparatus for monitoring the deposition of a material or materials upon a substrate using atomic absorption techniques. Radiant energy is directed through a flow of evaporant during a deposition process. The radiation contains spectral emission lines absorbable by the evaporant as well as emission lines not absorbable by the evaporant. Changes in the transmission of one or more non-absorbable lines are used to compensate for changes in the absorption of absorbable lines of interest that are caused by misalignment or displacement of the optical elements during the deposition process.

Abstract: An RF control system suitable for use in a mass spectrometer of the type having an ionization chamber, a mass filter and an ion detector. A constant frequency RF voltage is applied to the filter. The magnitude of the RF signal is varied in response to a DC control signal to permit selected ions having a desired charge-to-mass ratio to pass through the filter and strike the detector. In the control system the generated RF signal is attenuated and added to the DC control signal. The resultant voltage is applied to a comparator-integrator circuit that is arranged to provide a control signal capable of precisely holding the output of the RF generator at a predetermined peak voltage.

Abstract: A method of manufacturing a solid state sensor wherein a reactive compound of an alkali metal is tightly packed between a central electrode and a surrounding ion shield. A heating coil is wound about the outside of the shield. The ion shield is formed of a material that is deplete in ions of alkali metal and serves as a ion depletion boundry in the system.

Abstract: Method and apparatus for selectively sensing the presence of a given constituent within an atmosphere. The apparatus includes a solid state element containing alkali metal ions that react with ions of the given constituent when the two are brought together. The solid state element is housed within a shield that functions as an ion control screen when heated to a predetermined temperature in the presence of a gas or vapor of the given constituent to selectively pass ions of the given constituent into reactive contact with the solid state element housed therein. Circuit means are further provided for detecting a flow of ions through the shield and for producing a discernible signal in response thereto.

Abstract: A leak standard generator which utilizes the diffusion properties of a gas or vapor to deliver a uniform rate of flow of a leak sample into a diluent gas stream. The generator includes a reservoir containing the leak sample, a discharge head through which is passed a metered flow of diluent gas and a diffusion tube of prescribed dimensions for carrying a gas or vapor of the sample from the reservoir into the diluent gas stream moving through the discharge head. Heating means are provided to maintain the reservoir and the diffusion tube at different temperature levels to promote uniform movement of the sample gas or vapor into the diluent stream.

Abstract: Apparatus is disclosed for utilizing a low energy electron beam to permit monitoring the rate of deposition and composition of the evaporant particles in a vacuum deposition system. This is accomplished by passing a sample of the evaporant employed in the vacuum deposition process through an enclosure defining a flow path for the evaporant sample which crosses the path of a relatively low energy electron beam which is sufficient to excite the electrons of the atoms constituting the vaporized particles in the deposition chamber. The outer-shell electrons of the atoms constituting the evaporant, after excitation, drop back to a lower energy state in the course of which photons are released which are characteristic of given materials. The enclosure is formed with an optical opening receiving the photons in a path orthogonal with respect to the excitation beam and evaporant sample path, and a photodetector is optically coupled to the opening for sensing the emitted photons.