Abstract: A hole-based ultra-deep photodiode in a CMOS image sensor and an associated process are disclosed. A p-type substrate is grounded or connected to a negative power supply. An n-type epitaxial layer is grown on the p-type substrate, and is connected to a positive power supply. An ultra-deep p-type photodiode implant region is formed in the n-type epitaxial layer. Thermal steps are added to insure a smooth and deep doping profile.

Abstract: A color interpolation system is disclosed. An enhancement unit receives raw signals from an image sensor, and then processes the raw signals to output an enhanced first signal. A first interpolation unit receives and processes a raw first signal and accordingly outputs an interpolated first signal. A gain generator generates an enhancement gain according to the enhanced first signal and the interpolated first signal.

Abstract: A ramp generator includes a digital-to-analog converter (DAC), a sampling capacitor, an integrator circuit, a polarity reversing switch selectively coupling first and second outputs of the DAC to a first side of the sampling capacitor, a first switch coupling a second side of the sampling capacitor to a reference voltage source, and a second switch coupling the second side of the sampling capacitor to an input of the integrator circuit.

Abstract: Black level calibration methods and systems are generally disclosed. According to one embodiment of the present invention, a method of calibrating a black level signal in a frame includes performing an iteration of averaging a first set of digital values corresponding to a first set of adjusted black level signals associated with a first set of black pixels of the frame, determining whether an average value based on the first set of digital values has reached a target black level, determining a calibration offset based on a difference between the average value and the target black level and an accumulator step, converting the calibration offset to an analog signal, generating a calibration signal based on the analog signal for a second set of black pixels of the frame, and repeating the iteration for the frame until a predetermined condition is determined to have been met.

Abstract: In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to construct a semiconductor structure having an etch-stop layer above a photodiode region and a first dielectric layer above the etch-stop layer. The process may be configured to etch a LP funnel through the first dielectric layer. And the process may be further configured to stop the etching of the LP funnel upon reaching and removing of the etch-stop layer.

Abstract: A method for forming an image sensing device is disclosed. An epitaxy layer having the first conductivity type is formed on a substrate, wherein the epitaxy layer comprises a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light. A first deep well is formed in a lower portion of the epitaxy layer for reducing pixel-to-pixel talk of the image sensing device. A second deep well is formed in a lower portion of the epitaxy layer.

Abstract: A method for fabricating a back-side illumination image sensor includes: implanting a first type of dopant into an epitaxial layer disposed over a first side of a substrate layer to form a first dopant layer in a first side of the epitaxial layer; adhering a carry layer over the first dopant layer for carrying the substrate layer; grinding a second side of the substrate layer for exposing a second side of the epitaxial layer; implanting the first type of dopant into the epitaxial layer from the second side of the epitaxial layer to form a second dopant layer in the second side of the epitaxial layer; forming at least one metal layer over the second dopant layer after forming the second dopant layer in the second side of the epitaxial layer; removing the carry layer; and forming a color filtering module over the first dopant layer.

Abstract: A sensing pixel array is provided and includes a plurality of pixels disposed in an array. Each pixel operates during an exposure period and a readout period and generates a readout signal. Each pixel includes a sensing unit and a sampling unit. The sensing unit senses light to generate a sensing signal during the exposure period. The sampling unit samples the sensing signal to generate a sensing output signal which serves as the readout signal during the readout period. During the exposure period, the sampling unit acts as a memory unit for storing an input signal and outputting an accessed output signal which serves as the readout signal.

Abstract: A method for forming an image sensing device is disclosed. An epitaxy layer having the first conductivity type is formed on a substrate, wherein the epitaxy layer comprises a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light. A first deep well is formed in a lower portion of the epitaxy layer for reducing pixel-to-pixel talk of the image sensing device. A second deep well is formed in a lower portion of the epitaxy layer.

Abstract: A back side illumination (BSI) image sensor includes at least one pixel. The pixel area includes a photo diode and a transfer transistor. The transfer transistor has a control electrode made of a gate poly and a gate oxide for receiving a control instruction, a first electrode coupled to the photo diode, and a second electrode, wherein an induced conduction channel of the transfer transistor partially surrounds a recessed space which is filled with the gate poly and the gate oxide of the transfer transistor.

Abstract: A sensing device is provided. The sensing device includes a sensing pixel array and a memory unit. The sensing pixel array is formed in a substrate and includes a plurality of pixels for sensing light. The substrate has a first side and a second side opposite to the first side and receives the light through the first side for sensing the light. The memory unit is formed on the second side of the substrate for memorization.

Abstract: In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to construct a semiconductor structure having an etch-stop layer above a photodiode region and a first dielectric layer above the etch-stop layer. The process may be configured to etch a LP funnel through the first dielectric layer. And the process may be further configured to stop the etching of the LP funnel upon reaching and removing of the etch-stop layer.

Abstract: A fabricating method of an image sensor includes the steps of: providing a substrate; forming sensing elements on the substrate; forming microlenses on the sensing elements; filling a stuffed material on the microlenses, and air regions are formed in the stuffed material; and forming optical filters on the stuffed material.

Abstract: An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.

Abstract: A method for processing a pixel having a plurality of color component values includes: utilizing a processing circuit to generate elements of a skin color correction matrix according to elements of a global color correction matrix and a predetermined value corresponding to the pixel; utilizing the processing circuit to generate elements of a current color correction matrix according to elements of the global color correction matrix, the skin color correction matrix and the color component values of the pixel; and adjusting the color component values of the pixel according to the elements of the current color correction matrix.

Abstract: A color interpolation system is disclosed. An enhancement unit receives raw signals from an image sensor, and then processes the raw signals to output an enhanced first signal. A first interpolation unit receives and processes a raw first signal and accordingly outputs an interpolated first signal. A gain generator generates an enhancement gain according to the enhanced first signal and the interpolated first signal.

Abstract: In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to construct a semiconductor structure having an etch-stop layer above a photodiode region and a first dielectric layer above the etch-stop layer. The process may be configured to etch a LP funnel through the first dielectric layer. And the process may be further configured to stop the etching of the LP funnel upon reaching and removing of the etch-stop layer.

Abstract: A method of fabricating an image sensor and an image sensor thereof are provided. The method comprises: providing a mask; utilizing the mask at a first position to form a first group of micro-lenses having a first height on a first group of color filters of a color filter array on a pixel array; shifting the mask from the first position to a second position, wherein a distance between the first position and the second position is substantially equal to a width of a pixel of the pixel array; and utilizing the mask at the second position to form a second group of micro-lenses having a second height, different from the first height, on a second group of color filters of the color filter array.

Abstract: An image sensor including a plurality of first sensing pixels, a plurality of second sensing pixels, and a readout circuit is disclosed. The first sensing pixels are disposed within a sensitive region. The second sensing pixels are disposed within a non-sensitive region. The readout circuit repeatedly reads the output signals of the second sensing pixels to obtain an offset. The readout circuit processes the output signals of the first sensing pixels according to the offset.

Abstract: A pipelined recycling analog-to-digital converter (ADC), which converts a first analog input signal into a first digital output signal, including a first conversion stage and a second conversion stage is disclosed. The first conversion stage includes a first processing unit and a second processing unit. The first and the second processing units execute a number of conversion operations. For each conversion operation, an analog value and a digital code are generated by the first or the second processing unit. The first and the second processing units share an operational amplifier, and for each conversion operation. The second conversion stage includes a comparing unit which determines a specific analog value among the analog values generated by the first and the second processing units. When the specific analog value is not located within a predetermined range, the comparing unit generates a reset pulse to reset the operational amplifier.