Abstract: A sensing device includes a pixel unit and an output unit. The pixel unit includes a sensing element, a transfer transistor, a reset transistor, and an output transistor. The transfer transistor is coupled between the sensing element and a floating diffusion node. The reset transistor is coupled between a first node and the floating diffusion node. The output transistor has a control terminal coupled to the floating diffusion node and an input terminal coupled to the first node. During a readout period, the reset transistor is controlled by a reset phase to reset a level of the floating diffusion node. The output unit generates a pixel output signal at the first node according to the level of the floating diffusion node and a reference signal. During the readout period, the reference signal is at a higher level, and after the reset phase, the reference signal is at a lower level.

Abstract: A sensing device is provided. The sensing device includes a sensing pixel array and a memory unit. The sensing pixel array is formed in a substrate and includes a plurality of pixels for sensing light. The substrate has a first side and a second side opposite to the first side and receives the light through the first side for sensing the light. The memory unit is formed on the second side of the substrate for memorization.

Abstract: An analog dark-signal averaging circuit and method for an image sensor are disclosed. Each sub-circuit of the dark-signal averaging circuit correspondingly inputs a signal from a pixel circuit of the image sensor, and each sub-circuit includes a correlated double sampling (CDS) circuit. The capacitors of the sub-circuits are controllably coupled by average switches, thereby averaging the reset signals and the image signals among the black pixels.

Abstract: In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to etch a first portion of a LP funnel in a dielectric layer of a semiconductor structure using a web etching process, wherein the dielectric layer is above a photodiode region. The process may also be configured to etch a second portion of the LP funnel in the dielectric layer subsequent to the etching of the first portion of the LP funnel, wherein the second portion of the LP funnel is etched below the first portion of the LP funnel using a dry etching process.

Abstract: In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to construct a semiconductor structure having an etch-stop layer above a photodiode region and a first dielectric layer above the etch-stop layer. The process may be configured to etch a LP funnel through the first dielectric layer. And the process may be further configured to stop the etching of the LP funnel upon reaching and removing of the etch-stop layer.

Abstract: Apparatus and method for contrast enhancement are disclosed. An adjustable blending unit is utilized for adjustably blending a linear contrast function with a nonlinear contrast function, thereby resulting in an adjustable contrast curve. The nonlinear contrast function is adjustable by a blending parameter such that distance of the contrast curve to linear contrast curve may be changed.

Abstract: A driving circuit includes at least a driving unit. The driving circuit includes a first bias component, a second bias component, and four metal-oxide-semiconductor (MOS) transistors. The first bias component has a first node coupled to a first reference voltage and a second node for outputting a first bias current. The second bias component has a first node for draining a second bias current and a second node coupled to a second reference voltage different from the first reference voltage. Each of the MOS transistors has a control node for receiving one of input signal pairs, a node coupled to one of the bias components and another node coupled to one of the output ports of the driving circuit. The four MOS transistors are of a same conductive type.

Abstract: A process and structure of a back side illumination (BSI) image sensor are disclosed. An n-type doped region is formed in a substrate, and a transfer gate is formed on top of the semiconductor substrate. A p-type doped region is formed in the n-type doped region either using the transfer gate as a mask or is non-self aligned formed.

Abstract: An adaptive frame rate control system and method for an image sensor includes an amplifier which amplifies a sensor output signal of the image sensor with a gain. An automatic exposure gain (AEG) controller determines a product of exposure time and the gain (EGP) based on incident light intensity, and controls a timing controller and the amplifier, to adjust the exposure time and the gain of the image sensor such that the amplified sensor output signal may approximately approach a sensor target signal, where the change of the exposure time is preferred over the change of the gain.

Abstract: Multi-phase black level calibration (BLC) methods and systems are generally disclosed. According to one embodiment of the present invention, an image sensor comprises a pixel sensor array, a timing generator, and a front-end processing block. The front-end processing block also includes a first summing junction, a first BLC block, and a second BLC block. According to a first timing signal from the timing generator, the first BLC block is configured to iteratively generate a first calibration signal in a first phase based on a first set of adjusted black level signals associated with a first set of black pixels, a changing accumulator step, and a predetermined condition associated with a first target black level. According to a second timing signal from the timing generator, the second BLC block is configured to generate a second calibration signal for a second summing junction to apply to an image signal associated with one or more active pixels in the frame in a second phase.

Abstract: Black level calibration methods and systems are generally disclosed. According to one embodiment of the present invention, a method of calibrating a black level signal in a frame includes performing an iteration of averaging a first set of digital values corresponding to a first set of adjusted black level signals associated with a first set of black pixels of the frame, determining whether an average value based on the first set of digital values has reached a target black level, determining a calibration offset based on a difference between the average value and the target black level and an accumulator step, converting the calibration offset to an analog signal, generating a calibration signal based on the analog signal for a second set of black pixels of the frame, and repeating the iteration for the frame until a predetermined condition is determined to have been met.

Abstract: A signal chain of an imaging system is disclosed. The system includes three circuit stages. The first circuit stage includes a programmable gain amplifier (PGA) and a black level compensation (BLC) circuit that form a BLC loop. The second circuit stage includes an analog-to-digital converter (ADC), where a dark signal offset is added at an input of the ADC. The third circuit stage includes a digital gain circuit and a digital loop that makes a final output of the imaging system settle on a target level in the BLC mode.

Abstract: An image sensor with an active pixel array and peripheral dummy pixels is disclosed. The dummy pixels are located between (a) at least a portion of the active pixel array and (b) undesired or potentially interfering noise from a noise source. Outputs of the dummy pixels are coupled to float with respect to the active pixel array, thereby blocking the noise from being coupled into the active pixel array.

Abstract: A system and method of generating a color correction matrix (CCM) for an image sensor are disclosed. Quantum efficiency (QE) spectra of pixels of the image sensor illuminated by a physical light source are measured. Subsequently, color values of the image sensor and color values in a predetermined color space are determined according to the QE spectra and predetermined reference data essential for deriving the color values. Finally, the CCM for the image sensor is generated by applying a fitting algorithm on the color values of the image sensor and the color values in the predetermined color space.

Abstract: A driving circuit includes at least a driving unit, a first processing unit and a second processing unit. The driving circuit includes a first bias component, a second bias component, a first pre-emphasis unit, a second pre-emphasis unit, and a transmitter unit. The first bias component has a first node coupled to a first reference voltage and a second node for outputting a first bias current. The second bias component has a first node for draining a second bias current and a second node coupled to a second reference voltage different from the first reference voltage.

Abstract: One embodiment of the present invention describes a pixel circuit that comprises at least one photodiode, a first transistor coupled between the photodiode and a floating diffusion node, a second transistor coupled between the floating diffusion node and a modifiable driving voltage signal, and a third transistor having a gate coupled to the floating diffusion node, a source coupled to a signal output, and a drain coupled to a constant voltage. Another embodiment of the present invention provides a method for driving the pixel circuit, which comprises resetting the photodiode and the floating diffusion node, exposing the photodiode to light to accumulate charges, selecting the pixel circuit by switching the driving voltage signal from a first voltage level to a second voltage level, retrieving a reference voltage from the selected pixel circuit, and retrieving an image signal from the selected pixel circuit corresponding to the accumulated charges.