Abstract: A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen support table configured for supporting the specimen, an objective lens for focusing the at least one charged particle beam, a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam, and a flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening at which a conductive membrane is provided which is positioned between the flood gun and the specimen support table.

Abstract: A method of operating a charged particle beam device is provided. The charged particle beam device includes a beam separator that defines an optical axis, and includes a magnetic beam separation portion and an electrostatic beam separation portion. The method includes generating a primary charged particle beam, and applying a voltage to a sample, the voltage being set to a first value to determine a first landing energy of the primary charged particle beam. The method further includes creating an electric current in the magnetic beam separation portion, the current being set to a first value to generate a first magnetic field, and applying a voltage to the electrostatic beam separation portion, the voltage being set to a first value to generate a first electric field.

Abstract: A retarding field scanning electron microscope for imaging a specimen is described. The microscope includes a scanning deflection assembly configured for scanning an electron beam over the specimen, one or more controllers in communication with the scanning deflection assembly for controlling a scanning pattern of the electron beam, and a combined magnetic-electrostatic objection lens configured for focusing the electron beam, wherein the objective lens includes a magnetic lens portion and an electrostatic lens portion. The electrostatic lens portion includes an first electrode configured to be biased to a high potential, and a second electrode disposed between the first electrode and the specimen plane, the second electrode being configured to be biased to a potential lower than the first electrode, wherein the second electrode is configured for providing a retarding field of the retarding field scanning electron microscope.

Abstract: A scanning charged particle beam device configured to image a specimen is described. The scanning charged particle beam device includes a source of charged particles, a condenser lens for influencing the charged particles, an aperture plate having at least two aperture openings to generate at least two primary beamlets of charged particles, at least two deflectors, wherein the at least two deflectors are multi-pole deflectors, a multi-pole deflector with an order of poles of 8 or higher, an objective lens, wherein the objective lens is a retarding field compound lens, a beam separator configured to separate the at least two primary beamlets from at least two signal beamlets, a beam bender, or a deflector or a mirror configured to deflect the at least two signal beamlets, wherein the beam bender is a hemispherical beam bender or beam bender having at least two curved electrodes, and at least two detector elements.

Abstract: An electron beam device comprises: a beam emitter for emitting a primary electron beam; an objective electron lens for focusing the primary electron beam onto a specimen, the objective lens defining an optical axis; a beam separator having a first dispersion for separating a signal electron beam from the primary electron beam; and a dispersion compensation element. The dispersion compensation element has a second dispersion, the dispersion compensation element being adapted for adjusting the second dispersion independently of an inclination angle of the primary beam downstream of the dispersion compensation element, such that the second dispersion substantially compensates the first dispersion. The dispersion compensation element is arranged upstream, along the primary electron beam, of the beam separator.

Abstract: A scanning charged particle beam device configured to image a specimen is described. The scanning charged particle beam device includes a source of charged particles, a condenser lens for influencing the charged particles, an aperture plate having at least two aperture openings to generate at least two primary beamlets of charged particles, at least two deflectors, wherein the at least two deflectors are multi-pole deflectors, a multi-pole deflector with an order of poles of 8 or higher, an objective lens, wherein the objective lens is a retarding field compound lens, a beam separator configured to separate the at least two primary beamlets from at least two signal beamlets, a beam bender, or a deflector or a mirror configured to deflect the at least two signal beamlets, wherein the beam bender is a hemispherical beam bender or beam bender having at least two curved electrodes, and at least two detector elements.

Abstract: A charged particle beam source device adapted for generating a charged particle beam is provided. The charged particle beam source device includes an emitter tip adapted for providing charged particles. Furthermore, an extractor electrode having an aperture opening is provided for extracting the charged particles from the emitter tip. An aperture angle of the charged particle beam is 2 degrees or below the aperture angle being defined by a width of the aperture opening and a distance between the emitter tip and the extractor electrode, wherein the distance between the emitter tip and the extractor electrode is a range from 0.1 mm to 2 mm.

Abstract: A secondary charged particle detection device for detection of a signal beam is described. The device includes a detector arrangement having at least two detection elements with active detection areas, wherein the active detection areas are separated by a gap (G), a particle optics configured for separating the signal beam into a first portion of the signal beam and into at least one second portion of the signal beam, and configured for focusing the first portion of the signal beam and the at least one second portion of the signal beam. The particle optics includes an aperture plate and at least a first inner aperture openings in the aperture plate, and at least one second radially outer aperture opening in the aperture plate, wherein the first aperture opening has a concave shaped portion, particularly wherein the first aperture opening has a pincushion shape.

Abstract: A charged particle detector arrangement is described. The detector arrangement includes a detection element and a collector electrode configured to collect charged particles released from the detection element upon impact of signal charged particles.

Abstract: A gun arrangement configured for generating a primary electron beam for a wafer imaging system is described. The arrangement includes a controller configured for switching between a normal operation and a cleaning operation, a field emitter having an emitter tip adapted for providing electrons and emitting an electron beam along an optical axis, an extractor electrode adapted for extracting the electron beam from the emitter tip electrode, a suppressor electrode, and at least one auxiliary emitter electrode arranged radially outside the suppressor electrode, and provided as a thermal electron emitter for thermally emitting electrons towards the optical axis.

Abstract: A secondary charged particle detection device for detection of a signal beam is described. The device includes a detector arrangement having at least two detection elements with active detection areas, wherein the active detection areas are separated by a gap (G), a particle optics configured for separating the signal beam into a first portion of the signal beam and into at least one second portion of the signal beam, and configured for focusing the first portion of the signal beam and the at least one second portion of the signal beam. The particle optics includes an aperture plate and at least a first inner aperture openings in the aperture plate, and at least one second radially outer aperture opening in the aperture plate, wherein the first aperture opening has a concave shaped portion, particularly wherein the first aperture opening has a pincushion shape.

Abstract: A condenser lens arrangement for an electron beam system is described. The condenser lens arrangement includes a magnetic condenser lens adapted for generating a magnetic condenser lens field, the condenser lens having a symmetry axis, and a magnetic deflector adapted for generating a magnetic deflector field. The deflector is configured so that the superposition of the magnetic condenser lens field and the magnetic deflector field results in an optical axis of the condenser lens arrangement being movable relative to the symmetry axis. Further, an electron beam optical system including a condenser lens arrangement and a method for moving a condenser lens are described.

Abstract: A charged particle beam device is described. In one aspect, the charged particle beam device includes a charged particle beam source, and a switchable multi-aperture for generating two or more beam bundles from a charged particle beam which includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement configured for individually blanking the two or more beam bundles; and a stopping aperture for blocking beam bundles. The device further includes a control unit configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens configured for focusing the two or more beam bundles on a specimen or wafer.

Abstract: A method of pre-treating an ultra high vacuum charged particle gun chamber by ion stimulated desorption is provided. The method includes generating a plasma for providing a plasma ion source, and applying a negative potential to at least one surface in the gun chamber, wherein the negative potential is adapted for extracting an ion flux from the plasma ion source to the at least one surface for desorbing contamination particles from the at least one surface by the ion flux impinging on the at least one surface.

Abstract: An electron beam device 100 includes: a beam emitter 102 for emitting a primary electron beam 101; an objective electron lens 127 for focusing the primary electron beam 101 onto a specimen 130, the objective lens defining an optical axis 126; a beam tilting arrangement 103 configured to direct the primary electron beam 101 to the electron lens 127 at an adjustable offset from the optical axis 126 such that the objective electron lens 127 directs the electron beam 101 to strike the specimen 130 at an adjustable oblique beam landing angle, whereby a chromatic aberration is caused; a beam separator 115 having a first dispersion for separating a signal electron beam 135 from the primary electron beam 101; and a dispersion compensation element 104 adapted to adjust a compensation dispersion of the primary electron beam 101 so as to compensate for a beam aberration resulting from the first dispersion and from the chromatic aberration.

Abstract: A gun arrangement configured for generating a primary electron beam for a wafer imaging system is described. The arrangement includes a controller configured for switching between a normal operation and a cleaning operation, a field emitter having an emitter tip adapted for providing electrons and emitting an electron beam along an optical axis, an extractor electrode adapted for extracting the electron beam from the emitter tip electrode, a suppressor electrode, and at least one auxiliary emitter electrode arranged radially outside the suppressor electrode, and provided as a thermal electron emitter for thermally emitting electrons towards the optical axis.

Abstract: A charged particle beam source device adapted for generating a charged particle beam is provided. The charged particle beam source device includes an emitter tip adapted for providing charged particles. Furthermore, an extractor electrode having an aperture opening is provided for extracting the charged particles from the emitter tip. An aperture angle of the charged particle beam is 2 degrees or below the aperture angle being defined by a width of the aperture opening and a distance between the emitter tip and the extractor electrode, wherein the distance between the emitter tip and the extractor electrode is a range from 0.1 mm to 2 mm.

Abstract: A method of compensating mechanical, magnetic and/or electrostatic inaccuracies in a scanning charged particle beam device is described. The method includes an alignment procedure, wherein the following steps are conducted: compensating 4-fold astigmatism with an element having at least 8-pole compensation capability, wherein the aligning and compensating steps of the alignment procedure act on a charged particle beam with beam dimensions in two orthogonal directions each of at least 50 ?m and coaxially aligned with at least the element having at least the 8-pole compensation capability.

Abstract: A focused ion beam device is described comprising a gas field ion source with an analyzer for analyzing and classifying the structure of a specimen, a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip, the emitter tip has a base tip comprising a first material and a supertip comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission center of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.

Abstract: An electron beam wafer imaging system is described. The system includes an emitter for emitting an electron beam; a power supply for applying a voltage between the emitter and the column housing of at least 20 kV; an objective lens for focusing the electron beam on a wafer, wherein the magnetic lens component and the electrostatic lens component substantially overlap each other, wherein the electrostatic lens component has a first electrode, a second electrode and a third electrode; and a control electrode positioned along an optical axis from the position of the third electrode to the position of a specimen stage, wherein the control electrode is configured for control of signal electrons; a controller to switch between a first operational mode and a second operational mode, wherein the controller is connected to a further power supply for switching between the first operational mode and the second operational mode.