Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

Abstract: Methods and systems for bi-directional multi-port power conversion systems and applications are disclosed. In some sample embodiments, current-modulating power converters can be used to provide conversion between synchronous and asynchronous power. In some sample embodiments, current-modulating power converters can perform power conversion can be performed to and from three-phase AC with an active neutral line. In some sample embodiments, current-modulating power converters can convert between synchronous and asynchronous power and also support three-phase AC with active neutral.

Abstract: The present application teaches, among other innovations, methods and circuits for operating a B-TRAN (double-base bidirectional bipolar junction transistor). A base drive circuit is described which provides high-impedance drive to the base contact region on whichever side of the device is operating as the collector (at a given moment). (The B-TRAN, unlike other bipolar junction transistors, is controlled by applied voltage rather than applied current.) The preferred implementation of the drive circuit is operated by control signals to provide diode-mode turn-on and pre-turnoff operation, as well as a hard ON state with a low voltage drop (the “transistor-ON” state). In some but not necessarily all preferred embodiments, an adjustable low voltage for the gate drive circuit is provided by a self-synchronizing rectifier circuit.

Abstract: Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

Abstract: Methods and systems for determining maximum power points in photovoltaic inverters. The present application describes unique PV converter topologies including algorithms embedded in controllers. The algorithms can be a variable step size binary search to adjust the input conductance in order to find the conductance that will produce the maximum power out of a PV array. Due to these special topologies, the PV inverter will often not experience sudden shutoffs when typical low voltage cut-off limit is reached since a low-current cut-off limit is also set.

Abstract: The present application provides (in addition to more broadly applicable inventions) improvements which are particularly applicable to two-sided power semiconductor devices which use bipolar conduction. In this class of devices, the inventor has realized that two or three of the four (or more) semiconductor doping components which form the carrier-emission structures and control structures in the active device (array) portion of a two-sided power device can also be used, with surprising advantages, to form field-limiting rings around the active arrays on both surfaces. Most preferably, in some but not necessarily all embodiments, a shallow implant of one conductivity type is used to counterdope the surface of a well having the other conductivity type. This shallow implant, singly or in combination with another shallow implant of the same conductivity type, works to shield the well from the effects of excess charge at or above the surface of the semiconductor material.

Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

Abstract: A symmetrically-bidirectional bipolar transistor circuit where the two base contact regions are clamped, through a low-voltage diode and a resistive element, to avoid bringing either emitter junction to forward bias. This avoids bipolar gain in the off state, and thereby avoids reduction of the withstand voltage due to bipolar gain.

Abstract: Methods and systems for bi-directional multi-port power conversion systems and applications are disclosed. In some sample embodiments, current-modulating power converters can be used to provide conversion between synchronous and asynchronous power. In some sample embodiments, current-modulating power converters can perform power conversion can be performed to and from three-phase AC with an active neutral line. In some sample embodiments, current-modulating power converters can convert between synchronous and asynchronous power and also support three-phase AC with active neutral.

Abstract: Methods and systems for double-sided semiconductor device fabrication. Devices having multiple leads on each surface can be fabricated using a high-temperature-resistant handle wafer and a medium-temperature-resistant handle wafer. Dopants can be introduced on both sides shortly before a single long high-temperature diffusion step diffuses all dopants to approximately equal depths on both sides. All high-temperature processing occurs with no handle wafer or with a high-temperature handle wafer attached. Once a medium-temperature handle wafer is attached, no high-temperature processing steps occur. High temperatures can be considered to be those which can result in damage to the device in the presence of aluminum-based metallizations.

Abstract: The present application teaches configurations in which the multiple-ON-mode bidirectional bipolar switch is used to provide very simple circuit configurations which can—when requirements are not stringent—perform certain electrical conversions which might otherwise require a PPSA (Power Packet Switching Architecture) converter.

Abstract: A symmetrically-bidirectional power bipolar transistor having, on both surfaces of a semiconductor die, an n-type emitter/collector region which is completely surrounded by a first recessed field plate, which is itself completely surrounded by a p-type region including p+ contact areas. All of the p-type region is preferably bordered and surrounded by a second recessed field plate trench. The second recessed field plate trench is itself surrounded by an n-type region which is wholly or partially made of the same diffusion as the emitter/collector regions, but which is not connected to the metallization which connects the emitter/collector regions to extermal terminals.

Abstract: Bidirectional symmetrically-bidirectional power bipolar devices are laid out so that each emitter/collector region, on either side of the die, is laterally surrounded entirely by trenches which preferably contain insulated field plates, and which prevent lateral propagation of carriers. Most preferably the emitter/collector regions are laid out as stripes, so no part of the emitter/collector region is unexpectedly far from a good low-resistance connection to the base contact.

Abstract: The present application teaches, inter alia, methods and circuits for operating a B-TRAN (double-base bidirectional bipolar junction transistor). Exemplary base drive circuits provide high-impedance drive to the base contact region on the side of the device instantaneously operating as the collector. (The B-TRAN is controlled by applied voltage rather than applied current.) Current signals operate preferred implementations of drive circuits to provide diode-mode turn-on and pre-turnoff operation, as well as a hard ON state with low voltage drop (the “transistor-ON” state). In some preferred embodiments, self-synchronizing rectifier circuits provide adjustable low voltage for gate drive circuits. In some preferred embodiments, the base drive voltage used to drive the c-base region (on the collector side) is varied while base current at that terminal is monitored, so no more base current than necessary is applied. This solves the difficult challenge of optimizing base drive in a B-TRAN.

Abstract: Methods and systems for power conversion. An energy storage capacitor is contained within an H-bridge subcircuit which allows the capacitor to be connected to the link inductor of a Universal Power Converter with reversible polarity. This provides a “pseudo-phase” drive capability which expands the capabilities of the converter to compensate for zero-crossings in a single-phase power supply. Conversion between, e.g., single phase and three phase power is enabled, in either direction, without sacrificing workload performance.

Abstract: Methods and systems for active power conditioner topologies including semiconductor input and output switches, an inductor, a capacitor in parallel with the inductor, and input and output filter capacitors. The present power conditioners can convert power from an input to an output, can supply or absorb reactive power, and can regulate voltage and current waveforms for improving power factor. Additionally, the present power conditioners can act as a variable frequency drive for regulating voltages and frequencies in power converters. The present power conditioners can also correct harmonic oscillations that can damage power conversion equipment.

Abstract: Methods and systems for transforming electric power between two or more portals using multiple power modules. Any or all portals can be DC, single phase AC, or multi-phase AC. Individual power modules comprise a plurality of bi-directional conducting and blocking semiconductor switches, and an inductor and parallel capacitor (reactance). The switches alternately connect the reactance between said portals, such that energy is transferred into the inductor from one or more input portals and/or phases, then transferred out of the inductor to one or more output portals and/or phases, with said parallel capacitor facilitating “soft” turn-off, and with any excess inductor energy being returned to the input. Dual power modules can operate 90 degrees out of phase. This configuration allows use of the same I/O filter capacitors as with a single power module, while achieving twice the total power produced by the power converter, reducing ripple voltage and doubling ripple frequency.

Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.