Abstract: A method for bonding two substrates is described, comprising providing a first and a second silicon substrate, providing a raised feature on at least one of the first and the second silicon substrate, forming a layer of gold on the first and the second silicon substrates, and pressing the first substrate against the second substrate, to form a thermocompression bond around the raised feature. The high initial pressure caused by the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature, while the complete embedding of the raised feature into the opposing surface allows for the two bonding planes to come into contact. This large contact area provides for high strength.
Abstract: A microfabricated optical apparatus that includes a light source driven by a waveform, a turning mirror, and a beam shaping element, wherein the waveform is delivered to the light source by at least one through silicon via. The microfabricated optical apparatus may also include a light-sensitive receiver which generates an electrical signal in response to an optical signal. The electrical signal may be communicated to external devices by at least one additional through silicon via.
Abstract: A through substrate via is formed by disposing a quantity of solder material at the top of a through hole formed in a substrate, coating the hole with a wetting layer, and melting the solder material such that it flows into the hole. The solder material may alloy with the wetting layer, freezing upon formation of the alloy. Subsequent processing steps may be performed at temperatures higher than the melting point of the solder material.
Type:
Application
Filed:
January 26, 2017
Publication date:
August 3, 2017
Applicant:
Innovative Micro Technology
Inventors:
Christopher S. GUDEMAN, Stuart Hutchinson
Abstract: A microfabricated optical apparatus that includes a light source or light detector in combination with an integrated turning surface to form a microfabricated optical subassembly. The integrated turning surface may be formed directly in the substrate material using gray scale lithography.
Type:
Application
Filed:
November 18, 2016
Publication date:
May 25, 2017
Applicant:
Innovative Micro Technology
Inventors:
Christopher S. GUDEMAN, Sangwoo Kim, Stuart Hutchinson, Marin SIGURDSON
Abstract: A microfabricated optical apparatus that includes a light source driven by a waveform, a turning mirror, and a beam shaping element, wherein the waveform is delivered to the light source by at least one through silicon via.
Abstract: A microfabricated optical apparatus that includes a light source driven by a waveform, a turning mirror, and a beam shaping element, wherein the waveform is delivered to the light source by at least one through silicon via.
Abstract: An MEMS device, having two substantially parallel surfaces are separated by an initial distance. At least one of the surfaces includes a raised feature that limits the gap between the surfaces to less than the initial distance when an actuating voltage is applied. In some embodiments, the raised feature limits the gap to about 66% of the initial distance.
Abstract: A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.
Abstract: A method for creating small features in an Al/Ag/Ti multilayer stack is disclosed. The method uses a combination of wet and dry etching techniques to anisotropically etch the layers.
Type:
Grant
Filed:
May 2, 2016
Date of Patent:
November 15, 2016
Assignee:
Innovative Micro Technology
Inventors:
John Harley, Jeffery F. Summers, Tao Gilbert
Abstract: Systems and methods for forming an electrostatic MEMS switch include forming a movable cantilevered beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate. The cantilevered beam may be formed by etching the perimeter shape in the device layer of an SOI substrate. An additional void may be formed in the movable beam such that it bends about an additional hinge line as a result of the additional void. This may give the beam and switch advantageous kinematic characteristics.
Type:
Application
Filed:
March 4, 2016
Publication date:
September 15, 2016
Applicant:
Innovative Micro Technology
Inventors:
Christopher S. GUDEMAN, Paul J. RUBEL, Marin Sigurdson
Abstract: A bonding technology is disclosed that can form an anodic, conductive bond between two optically transparent substrates. The anodic bond may be accompanied by a metal alloy, solder, eutectic and polymer bond. The first anodic bond may provide one attribute such as hermeticity, whereas the second bond may provide another attribute, such as electrical conductivity.
Abstract: A MEMS-based system and a method are described for separating a target particle from the remainder of a fluid stream. The system makes use of a unique, microfabricated movable structure formed on a substrate, which moves in a rotary fashion about one or more fixed points, which are all located on one side of the axis of motion. The movable structure is actuated by a separate force-generating apparatus, which is entirely separate from the movable structure formed on its substrate. This allows the movable structure to be entirely submerged in the sample fluid.
Abstract: A microfabricated optical apparatus that includes a light source driven by a waveform, a turning mirror, and a beam shaping element, wherein the waveform is delivered to the light source by at least one through silicon via.
Abstract: A method for forming a cavity in a microfabricated structure, includes the sealing of that cavity with a low temperature solder. The method may include forming a sacrificial layer over a substrate, forming a flexible membrane over the sacrificial layer, forming a release hole through a flexible membrane to the sacrificial layer, introducing an etchant through the release hole to remove the sacrificial layer, and then sealing that release hole with a low temperature solder.
Abstract: A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an substantially continuous annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the substantially continuous annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate. The substantially continuous annulus may be interrupted by at least one tether which connects the silicon post to the silicon substrate. The tether may be formed of a thing isthmus of silicon, or some suitable insulating material.
Abstract: A bonding technology is disclosed that can form an anodic, conductive bond between two optically transparent substrates. The anodic bond may be accompanied by a metal alloy, solder, eutectic and polymer bond. The first anodic bond may provide one attribute such as hermeticity, whereas the second bond may provide another attribute, such as electrical conductivity.
Abstract: A method for forming a feature in a device layer, including forming a first layer of a liftoff material and a second layer of photoresist over the liftoff material, exposing the photoresist and developing the photoresist and the liftoff layer. The photoresist develops at a slower rate than the liftoff layer. The development results in a first opening in the lift off layer and a second opening in the photoresist layer wherein the first opening is smaller than the second opening because of the different developing rates. The device layer is then dry etched or ion milled through the opening. Subsequent removal of the first layer and second layer leaves a clean surface of the patterned device layer, without the fences that can be formed using other methods.
Abstract: Systems and methods for forming an encapsulated device include a substantially hermetic seal which seals a device in an environment between two substrates. The substantially hermetic seal is formed by an alloy of two metal layers, one having a lower melting temperature than the other. The metal layers may be deposited two substrates, along with a raised feature formed under at least one of the metal layers. The two metals may form an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. The formation of the alloy may be improved by the use of an organic wetting layer adjacent to the lower melting temperature metal. Design guidelines are set forth for reducing or eliminating the leakage of molten metal into the areas adjacent to the bondlines.
Abstract: A bonding technology is disclosed that can form an anodic, conductive bond between two optically transparent substrates. The anodic bond may be accompanied by a Second bond, for example a metal alloy, solder, eutectic and polymer bond. The two bonds may be used for the same or a different purpose, and may be selected for the following attributes: hermeticity, electrical conductivity, low RF loss, high adhesive strength, leak resistance, thermal conductivity. The attributes for each bonding technology may be the same, or they may be different.
Abstract: Systems and methods for forming an encapsulated device include a substantially hermetic seal which seals a device in an environment between two substrates. The substantially hermetic seal is formed by an alloy of two metal layers, one having a lower melting temperature than the other. The metal layers may be deposited two substrates, along with a raised feature formed under at least one of the metal layers. The two metals may form an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. The formation of the alloy may be improved by the use of an organic wetting layer adjacent to the lower melting temperature metal. Design guidelines are set forth for reducing or eliminating the leakage of molten metal into the areas adjacent to the bondlines.