Patents Assigned to InVisage Technologies, Inc.
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Patent number: 9666634Abstract: In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.Type: GrantFiled: March 10, 2016Date of Patent: May 30, 2017Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Patent number: 9609190Abstract: In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array includes at least four megapixels and the second image sensor array includes one-half or less than the number of pixels in the first image sensor array.Type: GrantFiled: October 30, 2013Date of Patent: March 28, 2017Assignee: InVisage Technologies, Inc.Inventors: Jess Jan Young Lee, Michael Hepp, Edward Hartley Sargent
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Patent number: 9570502Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.Type: GrantFiled: June 20, 2016Date of Patent: February 14, 2017Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Jason Paul Clifford, Gerasimos Konstantatos, Ian Howard, Ethan J. D. Klem, Larissa Levina
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Patent number: 9538102Abstract: In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.Type: GrantFiled: August 26, 2013Date of Patent: January 3, 2017Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Jess Jan Young Lee, Pierre Henri Rene Della Nave
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Patent number: 9491388Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: GrantFiled: December 22, 2014Date of Patent: November 8, 2016Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
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Patent number: 9491383Abstract: Systems and methods are disclosed for reducing reset noise in an image sensor. Voltage on the column read out is sensed during reset. When the voltage reaches a desired threshold level, a voltage is asserted on the column read out line that turns off the reset transistor. Using column circuitry to turn off the reset transistor may be used to reduce noise associated with the reset switch. In example embodiments, a comparator may be included on each column line to determine when the threshold voltage has been reached and to trigger the assertion of the turn off voltage on the column line.Type: GrantFiled: June 5, 2014Date of Patent: November 8, 2016Assignee: InVisage Technologies, Inc.Inventors: David Michael Boisvert, Keith Glen Fife
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Patent number: 9451188Abstract: In various embodiments, an image sensor and method of using an image sensor are described. In an example embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions with each pixel region comprising an optically sensitive material over the substrate and positioned to receive light. There is a bias electrode for each pixel region, with the bias electrode configured to provide a bias voltage to the optically sensitive material of the respective pixel region. Also included is a pixel circuit for each pixel region with each pixel circuit comprising a charge store formed on the semiconductor substrate and a read out circuit, the charge store being in electrical communication with the optically sensitive material of the respective pixel region.Type: GrantFiled: May 22, 2014Date of Patent: September 20, 2016Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Pierre Henri Rene Della Nave
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Patent number: 9405376Abstract: Various embodiments comprise apparatuses and methods including a light sensor. The light sensor includes a first electrode, a second electrode, a third electrode, and a light-absorbing semiconductor in electrical communication with each of the first electrode, the second electrode, and the third electrode. A light-obscuring material to substantially attenuate an incidence of light onto a portion of the light-absorbing semiconductor is disposed between the second electrode and the third electrode. An electrical bias is to be applied between the second electrode, and the first and the third electrodes and a current flowing through the second electrode is related to the light incident on the light sensor. Additional methods and apparatuses are described.Type: GrantFiled: December 10, 2013Date of Patent: August 2, 2016Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Jess Jan Young Lee, Hui Tian
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Patent number: 9373736Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.Type: GrantFiled: June 4, 2015Date of Patent: June 21, 2016Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Jason Paul Clifford, Gerasimos Konstantatos, Ian Howard, Ethan J. D. Klem, Larissa Levina
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Patent number: 9369621Abstract: In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array includes at least four megapixels and the second image sensor array includes one-half or less than the number of pixels in the first image sensor array.Type: GrantFiled: May 3, 2011Date of Patent: June 14, 2016Assignee: InVisage Technologies, Inc.Inventors: Michael R. Malone, Pierre Henri Rene Della Nave, Michael Charles Brading, Jess Jan Young Lee, Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Patent number: 9293487Abstract: In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.Type: GrantFiled: August 27, 2014Date of Patent: March 22, 2016Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Patent number: 9257582Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: GrantFiled: August 11, 2014Date of Patent: February 9, 2016Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Publication number: 20160037070Abstract: Various embodiments comprise apparatuses and methods including an image sensor. In one example, the image sensor includes a read-out integrated circuit, a plurality of pixel electrodes, an optically sensitive layer, and a top electrical contact. In a first low-power mode, electrical current passing through the top electrical contact is configured to be sensed, and independent currents passing through the plurality of pixel electrodes are configured not to be sensed independently. In a second high-resolution mode, independent currents passing through the plurality of pixel electrodes are configured to be sensed independently. Additional methods and apparatuses are described.Type: ApplicationFiled: July 29, 2015Publication date: February 4, 2016Applicant: InVisage Technologies, Inc.Inventor: Emanuele Mandelli
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Patent number: 9231223Abstract: The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional biocontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer.Type: GrantFiled: May 6, 2013Date of Patent: January 5, 2016Assignee: InVisage Technologies, Inc.Inventors: Edward Sargent, Steven Ashworth McDonald, Shiguo Zhang, Larissa Levina, Gerasimos Konstantatos, Paul Cyr
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Patent number: 9209331Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.Type: GrantFiled: July 21, 2014Date of Patent: December 8, 2015Assignee: InVisage Technologies, Inc.Inventors: Igor Constantin Ivanov, Edward Hartley Sargent, Hui Tian
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Patent number: 9196781Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: October 7, 2013Date of Patent: November 24, 2015Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Patent number: 9054246Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.Type: GrantFiled: May 12, 2014Date of Patent: June 9, 2015Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Jason Paul Clifford, Gerasimos Konstantatos, Ian Howard, Ethan J. D. Klem, Larissa Levina
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Patent number: 8916947Abstract: In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.Type: GrantFiled: June 8, 2011Date of Patent: December 23, 2014Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Rajsapan Jain, Igor Constantin Ivanov, Michael R. Malone, Michael Charles Brading, Hui Tian, Pierre Henri Rene Della Nave, Jess Jan Young Lee
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Publication number: 20140291608Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.Type: ApplicationFiled: May 12, 2014Publication date: October 2, 2014Applicant: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Jason Paul Clifford, Gerasimos Konstantatos, Ian Howard, Ethan J.D. Klem, Larissa Levina
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Publication number: 20140253769Abstract: In various embodiments, an image sensor and method of using an image sensor are described. In an example embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions with each pixel region comprising an optically sensitive material over the substrate and positioned to receive light. There is a bias electrode for each pixel region, with the bias electrode configured to provide a bias voltage to the optically sensitive material of the respective pixel region. Also included is a pixel circuit for each pixel region with each pixel circuit comprising a charge store formed on the semiconductor substrate and a read out circuit, the charge store being in electrical communication with the optically sensitive material of the respective pixel region.Type: ApplicationFiled: May 22, 2014Publication date: September 11, 2014Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Pierre Henri Rene Della Nave