Patents Assigned to InVisage Technologies, Inc.
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Patent number: 8822897Abstract: In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.Type: GrantFiled: March 18, 2011Date of Patent: September 2, 2014Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Igor Constantin Ivanov, Edward Hartley Sargent
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Patent number: 8803128Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: GrantFiled: September 8, 2011Date of Patent: August 12, 2014Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Ghada Koleilat, Larissa Levina
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Patent number: 8785908Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.Type: GrantFiled: May 16, 2012Date of Patent: July 22, 2014Assignee: InVisage Technologies, Inc.Inventors: Igor Constantin Ivanov, Edward Hartley Sargent, Hui Tian
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Publication number: 20140175591Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: ApplicationFiled: October 7, 2013Publication date: June 26, 2014Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Patent number: 8759816Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.Type: GrantFiled: September 16, 2011Date of Patent: June 24, 2014Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Keith William Johnston, Andras Geza Pattantyus-Abraham, Jason Paul Clifford
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Patent number: 8736733Abstract: In various embodiments, an image sensor and method of using an image sensor are described. In an example embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions with each pixel region comprising an optically sensitive material over the substrate and positioned to receive light. There is a bias electrode for each pixel region, with the bias electrode configured to provide a bias voltage to the optically sensitive material of the respective pixel region. Also included is a pixel circuit for each pixel region with each pixel circuit comprising a charge store formed on the semiconductor substrate and a read out circuit, the charge store being in electrical communication with the optically sensitive material of the respective pixel region.Type: GrantFiled: March 18, 2011Date of Patent: May 27, 2014Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Pierre Henri Rene Della Nave
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Patent number: 8724366Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.Type: GrantFiled: March 21, 2013Date of Patent: May 13, 2014Assignee: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Jason Paul Clifford, Gerasimos Konstantatos, Ian Howard, Ethan J. D. Klem, Larissa Levina
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Publication number: 20140098267Abstract: In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.Type: ApplicationFiled: August 26, 2013Publication date: April 10, 2014Applicant: InVisage Technologies, Inc.Inventors: Hui Tian, Jess Jan Young Lee, Pierre Henri Rene Della Nave
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Patent number: 8643064Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: August 26, 2011Date of Patent: February 4, 2014Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Patent number: 8558286Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: August 25, 2011Date of Patent: October 15, 2013Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Patent number: 8546737Abstract: In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.Type: GrantFiled: October 28, 2010Date of Patent: October 1, 2013Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Jess Jan Young Lee, Pierre Henri Rene Della Nave
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Patent number: 8546853Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: August 12, 2011Date of Patent: October 1, 2013Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Publication number: 20130244366Abstract: The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional biocontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer.Type: ApplicationFiled: May 6, 2013Publication date: September 19, 2013Applicant: InVisage Technologies, Inc.Inventors: Edward Sargent, Steven Ashworth McDonald, Shiguo Zhang, Larissa Levina, Gerasimos Konstantatos, Paul Cyr
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Patent number: 8530991Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: August 24, 2011Date of Patent: September 10, 2013Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Patent number: 8530992Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: August 25, 2011Date of Patent: September 10, 2013Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Patent number: 8530940Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: August 24, 2011Date of Patent: September 10, 2013Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Patent number: 8530993Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: August 26, 2011Date of Patent: September 10, 2013Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Publication number: 20130228749Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.Type: ApplicationFiled: March 21, 2013Publication date: September 5, 2013Applicant: InVisage Technologies, Inc.Inventors: Edward Hartley Sargent, Jason Paul Clifford, Gerasimos Konstantatos, Ian Howard, Ethan J.D. Klem, Larissa Levina
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Patent number: 8525287Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: August 24, 2011Date of Patent: September 3, 2013Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent
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Patent number: 8513758Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.Type: GrantFiled: August 22, 2011Date of Patent: August 20, 2013Assignee: InVisage Technologies, Inc.Inventors: Hui Tian, Edward Sargent