Abstract: The present invention addresses the issue of providing an optical selective film that contributes to efficiently converting light into heat. This optical selective film is characterized in that: the optical selective film includes at least an Ag-containing layer, and an Ag diffusion prevention layer that is disposed adjacent to the Ag-containing layer; and the Ag diffusion prevention layer contains FeSix (X=1 to 2).

Abstract: A dielectric layer for an electrostatic chuck is formed of a ceramic material having a first phase including aluminum oxide and a second phase including composite carbonitride (Ti, Me)(C, N) that contains titanium as fine grains. The Me represents a transition element and metals of Group 4 to Group 6 such as Mo and W. The ceramic material that includes the second phase by 0.05 vol % to 2.5 vol % has a volume resistivity value of about 108 to 1013 (?·cm) necessary for a Johnsen-Rahbek type electrostatic chuck.

Abstract: Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm.

Abstract: A main object of the present invention is to provide a CZTS-based compound semiconductor whose band gap is different from that of a conventional CZTS-based compound semiconductor and a photoelectric conversion device prepared with the CZTS-based compound semiconductor. The present invention is a CZTS-based compound semiconductor in which a ratio of the number of moles of Cu to the total number of moles of Cu, Zn and Sn is larger than a ratio of the number of moles of Cu to the total number of moles of Cu, Zn and Sn configuring Cu2ZnSnS4, and a photoelectric conversion device prepared with the CZTS-based compound semiconductor.

Abstract: The solar-thermal conversion member includes a ?-FeSiz phase material. The solar-thermal conversion member exhibits a high absorptance for visible light at wavelengths of several hundred nm and a low absorptance for infrared light at wavelengths of several thousand nm and as a consequence efficiently absorbs visible light at wavelengths of several hundred nm and converts the same into heat and exhibits little thermal radiation due to thermal emission at temperatures of several hundred ° C. The solar-thermal conversion member can therefore efficiently absorb sunlight and provide heat and can prevent thermal radiation due to thermal emission.

Abstract: A dielectric layer for an electrostatic chuck is formed of a ceramic material having a first phase including aluminum oxide and a second phase including composite carbonitride (Ti, Me)(C, N) that contains titanium as fine grains. The Me represents a transition element and metals of Group 4 to Group 6 such as Mo and W. The ceramic material that includes the second phase by 0.05 vol % to 2.5 vol % has a volume resistivity value of about 108 to 1013 (?·cm) necessary for a Johnsen-Rahbek type electrostatic chuck.

Abstract: A stack structure for a solid oxide fuel cell includes a plurality of stacked single cells, each having a fuel electrode layer including a fuel electrode and an air electrode layer including an air electrode, the fuel electrode layer and the air electrode layer being arranged opposite each other on either side of a solid electrolyte, separators arranged between the stacked single cells to separate the single cells, and non-porous seal parts located within the fuel electrode layer and the air electrode layer, are equivalent to either the separators or the solid electrolyte at least in terms of thermal expansion and contraction characteristics, and are integrated with an edge of the fuel electrode or an edge of the air electrode, and also with the adjacent separator and the adjacent solid electrolyte.

Abstract: The present invention provides a method of producing a silicon carbide semiconductor substrate in which a silicon carbide buffer layer doped with germanium and a semiconductor device layer are sequentially laminated on the buffer layer, a silicon carbide semiconductor substrate obtained by the method and a silicon carbide semiconductor in which electrodes are disposed on the silicon carbide semiconductor substrate.

Abstract: A channel layer (40) for forming a portion of a carrier path between a source electrode (100) and a drain electrode (110) is formed on a drift layer (30). The channel layer (40) includes Ge granular crystals formed on the drift layer (30), and a cap layer covering the Ge granular crystals.

Abstract: Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm.

Abstract: A stack structure for a solid oxide fuel cell includes a plurality of stacked single cells, each having a fuel electrode layer including a fuel electrode and an air electrode layer including an air electrode, the fuel electrode layer and the air electrode layer being arranged opposite each other on either side of a solid electrolyte, separators arranged between the stacked single cells to separate the single cells, and non-porous seal parts located within the fuel electrode layer and the air electrode layer, are equivalent to either the separators or the solid electrolyte at least in terms of thermal expansion and contraction characteristics, and are integrated with an edge of the fuel electrode or an edge of the air electrode, and also with the adjacent separator and the adjacent solid electrolyte.

Abstract: An electric power generation cell 1 is constituted by arranging a fuel electrode layer 4 on one side of a solid electrolyte layer 3 and an air electrode layer 2 on the other side of the solid electrolyte layer 3. The solid electrolyte layer 3 is constituted of an oxide ion conductor mainly composed of a lanthanum gallate based oxide. The fuel electrode layer 4 is constituted of a porous sintered compact having a highly dispersed network structure in which a skeletal structure formed of a consecutive array of metal grains is surrounded by mixed conductive oxide grains. For the air electrode layer 2, a porous sintered compact mainly composed of cobaltite is used. This configuration reduces the overpotentials of the respective electrodes and the IR loss of the solid electrolyte layer 3, and accordingly can actualize a solid oxide type fuel cell excellent in electric power generation efficiency.

Abstract: An upper die has a cavity member constituting an inner bottom surface of a cavity, and a surrounding member. The cavity member is formed of a low adhesion material in accordance with the present invention, and includes a body portion and a surface layer formed on an undersurface of the body portion exposed to a fluid resin. The body portion is formed of a first material of 3YSZ and a second material of ZrN that are mixed at a predetermined ratio. The surface layer is formed of Y2O3 having a low adhesion property with respect to a set resin, and has a thermal expansion coefficient smaller than that of the body portion. By bonding the body portion and the surface layer at a high temperature and then cooling them down, compressive residual stress is caused in the surface layer due to a difference in the thermal expansion coefficients thereof, and the compressive residual stress is present in the surface layer.

Abstract: A low-adhesion material containing a rare-earth element is formed as a layer or a film on a mold surface of a mold for molding a resin. A main component of the low-adhesion material is a rare-earth compound, and Y2O3 is used as an example. A content of the rare-earth compound in the low-adhesion material is not less than 40 percent by volume. Thereby, a mold for molding a resin having excellent releasability can be obtained.

Abstract: A thermal barrier coating system comprising a metal substrate, a metal bonding layer and a ceramics thermal barrier layer wherein the ceramics thermal barrier layer has a columnar structure of a stabilized zirconia containing a stabilizer or a stabilized ZrO2—HfO2 solid solution containing a stabilizer, and comprises 0.1 to 10 mol % of lanthanum oxide.

Abstract: A semiconductor material having a stepwise surface structure of (0001)-plane terraces and (11-2n)-plane steps [n?0] on the SiC substrate, a semiconductor device using the same and a method of producing the semiconductor material in which a carbon-rich surface is formed on the SiC substrate prior to epitaxial growth of an SiC crystal, the carbon-rich surface satisfies the ratio R=(I284.5/I282.8)>0.2, wherein I282.8 (ISiC) is an integrated intensity of a C1s signal having a peak at the binding energy relating to stoichiometric SiC (in the region of 282.8 eV), and I284.5 (IC) is an integrated intensity of a C1s signal having a peak at the binding energy relating to graphite, SiCx (x>1), or SiyCH1-y (y<1) (in the region of 284.5 eV), as measured by an X-ray photoelectron spectroscopic analyzer (XPS).

Abstract: A mold surface of an upper mold with which a fluid resin comes into contact has an oxide therein. The oxide contains a metal cation and an ion. Field strength is calculated based on a valence of the metal cation and ionic radius of the ion. Based on predetermined relationship established between a value of the field strength and adhesion strength between a cured resin and the mold surface, releasability between the cured resin and the mold surface is evaluated. Thereby, a method of evaluating releasability between the cured resin and the mold surface is established. With this evaluation method, a material with high releasability can readily be provided. Further, if the material with high releasability is used for the mold surface of the upper mold, a mold for molding a resin having excellent releasability can be obtained.

Abstract: The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.

Abstract: An upper die (1) has a cavity member (6) constituting an inner bottom surface (5) of a cavity (4), and a surrounding member (7). The cavity member (6) is formed of a low adhesion material in accordance with the present invention, and includes a body portion (8) and a surface layer (10) formed on an undersurface (9) of the body portion (8) exposed to a fluid resin. The body portion (8) is formed of a first material of 3YSZ and a second material of ZrN that are mixed at a predetermined ratio. The surface layer (10) is formed of Y2O3 having a low adhesion property with respect to a set resin, and has a thermal expansion coefficient smaller than that of the body portion (8). By bonding the body portion (8) and the surface layer (10) at a high temperature and then cooling them down, compressive residual stress is caused in the surface layer (10) due to a difference in the thermal expansion coefficients thereof, and the compressive residual stress is present in the surface layer (10).

Abstract: A composite material used for a resin mold for forming hardened resin by hardening fluid resin is provided. The composite material comprises a first material having excellent wear resistance against the fluid resin and a second material having excellent unwettability against the fluid resin. The resin mold comprises a substrate of the first material, a large number of pores each provided to form an opening on a surface of the substrate opposite to the fluid resin and a film of the second material formed along the inner wall surface of each pore at least around the opening. Each of the large number of pores is a communicating hole connecting the surface opposite to the fluid resin and the remaining surface with each other. Therefore, releasability between a mold surface and the hardened resin and wear resistance of the composite material against the fluid resin can be improved.