Abstract: A thermal barrier coating system comprising a metal substrate, a metal bonding layer and a ceramics thermal barrier layer wherein the ceramics thermal barrier layer has a columnar structure of a stabilized zirconia containing a stabilizer or a stabilized ZrO2—HfO2 solid solution containing a stabilizer, and comprises 0.1 to 10 mol % of lanthanum oxide.

Abstract: A resin mold material includes one-dimensional communicating holes extending substantially linearly from a mold surface and having diameters from 1 nm to less than 10 ?m; a surface layer including the mold surface and the one-dimensional communicating holes; a support layer covering a back of the surface layer; and three-dimensional communicating holes communicating with the one-dimensional communicating holes in the support layer and having diameters larger than those of the one-dimensional communicating holes. Accordingly, a liquid resin is unlikely to enter the one-dimensional communicating holes, thereby reducing a contact area of the mold surface and the liquid resin, i.e., the mold surface is repellant to the liquid resin. Gas in a mold cavity bounded by the mold surface is discharged through the one-dimensional and three-dimensional communicating holes sequentially. Consequently, a release property of a molded product from the mold surface is improved and generation of voids is suppressed.

Abstract: A diamond electron emission element is provided with a substrate, and a plurality of quadrangular columns (microscopic projections) composed of diamond and with side faces of flat faces, which are arranged at equal intervals on the substrate. A top end face (horizontal section) is of a quadrangular shape having a length of long sides being a [nm] and a length of short sides being ka [nm], and a thin film of SiO2 is formed on a side face on the short-edge side. The length a [nm] of long sides and the length ka [nm] of short sides satisfy relational expressions of Formulae (1) and (2) below. C1=2a?{square root over (1+k2)}??(1) n?=C1??(2) C1: a distance [nm] of a lap in a situation where light generated inside each quadrangular column goes around on a specific circuit while being reflected on the side faces of the quadrangular column, n: an arbitrary positive integer, and ?: an emission peak wavelength ? [nm] of the diamond making the quadrangular columns.

Abstract: An electron emission element of the present invention comprises a substrate, and a protrusion protruding from the substrate and including boron-doped diamond. The protrusion comprises a columnar body. And a tip portion of the protrusion comprises an acicular body sticking out therefrom. The distance r [cm] between a center axis and a side face in the columnar body and the boron concentration Nb [cm?3] in the diamond satisfy the relationship represented by the following formula (1): r > 10 4 Nb .

Abstract: A soft hexagonal ferrite sintered material includes crystal particles of M-type hexagonal ferrite corresponding to a general chemical formula MFe12O19 wherein M is at least one element selected from the group consisting of Ba, Sr and Pb. Crystal particles having particle diameters of 5 ?m to 100 ?m are extracted from a sintered material produced from a precursor powder mixture. The extracted particles as seed crystals are mixed with a calcined powder comprising fine crystals having the above composition and particle diameters of 0.5 ?m to 3 ?m, then is sintered until the intended particle growth of the crystal particles in the sintered material is achieved to give an average particle diameter of 30 ?m to 500 ?m.

Abstract: A method of manufacturing an electron-emitting element (20) for emitting electrons from diamond includes the first step of forming a diamond columnar member (25) on a diamond substrate (21), and the second step of forming an electron-emitting portion (30) having a base portion (36) and a sharp-pointed portion (32) which is located closer to a distal end side than the base portion (36) and emits the electrons by performing etching processing with respect to the columnar member (25).

Abstract: An electron emission element according to the present invention comprises a substrate, and a plurality of protrusions composed of diamond and protruding from the substrate. Each protrusion includes a columnar portion, the side face of which forms an inclination of approximately 90° relative to the surface of the substrate, and a tip portion, which is located on the columnar portion having a spicular end. A conductive layer is formed on the upper part of each columnar portion, and a cathode electrode film, which is electrically connected to the conductive layer, is formed on the side face of the columnar portion.

Abstract: An electromagnetic type molten metal supply device having superior accuracy in supplying molten metal. This device is comprised of a rotary vane that rotates in accordance with the movement of molten metal inside a molten metal transport conduit, and the amount of molten metal being transported can be measured by detecting the rotational frequency of the rotary vane.

Abstract: The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.

Abstract: A resin mold material includes a number of one-dimensional communicating holes extending substantially linearly from a mold surface toward inside and having diameter from 1 nm order to 100 nm order; a surface layer including the mold surface and the one-dimensional communicating holes; a support layer covering a back of the surface, layer; and a number of three-dimensional communicating holes provided to communicate to the one-dimensional communicating holes in the support layer and having 1 &mgr;m order diameter. Accordingly, a liquid resin is unlikely to enter the one-dimensional communicating holes, thereby reducing contact area of the mold surface and the liquid resin, i.e., the mold surface being repellant to the liquid resin. Gas in a cavity is discharged through the one-dimensional and three-dimensional communicating holes sequentially. Consequently, release property of a molded product from the mold surface is improved and generation of voids is suppressed.

Abstract: An electron emission element of the present invention comprises a substrate, and a protrusion protruding from the substrate and including boron-doped diamond. The protrusion comprises a columnar body. And a tip portion of the protrusion comprises an acicular body sticking out therefrom. The distance r [cm] between a center axis and a side face in the columnar body and the boron concentration Nb [cm−3] in the diamond satisfy the relationship represented by the following formula (1): 1 r > 10 4 Nb .

Abstract: A diamond electron emission element is provided with a substrate, and a plurality of quadrangular columns (microscopic projections) composed of diamond and with side faces of flat faces, which are arranged at equal intervals on the substrate. A top end face (horizontal section) is of a quadrangular shape having a length of long sides being a [nm] and a length of short sides being ka [nm], and a thin film of SiO2 is formed on a side face on the short-edge side. The length a [nm] of long sides and the length ka [nm] of short sides satisfy relational expressions of Formulae (1) and (2) below.

Abstract: An electron emission element according to the present invention comprises a substrate, and a plurality of protrusions composed of diamond and protruding from the substrate. Each protrusion includes a columnar portion, the side face of which forms an inclination of approximately 90° relative to the surface of the substrate, and a tip portion, which is located on the columnar portion having a spicular end. A conductive layer is formed on the upper part of each columnar portion, and a cathode electrode film, which is electrically connected to the conductive layer, is formed on the side face of the columnar portion.

Abstract: The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.

Abstract: A platen for electrostatic wafer clamping apparatus comprising a platen body of dielectric material and grains of electrically conductive material diffused in the dielectric material so that the platen has a relatively large electrostatic capacitance due to the diffusion of the conductive grains with the result that the platen provides an increased clamping force regardless of humidity. In accordance with another aspect of the invention, the thickness of the platen body can be decreased by an amount sufficient to maintain a constant clamping force with reduced applied voltage, to eliminate any residual voltage on the platen and to increase the speed of wafer release. The grains of electrically conductive material are present in an amount of from about 2.5 percent to about 15.0 percent of the volume of the platen body, and the grains of electrically conductive material are selected from the group consisting of carbonated transition metals, nitrified transition metals and carbonated grains.

Abstract: An electrical connection board includes a diamond substrate and an implantation metal layer constituted by the presence of metal elements in the diamond substrate. The metal layer has a thickness of at least 10 nm and a concentration of at least 1020 cm−3 in the diamond substrate. The implantation metal layer is formed by ion implanting metal elements with a high energy level of at least 1 MeV and a high dose of at least 1016 cm−2. Thus, a technique is provided by which a multi-layer electrical interconnection is realized in the diamond substrate having the highest thermal conductivity of all known materials.

Abstract: The present invention relates to a novel method of manufacturing carbon nanotubes and a method of manufacturing a nanotube film that is composed of a multitude of carbon nanotubes so oriented as to extend along a thickness direction of the film. The present invention further relates to a structure equipped with a carbon nanotube film formed on a surface of a base plate portion. In the method of the present invention, SiC is heated under vacuum to remove silicon atoms from the SiC, whereby the carbon nanotubes are formed at a portion of the SiC where the silicon atoms have been removed. This method makes it possible to manufacture carbon nanotubes with high yields as well as high purity. The carbon nanotubes formed according to this method tend to be oriented perpendicularly to the surface of the SiC crystal. Thus, it is possible to obtain a nanotube film composed of the aforementioned carbon nanotubes with a high degree of orientation.

Abstract: An object of the present invention is to provide composite ceramic powder containing composite ceramic particulates as constituent particulates. Each of the composite ceramic particulates is constituted of a group of first particles and a group of second particles in which the first particles are localized around the second particles. A spray pyrolysis is used to localize the first particles around the second particles, thereby producing such composite ceramic particulates.

Abstract: To provide a high-temperature stable transition-type alumina that does not undergo transformation into .alpha.-alumina even at high-temperature exceeding 1300.degree. C., and a method for producing the transition-type alumina.A metal aluminum block is placed on a block of .alpha.-alumina composed of Al.sub.2 O.sub.3. Portions of the .alpha.-alumina block and the metal aluminum block close to their boundary was strongly heated by contacting the flame of burning gas with the portions. Alumina and a relatively small amount of magnesium are thereby vaporized, and allowed to react with oxygen in the atmosphere, thereby obtaining a transition-type alumina that contains a small amount of magnesium in the crystal structure. The transition-type alumina obtained by this method is substantially of single crystal type, and does not undergo transformation into .alpha.-alumina even at high temperatures exceeding 1300.degree. C.

Abstract: A ceramics composite material containing crystallized glass as the matrix and fibers or whiskers of ceramics as a reinforcement material, is obtained by melting original glass to form crystallized glass, compounding the same with fibers or whiskers of oxide ceramics and thereafter crystallizing the original glass. This ceramics composite material does not form any voids and can easily contain at least 50 volume percent of the reinforcement material, whereby a good mechanical strength and fracture toughness are achieved. In the compounding step, the content of the reinforcement can be further increased by forcing out any excess part of the original glass from the reinforcement material by applying pressure to a substance obtained by mixing the original glass with the reinforcement. Further, the ceramics composite material can be efficiently formed into a desired configuration by heating because the original glass flows viscously.